Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “dielectric function”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗
NASA NTRS1991

Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

Alterovitz, S. A.↗
NASA NTRS1991

Light scattering by nonspherical particles - A refinement to the coupled-dipole method

In the coupled-dipole method, an arbitrary particle is modeled as an array of N polarizable subunits, each of which gives rise to only electric dipole radiation. The Clausius-Mosotti relation is widely used to calculate the polarizability of the subunits that correspond to the dielectric function of the particle that the array represents. The Clausius-Mosotti relation is replaced here with an exact expression for the electric dipole polarizability, and improvement is found in extinction calculations for spheres as compared with Mie theory. Near a Froehlich frequency the coupled-dipole method yields extinction cross sections for spheres and spheroids that compare favorably with the continuous distribution of ellipsoids method and measured values.

Dungey, Clifton E.↗
NASA NTRS1992

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical point of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, Samuel A.↗
NASA NTRS1991

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Alterovitz, S. A.↗
NASA NTRS1995

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

In this paper, calculations of the hole initiated interband impact ionization rate in bulk silicon and GaAs are presented based on an ensemble Monte Carlo simulation with the inclusion of a wave-vector-dependent numerical transition rate formulation. The ionization transition rate is determined for each of the three valence bands, heavy, light, and split-off, using Fermi's golden rule with a two-body, screened Coulomb interaction. The dielectric function used within the calculation is assumed to be wave-vector-dependent. Calculations of the field-dependent impact ionization rate as well as the quantum yield are presented. It is found from both the quantum yield results and examination of the hole distribution function that the effective threshold energy for hole initiated impact ionization is relatively soft, similar to that predicted for the corresponding electron initiated ionization events occur more frequently than either heavy or split-offf initiated ionization events in bulk silicon over the applied electric field strengths examined here, 250-500 kV/cm. Conversely,in GaAs, the vast majority of hole initated ionization events originate from holes within the split-off band.

Oguzman, Ismail H.↗
NASA NTRS1995

Ensemble Monte Carlo calculation of the hole initiated impact ionization rate in bulk GaAs and silicon using a k-dependent, numerical transition rate formulation

The hole initiated impact ionization rate in bulk silicon and GaAs is calculated using a numerical formulation of the impact ionization transition rate incorporated into an ensemble Monte Carlo simulation. The transition rate is calculated from Fermi's golden rule using a two-body screened Coulomb interaction including a wavevector dependent dielectric function. It is found that the effective threshold for hole initiated ionization is relatively soft in both materials, that the split-off band dominates the ionization process in GaAs. and that no clear dominance by any one band is observed in silicon, though the rate out of the light hole band is greatest.

Oguzman, Ismail H.↗
NASA NTRS2002

Monitoring Photodeposition of Polymer Films from Diacetylene Monomer Solutions Using In Situ Real-Time Spectroscopic Ellipsometry

Photodeposition of thin polymer (PDAMNA) films from diacetylene monomer (DAMNA) solutions onto gold coated silica substrates with UV light was studied using the technique of in-situ real time spectroscopic ellipsometry. The dielectric function of PDAMNA was determined; and the thickness of the growing PDAMNA films over a 4 hour time interval was determined using a linear regression fit of the experimental data to a homogeneous four phase optical model. It was found that stirring the solution dramatically lowers the rate of film deposition, suggesting that convection can affect the attachment kinetics of the film to the substrate. Lastly, the morphology of the PDAMNA films was examined using non-contact mode atomic force microscopy.

Hui, Du↗
NASA NTRS2006

Characterization and Modeling of Indium Gallium Antimonide Avalanche Photodiode and of Indium Gallium Arsenide Two-band Detector

A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.

Source record↗
NASA NTRS2018

Dielectric Properties of Conductively Loaded Polyimides in the Far Infrared

The dielectric properties of selected conductively-loaded polyimide samples are characterized in the microwave through far-infrared wavebands. These materials, belonging to the Vespel family, are more readily formed by direct machining than their ceramic-loaded epoxy counterparts and present an interesting solution for realizing absorptive optical control structures. Measurements spanning a spectral range from 1 to 600 cm(exp −1) (0.03–18 THz) were performed and used in parametrization of the media’s dielectric function at frequencies below ≈3 THz.

