Aging behavior of explosively deformed 2219 aluminum.
Aging behavior of explosively deformed 2219 Al investigated by transmission electron microscopy
ELECTRON MICROSCOPY↗
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Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers
Lateral homoepitaxial growth of thin cantilevers emanating from mesa patterns that were reactive ion etched into on-axis commercial SiC substrates prior to growth is reported. The thin cantilevers form after pure stepflow growth removes almost all atomic steps from the top surface of a mesa, after which additional adatoms collected by the large step-free surface migrate to the mesa sidewall where they rapidly incorporate into the crystal near the top of the mesa sidewall. The lateral propagation of the step-free cantilevered surface is significantly affected by pregrowth mesa shape and orientation, with the highest lateral expansion rates observed at the inside concave comers of V-shaped pregrowth mesas with arms lengthwise oriented along the {1100} direction. Complete spanning of the interiors of V's and other mesa shapes with concave comers by webbed cantilevers was accomplished. Optical microscopy, synchrotron white beam x-ray topography and atomic force microscopy analysis of webbed regions formed over a micropipe and closed-core screw dislocations show that c-axis propagation of these defects is terminated by the webbing. Despite the nonoptimized process employed in this initial study, webbed surfaces as large as 1.4 x 10(exp -3) square centimeters, more than four times the pregrowth mesa area, were grown. However, the largest webbed surfaces were not completely free of bilayer steps, due to unintentional growth of 3C-SiC that occurred in the nonoptimized process. Further process optimization should enable larger step-free webs to be realized.
Neudeck, Philip G.↗
Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures
An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.
Kui, J.↗
TPSAS-NF1676L-31770-DND
HREBSD (high resolution electron backscatter diffraction) is a scanning electron microscope based diffraction technique that measures stress, elastic strain and dislocation density in crystalline materials with a spatial resolution on the order of tens of nanometers. This information represents a glut of quantitative data that may be directly incorporated in microscale crystal plasticity models. However, concerns over the accuracy of HREBSD make integration of microscopy data with material models problematic. This presentation addresses a number of issue concerning the accuracy of HREBSD, including pattern center error, cross-correlation error and random noise. Additionally, a computational framework is presented that allows for rapid, non-deterministic calibration of material models. Finally, several tests cases are presented where HREBSD is cross-validated with other diffraction techniques: X-ray diffraction, electron channeling contrast imaging and transmission electron microscopy. The accuracy of HREBSD, when incorporating these new techniques, is sufficient to measure local stress to below 10 MPa and to detect individual dislocations.
Timothy J Ruggles↗
Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa Arrays
Previous studies of (0001) homoepitaxial growth carried out on arrays of small-area mesas etched into on-axis silicon-face 4H-SiC wafers have demonstrated that spiral growth emanating from at least one screw dislocation threading the mesa is necessary in order for a mesa to grow taller in the <0001> (c-axis vertical) direction while maintaining 4H stacking sequence [1]. However, even amongst mesas containing the screw dislocation step source necessary for vertical c-axis growth, we have observed striking differences in the height and faceting that evolve during prolonged homoepitaxial growths. This paper summarizes Atomic Force Microscopy (AFM), Electron Channeling Contrast Imaging (ECCI), Scanning Electron Microscopy (SEM), and optical microscopy observations of this phenomenon. These observations support our initially proposed model [2] that the observed large variation (for mesas where 3C-SiC nucleation has not occurred) is related to the lateral positioning of a screw dislocation step source within each etched mesa. When the screw dislocation step source is located close enough to the developing edge/sidewall facet of a mesa, the c-axis growth rate and facet angle are affected by the resulting interaction. In particular, the intersection (or near intersection) of the inward-sloping mesa sidewall facet with the screw dislocation appears to impede the rate at which the spiral provides new steps required for c-axis growth. Also, the inward slope of the sidewall facet during growth (relative to other sidewalls of the same mesa not near the screw dislocation) seems to be impeded by the screw dislocation. In contrast, mesas whose screw dislocations are centrally located grow vertically, but inward sloping sidewall facets shrink the area of the top (0001) growth surface almost to the point of vanishing.
Neudeck, Philip G.↗
The microstructure and tensile properties of extruded melt-spun ribbons of iron-rich B2 FeAl
The microstructure of extruded rods of iron-rich FeAl(B2-structure), as characterized by TEM, SEM, optical microscopy and x-ray diffractometry, consisted of elongated grains with a 111-line fibre texture containing a high dislocation density. Numerous oxide particles were found, mostly in lines which reflected the matrix flow during extrusion. In addition, some large inclusions were present. Tensile testing of annealed, relatively dislocation-free specimens as a function of increasing temperature found increasing ductility up to 900K, above which a ductility drop occurred accompanied by a change in fracture mode, from transgranular cleavage to intergranular fracture. The yield strength, which was independent of temperature up to 800K (at about 500MPa), also decreased rapidly as diffusion became more important. The predominant slip vector changed from 111-line to 100-line around 700K.
