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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗
DOE OSTI2022

Fragmentation of the edge of a terminated Cu nanolayer within a Nb matrix upon annealing

Here, we investigate the evolution of the tip of a terminated Cu nano-layer embedded within a Nb matrix upon annealing at 800°C. The tip of the terminated Cu layer fragments progressively into a series of single-crystal Cu particles upon continued annealing. This finding shows that layer fragmentation is the second step, after layer pinchoff, in the thermal coarsening of nanolayered metal composites. Comparison to prior phase-field modeling permits us to infer that the mobility at 800°C of Cu-Nb, as modeled by the Cahn-Hillard equation, is M(c)=(M 0 = 7.3 ± 3.6 nm 5 / s • eV) |1 – c 2 |, where the order parameter, c, is 1 for Cu and -1 for Nb.

36 MATERIALS SCIENCE↗
NASA NTRS1989

A direct-inverse transonic wing-design method in curvilinear coordinates including viscous-interaction

Progress in the direct-inverse wing design method in curvilinear coordinates has been made. A spanwise oscillation problem and proposed remedies are discussed. Test cases are presented which reveal the approximate limits on the wing's aspect ratio and leading edge wing sweep angle for a successful design, and which show the significance of spanwise grid skewness, grid refinement, viscous interaction, the initial airfoil section and Mach number-pressure distribution compatibility on the final design. Furthermore, preliminary results are shown which indicate that it is feasible to successfully design a region of the wing which begins aft of the leading edge and terminates prior to the trailing edge.

Ratcliff, Robert R.↗
DOE OSTI2022

Mapping 1D Confined Electromagnetic Edge States in 2D Monolayer Semiconducting MoS 2 Using 4D-STEM

Here, four-dimensional (4D) scanning transmission electron microscopy is used to study the electric fields at the edges of 2D semiconducting monolayer MoS2. Sub-nanometer 1D features in the 2D electric field maps are observed at the outermost region along zigzag edges and also along nanowire MoS-terminated MoS 2 edges. Atomic-scale oscillations are detected in the magnitude of the 1D electromagnetic edge state, with spatial variations that depend on the specific periodic edge reconstructions. Electric field reconstructions, along with integrated differential phase contrast reconstructions, reveal the presence of low Z number atoms terminating many of the uniform edges, which are difficult to detect by annular dark field scanning transmission electron microscopy due to its limited dynamic range. Density functional theory calculations support the formation of periodic 1D edge states and also show that enhancement of the electric field magnitude can occur for some edge terminations. The experimentally observed electric fields at the edges are attributed to the absence of an opposing electric field from a nearest neighbor atom when the electron beam propagates through the 2D monolayer and interacts. These results show the potential of 4D-STEM to map the atomic scale structure and fluctuations of electric fields around edge atoms with different bonding states than bulk atoms in 2D materials, beyond conventional imaging.

2D materials↗
DOE OSTI2022

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗
NASA NTRS1987

The design of blended rolled edges for compact range main reflectors

In a compact range (which employs a parabolic main reflector to convert the spherical wave originating from a point source to a reflected plane wave) the edge-generated diffractive fields degrade the uniformity of the plane wave. To reduce the energy diffracted from the edge surfaces, terminations can be added to the parabola, such that the slope of the surface is continuous at the junctions. This paper discusses the problem of designing an optimized rolled edge. Two examples of reflectors with rolled edges are presented, one with elliptic rolled edges and the other with blended rolled edges, both adhering to the same constraints on minimum operating frequency and size. It was found that the reflector with the cosine-squared blended rolled edges has a much larger usable target zone than the one with the elliptic rolled edges.

