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At least 55 records · Page 3

Low energy secondary electron induced damage of condensed nucleotides

Radiation damage and stimulated desorption of nucleotides 2'-deoxyadenosine 5'-monophosphate (dAMP), adenosine 5'-monophosphate (rAMP), 2'-deoxycytidine 5'-monophosphate (dCMP), and cytidine 5'-monophosphate (rCMP) deposited on Au have been measured using x-rays as both the probe and source of low energy secondary electrons. The fluence dependent behavior of the O-1s, C-1s, and N-1s photoelectron transitions was analyzed to obtain phosphate, sugar, and nucleobase damage cross sections. Although x-ray induced reactions in nucleotides involve both direct ionization and excitation, the observed bonding changes were likely dominated by the inelastic energy-loss channels associated with secondary electron capture and transient negative ion decay. Growth of the integrated peak area for the O-1s component at 531.3 eV, corresponding to cleavage of the C—O—P phosphodiester bond, yielded effective damage cross sections of about 23 Mb and 32 Mb (1 Mb = 10 –18 cm 2 ) for AMP and CMP molecules, respectively. The cross sections for sugar damage, as determined from the decay of the C-1s component at 286.4 eV and the glycosidic carbon at 289.0 eV, were slightly lower (about 20 Mb) and statistically similar for the r- and d- forms of the nucleotides. Here, the C-1s component at 287.6 eV, corresponding to carbons in the nucleobase ring, showed a small initial increase and then decayed slowly, yielding a low damage cross section (~5 Mb). Although there is no statistical difference between the sugar forms, changing the nucleobase from adenine to cytidine has a slight effect on the damage cross section, possibly due to differing electron capture and transfer probabilities.

74 ATOMIC AND MOLECULAR PHYSICS↗

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗

Heterogeneous clusters as a model system for the study of ionization dynamics within tampered samples

Tampering of a sample with a layer of another material is a promising technique to slow down the expansion dynamics within laser irradiated samples, with sound implications for single-particle diffraction imaging. Ideally, if an imaged object is covered by a layer of another material, during the irradiation this layer will be primarily ionized and will expand fast due to Coulomb repulsion, whereas the object located within the net neutral core will expand more slowly (hydrodynamically). We investigate the details of the electronic damage within the tampered samples during their irradiation with an intense extreme ultraviolet (EUV) pulse. We study heterogeneous clusters composed of noble gas atoms, Xe and Ar, for which chemical-bond effects can be neglected. Using a fully nonequilibrium kinetic equation code, we demonstrate the influence of cluster composition on ionization dynamics; in particular, on the electronic damage. The results are obtained for the wavelength of 32 nm, which is available at the free-electron laser in Hamburg (FLASH) facility, but our conclusions can also have implications for samples with a more complex structure and irradiated at a much shorter wavelength.

74 ATOMIC AND MOLECULAR PHYSICS↗

Electron Beam Damage in Apatite: Limitations for SKα Measurements of S6+/∑S

In magmatic systems, the availabil- ity of excess oxygen that can react with multivalent elements such as Fe and S to change their charge (oxi- dation of Fe2+ to Fe3+ or reduction of S6+ to S2-) is characterized by a parameter called the oxygen fugacity (ƒO2). The ƒO2 controls the availability of these ions and consequently the minerals—and the chemistry of those minerals—that crystallize from a melt. Mineral mode and chemistry control how magmas evolve, and given that ƒO2 varies by many orders of magnitude on different planets [2], understanding the ƒO2 of a mag- ma is critical to relating observations about a magma to the body on which it forms. The mineral apatite was long thought to only incor- porate S6+ in a coupled substitution for P5+, but recently natural apatites with S2- were identified in lunar mare basalts that crystallized at low ƒO2 [3]. This suggests that apatite can be used as a monitor of ƒO2 assuming that one can 1) measure S6+/∑S (S6+ over total sulfur), and 2) determine some partitioning relationship be- tween apatite and melt for S6+ and S2-. The most common method for measuring S6+/∑S is X-ray Absorption Near-Edge Spectroscopy (XANES), but given the limited access to synchrotron facilities, it is wise to explore the potential of other methods for measuring S6+/∑S. One such possible method relies upon the shift in energy of the sulfur K-α peak on the electron microprobe. However, apatite is subject to well-documented beam damage [4, 5], so it is neces- sary to evaluate under what conditions can reliable S6+ ethod.

de Chizelle, J. Kuhn↗

Absolute cross section for loss of supercoiled topology induced by 10 eV electrons in highly uniform /DNA/1,3-diaminopropane films deposited on highly ordered pyrolitic graphite

It was recently shown that the affinity of doubly charged, 1-3 diaminopropane (Dap{sup 2+}) for DNA permits the growth on highly ordered pyrolitic graphite (HOPG) substrates, of plasmid DNA films, of known uniform thickness [O. Boulanouar, A. Khatyr, G. Herlem, F. Palmino, L. Sanche, and M. Fromm, J. Phys. Chem. C 115, 21291–21298 (2011)]. Post-irradiation analysis by electrophoresis of such targets confirms that electron impact at 10 eV produces a maximum in the yield of single strand breaks that can be associated with the formation of a DNA{sup −} transient anion. Using a well-adapted deterministic survival model for the variation of electron damage with fluence and film thickness, we have determined an absolute cross section for strand-break damage by 10 eV electrons and inelastic scattering attenuation length in DNA-Dap complex films.