Helson, Kyle R.↗
NASA NTRSDate not supplied

Development of an Optical Model for the MEDLI2 Radiometer

We present an optical model of the MEDLI2 radiometer, which was flown onboard the Mars 2020 vehicle during atmospheric entry on February 18, 2021. The proposed model takes into account the radiometer geometry and optical phenomena such as reflection, refraction, and absorption to estimate the signal loss inherent in the design of the radiometer. The model serves as a filter, which can be used to convert predicted total radiative heat fluxes on the radiometer window into predicted measured heat fluxes, enabling more accurate comparisons of the radiometer flight data with predicted radiometer measurements. Optical properties of the radiometer’s sapphire window are inferred from spectral transmissivity measurements. A modified Lorentz Oscillator Model is used to represent the dielectric function of the window and is fit to the transmission data. The resulting optical model of the radiometer is validated against experimental data used to measure the dependence of the radiometer output voltage on the incident angle of the light impinging on it. Comparison of predicted radiometer measurements with the MEDLI2 flight data show good agreement between the predicted and measured peak heat fluxes, though offset at different times. A linear increase in the signal loss due to radiometer optics alone is also demonstrated, suggesting that the changing shock angle over the course of the trajectory impacts the signal loss.

MEDLI2↗
NASA NTRS1974

Dielectric properties of soils as a function of moisture content

Soil dielectric constant measurements are reviewed and the dependence of the dielectric constant on various soil parameters is determined. Moisture content is given special attention because of its practical significance in remote sensing and because it represents the single most influential parameter as far as soil dielectric properties are concerned. Relative complex dielectric constant curves are derived as a function of volumetric soil water content at three frequencies (1.3 GHz, 4.0 GHz, and 10.0 GHz) for each of three soil textures (sand, loam, and clay). These curves, presented in both tabular and graphical form, were chosen as representative of the reported experimental data. Calculations based on these curves showed that the power reflection coefficient and emissivity, unlike skin depth, vary only slightly as a function of frequency and soil texture.

Cihlar, J.↗
NASA NTRS1988

Approximation of the dielectric properties of Maxwellian plasmas - Dispersion functions and physical constraints

The dielectric properties of Maxwellian plasmas are approximated using high Pade approximants to the dispersion function and direct approximation of the distribution. Physical constraints on permissible approximations are discussed, and it is found that some previously published results can lead to predictions of qualitatively incorrect wave properties, including unphysical negative damping. Approximate dispersion functions for Maxwellian distributions are given explicitly, and some of the effects of these approximations on the resulting dispersion are discussed. The approximations discussed here are of use both in analytical work and in accelerating large-scale numerical computations.

Robinson, P. A.↗
NASA NTRS2018

Seawater Dielectric Measurements at L-Band with Latest Improvements

Recently, the dielectric constant of seawater at L-band was determined by employing a resonant cavity technique. A dielectric model function has been developed based on the measurement data and the model function has been used for retrieving the ocean salinity. The results indicate that additional accuracy is still needed to resolve the bias correlated with sea surface temperature. This paper reports the improvements that have been made recently for the development of a more accurate seawater dielectric model function. The additional measurements for the open ocean will be addressed in the paper.

L-band↗
NASA NTRS1980

An empirical model for the complex dielectric permittivity of soils as a function of water content

Recent measurements on the dielectric properties of soils have shown that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value at transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas reported in the literature were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of the soil-water mixtures. This model employs the mixing of either the dielectric constants or the refraction indices of ice, water, rock, and air, and treats the transition moisture value as an adjustable parameter. The calculated mixture dielectric constants from the model were found to be in reasonable agreement with the measured results over the entire moisture range of 0-0.5 cu cm/cu cm. The transition moistures derived from the model range from 0.16 to 0.33 and are strongly correlated with the wilting points of the soils estimated from their textures. This relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Wang, J. R.↗
NASA NTRS1978

An empirical model for the complex dielectric permittivity of soils as a function of water content

The recent measurements on the dielectric properties of soils shows that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value of transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of ths soil-water mixtures. The relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Wang, J. R.↗
NASA NTRS1993

VUV thin films, chapter 7

The application of thin film technology to the vacuum ultraviolet (VUV) wavelength region from 120 nm to 230 nm has not been fully exploited in the past because of absorption effects which complicate the accurate determination of the optical functions of dielectric materials. The problem therefore reduces to that of determining the real and imaginary parts of a complex optical function, namely the frequency dependent refractive index n and extinction coefficient k. We discuss techniques for the inverse retrieval of n and k for dielectric materials at VUV wavelengths from measurements of their reflectance and transmittance. Suitable substrate and film materials are identified for application in the VUV. Such applications include coatings for the fabrication of narrow and broadband filters and beamsplitters. The availability of such devices open the VUV regime to high resolution photometry, interferometry and polarimetry both for space based and laboratory applications. This chapter deals with the optics of absorbing multilayers, the determination of the optical functions for several useful materials, and the design of VUV multilayer stacks as applied to the design of narrow and broadband reflection and transmission filters and beamsplitters. Experimental techniques are discussed briefly, and several examples of the optical functions derived for selected materials are presented.

Zukic, Muamer↗