Pistorius, C. W. I.↗
DOE OSTI2024

Surface termination effect of $\mathrm{SrTiO_3}$ substrate on ultrathin $\mathrm{SrRuO_3}$

A uniform 1-unit-cell-high step on the SrTiO 3 (STO) substrate is a prerequisite for growing high-quality epitaxial oxide heterostructures. However, it is inevitable that defects induced by mixed substrate-surface termination exist at the interface, significantly impacting the properties of ultrathin films. Here we microscopically identify the origin for the lateral inhomogeneity in the growth of ultrathin SrRuO3 films due to the step effects of SrTiO 3 (001). By using atomic-resolved scanning transmission electron microscopy, we observe two distinct types of step propagation along the [011] and [$0\bar{1}1$] crystallographic direction in SrTiO 3 -SrRuO 3 heterostructures, respectively. In particular, the type-II [$0\bar{1}1$] step results in lateral discontinuity of monolayer SrRuO 3 and originates from the SrO-terminated regions along the TiO 2 -terminated step edge. Such an induced lateral discontinuity should be responsible for the distinct electronic and magnetic properties of monolayer SrRuO 3 . Our findings underscore the critical importance of using single-termination STO substrate to achieve high-quality termination-selective films and to unveil the intrinsic properties of epitaxial films in the atomic limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Magnetic multilayer edges in Bernal-stacked hexagonal boron nitride

Single-layer h-BN is known to have edges with unique magnetism; however, in the commonly fabricated multilayer AA'-h-BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons at the edge. Recently, a robust method of growing the unconventional Bernal-stacked h-BN (AB-h-BN) has been reported. Here, we use theoretical approaches to investigate the nitrogen-terminated zigzag edges in AB-h-BN that can be formed in a controlled fashion using a high-energy electron beam. We find that these "open"edges remain intact in bilayer and multilayer AB-h-BN, enabling researchers potentially to investigate these edge states experimentally. We also investigate the thermodynamics of the spin configurations at the edge by constructing a lattice model that is based on parameters extracted from a set of first-principles calculations. We find that the edge spins in neighboring layers interact very weakly, resulting in a sequence of independent spin chains in multilayer samples. By solving this model using Monte Carlo simulations, we can determine nm-scale correlation lengths at liquid-N 2 temperatures and lower. At low temperatures, these edges may be utilized in magnetoresistance and spintronics applications.

1-dimensional spin chains↗
DOE OSTI2026

Variability of MHD instabilities in benign termination of high-current runaway electron beams in the JET and DIII-D tokamaks

Benign termination, in which magnetohydrodynamic (MHD) instabilities deconfine runaway electrons (REs) following hydrogenic injections, is a promising strategy for mitigating dangerous RE loads after disruptions. Recent experiments on the Joint European Torus (JET) have explored this scenario at higher pre-disruptive plasma currents than are achievable on other devices, revealing challenges in obtaining benign terminations at I p ≥2.5 MA. This work analyzes the evolution of these high-current RE beams and their terminating MHD events using fast magnetic sensor measurements and EFIT equilibrium reconstructions for approximately 40 JET and 20 DIII-D tokamak discharges. On JET, unsuccessful non-benign terminations occur at low edge safety factor (q edge ≈ 2), and are preceded by intermittent, non-terminating MHD events at higher rational qedge. Trends in the internal inductance I i indicate more peaked RE current profiles in the high-I p non-benign population, which may hinder successful recombination through re-ionization of the companion plasma. In contrast, benign terminations on JET typically occur at higher q edge ≥3 and exhibit less peaked RE current profiles. DIII-D displays a broader range of terminating edge safety factors, again correlated with the measured values. Across both tokamaks, the RE current peaking is therefore found to determine which MHD instability boundary is encountered, a result confirmed by linear resistive MHD modeling with the CASTOR3D code. Measured growth rates are similar for benign and non-benign cases, indicating that ideal MHD timescales at low density after hydrogenic injection do not alone explain efficient RE deconfinement. Instead, non-benign cases are most readily characterized by their comparably lower overall MHD perturbation amplitudes δB. These observations suggest that the interplay between ideal and resistive dynamics governs the termination process, with implications for extrapolating benign RE termination to high-I p reactor scenarios.

