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NASA NTRS1992

A 32-GHz phased array transmit feed for spacecraft telecommunications

A 21-element phased array transmit feed was demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 34 GHz for future deep-space missions. Antenna pattern measurements demonstrating electronic beam steering of the two-dimensional array are reported and compared with predictions based on measured performance of MMIC-based phase shifter and amplifier modules and Vivaldi slotline radiating elements.

Lee, K. A.↗

NASA NTRS2005

Growing Aligned Carbon Nanotubes for Interconnections in ICs

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

Li, Jun↗

DOE OSTI2024

Rapid Demonstration of Bremsstrahlung Diode Optimization

Optimization of the radiation pattern from a Bremsstrahlung target for a given application is possible by controlling the electron beam that impacts the high-atomic-number target. In this work, the electron beam is generated by a 13MV vacuum diode that terminates a coaxial magnetically insulted transmission line (MITL) on the HERMES-III machine at Sandia National Labs. Work by Sanford introduced a geometry for vacuum diodes that can control the flow within bounds. The "indented anode", as coined by Sanford, can straighten out the electron beam in a high-current diode that would otherwise be prone to beam pinching. A straighter beam will produce a more forwardly directed radiation pattern while a pinching electron beam will yield a focal point or hot spot on axis and a more diffuse radiation pattern. Either one of these may be desirable depending on the application. This work serves as a first attempt to optimize the radiation pattern in the former sense of collimating the radiation pattern given a limited parameter space. The optimization is attempted first using electromagnetic particle-in-cell simulations in the EMPIRE code suite. The setup of the models used in EMPIRE is discussed along with some basic theory behind some of the models used in the simulations such as anode heating and secondary ions. Theoretical work performed by Allen Garner and his students at Purdue is included here, which concerns the impact of collisions in these vacuum diodes. The EMPIRE simulations consider both an aggressive and a conservative design. The aggressive design is inherently riskier while the conservative design is chosen as something that, while still a risk, is more likely to perform as expected. The ultimate goal of this work was to validate the EMPIRE code results with experimental data. While the experiment that tested the diode designs proposed by the simulation results fell outside of the fiscal boundaries of this project (and for that reason the results of which are not included in this report), the hardware for the experiment was designed and drafted within those same fiscal boundaries, and is thus included in this report. However, there was yet another experiment performed in this project that tested a key feature of the diode: the hemispherical cathode. Those results are documented here as well, which show that the cathode tip is an important aspect to controlling the diode flow. A short series of simulations on this diode were also performed after the experiment in order to gain a better understanding of the effect of ions. on the flow pattern and faceplate dose profile.

43 PARTICLE ACCELERATORS↗

NASA NTRS1973

Data storage, image tube type

Method and apparatus for the storage of digital or analog electrical signals are provided by a memory storage system employing a conventional vidicon tube. At the beginning of an operating cycle, the vidicon is conditioned to accept electrical data input by exposing its photosensitive target to a short, high intensity light flash. A first electron beam scan of the photosensitive surface then sets up a charge pattern on the photosensitive target. A second electron beam scan of the photosensitive surface by an unmodulated electron beam then develops an output signal across an output resistor by using capacitive currents. The conditioning and scanning steps are operated repetitively at high speed using conventional television camera scan, sync, and power supply circuitry to provide a low cost data storage system.

Lipoma, P. C.↗

DOE OSTI2024

Selected Area Manipulation of MoS 2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing

Here we demonstrate direct-write patterning of single and multilayer MoS 2 via a focused electron beam-induced etching (FEBIE) process mediated with the XeF 2 precursor. MoS 2 etching is performed at various currents, areal doses, on different substrates, and characterized using scanning electron and atomic force microscopies as well as Raman and photoluminescence spectroscopies. Scanning transmission electron microscopy reveals a sub-40 nm etching resolution and the progression of point defects and lateral etching of the consequent unsaturated bonds. The results confirm that the electron beam-induced etching process is minimally invasive to the underlying material in comparison to ion beam techniques, which damage the subsurface material. Single-layer MoS 2 field-effect transistors are fabricated, and device characteristics are compared for channels that are edited via the selected area etching process. The source–drain current at constant gate and source–drain voltage scale linearly with the edited channel width. Moreover, the mobility of the narrowest channel width decreases, suggesting that backscattered and secondary electrons collaterally affect the periphery of the removed area. Focused electron beam doses on single-layer transistors below the etching threshold were also explored as a means to modify/thin the channel layer. The FEBIE exposures showed demonstrative effects via the transistor transfer characteristics, photoluminescence spectroscopy, and Raman spectroscopy. While strategies to minimize backscattered and secondary electron interactions outside of the scanned regions require further investigation, here, we show that FEBIE is a viable approach for selective nanoscale editing of MoS 2 devices.

