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At least 55 records · Page 3

Oxygen Management to Avoid Photo-Inactive Cd(S,Se) for Efficient Cd(Se,Te) Solar Cells

Our previous work has demonstrated that the formation of a penternary cadmium chalcogenide Cd(O,S,Se,Te) region can significantly reduce the front interface recombination in Cd(Se,Te)-based thin-film solar cells. In this work, we have shown that oxygen management during the device fabrication is crucial to form this region. While both the CdS and CdSe layer depositions and the postdeposition CdCl2 treatment should be conducted in the presence of oxygen, the CdTe deposition should be conducted in an oxygen-free atmosphere. Improper oxygen management leads to low device performance due to the formation of a photoinactive Cd(S,Se) region and reduced absorber quality. Additionally, we investigated the carrier transport and collection properties in devices with photoinactive Cd(S,Se) and photoactive Cd(O,S,Se,Te) at the front interface to gain comprehensive understanding of the mechanisms that resulted in improved efficiencies approaching 20%.

CdTe deposition↗

Solution-based electrical doping of organic photovoltaics with non-fullerene acceptors facilitated by solvent vapor pre-treatment

Solution-based electrical doping of organic semiconductors using 12-molybdophosphoric acid (PMA) hydrate has been shown to allow p-type doping of conjugated polymers over a limited depth from the surface, enabling the fabrication of organic solar cells with a simplified device architecture. However, the doping level of certain conjugated polymers using PMA was found to be limited by the polymer film volume. Here, we report a modified PMA doping technique based on film volume expansion that is applicable to device fabrication, leading to hole-collecting layer-free non-fullerene organic photovoltaic devices, which exhibit a comparable photovoltaic performance to those with a commonly evaporated MoO3 hole-collecting layer.

Materials Science↗

Co-deposition of hole-selective contact and absorber for improving the processability of perovskite solar cells

Simplifying the manufacturing processes of renewable energy technologies is crucial to lowering the barriers to commercialization. In this context, to improve the manufacturability of perovskite solar cells (PSCs), here we have developed a one-step solution-coating procedure in which the hole-selective contact and perovskite light absorber spontaneously form, resulting in efficient inverted PSCs. We observed that phosphonic or carboxylic acids, incorporated into perovskite precursor solutions, self-assemble on the indium tin oxide substrate during perovskite film processing. They form a robust self-assembled monolayer as an excellent hole-selective contact while the perovskite crystallizes. Our approach solves wettability issues and simplifies device fabrication, advancing the manufacturability of PSCs. Our PSC devices with positive-intrinsic-negative (p-i-n) geometry show a power conversion efficiency of 24.5% and retain >90% of their initial efficiency after 1,200 h of operating at the maximum power point under continuous illumination. The approach shows good generality as it is compatible with different self-assembled monolayer molecular systems, perovskites, solvents and processing methods.

14 SOLAR ENERGY↗

Facile fabrication of 2D material multilayers and vdW heterostructures with multimodal microscopy and AFM characterization

Reliable transfer processes that enable manipulation of two-dimensional (2D) materials, e.g., transition metal dichalcogenides (TMDCs) and MXenes, from one substrate to another has been a necessity for successful device fabrication. Here, with both mechanical exfoliation and chemical vapor deposition (CVD) widely used, a versatile, clean, deterministic, and yet simple transfer technique is highly needed. To address such need, we developed a transfer method that takes advantage of wettability contrast between interfaces without the use of sacrificial layers or chemical processes. More importantly, a setup was developed to carry out this transfer method with high sample selectivity and fine control of the position and orientation of transferred TMDC crystals, a feature required for fabrication of the devices based on vertical 2D heterostructures. Using both exfoliated and CVD grown materials and subsequent atomic force microscopy (AFM), photoluminescence (PL), confocal Raman and tip enhanced Raman spectroscopy (TERS) characterization, we ascertained the quality of interfaces resulting from the transfer process while preserving excellent 2D material integrity. PL and TERS maps revealed nanometer-scale heterogeneities in the interfaces of fabricated heterostructures, which should enable further perfection of the transfer technique. TERS/TEPL information were employed to identify areas suitable for nanodevice fabrication, making the reported transfer and characterization methods ideal for making high quality assembly of 2D heterostructure more accessible, which should facilitate exploration of vertical 2D heterostructures for applications in electronics, batteries, solar cells, and twistronics.