MHD instabilities↗
NASA NTRS1980

Stress intensity factors in two bonded elastic layers containing cracks perpendicular to and on the interface. Part 1: Analysis

The basic crack problem which is essential for the study of subcritical crack propagation and fracture of layered structural materials is considered. Because of the apparent analytical difficulties, the problem is idealized as one of plane strain or plane stress. An additional simplifying assumption is made by restricting the formulation of the problem to crack geometries and loading conditions which have a plane of symmetry perpendicular to the interface. The general problem is formulated in terms of a coupled system of four integral equations. For each relevant crack configuration of practical interest, the singular behavior of the solution near and at the ends and points of intersection of the cracks is investigated and the related characteristic equations are obtained. The edge crack terminating at and crossing the interface, the T-shaped crack consisting of a broken layer and a delamination crack, the cross-shaped crack which consists of a delamination crack intersecting a crack which is perpendicular to the interface, and a delamination crack initiating from a stress-free boundary of the bonded layers are some of the practical crack geometries considered.

Lu, M. C.↗
NASA NTRS1983

Stress intensity factors in two bonded elastic layers containing cracks perpendicular to and on the interface. I Analysis. II - Solution and results

The basic crack problem which is essential for the study of subcritical crack propagation and fracture of layered structural materials is considered. Because of the apparent analytical difficulties, the problem is idealized as one of plane strain or plane stress. An additional simplifying assumption is made by restricting the formulation of the problem to crack geometries and loading conditions which have a plane of symmetry perpendicular to the interface. The general problem is formulated in terms of a coupled systems of four integral equations. For each relevant crack configuration of practical interest, the singular behavior of the solution near and at the ends and points of intersection of the cracks is investigated and the related characteristic equations are obtained. The edge crack terminating at and crossing the interface, the T-shaped crack consisting of a broken layer and a delamination crack, the cross-shaped crack which consists of a delamination crack intersecting a crack which is perpendicular to the interface, and a delamination crack initiating from a stress-free boundary of the bonded layers are some of the practical crack geometries considered. Previously announced in STAR as N80-18428 and N80-18429

Lu, M.-C.↗
NASA NTRS1984

Fuel cell design and assembly

The present invention is directed to a novel bipolar cooling plate, fuel cell design and method of assembly of fuel cells. The bipolar cooling plate used in the fuel cell design and method of assembly has discrete opposite edge and means carried by the plate defining a plurality of channels extending along the surface of the plate toward the opposite edges. At least one edge of the channels terminates short of the edge of the plate defining a recess for receiving a fastener.

Myerhoff, Alfred↗
NASA NTRS1985

High time resolution plasma wave and magnetic field observations of the Jovian bow shock

High time resolution (60 ms) Voyager magnetometer and plasma wave measurements of a strong (fast Mach number 16), quasi-perpendicular Jovian bow shock reveal an abrupt change in the plasma wave spectrum at the leading edge of the shock foot. Upstream electron plasma waves terminate at the leading edge, and are replaced by a lower-frequency broadband spectrum of ion-acoustic-like waves, which terminates at the main shock ramp. The clear association with the foot region of the lower frequency component suggests that it is generated by reflected ions. If the upstream plasma waves are generated by an escaping electron heat flux, their termination at the leading edge suggests that electrons are heated by the low-frequency waves in the shock foot.

Moses, S. L.↗
DOE OSTI2021

Tuning Electronic Properties of 2D Materials Using Metal Adsorbates: Cu at WTe 2 Edges

Two-dimensional materials exhibit properties promising for novel applications. Topologically protected states at their edges can be harnessed for use in quantum devices. We use ab initio simulations to examine properties of edges in 1T'-WTe 2 monolayers, known to exhibit topological order, and their interactions with Cu atoms. Comparison of (010)-oriented edges that have the same composition but different terminations shows that, as the number of Cu atoms increases, their thermodynamically-preferred arrangement depends on the details of the edge structure. Cu atoms aggregate into a cluster at the most stable edge; while the cluster is non-magnetic, it spin-polarizes the W atoms along the edge, which removes the topological protection. At the metastable edge, Cu atoms form a chain incorporated into the WTe 2 lattice; the topological state is preserved in spite of the dramatic edge restructuring. This suggests that exploiting interactions of metal species with metastable edge terminations can provide a path towards non-invasive interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1974

