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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2017

The NASA Augmented/Virtual Reality Lab: The State of the Art at KSC

The NASA Augmented Virtual Reality (AVR) Lab at Kennedy Space Center is dedicated to the investigation of Augmented Reality (AR) and Virtual Reality (VR) technologies, with the goal of determining potential uses of these technologies as human-computer interaction (HCI) devices in an aerospace engineering context. Begun in 2012, the AVR Lab has concentrated on commercially available AR and VR devices that are gaining in popularity and use in a number of fields such as gaming, training, and telepresence. We are working with such devices as the Microsoft Kinect, the Oculus Rift, the Leap Motion, the HTC Vive, motion capture systems, and the Microsoft Hololens. The focus of our work has been on human interaction with the virtual environment, which in turn acts as a communications bridge to remote physical devices and environments which the operator cannot or should not control or experience directly. Particularly in reference to dealing with spacecraft and the oftentimes hazardous environments they inhabit, it is our hope that AR and VR technologies can be utilized to increase human safety and mission success by physically removing humans from those hazardous environments while virtually putting them right in the middle of those environments.

Little, William↗
NASA NTRS1992

Simulation of electron transport in quantum well devices

Double barrier resonant tunneling diodes (DBRTD) have received much attention as possible terahertz devices. Despite impressive experimental results, the specifics of the device physics (i.e., how the electrons propagate through the structure) are only qualitatively understood. Therefore, better transport models are warranted if this technology is to mature. In this paper, the Lattice Wigner function is used to explain the important transport issues associated with DBRTD device behavior.

Miller, D. R.↗
DOE OSTI2021

Baseplate Temperature–Dependent Vertical Composition Gradient in Pseudo–Bilayer Films for Printing Non–Fullerene Organic Solar Cells

Numerous previous reports on the sequential deposition (SD) technique have demonstrated that this approach can achieve a p–i–n active layer architecture with an ideal vertical composition gradient, which is one of the critical factors that can influence the physical processes that determine the photovoltaic performance of organic solar cells. Herein, a commonly used photovoltaic system comprised of PM6 as a donor and Y6 as an acceptor is investigated with respect to sequential blade–processing deposition to comprehensively explore the morphology characteristics as a function of baseplate temperature. A systematic study of the temperature–dependent blend morphology elucidates the SD–processed configuration merits and device physics behind temperature–controlled degree of vertical composition gradient, and constructs the temperature–microstructure–property relationship for the corresponding photovoltaic parameters. The result shows, as the temperature increases, the morphology of the active layer has undergone a distinct evolution from the pseudo–bulk heterojunction to a pseudo–planar heterojunction and then to a pseudo–planar bilayer, leading to a non–monotonic correlation between baseplate temperature and device performance. Further, this investigation not only reveals the importance of precisely controlling baseplate temperature for gaining vertical morphology control, but also provides a path toward rational optimization of device performance in the lab–to–fab transition.

14 SOLAR ENERGY↗
DOE OSTI2022

EQC: Ensembled Quantum Computing for Variational Quantum Algorithms

Variational quantum algorithms (VQA), which are comprised of a classical optimizer and a parameterized quantum circuit, emerges as one of the most promising approaches of harvesting quantum power in the noisy-intermediate-scale-quantum (NISQ) era. However, the deployment of VQAs on today's NISQ devices often faces considerable system noise and prohibitively slow training speeds. On the other hand, the expensive supporting sources and infrastructure make quantum computers extremely keen on high utilization. In this paper, we propose a novel way of thinking about a quantum backend: rather than relying on one physical device which tends to introduce platform-specific noise and bias, a quantum ensemble, which distributes quantum tasks across parallel devices, can serve as a virtualized quantum computer for offering reduced noise levels through an adaptive mixture and also provide significantly improved training speeds through parallelization. With this idea, we build a distributive VQA optimization framework called DVQA, serving as the first effort in adopting parallel quantum devices for cooperative VQA training. To further constraint noise and speed-up convergence, we design a model for individual NISQ devices concerning their properties and running conditions, and propose a weighting mechanism for regularizing the returned gradients. Extensive evaluations on 10 IBM-Q quantum devices using the VQE example show that the distributive VQA training framework can substantially boost the training speed by 10.5x on average (up to 86x and at least 5.2x) with improved training accuracy.