36 MATERIALS SCIENCE↗

NASA NTRS2007

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as wide as 15 to 20 nm, but may be sufficient to control the growth of the quantum dots. In the low-contrast method, the resist would be etched in such a way as to form dimples, the shapes of which would mimic the electron-beam density profile. Then by use of a transfer etching process that etches the substrate faster than it etches the resist, either the pattern of holes or a pattern comprising the narrow, lowest portions of the dimples would be imparted to the substrate. Having been thus patterned, the substrate would be cleaned. The resulting holes or dimples in the substrate would serve as nucleation sites for the growth of quantum dots of controlled size in the following steps. The substrate would be cleaned, then placed in a molecular-beam-epitaxy (MBE) chamber, where native oxide would be thermally desorbed and the quantum dots would be grown.

Gunapala, Sarath↗

DOE OSTI2026

Unsupervised anomaly detection in MeV ultrafast electron diffraction

MeV ultrafast electron diffraction (MUED) is a pump-probe technique used to study the dynamic structural evolution of materials. An ultrashort laser pulse triggers structural changes, which are then probed by an ultrashort relativistic electron beam. To overcome low signal-to-noise ratios, diffraction patterns are averaged over thousands of shots. However, shot-to-shot instabilities in the electron beam can distort individual patterns, introducing uncertainty. Improving MUED accuracy requires detecting and removing these anomalous patterns from large datasets. In this work, we developed a fully unsupervised methodology for the detection of anomalous diffraction patterns. Using a convolutional autoencoder, we calculate the reconstruction mean squared error of the diffraction patterns. Based on the statistical analysis of this error, we provide the user an estimation of the probability that the pattern is normal, which also allows a posterior visual inspection of the images that are difficult to classify. This method has been trained with only 100 diffraction patterns and tested on 1521 patterns, resulting in a false positive rate between 0.2% and 0.4%, with a training time of 10 s per image and a test time of about 1 s per image. Here, the proposed methodology can also be applied to other diffraction techniques in which large datasets are collected that include faulty images due to instrumental instabilities.

43 PARTICLE ACCELERATORS↗

NASA NTRS2008

Capillography of Mats of Nanofibers

Capillography (from the Latin capillus, 'hair', and the Greek graphein, to write ) is a recently conceived technique for forming mats of nanofibers into useful patterns. The concept was inspired by experiments on carpetlike mats of multiwalled carbon nanotubes. Capillography may have the potential to be a less-expensive, less-time-consuming alternative to electron-beam lithography as a means of nanoscale patterning for the fabrication of small devices and instruments. In capillography, one exploits the lateral capillary forces exerted on small objects that pierce the surface of a liquid. If the small objects are identical, then the forces are always attractive. Two examples of the effects of such forces are the agglomeration of small particles floating on the surface of a pond and the drawing together of hairs of a wet paintbrush upon removal of the brush from water. Because nanoscale objects brought into contact remain stuck together indefinitely due to Van der Waals forces, patterns formed by capillography remain even upon removal of the liquid. For the experiments on the mats of carbon nanotubes, a surfactant solution capable of wetting carbon nanotubes (which are ultra-hydrophobic) was prepared. The mats were wetted with the solution, then dried. Once the mats were dry, it was found that the nanotubes had become ordered into various patterns, including nestlike indentations, trenches, and various combinations thereof. It may be possible to exploit such ordering effects through controlled wetting and drying of designated portions of mats of carbon nanotubes (and, perhaps, mats of nanofibers of other materials) to obtain patterns similar to those heretofore formed by use of electron-beam lithography. For making patterns that include nestlike indentations, it has been conjectured that it could be possible to control the nesting processes by use of electrostatic fields. Further research is needed to understand the physics of the patterning processes in order to develop capabilities to control patterns formed in capillography.