Baker, I.↗
Dislocation Structures in Slightly Strained Tungsten, Tungsten-Rhenium, and Tungsten- Tantalum Alloys
Deformation substructures of W, W-Re and W-Ta alloys, using transmission electron microscopy
Stephens, J. R.↗
High-temperature slow-strain-rate compression studies on CoAl-TiB2 composites
Results are presented of compressive deformation tests performed on particulate-reinforced CoAl-TiB2 composites in the temperature range 1100-1300 K. Hot-pressed and postdeformation microstructures were characterized by TEM and by optical microscopy. It was found that the addition of TiB2 particles improves the deformation resistance of the matrix, due to dislocation-particle interactions.
Mannan, S. K.↗
Ultrasonic determination of recrystallization
Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and colume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.
Generazio, E. R.↗
Ultrasonic attenuation measurements determine onset, degree, and completion of recrystallization
Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and volume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.
Generazio, E. R.↗
Non-equilibrium phase distribution in an Al-SiC composite
The phase distribution in an Al-SiC composite has been investigated using high resolution analytical electron microscopy. Particular attention was focused on Al-SiC interfaces, matrix boundaries and impurity phases which would impede the easy glide of dislocations. Small crystallites of MgO were distributed singly and in clusters along Al-SiC interfaces in all specimens. Interfacial segregation and precipitation involving alloy species apparently affected precipitation in the matrix, where the distribution of phases was found to be very heterogeneous. Matrix phases also included unusually large constituent particles and dispersoids, a consequence of the composite processing methods. The relationship between the observed microstructure and the composite mechanical behavior reported by others is discussed. The heterogeneous distribution of matrix phases is expected to result in a wide variaiton in local yield stress and local work-hardening rate within the composite.
Nutt, S. R.↗
Dislocation structures in slightly strained tungsten and tungsten-rhenium and tungsten-tantalum alloys
Deformation structures of polycrystalline slightly strained tungsten, tungsten rhenium, and tungsten tantalum alloys examined by transmission electron microscopy
DEFORMATION↗
InAs/Ga(1-x)In(x)Sb superlattices for infrared detector applications
The successful growth of InAs/Ga(1-x)In(x)Sb superlattices and their optical and structural characterization is discussed. Samples were grown by molecular beam epitaxy at fairly low substrate temperatures (less than 400 C). Structural quality was assessed by reflection high energy electron difrraction, transmission electron microscopy, and x ray diffraction. Excellent structures were achieved for growth on thick, strain relaxed GaSb buffer layers on GaAs substrates, despite a residual threading dislocation density of 10(exp 9)cm(exp -2) originating at the GaSb/GaAs interface. Despite a lattice mismatch of 1.7 percent, InAs/Ga(0.75)In(0.25)Sb superlattices are observed to be free of misfit dislocations at the thicknesses examined here, owing to the close lattice match between the superlattice and GaSb, which evenly distributes compressive and tensile stresses between the InAs and Ga(0.75)In(0.25)Sb layers. Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strain-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, and are in agreement with the theoretical predictions of Smith and Mailhiot. Energy gaps of 80 to 250 meV (15 to 5 microns) have been measured for InAs/Ga(0.75)In(0.25)Sb superlattices with 45 to 25 A/25 A layer thickness. Results demonstrate that far-infrared cutoff wavelengths are compatible with the thin superlattice layers required for strong optical absorption in type-II superlattices.
Miles, Richard H.↗
The use of analytical surface tools in the fundamental study of wear
Various techniques and surface tools available for the study of the atomic nature of the wear of materials are reviewed These include chemical etching, x-ray diffraction, electron diffraction, scanning electron microscopy, low-energy electron diffraction, Auger emission spectroscopy analysis, electron spectroscopy for chemical analysis, field ion microscopy, and the atom probe. Properties of the surface and wear surface regions which affect wear, such as surface energy, crystal structure, crystallographic orientation, mode of dislocation behavior, and cohesive binding, are discussed. A number of mechanisms involved in the generation of wear particles are identified with the aid of the aforementioned tools.
Buckley, D. H.↗
The use of analytical surface tools in the fundamental study of wear
This paper reviews the various techniques and surface tools available for the study of the atomic nature of the wear of materials. These include chemical etching, X-ray diffraction, electron diffraction, scanning electron microscopy, low-energy electron diffraction, Auger emission spectroscopy analysis, electron spectroscopy for chemical analysis, field ion microscopy, and the atom probe. Properties of the surface and wear surface regions which effect wear such as surface energy, crystal structure, crystallographic orientation, mode of dislocation behavior, and cohesive binding are discussed. A number of mechanisms involved in the generation of wear particles are identified with the aid of the aforementioned tools.