The radiation from slots in truncated dielectric-covered surfaces

A theoretical approach based on the geometrical theory of diffraction is used to study the electromagnetic radiation from a narrow slot in a dielectric-covered perfectly-conducting surface terminated at an edge. The total far-zone field is composed of a geometrical optics field and a diffracted field. The geometrical optics field is the direct radiation from the slot to the field point. The slot also generates surface waves which are incident at the termination of the dielectric cover, where singly-diffracted rays and reflected surface waves are excited. The diffraction and reflection coefficients are obtained from the canonical problem of the diffraction of a surface wave by a right-angle wedge where the dielectric-covered surface is approximated by an impedance surface. This approximation is satisfactory for a very thin cover; however, the radiation from its vertical and faces cannot be neglected in treating the thicker dielectric cover. This is taken into account by using a Kirchhoff-type approximation, which contributes a second term to the diffraction coefficient previously obtained. The contributions from the geometrical optics field, the singly-diffracted rays and all significant multiply-diffracted rays are summed to give the total radiation. Calculated and measured patterns are found to be in good agreement.

Hwang, Y. M.↗
DOE OSTI2024

Exotic edge states of C 3 high-fold fermions in honeycomb lattices

A generalization of the graphene honeycomb model to the case where each site in the honeycomb lattice contains a n -fold degenerate set of eigenstates of the C 3 symmetry has been recently proposed to describe several systems, including triangulene crystals and photonic lattices. These generalized honeycomb models are defined by ( n a , n b ) , the number of C 3 eigenstates in the a and b sites of the unit cell, resulting in n a + n b bands. Thus, the (1,1) case gives the coventional honeycomb model that describes the two low-energy bands in graphene. Generalizations, such as (2,1), (2,2), and (3,3) display several nontrivial features, such as coexisting graphenelike Dirac cones with flat bands, both at zero and finite energy, as well as robust degeneracy points where a flat band and a parabolic band meet at the Γ point. Here we explore the edge states of this class of crystals, using as reference triangulene crystals, and we find several types of edge states absent in the conventional (1,1) honeycomb case, associated to the nontrivial features of the two-dimensional bands of the high-fold case. First, we find dispersive edge states associated to the finite-energy flat bands, that occur both at the armchair and zigzag termination. Second, in the case of noncentrosymmetric triangulene crystals that lead to a S = 1 Dirac band, we have a bonding-antibonding pair of dispersive edge states, localized in the same edge so that their energy splitting is reduced as their localization increases, opposite to the conventional behavior of pairs of states localized in opposite edges. Third, for the (3,3) case, that hosts a gap separating a pair of flat conduction and valence bands, we find nondispersive edge states with E = 0 in all edge terminations. Published by the American Physical Society 2024

Madail, L. (ORCID:0000000208457748)↗
DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗
NASA NTRS2020

Broadband Characterization of Anti-reflection Coated Starshade Optical Edges for Solar Glint Control

A starshade is a large flower-shaped screen designed to enable the direct imaging of exoplanets with a space telescope. The starshade perimeter is composed of sharp, precisely shaped edges to minimize the glint of sunlight into the telescope. Past work has focused on bare edges to minimize the terminal radius. This paper describes the broadband, wide-angle performance of edges coated with a thin multi-layer anti-reflection coating. This coating uses a combination of interference and absorption to reduce the surface reflectivity and to avoid the negative effects associated with a large cross-sectional area. A custom scattered light testbed has been developed to quantify the amount of light scattered from sample edges and to validate Finite-Difference Time-Domain (FDTD) models of the optical scatter. We show that optical edge samples with this coating significantly reduce the solar glint pattern compared to similar uncoated optical edges.

Sheikh, David↗