36 MATERIALS SCIENCE↗

Study of the neutron damage on electronics at the National Ignition Facility

The NIF environment is very complex leading to a large and non trivial radiation background. A shield surrounding the electronics is required to lower the neutron background to less than 1e7 n/cm{sup 2}. Moving electronics to behind the 6 foot-thick target bay wall is the best shield.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Characterization of electron-beam induced damage structures in natural fluorite, CaF2, by analytical electron microscopy

This paper describes the damage structure induced in natural CaF2 by the electron beam when using TEM. The observed 10-20 nm periodic features with coherent fringe patterns and the pronounced loss of fluorine found after the TEM exposure of 100-line-oriented and 111-oriented sections of CaF2 provides support for the mechanism of damage by decomposition of CaF2 into 2F and Ca, with the Ca precipitates maintaining a close topotaxial relationship with the parent CaF2.

Blake, D. F.↗

Potential for Fabric Damage by Welding Electron Beam

Welding electron beam effects on Nextel AF-62 ceramic fabric enable a preliminary, tentative interpretation of electron beam fabric damage. Static surface charging does not protect fabric from beam penetration, but penetration occurs only after a delay time. The delay time is thought to be that required for the buildup of outgassing products at the fabric surface to a point where arcing occurs. Extra long delays are noted when the gun is close enough to the surface to be shut off by outgassing emissions. Penetration at long distances is limited by beam attenuation from electronic collisions with the chamber atmosphere.

Fragomeni, James M.↗

Testing Protocol Proposal to Identify and Evaluate Candidate Materials to Substitute for Silverized Teflon in Thermal Control Applications

Electrostatic discharge (ESD) has been shown to be the primary cause of several glitches in spacecraft operations. It appears that charged particles encountered in the natural environment in certain orbits can collect on the outer surfaces of a spacecraft, building up a charge of several thousand volts. If the potential exceeds the breakdown voltage of the charged material, then an ESD will occur. ESD events involving relatively low voltages, on the order of 100 V, have been shown to damage electronic components. When ESD occurs, electronic and electrical components can be damaged, computer instructions can be garbled, and ablation of material from the spacecraft may occur; degrading both the performance of the thermal control blankets, and the cleanliness of any surfaces on which the detritus becomes deposited. There appear to be six ways to prevent or mitigate the effects of ESD: (1) Choose an orbit where charging is not a problem; (2) Carry extra electromagnetic shielding; (3) Provide redundancy in components and programming; (4) Provide for active dissipation of the charge, by generating a plasma with which to bathe susceptible surfaces; (5) Provide for passive dissipation from a plasma contactors on the susceptible surfaces; and (6) Provide thermal control blankets that do not hold a charge, i.e., that are conductive enough to bleed a charge off harmlessly. These six options are discussed in detail in Losure (1996). Of these six options, number 1 is not always practical, given other requirements of the mission; 2, 3, 4 and 5 will require that extra mass in the form of shielding, etc., be carried by the spacecraft. The most attractive option from a mass and energy point of view seems to be that of finding a material which matches the other performance characteristics of the current thermal control blankets without their tendency to build up an electrostatic charge. The goal of this paper is to describe and justify a testing program which will lead to the approval of materials of this kind.

Losure, Nancy S.↗

Designer's guide to radiation effects on materials for use on Jupiter fly-bys and orbiters

This paper summarizes the state-of-the-art of the complex field of radiation effects on spacecraft materials. It is intended as a guide for designers of systems exposed to damaging electrons and protons. The emphasis is on the relative damage levels for the more common materials that may be used. Information on the preliminary flux and fluence levels of the yet to be designed Jupiter orbiter, Galileo, is also presented.

Bouquet, F. L.↗

Electron and proton damage coefficients in low-resistivity silicon

The electron and proton damage coefficients for low resistivity p-type boron-doped silicon were determined from minority-carrier lifetime measurements on bulk material and diffusion length measurements on solar cells. The bulk samples were irradiated with electrons at three energy levels (0.5, 1.5, and 2.5 MeV) using a Dynamitron. Lifetime measurements were made with a steady-state photoconductivity apparatus, and comparison measurements of diffusion length were obtained using the steady-state surface photovoltage method (Goodman, 1961). The diffusion-length damage coefficients increased with decreasing resistivity for boron-doped silicon; this dependence can be qualitatively accounted for using a two-level Hall-Shockley-Read model. The damage coefficients for solar cells were larger than for their bulk-material counterparts. The damage coefficient was apparently independent of the dislocation density in the 0.1 ohm-cm bulk samples and solar cells investigated.

Srour, J. R.↗