Buckley, D. H.↗
Organometallic chemical vapor deposition and characterization of ZnGeP2/GaP multiple heterostructures on GaP substrates
The growth of ZnGeP2/GaP double and multiple heterostructures on GaP substrates by organometallic chemical vapor deposition is reported. These epitaxial films were deposited at a temperature of 580 C using dimethylzinc, trimethylgallium, germane, and phosphine as source gases. With appropriate deposition conditions, mirror smooth epitaxial GaP/ZnGeP2 multiple heterostructures were obtained on (001) GaP substrates. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) studies of the films showed that the interfaces are sharp and smooth. Etching study of the films showed dislocation density on the order of 5x10(exp 4)cm(sup -2). The growth rates of the GaP layers depend linearly on the flow rates of trimethylgallium. While the GaP layers crystallize in zinc-blende structure, the ZnGeP2 layers crystallize in the chalcopyrite structure as determined by (010) electron diffraction pattern. This is the first time that multiple heterostructures combining these two crystal structures were made.
Xing, G. C.↗
New AFM Techniques for Investigating Molecular Growth Mechanisms of Protein Crystals
Atomic Force Microscopy (AFM) has emerged as a powerful technique for investigating protein crystal growth. Earlier AFM studies were among the first to demonstrate that these crystals grew by dislocation and 2D nucleation growth mechanisms [1]. These investigations were restricted to the micron range where only surface features, such as dislocation hillocks and 2D islands are visible. Most AFM instruments can scan at higher resolutions and have the potential to resolve individual protein molecules at nanometer ranges. Such scans are essential for determining the molecular packing arrangements on crystal faces and for probing the growth process at the molecular level. However, at this resolution the AFM tip influences the image produced, with the resulting image being a convolution of the tip shape and the surface morphology [2]. In most studies this problem is resolved by deconvoluting the image to obtain the true surface morphology. Although deconvolution routines work reasonably well for simple one- dimensional shapes, for complex surfaces this approach does not produce accurate results. In this study we devised a new approach which takes advantage of the precise molecular order of crystal surfaces, combined with the knowledge of individual molecular shapes from the crystallographic data of the protein and the AFM tip shape. This information is used to construct expected theoretical AFM images by convoluting the tip shape with the constructed crystal surface shape for a given surface packing arrangement. By comparing the images from actual AFM scans with the constructed ones for different possible surface packing arrangements, the correct packing arrangement can be conclusively determined. This approach was used in this study to determine the correct one from two possible packing arrangements on (I 10) faces of tetragonal lysozyme crystals. Another novel AFM technique was also devised to measure the dimension of individual growth units of the crystal faces. Measuring these units was not attempted before and most studies have assumed that the growth unit consisted of individual protein molecules. The linescan mode of AFM instruments allows the crystal surface to be scanned along a single line. By scanning across a growth step an image showing the motion of the step is obtained. Normally such an image shows a straight line for continuous and constant step velocity. In this study by increasing the scan rate and by decreasing the step velocity (by decreasing the supersaturation), we were able to capture images of individual growth events, shown by jump discontinuities in the step line. By suitable integration of the image the growth unit dimension in the scanned direction can be obtained. Since multiple units can be involved in the growth process it is necessary to collect a statistically relevant sample before drawing conclusions about the growth mechanism. This technique was successfully employed to obtain the dimensions of growth units for the (110) face, showing that they consisted of various aggregates corresponding to the 43 helices in the crystal structure.
Li, Huayu↗
Study of Dislocation-Ordered In(x)Ga(1-x)As/GaAs Quantum Dots
A report describes an experimental study of dislocation-induced spatial ordering of quantum dots (QDs) comprising nanometer-sized In(x)Ga(1-x)As islands surrounded by GaAs. Metastable heteroepitaxial structures were grown by molecular-beam epitaxy of In(x)Ga(1-x)As onto n+ GaAs and semi-insulating GaAs substrates. Then the structures were relaxed during a post-growth annealing/self-organizing process leading to the formation of surface undulations that acted as preferential sites for the nucleation of QDs. Structural effects of annealing times and temperatures on the strain-relaxed In(x)Ga(1-x)As/GaAs and the subsequent spatial ordering of the QDs were analyzed by atomic-force microscopy and transmission electron microscopy. Continuous-wave spectral and time-resolved photoluminescence (PL) measurements were performed to study the effects, upon optical properties, of increased QD positional ordering, increased QD uniformity, and proximity of QDs to arrays of dislocations. PL spectral peaks of ordered QD structures formed on strain-relaxed In(x)Ga(1-x)As/GaAs layers were found to be narrower than those of structures not so formed and ordered. Rise and decay times of time-resolved PL were found to be lower at lower temperatures -- apparently as a consequence of decreased carrier-transport times within the barriers surrounding the QDs.
Leon, Rose↗