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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Diffusion length measurement using the scanning electron microscope

The present work describes a measuring technique employing the scanning electron microscope in which values of the true bulk diffusion length are obtained. It is shown that surface recombination effects can be eliminated through application of highly doped surface field layers. The effects of high injection level and low-high junction current generation are investigated. Results obtained with this technique are compared to those obtained by a penetrating radiation (X-ray) method, and a close agreement is found. The SEM technique is limited to cells that contain a back surface field layer.

Weizer, V. G.↗
NASA NTRS1993

Minority carrier diffusion length and edge surface-recombination velocity in InP

A scanning electron microscope was used to obtain the electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned (edge) surface. An independent technique was used to measure the edge surface-recombination velocity. These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (Donolato, 1982) to obtain the electron (minority carrier) diffusion length.

Hakimzadeh, Roshanak↗
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS2007

Lateral Diffusion Length Changes in HgCdTe Detectors in a Proton Environment

This paper presents a study of the performance degradation in a proton environment of very long wavelength infrared (VLWIR) HgCdTe detectors. The energy dependence of the Non-Ionizing Energy Loss (NIEL) in HgCdTe provides a framework for estimating the responsivity degradation in VLWIR HgCdTe due to on orbit exposure from protons. Banded detector arrays that have different detector designs were irradiated at proton energies of 7, 12, and 63 MeV. These banded detector arrays allo~vedin sight into how the fundamental detector parameters degraded in a proton environment at the three different proton energies. Measured data demonstrated that the detector responsivity degradation at 7 MeV is 5 times larger than the degradation at 63 MeV. The comparison of the responsivity degradation at the different proton energies suggests that the atomic Columbic interaction of the protons with the HgCdTe detector is likely the primary mechanism responsible for the degradation in responsivity at proton energies below 30 MeV.

Hubbs, John E.↗
NASA NTRS1974

Surface photovoltage method extended to silicon solar cell junction

The conventional surface photovoltage (SPV) method is extended to the measurement of the minority carrier diffusion length in diffused semiconductor junctions of the type used in a silicon solar cell. The minority carrier diffusion values obtained by the SPV method agree well with those obtained by the X-ray method. Agreement within experimental error is also obtained between the minority carrier diffusion lengths in solar cell diffusion junctions and in the same materials with n-regions removed by etching, when the SPV method was used in the measurements.

Wang, E. Y.↗
NASA NTRS1971

Damage and recovery characteristics of lithium-containing solar cells.

Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length damage coefficient after recovery were derived using results of short-circuit current, diffusion-length, and reverse-bias capacitance measurements. The damage coefficients were expressed in terms of a single lithium density parameter, the lithium gradient. A fluence dependence was also established, this dependence being the same for both the immediate-post-irradiation and post-recovery cases. Cell recovery rates were found to increase linearly with lithium gradient.

Faith, T. J.↗
NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS1978

Effect of design changes on aerodynamic and acoustic performance of translating-centerbody sonic inlets

An experimental investigation was conducted to determine the effect of design changes on the aerodynamic and acoustic performance of translating centerbody sonic inlets. Scale model inlets were tested in the Lewis Research Center's V/STOL wind tunnel. The effects of centerbody position, entry lip contraction ratio, diffuser length, and diffuser area ratio on inlet total pressure recovery, distortion, and noise suppression were investigated at static conditions and at forward velocity and angle of attack. With the centerbody in the takeoff position (retracted), good aerodynamic and acoustic performance was attained at static conditions and at forward velocity. At 0 deg incidence angle with a sound pressure level reduction of 20 dB, the total pressure recovery was 0.986. Pressure recovery at 50 deg was 0.981. With the centerbody in the approach position (extended), diffuser flow separation occurred at an incidence angle of approximately 20 deg. However, good performance was attained at lower angles. With the centerbody in the takeoff position the ability of the inlet to tolerate high incidence angles was improved by increasing the lip contraction ratio. However, at static conditions with the centerbody in the approach position, an optimum lip contraction ratio appears to exist, with both thinner and thicker lips yielding reduced performance.

Miller, B. A.↗
NASA NTRS1979

Some tests on small-scale rectangular throat ejector

A small scale rectangular throat ejector with plane slot nozzles and a fixed throat area was tested to determine the effects of diffuser sidewall length, diffuser area ratio, and sidewall nozzle position on thrust and mass augmentation. The thrust augmentation ratio varied from approximately 0.9 to 1.1. Although the ejector did not have good thrust augmentation performance, the effects of the parameters studied are believed to indicate probable trends in thrust augmenting ejectors.

Dean, W. N., Jr.↗
NASA NTRS1978

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗
NASA NTRS1981

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗
NASA NTRS1982

Reduction of solar cell efficiency by edge defects across the back-surface-field junction - A developed perimeter model

Material imperfections, impurity clusters and fabrication defects across the back-surface-field junction can degrade the performance of high-efficiency solar cells. The degradation from defects appearing on the circumference of a solar cell is analyzed using a two-region developed perimeter device model. The width of the defective perimeter region is characterized by the range or the distance-of-influence of the defective edge and this width is about two diffusion lengths. The defective edge is characterized by a surface recombination velocity. Family of theoretical curves and numerical examples are presented to show that significant reduction of open-circuit voltage can occur in high-efficiency cells which are thin compared with the diffusion length. In one example, the degradation is decreased from 135 mV to 75 mV when the cell size is increased from 10 to 100 times the diffusion length in a thin cell whose thickness is 1% of the diffusion length.

Sah, C. T.↗
NASA NTRS1986

Simulations of high Mach number perpendicular shocks with resistive electrons

A simulation code which models the ions as microparticles and the electrons as a resistive massless fluid is employed to study the structure of high Mach number perpendicular shocks. It is found that stable stationary shock solutions can be obtained for Alfven Mach numbers (M sub A) between 5 and 60 for upstream plasmas where the ratio of the plasma pressure to the magnetic pressure is 1, providing that the upstream resistive diffusion length is much smaller than the ion inertial length. For much larger resistive diffusion lengths, the magnetic field overshoot is damped, and the imbalance in the electron momentum equation results in a periodic fluctuation of the fraction of reflected ions. In the limit of M sub A of less than 10, the magnetic overshoot and the fraction of reflected ions increase with increasing M sub A, while at higher Mach numbers the fraction of reflected ions peaks at about 40 percent and the magnetic field overshoot increases at a much slower rate. Electron inertial effects are also considered.

Quest, K. B.↗