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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Statistics of internal stress fluctuations in dislocated crystals and relevance to density-based dislocation dynamics models

A statistical analysis of internal stress fluctuations, defined as the difference between the local mean stress and stress on dislocations, is presented for deforming crystals with 3D discrete dislocation systems. Dislocation realizations are generated using dislocation dynamics simulations and the associated stress field is computed as a superposition of a regularized stress field of dislocation lines within the domain of the solution and a complementary stress field computed via a finite-element boundary value problem. The internal stress fluctuations of interest are defined by an ensemble of the difference between the stress on dislocation lines and the local mean field stress in the crystal. The latter is established in a piecewise fashion over small voxels in the crystal thus allowing the difference between the local average stress and stress on segments to be easily estimated. The results show that the Schmid stress (resolved shear stress) and Escaig stress fluctuations on various slip systems sampled over a random set of points follow a Cauchy (Lorentz) distribution at all strain levels, with the amplitude and width of the distribution being dependent on the strain. Finally, the implications of the Schmid and Escaig internal stress fluctuations are discussed from the points of view of dislocation cross-slip and the dislocation motion in continuum dislocation dynamics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Phase-field modeling of radiation-induced composition redistribution: An application to additively manufactured austenitic Fe–Cr–Ni

Multicomponent alloys undergoing irradiation damage develop radiation-induced composition redistribution at point defect sinks such as grain boundaries (GBs) and dislocations. Such redistribution results in undesired changes to their mechanical behavior and corrosion resistance. Additively manufactured alloys proposed for future nuclear applications are expected to demonstrate a distinct response to irradiation owing to their unique microstructure with as-solidified dislocation density and chemical microsegregation. To capture the composition redistribution in such systems, we develop a mesoscale model with coupled evolution of atomic and point defect components in the presence of dislocation density, dislocation heterogeneity, and thermodynamic interactions at the GB. The model is parameterized for an FCC Fe–Cr–Ni alloy as a representative system for austenitic stainless steels, and simulations are performed in 1D and 2D as a function of irradiation temperature, dose, dislocation density, and grain size. Radiation-induced segregation (RIS) characterized by Cr depletion and Ni enrichment is predicted at both the GB and the dislocation cell wall, with RIS being lower in magnitude but wider at the cell wall. Strongly biased absorption of self-interstitials by dislocations is found to suppress Ni enrichment but slightly enhance Cr depletion under certain conditions. Thermodynamic segregation at the GB is predicted to be narrower and opposite in sign to RIS for both Cr and Ni. Importantly, non-monotonic segregation is found to occur when both thermodynamic and RIS mechanisms are considered, providing a novel physical interpretation of experimental observations. The model is expected to serve as a key tool in accelerated qualification of irradiated materials.

additively manufactured microstructure↗
NASA NTRS1980

Quantitative analysis of defects in silicon. Silicon sheet growth development for the large are silicon sheet task of the low-cost solar array project

One hundred and seventy four silicon sheet samples were analyzed for twin boundary density, dislocation pit density, and grain boundary length. Procedures were developed for the quantitative analysis of the twin boundary and dislocation pit densities using a QTM-720 Quantitative Image Analyzing system. The QTM-720 system was upgraded with the addition of a PDP 11/03 mini-computer with dual floppy disc drive, a digital equipment writer high speed printer, and a field-image feature interface module. Three versions of a computer program that controls the data acquisition and analysis on the QTM-720 were written. Procedures for the chemical polishing and etching were also developed.

Natesh, R.↗
DOE OSTI2021

Characterization of mechanical deformation in aluminum by optical second harmonic generation

Second harmonic generation (SHG), a laser-based surface technique, was used to characterize near-surface defect evolution associated with mechanical deformation in 2024-T3 aluminum due to tensile loads. Electron backscatter diffraction (EBSD) measurements were also performed to determine the geometrically necessary dislocation density before and after tensile deformation. Comparison of the EBSD and SHG results found that dislocation density and SHG signal are inversely proportional; tensile deformation in the plastic regime led to an increase in dislocation density and a decrease in SHG response. A similar trend was seen in the SHG results on as-received (unpolished) Al samples; SHG response decreases with extent of plastic deformation. Furthermore, this study suggests that SHG has potential as a nondestructive evaluation technique.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Data-driven analysis of neutron diffraction line profiles: application to plastically deformed Ta