2D material transfer↗

Advanced manufacturing provides tailor-made solutions for crystallography with x-ray free-electron lasers

Serial crystallography at large facilities, such as x-ray free-electron lasers and synchrotrons, evolved as a powerful method for the high-resolution structural investigation of proteins that are critical for human health, thus advancing drug discovery and novel therapies. However, a critical barrier to successful serial crystallography experiments lies in the efficient handling of the protein microcrystals and solutions at microscales. Microfluidics are the obvious approach for any high-throughput, nano-to-microliter sample handling, that also requires design flexibility and rapid prototyping to deal with the variable shapes, sizes, and density of crystals. Here, we discuss recent advances in polymer 3D printing for microfluidics-based serial crystallography research and present a demonstration of emerging, large-scale, nano-3D printing approaches leading into the future of 3D sample environment and delivery device fabrication from liquid jet gas-dynamic virtual nozzles devices to fixed-target sample environment technology.

36 MATERIALS SCIENCE↗

Integrating Emerging Polymer Chemistries for the Advancement of Recyclable, Biodegradable, and Biocompatible Electronics

Abstract Through advances in molecular design, understanding of processing parameters, and development of non‐traditional device fabrication techniques, the field of wearable and implantable skin‐inspired devices is rapidly growing interest in the consumer market. Like previous technological advances, economic growth and efficiency is anticipated, as these devices will enable an augmented level of interaction between humans and the environment. However, the parallel growing electronic waste that is yet to be addressed has already left an adverse impact on the environment and human health. Looking forward, it is imperative to develop both human‐ and environmentally‐friendly electronics, which are contingent on emerging recyclable, biodegradable, and biocompatible polymer technologies. This review provides definitions for recyclable, biodegradable, and biocompatible polymers based on reported literature, an overview of the analytical techniques used to characterize mechanical and chemical property changes, and standard policies for real‐life applications. Then, various strategies in designing the next‐generation of polymers to be recyclable, biodegradable, or biocompatible with enhanced functionalities relative to traditional or commercial polymers are discussed. Finally, electronics that exhibit an element of recyclability, biodegradability, or biocompatibility with new molecular design are highlighted with the anticipation of integrating emerging polymer chemistries into future electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Material and Interface Engineering Strategies to Mitigate Decoherence in Superconducting Qubits

While significant strides have been made to increase the coherence time of superconducting qubits, further advancements are essential for realizing scalable quantum computing. Decoherence is often a result of loss and noise stemming from two-level systems and excess quasiparticles, arising due to material defects, fabrication processes, and ambient exposure, particularly at surfaces and interfaces. Our recent efforts to mitigate these decoherence mechanisms have employed a variety of strategies, including low-loss surface encapsulation materials, advanced substrate preparation techniques, modifications to metal film growth, and the development of novel fabrication processes. The structural and chemical properties of materials, surfaces, and interfaces are studied using scanning probe microscopy, electron microscopy, photoelectron spectroscopy, mass spectrometry, and X-ray diffraction, which is correlated to device performance metrics, including superconducting resonator internal quality factor and qubit T1 time. This information is used to identify and understand material sources of loss and their origins in the device fabrication process. Through multi-institution efforts within SQMS we have identified the loss mechanism of interstitial hydrogen in niobium-based devices and shown how standard fabrication processes introduce these hydrides, developing strategies to mitigate their formation.1 Furthermore, we have characterized the metal-substrate interface, including the loss of niobium-silicides formed at that interface, and developed silicon surface treatments that reduce atomic scale roughness and oxygen content at the metal-substrate and Josephson junction interfaces.2-4 By developing the connection between materials properties and the overall performance of superconducting quantum circuitry, we can develop fabrication strategies to mitigate material losses, thus supporting the ongoing efforts to enhance coherence time in superconducting quantum devices. 1. Torres-Castanedo, C. G.*, Goronzy, D. P.*, et al., Adv. Funct. Mater., 2401365 (2024) 2. Lu, X., et al., Phys. Rev. Materials 6, 064402 (2022) 3. Berti, G., Appl. Phys. Lett. 122, 192605 (2023) 4. Kopas, C. J., Goronzy, D. P., et al., arXiv:2408.02863 (2024)

Goronzy, Dominic P.↗

Demonstration of GaAs-Based Photovoltaics on Acoustically Spalled Surfaces Grown by MOCVD