Noca, Flavio↗

DOE OSTI2022

Multi-physics modeling of grain growth during solidification in electron beam additive manufacturing of Inconel 718

While experimental work has shown promising results regarding control of additive manufacturing metal grain structure, the effects of processing parameters on the grain structure is difficult to understand and predict from experiment alone. To this end, a modeling framework is developed which sequentially couples a macro-scale, semi-analytic thermal model, and a meso-scale, cellular automata-based microstructure model. This framework is applied to electron beam additive manufacturing of Inconel 718 using a complex spot scan pattern. The model shows that, with the same scan pattern, variations in the spot time and electron-beam current produce thermal histories with significant spatial and temporal differences, which then produce complex solidification conditions from the interplay between molten pools in the same layer and subsequent layers, resulting in vastly different grain structures. Additionally, it is noted that the framework can significantly reduce the computational expenses for coupled thermal-metallurgical problems, and has the potential to be used for component level problems.

36 MATERIALS SCIENCE↗

NASA NTRS2000

Fabrication of an Aluminum Based Hot Electron Mixer for Terahertz Applications

Aluminum based diffusion cooled hot electron bolometers (HEB) mixers, predicted to have better noise, bandwidth and to require less LO power than Nb based diffusion cooled HEBs, have been fabricated. Preliminary DC tests were performed. The bolometer elements consisted of short (0.1 to 0.3 micron), narrow (0.08 to 0. 15 micron) and thin (11 nm) aluminum wires connected to large contact pads consisting of a novel trilayer Al/Ti/Au. The patterns were defined by electron beam lithography and the metal deposition involved a double angle process, the Aluminum wires being deposited straight on and the pads being deposited at a 45 degree angle without breaking vacuum. The Al/Ti/Au trilayer was developed to provide a way of making contact between the aluminum wire and the gold antenna. The Titanium layer acts as a diffusion barrier to avoid damage of the Aluminum contact and bolometer wire and to lower the transition temperature of the pads to below that of the bolometer wire. The Au layer avoids the formation of an oxide on the Ti layer and provides good electrical contact to the IF/antenna structure. The resistance of the bolometers as a function of temperature was measured. It is clear that below the transition temperature of the wire (1.8K) but above the transition temperature of the contact pads (0.6K), the proximity effect drives most of the bolometer wire normal, causing a very broad transition. This effect should not affect the performance of the bolometers since they will be operated at a temperature below the TC of the pads. This is evident from the IV characteristics measured at 0.3K. RF characterization tests will begin shortly.

Echternach, P. M.↗

DOE OSTI2022

GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)

Fabricating a vertical-channel junction field-effect transistor includes forming an unintentionally doped GaN layer on a bulk GaN layer by metalorganic chemical vapor deposition, forming a Cr/SiO 2 hard mask on the unintentionally doped GaN layer, patterning a fin by electron beam lithography, defining the Cr and SiO 2 hard masks by reactive ion etching, improving a regrowth surface with inductively coupled plasma etching, removing hard mask residuals, regrowing a p-GaN layer, selectively etching the p-GaN layer, forming gate electrodes by electron beam evaporation, and forming source and drain electrodes by electron beam evaporation. The resulting vertical-channel junction field-effect transistor includes a doped GaN layer, an unintentionally doped GaN layer on the doped GaN layer, and a p-GaN regrowth layer on the unintentionally doped GaN layer. Portions of the p-GaN regrowth layer are separated by a vertical channel of the unintentionally doped GaN layer.