Abstract Non-destructive evaluation of plastically deformed metals, particularly diffraction line profile analysis (DLPA), is valuable both to estimate dislocation densities and arrangements and to validate microstructure-aware constitutive models. To date, the interpretation of whole line diffraction profiles relies on the use of semi-analytical models such as the extended convolutional multiple whole profile (eCMWP) method. This study introduces and validates two data-driven DLPA models to extract dislocation densities from experimentally gathered whole line diffraction profiles. Using two distinct virtual diffraction models accounting for both strain and instrument induced broadening, a database of virtual diffraction whole line profiles of Ta single crystals is generated using discrete dislocation dynamics. The databases are mined to create Gaussian process regression-based surrogate models, allowing dislocation densities to be extracted from experimental profiles. The method is validated against 11 experimentally gathered whole line diffraction profiles from plastically deformed Ta polycrystals. The newly proposed model predicts dislocation densities consistent with estimates from eCMWP. Advantageously, this data driven LPA model can distinguish broadening originating from the instrument and from the dislocation content even at low dislocation densities. Finally, the data-driven model is used to explore the effect of heterogeneous dislocation densities in microstructures containing grains, which may lead to more accurate data-driven predictions of dislocation density in plastically deformed polycrystals.

36 MATERIALS SCIENCE↗
NASA NTRS2005

X-ray Characterization of Detached-Grown Germanium Crystals

Germanium (111)-oriented crystals have been grown by the vertical Bridgman technique, in both detached and attached configurations. Microstructural characterization of these crystals has been performed using synchrotron white beam x-ray topography (SWBXT) and double axis x-ray diffraction. Dislocation densities were measured from x-ray topographs obtained using the reflection geometry. For detached-grown crystals, the dislocation density is 4-6 x 10(exp 4) per square centimeter in the seed region, and decreases in the direction of growth to less than 10(exp 3) per square centimeter, and in some crystals reaches less than 10(exp 2) per square centimeter. For crystals grown in the attached configuration, dislocation densities were on the order of 10(exp 4) per square centimeter in the middle of the crystals, increasing to greater than 10(exp 5) per square centimeter near the edge. The measured dislocation densities are in excellent agreement with etch pit density results. The rocking curve linewidths were relatively insensitive to the dislocation densities. However, broadening and splitting of the rocking curves were observed in the vicinity of subgrain boundaries identified by x-ray topography in some of the attached-grown crystals.

Volz, M. P.↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗
NASA NTRS1982

Analysis of defect structure in silicon. Silicon sheet growth development for the large area silicon sheet task of the Low-Cost Solar array Project

One hundred ninety-three silicon sheet samples, approximately 880 square centimeters, were analyzed for twin boundary density, dislocation pit density, and grain boundary length. One hundred fifteen of these samples were manufactured by a heat exchanger method, thirty-eight by edge defined film fed growth, twenty-three by the silicon on ceramics process, and ten by the dendritic web process. Seven solar cells were also step-etched to determine the internal defect distribution on these samples. Procedures were developed or the quantitative characterization of structural defects such as dislocation pits, precipitates, twin & grain boundaries using a QTM 720 quantitative image analyzing system interfaced with a PDP 11/03 mini computer. Characterization of the grain boundary length per unit area for polycrystalline samples was done by using the intercept method on an Olympus HBM Microscope.

Natesh, R.↗
DOE OSTI2024

Microstructural effects on the rotating bending fatigue behavior of Ti–6Al–4V produced via laser powder bed fusion with novel heat treatments