Stein, Samuel A.↗
DOE OSTI2023

Eliminating the Imbalanced Mobility Bottlenecks via Reshaping Internal Potential Distribution in Organic Photovoltaics

The imbalanced carrier mobility remains a bottleneck for performance breakthrough in even those organic solar cells (OSCs) with recorded power conversion efficiencies (PCEs). Herein, a counter electrode doping strategy is proposed to reshape the internal potential distribution, which targets to extract the low mobility carriers at far end. Device simulations reveal that the key of this strategy is to partially dope the active layer with a certain depth, therefore it strengthens the electric field for low mobility carriers near counter electrode region while avoids zeroing the electric field near collection electrode region. Taking advantage of these, PCE enhancements are obtained from 15.4% to 16.2% and from 16.9% to 18.0%, respectively, via cathode p-doping and anode n-doping. Extending its application from opaque to semitransparent devices, the PCE of dilute cell rises from 10.5% to 12.1%, with a high light utilization efficiency (LUE) of 3.5%. The findings provide practical solutions to the core device physical problem in OSCs.

14 SOLAR ENERGY↗
DOE OSTI2026

Deploying MARTe2 and MDSplus for Scalable Real-Time Control Systems: A Proof-of-Concept for the SMART Tokamak

The SMART tokamak is a spherical tokamak with flexible shaping that will need a modular and high-performance real-time control system. This work presents the implementation and validation of the MARTe2 framework at the Princeton Plasma Physics Laboratory (PPPL) as a testbed for supporting SMART (University of Seville, Spain). The system integrates MARTe2, MDSplus for data archiving, and user datagram protocol (UDP)-based communication with both synthetic and physical devices. A deterministic control loop was developed using custom control algorithms, showing the system’s ability to operate under strict real-time constraints. The resulting framework is scalable, maintainable, and adaptable to experimental tokamaks like SMART.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2005

Visualization Methods for Viability Studies of Inspection Modules for the Space Shuttle

An effective simulation of an object, process, or task must be similar to that object, process, or task. A simulation could consist of a physical device, a set of mathematical equations, a computer program, a person, or some combination of these. There are many reasons for the use of simulators. Although some of the reasons are unique to a specific situation, there are many general reasons and purposes for using simulators. Some are listed but not limited to (1) Safety, (2) Scarce resources, (3) Teaching/education, (4) Additional capabilities, (5) Flexibility and (6) Cost. Robot simulators are in use for all of these reasons. Virtual environments such as simulators will eliminate physical contact with humans and hence will increase the safety of work environment. Corporations with limited funding and resources may utilize simulators to accomplish their goals while saving manpower and money. A computer simulation is safer than working with a real robot. Robots are typically a scarce resource. Schools typically don t have a large number of robots, if any. Factories don t want the robots not performing useful work unless absolutely necessary. Robot simulators are useful in teaching robotics. A simulator gives a student hands-on experience, if only with a simulator. The simulator is more flexible. A user can quickly change the robot configuration, workcell, or even replace the robot with a different one altogether. In order to be useful, a robot simulator must create a model that accurately performs like the real robot. A powerful simulator is usually thought of as a combination of a CAD package with simulation capabilities. Computer Aided Design (CAD) techniques are used extensively by engineers in virtually all areas of engineering. Parts are designed interactively aided by the graphical display of both wireframe and more realistic shaded renderings. Once a part s dimensions have been specified to the CAD package, designers can view the part from any direction to examine how it will look and perform in relation to other parts. If changes are deemed necessary, the designer can easily make the changes and view the results graphically. However, a complex process of moving parts intended for operation in a complex environment can only be fully understood through the process of animated graphical simulation. A CAD package with simulation capabilities allows the designer to develop geometrical models of the process being designed, as well as the environment in which the process will be used, and then test the process in graphical animation much as the actual physical system would be run . By being able to operate the system of moving and stationary parts, the designer is able to see in simulation how the system will perform under a wide variety of conditions. If, for example, undesired collisions occur between parts of the system, design changes can be easily made without the expense or potential danger of testing the physical system.