This study demonstrates the potential of sonic lift-off (SLO) technology for repeatable substrate reuse in gallium arsenide (GaAs)–based photovoltaics (PVs), offering a pathway toward cost effective production for terrestrial PV applications. Single-junction GaAs solar cells fabricated on acoustically spalled substrates achieved performance metrics comparable with those grown on standard commercial substrates, exhibiting short-circuit current densities (J sc ) of approximately 26.2–26.4 mA/cm 2 , open-circuit voltages (V oc ) around 1001 mV, fill factors (FFs) of 84%, and AM1.5G efficiencies near 22%. These results confirm that one reuse cycle can be realized without a performance penalty, offering a direct pathway to reducing substrate cost in fabrication. Furthermore, subsequent reuse of the substrates highlighted critical challenges, as devices fabricated from reused substrates showed significant degradation in performance (J sc of 15.5 mA/cm 2 , V oc of 748 mV, FF of 72%, and efficiency of 8%), primarily due to degradation of the epitaxial structure resulting from repeated spalling cycles.

Acoustic Spalling↗

Laser-induced digital oxidation for copper-based flexible photodetectors

Copper oxide compounds (Cu x O) with bandgaps of 1.3–2.1 eV (CuO) and 2.1–2.6 eV (Cu 2 O) have been investigated as promising p-type semiconducting materials. Cu x O is generally obtained by deposition or thermal oxidation, but those methods are not optimal for flexible substrates. Furthermore, additional patterning steps are required to fabricate devices. In this work, we present an easy, controllable method to fabricate a metal-semiconductor-metal (MSM) photodetector using laser-induced oxidation of a thin Cu film. After laser irradiation, the Cu film is heated under ambient conditions, and this leads to a thermal oxidation reaction, in which Cu oxide is monolithically formed in the Cu film and a Cu-Cu x O-Cu MSM structure is produced. Since the laser offers localized heating, an arbitrary CuxO pattern can be written in the Cu film by spatially controlled heating. In addition, by optimizing the heating time, the laser-induced oxidation can be successfully performed even on a flexible substrate. To study the laser-induced oxidation, we examined the correlation between laser parameters and the oxidation pattern and analyzed the composition using scanning electron microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. Furthermore, we measured the transient photoresponse and employed scanning photocurrent microscopy to investigate the mechanism of carrier transport behavior.

36 MATERIALS SCIENCE↗

Additive‐Free Aqueous MXene Inks for Thermal Inkjet Printing on Textiles

Abstract Direct printing of functional inks onto flexible substrates allows for scalable fabrication of wearable electronics. However, existing ink formulations for inkjet printing require toxic solvents and additives, which make device fabrication more complex, limit substrate compatibility, and hinder device performance. Even water‐based carbon or metal nanoparticle inks require supplemental surfactants, binders, and cosolvents to produce jettable colloidal suspensions. Here, a general approach is demonstrated for formulating conductive inkjet printable, additive‐free aqueous Ti 3 C 2 T x MXene inks for direct printing on various substrates. The rheological properties of the MXene inks are tuned by controlling the Ti 3 C 2 T x flake size and concentration. Ti 3 C 2 T x ‐based electrical conduits and microsupercapacitors (MSCs) are printed on textile and paper substrates by optimizing the nozzle geometry for high‐resolution inkjet printing. The chemical stability and electrical properties of the printed devices are also studied after storing the devices for six months under ambient conditions. Current collector‐free, textile‐based MSCs show areal capacitance values up to 294 mF cm −2 (2 mV s −1 ) in poly(vinyl alcohol)/sulfuric acid gel electrolyte, surpassing reported printed MXene‐based MSCs and inkjet‐printed MSCs using other 2D nanomaterials. This work is an important step toward increasing the functional capacity of conductive inks and simplifying the fabrication of wearable textile‐based electronics.

Uzun, Simge↗

High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III–N and III–V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Modeling and Design of Micro Flux Monitors for Neutron Fluence Measurements