The rotating bending fatigue (RBF) behavior (fully reversed, R = -1) of additively manufactured (AM) Ti–6Al–4V alloy produced via laser powder bed fusion (PBF-L) was investigated with respect to different microstructures achieved through novel heat treatments. The investigation herein seeks to elucidate the effect of microstructure by controlling variables that can affect fatigue behavior in Ti–6Al–4V, such as chemistry, porosity, and surface roughness. In order to control these variables, different hot isostatic pressing (HIP) treatments at 800 °C, 920 °C, and 1050 °C with a 920 °C temper were applied to three sets of Ti–6Al–4V cylinders that originated from the same PBF-L build, such that there were 30 tests per condition. After HIP treatment, the specimens were machined and tested. The highest runout stress was achieved after sub-β transus HIP at 800 °C for 2 h at 200 MPa of pressure. A significant drop in fatigue strength was attributed to large prior-β grains and grain boundary α resulting from super-β transus HIP treated specimens. In conclusion, for the sub-β transus HIP specimens, differences in fatigue strength were attributed to α lath thickness, relative dislocation density, and dislocation boundary strengthening.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thermal Conductivity of AM Fabricated Stainless Steel 316L Part

Thermal properties are an integral part of many diverse engineering applications, and additive manufacturing (AM), particularly laser powder bed fusion (LPBF) is shown to affect thermal properties due to the laser processing parameters. For 316L stainless steel, there is little prior research to determine the effects of the process on thermal properties. In this work, the temperature gradient is shown to create uniform, chess board-like distributions of grains in the build direction. These zones create dislocations which were visualized with EBSD techniques. Processing parameters cause hierarchal grain size distribution, with localized concentrations of small grains and large grains. Thermomechanical stresses in the rapid solidification increases dislocation density during grain formation. Previous research shows a higher density of dislocations decreases local thermal conductivity. Local and bulk thermal conductivity are shown in this work to have statistically lowered values to an average of 10-12 W/m-K compared to 14 W/m-K for conventional 316L.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Progress in Near-Equilibrium Ammonothermal (NEAT) Growth of GaN Substrates for GaN-on-GaN Semiconductor Devices

This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports the evaluation of 2″ GaN substrates and 100 mmbulk GaN crystal grown in our pilot production reactor. Recent progress in oxygen reduction enabled growing NEAT GaN substrates with lower residual oxygen, coloration, and optical absorption. The oxygen concentration was approximately 2 × 1018 cm−2, and the optical absorption coefficient was 1.3 cm−1 at 450 nm. Maps of full-width half maximum (FWHM) of X-ray diffraction rocking curveswere generated for grown crystals and finished wafers. The X-ray rocking curve maps confirmed high-quality and uniform microstructure across the entire surface of the bulk crystals and substrates. The average FWHM of the 50 best bulk crystals from the recent batch was 28 ± 4 arcsec for the 002 diffraction and 34 ± 5 arcsec for the 201 diffraction, with an average radius of curvature of 20 m. X-ray topography measured on both sides of the bulk crystals implied that the density of dislocations wasreduced by one order of magnitude during the NEAT growth. A typical NEAT GaN substrate shows dislocation density of about 2 × 105 cm−2.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A Rate Theory Model of Radiation-Induced Swelling in an Austenitic Stainless Steel

Many rate theory models of cavity (void) swelling have been published over the past 50 years, all having the same, or similar, structures. A rigorous validation of the models has not been possible because of the dearth of information concerning the microstructures that correspond with the swelling data. Whereas the lack of microstructure information is still an issue for historical swelling data, in the past 10–20 years data have been published on the evolution of the microstructure (point defect yields from collision cascades, cavity number densities, and dislocation densities/yield strengths) allowing certain gaps in information to be filled when considering historic swelling data. With reasonable estimates of key microstructure parameters, a standard rate theory model can be applied, and the model parameter space explored, in connection with historical swelling data. By using published data on: (i) yield strength as a function of dose and temperature (to establish an empirical expression for dislocation density evolution); (ii) cavity number densities as a function of temperature; and (iii) freely migrating defect (FMD) production as a function of primary knock-on atom (PKA) spectrum, the necessary parameter and microstructure inputs that were previously unknown can be used in model development. This paper describes a rate-theory model for void swelling of 316 stainless steel irradiated in the EBR-2 reactor as a function of irradiation temperature and neutron dose.

36 MATERIALS SCIENCE↗
NASA NTRS1991

Microstructural changes in Beta-silicon nitride grains upon crystallizing the grain-boundary glass

Crystallizing the grain boundary glass of a liquid phase sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of gamma Y2Si2O7. After 5 h at 1500 C, the gamma Y2Si2O7 had transformed to beta Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta Si3N4 grains. Reasons for the increased dislocation density is discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered materials.