Mobasher, Amir A.↗
DOE OSTI2025

Few-mode and anisotropic quantum transport in InSb nanoribbons using an all-van der Waals material-based gate

High-quality electrostatic gating is a fundamental ingredient for successful semiconducting device physics, and a key element of realizing clean quantum transport. Inspired by the widespread improvement of transport quality when two-dimensional van der Waals (vdW) materials are gated exclusively by other vdW materials, we have developed a method for gating non-vdW materials with an all-vdW gate stack, consisting of a hexagonal boron nitride dielectric layer and a few-layer graphite gate electrode. We demonstrate this gating approach on MOVPE-grown InSb nanoribbons (NRs), a novel variant of the InSb nanowire, with a flattened cross-section. In our all-vdW gated NR devices we observe conductance features that are reproducible and have low- to near-zero gate hysteresis. We also report quantized conductance, which persists to lower magnetic fields and longer channel lengths than typical InSb nanowire devices reported to date. Additionally, we observe level splitting that is highly anisotropic in an applied magnetic field, which we attribute to the ribbon cross-section. The performance of our devices is consistent with the reduced disorder expected from the all-vdW gating scheme, and marks the first report of ballistic, few-modes quantum transport in a non-vdW material with an all-vdW gate. Our results establish all-vdW gating as a promising approach for high-quality gating of non-vdW materials for quantum transport, which is in principle applicable generically, beyond InSb systems. In addition, the work showcases the specific potential of all-vdW gate/InSb NR devices for enabling clean quantum devices that may be relevant for spintronics and topological superconductivity studies.

InSb↗
NASA NTRS1976

Gate assisted turn-off thyristor with cathode shunts and dynamic gate

A 1,000-V, 200-A gate-assisted turn-off thyristor (GATT) is described, whose design features include an interdigitated shunted cathode, a dynamic gate, a means for optimizing the carrier lifetime level, and a bypass diode. The device physics of gate-assisted turn-off are reviewed. Based on this, improvements in the design are described. It is shown that a prime failure mode can be eliminated and that the gate-assist signal voltage can be substantially decreased by employing a shunted cathode emitter. The test data show excellent turn-on characteristics due to the dynamic gate and the long perimeter of the edge of the main cathode. Turn-off times as short as 3 microsec are obtained. The combination of controlling the carrier lifetime with a precisely controlled and easily variable irradiation dose of high energy electrons with gate assist current provides for simple, precision tailoring of the device characteristics to the intended application.

Schlegel, E. S.↗
DOE OSTI2022

Early Performance Results on 4th Gen Intel(R) Xeon (R) Scalable Processors with DDR and Intel(R) Xeon(R) processors, codenamed Sapphire Rapids with HBM

The Crossroads supercomputer was designed to simulate some of the most complex physical devices in the world. These simulations routinely require 1/2 petabyte or more of system memory running on thousands of compute nodes for months at a time on the most powerful supercomputers. Improvements in time to solutions for these workloads can have major impact on our mission capabilities. In this paper we present early results of representative application workloads on 4th Gen Intel Xeon and Intel Xeon Processors codenamed Sapphire Rapids with HBM. These results demonstrate an extremely promising 8.57x improvement (node to node) over our prior generation Intel Broadwell (BDW) based HPC systems. No code modifications were required to achieve this speedup, providing a compelling path forward toward major reductions in time to solution and the complexity of physical systems that can be simulated in the future.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 10 12 to 3.76 × 10 14 cm 2 , and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

gallium nitride↗
DOE OSTI2022

Quasi‐Homojunction Organic Nonfullerene Photovoltaics Featuring Fundamentals Distinct from Bulk Heterojunctions