Measuring neutron flux is critical to understanding the characteristics of nuclear reactors and can provide information on the energy spectrum, total neutron fluence, and operational history of a facility. Such measurements are typically performed by irradiating high-purity materials in an operating reactor for a known length of time. By measuring and identifying activation products in the irradiated materials and referencing the energy-dependent cross section of each isotope, the neutron energy spectrum and total fluence can be determined. Historical techniques use a variety of small, individually pressed foils or wires for dosimeter devices, which can result in excessively high levels of radioactivity and complications in handling after irradiation. The present work describes a new neutron dosimetry concept, named the micro flux monitor, that uses semiconductor device fabrication processes to deposit thin films of flux monitoring materials in precise geometries onto a SiC wafer. This approach allows multiple dosimetry materials to be located on a single device, simplifying irradiation and subsequent analysis. The geometry, and therefore mass, of each material can be custom-tailored for a specific application—considering the expected neutron flux, duration of irradiation, and device retrieval time of a facility. Additionally, hundreds of identical dosimetry monitors can be produced simultaneously, reducing fabrication costs. Finally, the extremely thin metal dimensions of these devices could improve the fidelity of neutron fluence measurements by reducing neutron self-shielding and gamma self-attenuation effects.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

Small gap device system and method of fabrication

A small-gap device system, preferably including two or more electrodes and one or more spacers maintaining a gap between two or more of the electrodes. A spacer for a small-gap device system, preferably including a plurality of legs defining a mesh structure. A method of spacer and/or small-gap device fabrication, preferably including: defining lateral features, depositing spacer material, selectively removing spacer material, separating the spacer from a fabrication substrate, and/or assembling the small-gap device.

Schwede, Jared William↗

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Abstract This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads. We conducted an exploration of device fabrication and proposed system-algorithm co-design to boost performance. A novel FeCap device, incorporating an interfacial layer (IL) and$$\text {Hf}_{0.5}\text {Zr}_{0.5}\text {O}_2$$ Hf 0.5 Zr 0.5 O 2 (HZO), ensures a reduction in operating voltage and enhances HZO scaling while being compatible with CMOS circuits. The IL also enriches ferroelectricity and retention properties. When integrated into crossbar arrays, FeCaps and FeFETs demonstrate their effectiveness as IMC components, eliminating sneak paths and enabling selector-less operation, leading to notable improvements in energy efficiency and area utilization. However, it is worth noting that limited capacitance ratios in FeCaps introduced errors in multiply-and-accumulate (MAC) computations. The proposed co-design approach helps in mitigating these errors and achieves high accuracy in classifying the CIFAR-10 dataset, elevating it from a baseline of 10% to 81.7%. FeFETs in crossbars, with a higher on-off ratio, outperform FeCaps, and our proposed charge-based sensing scheme achieved at least an order of magnitude reduction in power consumption, compared to prevalent current-based methods.

Science & Technology - Other Topics↗

Self‐Strain Suppression of the Metal‐to‐Insulator Transition in Phase‐Change Oxide Devices

Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built‐in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase‐change oxides, which allow for control over the metal‐to‐insulator transition. Here, X‐ray nano‐diffraction structural imaging of micro‐devices fabricated with the archetypal phase‐change material vanadium sesquioxide (V 2 O 3 ) is reported. The devices contain a Ga ion‐irradiated region where the metal‐to‐insulator transition critical temperature is lowered, a useful feature for controlling neuron‐like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal‐to‐insulator‐transition. Suppression occurs within the irradiated region or along its edges, depending on the defect‐distribution and the size of the region. The observed self‐straining effect can extend to other phase‐change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase‐change devices and highlight the necessity to study phase transitions at the nanoscale.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Designing metal halide perovskite solar modules for thermomechanical reliability

There is a significant deficiency in perovskite solar module (PSM) stability under thermomechanical stressors which is not well-understood. In this perspective, common issues seen with perovskite solar cell device fabrication related to thermomechanical reliability of PSM processing are discussed, with a focus on how the robustness of device layers and interlayer adhesion can be improved. Film stresses, adhesion of charge transport layers, and instability under light and heat are discussed with the purpose of providing insight on designing PSMs for durability. Processing conditions of encapsulation of PSMs and critical parameters to consider are also examined, and accelerated testing protocols for PSMs are discussed that probe mechanical degradation modes and ensure reliability of devices in the field.

14 SOLAR ENERGY↗

Modulation of recombination zone position for white perovskite/organic emitter hybrid light-emitting devices

We report metal halide perovskites present specific challenges as emitters in large area, surface emission lighting devices. Among these challenges is the vast difference in carrier mobilities between the perovskite and many organic buffer layers typically used in such device fabrication as transport and blocking layers. This can make it difficult to engineer recombination to achieve white emitting devices generally. However, in this work, we introduce unique modulation of excitonic confinement within the perovskite layer of the device stack to control overall placement of the recombination zone. This results in a white light emitter that is bright and highly tunable, providing a path to realize white perovskite related light-emitting devices.

42 ENGINEERING↗