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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.
Two new heteroleptic chelated-benzoato gallium (III) and indium (III) complexes have been prepared and structurally characterized. The molecular structures of [GaCl2(4-Mepy)2(O2CPh)]4-Mepy (1) and [InCl(4-Mepy)2(O2CPh)2]4-Mepy (2) have been determined by single-crystal x-ray diffraction. The gallium compound (1) is a distorted octahedron with cis-chloride ligands co-planar with the chelating benzoate and the 4-methylpyridines trans to each other. This is the first example of a Ga(III) structure with a chelating benzoate. The indium compound (2) is a distorted pentagonal bipyramid with two chelating benzoates, one 4-methylpyridine in the plane and a chloride trans to the other 4-methylpyridine. The indium bis-benzoate is an unusual example of a seven-coordinate structure with classical ligands. Both complexes, which due to the chelates, could also be described as pseudo-trigonal bipyramidal, include a three-bladed motif with three roughly parallel aromatic rings that along with a solvent of crystallization and electron-withdrawing chloride ligand(s) stabilize the solid-state structures.
The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.
Friction and wear of materials coated with gallium-rich films
Shelf lifetime of some gallium arsenide solar cells
Proton damage to silicon and gallium arsenide solar cells
Friction and wear of low melting gallium alloys on stainless steel and nickel in argon and vacuum environment
Single crystal gallium phosphide solar cells
Gallium arsenide solar cells with extremely shallow diffused junction depth
Gallium abundance measured in carbonaceous, enstatite and chondrite meteorites, using neutron activation technique
Metallurgical, electrical, and optical properties of gallium phosphide
Increased purity, improved electrical properties, lower net carrier concentration, and higher mobilization obtained for single crystal gallium phosphide solar cell by using chloride transport
Solar cells from epitaxial deposition of gallium arsenide on germanium
Silicon and gallium arsenide solar cell arrays as power source for Pioneer missions
Vanadium-gallium system in region of V-3Ga studied by X-ray diffraction and metallography techniques
Metallurgical, electrical, and optical properties of gallium phosphide
Metallurgical, electrical, and optical properties of gallium phosphide systems
Chemical, electrical, and optical properties of cobalt as gallium phosphide impurity