Lee, William E.↗
NASA NTRS1992

Prediction of dislocation generation during Bridgman growth of GaAs crystals

Dislocation densities are generated in GaAs single crystals due to the excessive thermal stresses induced by temperature variations during growth. A viscoplastic material model for GaAs, which takes into account the movement and multiplication of dislocations in the plastic deformation, is developed according to Haasen's theory. The dislocation density is expressed as an internal state variable in this dynamic viscoplastic model. The deformation process is a nonlinear function of stress, strain rate, dislocation density and temperature. The dislocation density in the GaAs crystal during vertical Bridgman growth is calculated using a nonlinear finite element model. The dislocation multiplication in GaAs crystals for several temperature fields obtained from thermal modeling of both the GTE GaAs experimental data and artificially designed data are investigated.

Tsai, C. T.↗
DOE OSTI2024

Investigating Influential Parameters for High-Purity Germanium Crystal Growth

This paper focuses on the research and development of high-purity germanium (HPGe) crystals for detector fabrication, specifically targeting applications in rare-event physics searches. The primary objective was to produce large-scale germanium crystals weighing >1 kg with a controlled diameter of ∼10 cm and an impurity range of approximately 1010/cm 3. Ensuring structural integrity and excellent crystalline quality requires a thorough assessment of dislocation density, a critical aspect of the crystal development process. Dislocation density measurements play a crucial role in maximizing the sensitivity of HPGe detectors, and our findings confirmed that the dislocation density fell within acceptable ranges for detector fabrication. Additionally, this paper examines the segregation coefficient of various contaminants during the crystal development process. Comprehensive analysis of impurity segregation is essential for reducing contaminant quantities in the crystal lattice and customizing purification processes. This, in turn, minimizes undesired background noise, enhancing signal-to-noise ratios for rare-event physics searches and overall detector performance. The investigation included the segregation coefficients of three major acceptors and one donor in crystals grown at the University of South Dakota, providing valuable insights for optimizing crystal purity and detector efficiency.

Bhattarai, Sanjay↗
NASA NTRS1989

Microstructural changes in beta-silicon nitride grains upon crystallizing the grain-boundary glass

Crystallizing the grain-boundary glass of a liquid-phase-sintered Si3N4 ceramic for 2 h or less at 1500 C led to formation of delta-Y2Si2O7. After 5 h at 1500 C, the delta-Y2Si2O7 had transformed to beta-Y2Si2O7 with a concurrent dramatic increase in dislocation density within beta-Si3N4 grains. Reasons for the increased dislocation density are discussed. Annealing for 20 h at 1500 C reduced dislocation densities to the levels found in as-sintered material.

Lee, William E.↗
DOE OSTI2024

Microstructural Evolution of Tantalum During Deformation and Subsequent Annealing

Microstructure-aware models are necessary to predict the behavior of material based on process knowledge or to extrapolate mechanical properties of materials to environmental conditions which are not easily reproduced in the laboratory, e.g., nuclear reactor environments. Elemental Ta provides a relatively simple BCC system in which to develop a microstructural understanding of deformation processes which can then be applied to more complicated BCC alloys. In situ neutron diffraction during compressive deformation and subsequent heat treatment have been used to monitor the evolution of microstructural features in Ta throughout simulated processing steps. Crystallographic texture and dislocation density are determined as a function of first plastic strain, then temperature. Lattice strains are determined and attributed to stresses at macroscopic, grain and dislocation length scales. The increase of the dislocation density through deformation and subsequent recovery during heat treatment is monitored through the changing diffraction line profile. Also, randomization of the texture is used as a signature of recrystallization. The recovery of dislocations through annihilation is not observed to depend on the initial dislocation density in the range studied here. In contrast, recrystallization is observed to depend strongly on the initially dislocation density.

36 MATERIALS SCIENCE↗
DOE OSTI2020

X-ray topography characterization of gallium nitride substrates for power device development

Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0 3 mm 2 containing threading dislocation densities below 10 3 cm -2 in between a grid of strain centers with higher threading dislocation densities (> 10 4 cm -2 ). Basal plane dislocation densities in these areas are as low as 104 cm -2 . By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.

36 MATERIALS SCIENCE↗