Zhao, Yuji↗

NASA NTRS2004

Patterned Growth of Carbon Nanotubes or Nanofibers

A method and apparatus for the growth of carbon nanotubes or nanofibers in a desired pattern has been invented. The essence of the method is to grow the nanotubes or nanofibers by chemical vapor deposition (CVD) onto a patterned catalyst supported by a substrate. The figure schematically depicts salient aspects of the method and apparatus in a typical application. A substrate is placed in a chamber that contains both ion-beam sputtering and CVD equipment. The substrate can be made of any of a variety of materials that include several forms of silicon or carbon, and selected polymers, metals, ceramics, and even some natural minerals and similar materials. Optionally, the substrate is first coated with a noncatalytic metal layer (which could be a single layer or could comprise multiple different sublayers) by ion-beam sputtering. The choice of metal(s) and thickness(es) of the first layer (if any) and its sublayers (if any) depends on the chemical and electrical properties required for subsequent deposition of the catalyst and the subsequent CVD of the carbon nanotubes. A typical first-sublayer metal is Pt, Pd, Cr, Mo, Ti, W, or an alloy of two or more of these elements. A typical metal for the second sublayer or for an undivided first layer is Al at a thickness .1 nm or Ir at a thickness .5 nm. Proper choice of the metal for a second sublayer of a first layer makes it possible to use a catalyst that is chemically incompatible with the substrate. In the next step, a mask having holes in the desired pattern is placed over the coated substrate. The catalyst is then deposited on the coated substrate by ion-beam sputtering through the mask. Optionally, the catalyst could be deposited by a technique other than sputtering and/or patterned by use of photolithography, electron- beam lithography, or another suitable technique. The catalytic metal can be Fe, Co, Ni, or an alloy of two or more of these elements, deposited to a typical thickness in the range from 0.1 to 20 nm.

Delzeit, Lance D.↗

NASA NTRS1993

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Jordan, Rebecca H.↗

DOE OSTI2020

Variable voltage electron microscopy: Toward atom-by-atom fabrication in 2D materials

The precisely focused electron beam (e-beam) in scanning transmission electron microscopy has been found to be a versatile tool for patterning matter on the atomic level and enabling atom-by-atom fabrication, however, beam-induced phenomena are known to be extremely sensitive to the e-beam energy and are closely correlated with the proximity of the knock-on threshold. Here we provide a method to control the energy transferred to the sample while facilitating much faster changes in accelerating voltages by maintaining a nearly constant temperature in the electron microscope lenses. We use this method to demonstrate in-situ nano-milling of a graphene film followed rapidly by “gentler” imaging at lower energy. Additionally, the insertion and controlled movement of silicon dopants in graphene is demonstrated by employing a different e-beam energy during each process. We believe the incorporation of variable e-beam energy will broaden the potential for atomic scale e-beam fabrication.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Additive Lithography–Organic Monolayer Patterning Coupled with an Area-Selective Deposition

The combination of area-selective deposition (ASD) with a patternable organic monolayer provides a versatile additive lithography platform, enabling the generation of a variety of nanoscale feature geometries. Stearate hydroxamic acid self-assembled monolayers (SAMs) were patterned with extreme ultraviolet (λ = 13.5 nm) or electron beam irradiation and developed with ASD to achieve line space patterns as small as 50 nm. Density functional theory was employed to aid in the synthesis of hydroxamic acid derivatives with optimized packing density to enhance the imaging contrast and improve dose sensitivity. Near-edge X-ray absorption fine structure spectroscopy and infrared spectroscopy reveal that the imaging mechanism is based on improved deposition inhibition provided by the cross-linking of the SAM to produce a more effective barrier during a subsequent deposition step. With patterned substrates composed of coplanar copper lines and silicon spacers, hydroxamic acids selectively formed monolayers on the metal portions and could undergo a pattern-wise exposure followed by ASD in the first combination of a patternable monolayer with ASD. This material system presents an additional capability compared to traditional ASD approaches that generally reflect a starting patterned surface. Finally, this bottoms-up additive approach to lithography may be a viable alternative to subtractive nanoscale feature generation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1998

Multi-Bandwidth Frequency Selective Surfaces for Near Infrared Filtering: Design and Optimization