Abstract In contrast to classical bulk heterojunction (BHJ) in organic solar cells (OSCs), the quasi‐homojunction (QHJ) with extremely low donor content (≤10 wt.%) is unusual and generally yields much lower device efficiency. Here, representative polymer donors and nonfullerene acceptors are selected to fabricate QHJ OSCs, and a complete picture for the operation mechanisms of high‐efficiency QHJ devices is illustrated. PTB7‐Th:Y6 QHJ devices at donor:acceptor (D:A) ratios of 1:8 or 1:20 can achieve 95% or 64% of the efficiency obtained from its BHJ counterpart at the optimal D:A ratio of 1:1.2, respectively, whereas QHJ devices with other donors or acceptors suffer from rapid roll‐off of efficiency when the donors are diluted. Through device physics and photophysics analyses, it is observed that a large portion of free charges can be intrinsically generated in the neat Y6 domains rather than at the D/A interface. Y6 also serves as an ambipolar transport channel, so that hole transport as also mainly through Y6 phase. The key role of PTB7‐Th is primarily to reduce charge recombination, likely assisted by enhancing quadrupolar fields within Y6 itself, rather than the previously thought principal roles of light absorption, exciton splitting, and hole transport.

Chemistry↗
DOE OSTI2023

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗
DOE OSTI2023

Mean Field Theory of Self‐Organizing Memristive Connectomes

Abstract Biological neuronal networks are characterized by nonlinear interactions and complex connectivity. Given the growing impetus to build neuromorphic computers, understanding physical devices that exhibit structures and functionalities similar to biological neural networks is an important step toward this goal. Self‐organizing circuits of nanodevices are at the forefront of the research in neuromorphic computing, as their behavior mimics synaptic plasticity features of biological neuronal circuits. However, an effective theory to describe their behavior is lacking. This study provides for the first time an effective mean field theory for the emergent voltage‐induced polymorphism of circuits of a nanowire connectome, showing that the behavior of these circuits can be explained by a low‐dimensional dynamical equation. The equation can be derived from the microscopic dynamics of a single memristive junction in analytical form. The effective model is tested on experiments of nanowire networks and show that it fits both the potentiation and depression of these synapse‐mimicking circuits. It is shown that this theory applies beyond the case of nanowire networks by formulating a general mean‐field theory of conductance transitions in self‐organizing memristive connectomes.

Caravelli, Francesco↗
DOE OSTI2021

Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo 1-x W x Se 2 by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Here, our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Dynamic Process Intensification via Data-Driven Dynamic Optimization: Concept and Application to Ternary Distillation

Process intensification is a design philosophy aimed at making chemical processes safer and more efficient. Its implementation often results in significant modifications to the design and structure of the process, with several conventional unit operations occurring in the same physical device. Traditionally, process intensification has focused on steady-state operation. In our previous works, we introduced dynamic process intensification (DPI) as a new intensification paradigm based on operational changes for conventional or intensified units. DPI is predicated on switching operation between two auxiliary steady states selected via a steady-state optimization calculation that ensures that the system generates, on average and over time, the same products as in nominal steady-state operation, but with favorable economics. This paper extends the DPI concept and introduces a novel dynamic optimization-based DPI strategy (Do-DPI) that involves imposing a true cyclic operation rather than switching between two discrete states. We discuss its implementation using surrogate dynamic models learned via system identification. Here, an extensive case study concerning a ternary distillation column separating a canonical hydrocarbon mixture shows that Do-DPI can reduce energy use by more than 4% relative to steady-state operation, with no significant deviations in product quality and production rate.

42 ENGINEERING↗
DOE OSTI2025

Dial It Down: The Effect of Strongly Interacting Adsorbates on the BiAg 2 Rashba Surface State

Organic semiconductors interfaced with spin–orbit coupled materials offer a rich playground for fundamental studies of controlling spin dynamics in spintronic devices. The adsorbate–surface interactions at such interfaces play a key role in determining the valence electronic and spin structure and consequently, the device physics as well. Here we show that strong adsorbate–surface alloy interaction leads to weakening of the electronic coupling between the surface alloy atoms and quenches the spin–orbit coupled surface state, demonstrated for the case of the strong organic electron acceptor 2,7-dinitropyrene-4,5,9,10-tetrone (NO 2 –PyT, C 16 H 4 N 2 O 8 ) on the Rashba spin–orbit coupled surface alloy BiAg 2 /Ag(111). Furthermore, our findings demonstrate an important challenge associated with using molecular adsorbates to tailor the spin texture in BiAg 2 /Ag(111), and our work provides guidelines to consider while designing interfacial systems to engineer the spin texture in Rashba surface alloys.

36 MATERIALS SCIENCE↗