Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “emittance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Design and testing a high fuel volume fraction, externally finned, thermionic emitter.

A prototypical, high fuel volume fraction, thermionic emitter body was designed and tested. The emitter body is all tungsten, with a 1.40-cm ID, a 3.23-cm OD, and eight full-length axial fins. The emitter thickness is 0.15 cm while the fins and outer clad are 0.075 cm thick. Different methods of fabrication were used in making the test samples. Stress analysis was performed with a three-dimensional elastic code. Thermal testing of the samples, duplicating calculated radial temperature gradients, heatup and cooldown rates, and emitter body temperatures in operation, was performed with no structural failures noted (six heatup and cooldown cycles per sample). Further emitter analysis and testing is planned.

Peelgren, M. L.↗

Spectral and Total Normal Emittance of Reusable Surface Insulation Materials

Measurements of spectral and total normal emittance have been made on three types of reusable external insulation materials proposed for space shuttles. Emittances were measured in the spectral range 1 to 15 micrometer at temperatures of 800 K and 1100 K using a radiometric measurement technique. Results indicated that the total normal emittance of these materials was less than 0.8 between 800 K and 1300 K. The total normal emittance decreased with increasing temperature. The three ceramic coating candidate materials exhibited a similar spectral emittance distribution.

Kantsios, A. G.↗

Performance of a thermionic converter module utilizing emitter and collector heat pipes

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

Kroeger, E. W.↗

Effects of atmosphere, temperature and emittance on reflected and emitted energy

The effects of temperature and emittance on the relative magnitude of reflected energy and emitter energy from a target including atmospheric effects was studied. From the calculations of energy reflected and emitted from a target including atmospheric effects using LOWTRAN 3 programs for midlatitude summer model, the following conclusions were obtained: (1) At 3.5 micrometers q is considerably less than 1 except at high temperatures and for high emittance; (2) at 4 micrometers q is of the order of magnitude equal to 1 for most targets; and (3) at 4.6 micrometers, q is considerably greater than 1 at high temperatures and high emittance. In addition, incident atmospheric emission reflected from the target was found to be negligible except for targets having low temperature and low emittance.

Kumar, R.↗

Transit time and charge storage measurements in heavily doped emitters

A first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer is reported. The value was obtained by a high-frequency conductance method recently developed and used for low-doped Si. The transit time coupled with the steady-state current enables the determination of the quasi-static charge stored in the emitter and the quasi-static emitter capacitance. Using a transport model, from the measured transit time, the value for the minority-carrier diffusion coefficient and mobility is estimated. The measurements were done using a heavily doped emitter of the Si p(+)-n-p bipolar transistor. The new result indicates that the position-averaged minority-carrier diffusion coefficients may be much smaller than the corresponding majority-carrier values for emitters having a concentration ranging from about 3 x 10 to the 19th per cu cm to 10 to the 20th per cu cm.

Neugroschel, A.↗

Floating emitter solar cell

A front surface contact floating emitter solar cell transistor is provided in a semiconductor body (n-type), in which floating emitter sections (p-type) are diffused or implanted in the front surface. Between the emitter sections, a further section is diffused or implanted in the front surface, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n+, or as a collector for the adjacent emitter sections.

Chih, Sah↗

Enhanced thermal emittance of space radiators by ion-discharge chamber texturing

The discharge chamber of a 30-cm argon ion source was successfully used to texture potential space radiator materials for the purpose of obtaining values of thermal emittance greater than 0.85 at 700 and 900 K. Some samples were also treated in acid prior to texturing. To evaluate the durability of the textured materials to atomic oxygen, samples were exposed to an RF air plasma environment. The spectral emittance between 2.0 anf 15.0 microns was measured before and after the textured materials were exposed to the plasma asher. The results indicate that copper with extremely high values of emittance after texturing (0.978 and 0.983) at 700 and 900 K, respectively,did not change its values of emittance after ashing, whereas the emittance of stainless steel fell below 0.85 after ashing. These data, along with scanning electron photomicrographs, and the results of texturing and ashing titanium and Nb(1)Zr are presented .

Mirtich, Michael J.↗

Arc-textured metal surfaces for high thermal emittance space radiators

Carbon arc electrical discharges struck across the surfaces of metals such as Nb-1 percent Zr, alter the morphology to produce a high thermal emittance surface. Metal from the surface and carbon from the arc electrode vaporize during arcing, and then condense on the metal surface to produce a microscopically rough surface having a high thermal emittance. Quantitative spectral reflectance measurements from 0.33 to 15 microns were made on metal surfaces which were carbon arc treated in an inert gas environment. The resulting spectral reflectance data were then used to calculate thermal emittance as a function of temperature for various methods of arc treatment. The results of arc treatment on various metals are presented for both ac and dc arcs. Surface characterization data, including thermal emittance as a function of temperature, scanning electron microscopy, and atomic oxygen durability, are also presented. The ac arc texturing was found to increase the thermal emittance at 800 K from 0.05 to 0.70.