Frequency selective surfaces are widely used in the microwave and millimeter wave regions of the spectrum for filtering signals. They are used in telecommunication systems for multi-frequency operation or in instrument detectors for spectroscopy. The frequency selective surface operation depends on a periodic array of elements resonating at prescribed wavelengths producing a filter response. The size of the elements is on the order of half the electrical wavelength, and the array period is typically less than a wavelength for efficient operation. When operating in the optical region, diffraction gratings are used for filtering. In this regime the period of the grating may be several wavelengths producing multiple orders of light in reflection or transmission. In regions between these bands (specifically in the infrared band) frequency selective filters consisting of patterned metal layers fabricated using electron beam lithography are beginning to be developed. The operation is completely analogous to surfaces made in the microwave and millimeter wave region except for the choice of materials used and the fabrication process. In addition, the lithography process allows an arbitrary distribution of patterns corresponding to resonances at various wavelengths to be produced. The design of sub-millimeter filters follows the design methods used in the microwave region. Exacting modal matching, integral equation or finite element methods can be used for design. A major difference though is the introduction of material parameters and thicknesses that may not be important in longer wavelength designs. This paper describes the design of multi- bandwidth filters operating in the 1-5 micrometer wavelength range. This work follows on a previous design. In this paper extensions based on further optimization and an examination of the specific shape of the element in the periodic cell will be reported. Results from the design, manufacture and test of linear wedge filters built using microlithographic techniques and used in spectral imaging applications will be presented.

Cwik, Tom↗

NASA NTRS1999

Multi-Bandwidth Frequency Selective Surfaces for Near Infrared Filtering: Design and Optimization

Frequency selective surfaces are widely used in the microwave and millimeter wave regions of the spectrum for filtering signals. They are used in telecommunication systems for multi-frequency operation or in instrument detectors for spectroscopy. The frequency selective surface operation depends on a periodic array of elements resonating at prescribed wavelengths producing a filter response. The size of the elements is on the order of half the electrical wavelength, and the array period is typically less than a wavelength for efficient operation. When operating in the optical region, diffraction gratings are used for filtering. In this regime the period of the grating may be several wavelengths producing multiple orders of light in reflection or transmission. In regions between these bands (specifically in the infrared band) frequency selective filters consisting of patterned metal layers fabricated using electron beam lithography are beginning to be developed. The operation is completely analogous to surfaces made in the microwave and millimeter wave region except for the choice of materials used and the fabrication process. In addition, the lithography process allows an arbitrary distribution of patterns corresponding to resonances at various wavelengths to be produced. The design of sub-millimeter filters follows the design methods used in the microwave region. Exacting modal matching, integral equation or finite element methods can be used for design. A major difference though is the introduction of material parameters and thicknesses tha_ may not be important in longer wavelength designs. This paper describes the design of multi-bandwidth filters operating in the I-5 micrometer wavelength range. This work follows on previous design [1,2]. In this paper extensions based on further optimization and an examination of the specific shape of the element in the periodic cell will be reported. Results from the design, manufacture and test of linear wedge filters built using micro-lithographic techniques and used ir spectral imaging applications will be presented.

Cwik, Tom↗

DOE OSTI2025

Effect of Networking Density on the Patterning Performance of Molecular Layer Deposited Alucone Electron Beam/EUV Resists

One of the main barriers to continued device scaling in the era of extreme ultraviolet (EUV) lithography is the need for improved photoresist chemistries to address challenges such as poor EUV sensitivity, inadequate etch resistance, and pattern collapse. Metal-organic photoresists are a promising class of materials that can address many of these challenges, and among them, resists deposited via hybrid molecular layer deposition (MLD) have attracted interest for their unique advantages in thickness control, chemical homogeneity, and compatibility with vacuum processing. However, despite many successful demonstrations of patterning, little is known about how the molecular design of hybrid MLD resists affects their lithographic performance. In this work, we study the effect of the network structure, a common feature among all hybrid MLD resists, via a series of aluminum alkoxide ("alucone") negative tone resists with varying networking density. Their patterning mechanism is investigated via electron beam lithography (EBL)─a common proxy for EUV─and compared to their EUV-induced reactions studied via flood exposure and in situ characterization. In conclusion, we show that the resist with the least networking density demonstrates the best sensitivity and resolution, with the ability to resolve dense line/space gratings as small as 14 nm half pitch via EBL.

electron beam lithography↗