Banks, Bruce A.↗

Selective Emitters

This invention relates to a small particle selective emitter for converting thermal energy into narrow band radiation with high efficiency. The small particle selective emitter is used in combination with a photovoltaic array to provide a thermal to electrical energy conversion device. An energy conversion apparatus of this type is called a thermo-photovoltaic device. In the first embodiment, small diameter particles of a rare earth oxide are suspended in an inert gas enclosed between concentric cylinders. The rare earth oxides are used because they have the desired property of large emittance in a narrow wavelength band and small emittance outside the band. However, it should be emphasized that it is the smallness of the particles that enhances the radiation property. The small particle selective emitter is surrounded by a photovoltaic array. In an alternate embodiment, the small particle gas mixture is circulated through a thermal energy source. This thermal energy source can be a nuclear reactor, solar receiver, or combustor of a fossil fuel.

Chubb, Donald L.↗

Field-emitter arrays for vacuum microelectronics

An ongoing program on microfabricated field-emitter arrays has produced a gated field-emitter tip structure with submicrometer dimensions and techniques for fabricating emitter arrays with tip packaging densities of up to 1.5 x 10 exp 7 tips/sq cm. Arrays have been fabricated over areas varying from a few micrometers up to 13 cm in diameter. Very small overall emitter size, materials selection, and rigorous emitter-tip processing procedures have contributed to reducing the potential required for field emission to tens of volts. Emission current densities of up to 100 A/sq cm have been achieved with small arrays of tips, and 100-mA total emission is commonly produced with arrays 1 mm in diameter containing 10,000 tips. Transconductances of 5.0 micro-S per tip have been demonstrated, indicating that 50 S/sq cm should be achievable with tip densities of 10 exp 7 tips/sq cm. Details of the cathode arrays and a variety of performance characteristics are discussed.

Spindt, C. A.↗

Radiative Performance of Rare Earth Garnet Thin Film Selective Emitters

In this paper we present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I(sub 15/2)-(4)I(sub 13/2) at 1.5 microns, and Ho, (5)I(sub 7)-(5)I(sub 8) at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.

Lowe, Roland A.↗

Effects of Ambient High Temperature Exposure on Alumina-Titania High Emittance Surfaces for Solar Dynamic Systems

Solar dynamic (SD) space power systems require durable, high emittance surfaces on a number of critical components, such as heat receiver interior surfaces and parasitic load radiator (PLR) elements. To enhance surface characteristics, an alumina-titania coating has been applied to 500 heat receiver thermal energy containment canisters and the PLR of NASA Lewis Research Center's (LeRC) 2 kW SD ground test demonstrator (GTD). The alumina-titania coating was chosen because it had been found to maintain its high emittance under vacuum (less than or equal to 10(exp -6) torr) at high temperatures (1457 F (827 C)) for an extended period (approximately 2,700 hours). However, preflight verification of SD systems components, such as the PLR require operation at ambient pressure and high temperatures. Therefore, the purpose of this research was to evaluate the durability of the alumina-titania coating at high temperature in air. Fifteen of sixteen alumina-titania coated Incoloy samples were exposed to high temperatures (600 F (316 C) to l500 F (816 C)) for various durations (2 to 32 hours). Samples, were characterized prior to and after heat treatment for reflectance, solar absorptance, room temperature emittance and emittance at 1,200 F (649 C). Samples were also examined to detect physical defects and to determine surface chemistry using optical microscopy, scanning electron microscopy operated with an energy dispersive spectroscopy (EDS) system, and x ray photoelectron spectroscopy (XPS). Visual examination of the heat-treated samples showed a whitening of samples exposed to temperatures of 1,000 F (538 C) and above. Correspondingly, the optical properties of these samples had degraded. A sample exposed to 1,500 F (816 C) for 24 hours had whitened and the thermal emittance at 1,200 F (649 C) had decreased from the non-heat treated value of 0.94 to 0.62. The coating on this sample had become embrittled with spalling off the substrate noticeable at several locations. Based on this research it is recommended that preflight testing of SD components with alumina-titania coatings be restricted to temperatures no greater than 600 F (316 C) in air to avoid optical degradation. Moreover, components with the alumina-titania coating are likely to experience optical property degradation with direct atomic oxygen exposure in space.

deGroh, Kim K.↗

Rare-Earth Oxide (Yb2O3) Selective Emitter Fabrication and Evaluation

This investigation involved the fabrication and evaluation of rare-earth oxide selective emitters. The first goal of this study was to successfully fabricate the selective emitter samples using paper and ceramic materials processing techniques. The resulting microstructure was also analyzed using a Scanning Electron Microscope. All selective emitter samples fabricated for this study were made with ytterbium oxide (Yb2O3). The second goal of this study involved the measurement of the spectral emission and the radiated power of all the selective emitter samples. The final goal of this study involved the direct comparison of the radiated power emitted by the selective emitter samples to that of a standard blackbody at the same temperature and within the same wavelength range.

Jennette, Bryan↗

Directional emittance surface measurement system and process

Apparatus and process for measuring the variation of directional emittance of surfaces at various temperatures using a radiometric infrared imaging system. A surface test sample is coated onto a copper target plate provided with selective heating within the desired incremental temperature range to be tested and positioned onto a precision rotator to present selected inclination angles of the sample relative to the fixed positioned and optically aligned infrared imager. A thermal insulator holder maintains the target plate on the precision rotator. A screen display of the temperature obtained by the infrared imager, and inclination readings are provided with computer calculations of directional emittance being performed automatically according to equations provided to convert selected incremental target temperatures and inclination angles to relative target directional emittance values. The directional emittance of flat black lacquer and an epoxy resin measurements obtained are in agreement with the predictions of the electromagnetic theory and with directional emittance data inferred from directional reflectance measurements made on a spectrophotometer.

Puram, Chith K.↗

Group-III Nitride Field Emitters

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Bensaoula, Abdelhak↗

Compact Rare Earth Emitter Hollow Cathode

A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this configuration with possibly an even longer emitter life. This cathode is specifically designed to integrate on the centerline of a high-power Hall thruster, thus eliminating the asymmetries in the plasma discharge common to cathodes previously mounted externally to the thruster s magnetic circuit. An alternative configuration for the cathode uses an external propellant feed. This diverts a fraction of the total cathode flow to an external feed, which can improve the cathode coupling efficiency at lower total mass flow rates. This can improve the overall thruster efficiency, thereby decreasing the required propellant loads for different missions. Depending on the particular mission, reductions in propellant loads can lead to mission enabling capabilities by allowing launch vehicle step-down, greater payload capability, or by extending the life of a spacecraft.

Watkins, Ronald↗

Fabrication of a Cryogenic Terahertz Emitter for Bolometer Focal Plane Calibrations

A fabrication process is reported for prototype emitters of THz radiation, which operate cryogenically, and should provide a fast, stable blackbody source suitable for characterization of THz devices. The fabrication has been demonstrated and, at the time of this reporting, testing was underway. The emitter is similar to a monolithic silicon bolometer in design, using both a low-noise thermometer and a heater element on a thermally isolated stage. An impedance-matched, high-emissivity coat ing is also integrated to tune the blackbody properties. This emitter is designed to emit a precise amount of power as a blackbody spectrum centered on terahertz frequencies. The emission is a function of the blackbody temperature. An integrated resistive heater and thermometer system can control the temperature of the blackbody with greater precision than previous incarnations of calibration sources that relied on blackbody emission. The emitter is fabricated using a silicon- on-insulator substrate wafer. The buried oxide is chosen to be less than 1 micron thick, and the silicon device thickness is 1-2 microns. Layers of phosphorus compensated with boron are implanted into and diffused throughout the full thickness of the silicon device layer to create the thermometer and heater components. Degenerately doped wiring is implanted to connect the devices to wire-bondable contact pads at the edge of the emitter chip. Then the device is micromachined to remove the thick-handle silicon behind the thermometer and heater components, and to thermally isolate it on a silicon membrane. An impedance- matched emissive coating (ion assisted evaporated Bi) is applied to the back of the membrane to enable high-efficiency emission of the blackbody spectrum.

Chervenak, James↗

Compliance with High-Intensity Radiated Fields Regulations - Emitter's Perspective

NASA's Deep Space Network (DSN) uses high-power transmitters on its large antennas to communicate with spacecraft of NASA and its partner agencies. The prime reflectors of the DSN antennas are parabolic, at 34m and 70m in diameter. The DSN transmitters radiate Continuous Wave (CW) signals at 20 kW - 500 kW at X-band and S-band frequencies. The combination of antenna reflector size and high frequency results in a very narrow beam with extensive oscillating near-field pattern. Another unique feature of the DSN antennas is that they (and the radiated beam) move mostly at very slow sidereal rate, essentially identical in magnitude and at the opposite direction of Earth rotation.The DSN is in the process of revamping its documentation to provide analysis of the High Intensity Radiation Fields (HIRF) environment resulting from radio frequency radiation from DSN antennas for comparison to FAA regulations regarding certification of HIRF protection as outlined in the FAA regulations on HIRF protection for aircraft electrical and electronic systems (Title 14, Code of Federal Regulations (14 CFR) [section sign][section sign] 23.1308, 25.1317, 27.1317, and 29.1317).This paper presents work done at JPL, in consultation with the FAA. The work includes analysis of the radiated field structure created by the unique DSN emitters (combination of transmitters and antennas) and comparing it to the fields defined in the environments in the FAA regulations. The paper identifies areas that required special attention, including the implications of the very narrow beam of the DSN emitters and the sidereal rate motion. The paper derives the maximum emitter power allowed without mitigation and the mitigation zones, where required.Finally, the paper presents summary of the results of the analyses of the DSN emitters and the resulting DSN process documentation.

DSN emitters↗