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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Characterization of MMIC devices for active array antennas

Certain aspects of monolithic microwave integrated circuit (MMIC) interconnectivity were investigated. Considerations that lead to preserving the inherently reproducible characteristics of the MMIC are proposed. It is shown that at radio frequencies (RF) greater than 20 GHz, the transition from the MMIC device to other transmission media must be an accurate RF match. It is proposed that the RF match is sufficiently critical to include the transition as part of the delivered MMIC package. The model to analyze several transitions is presented. This model consists of a succession of abrupt discontinuities in printed circuit transmission lines. The analysis of these discontinuities is achieved by the Spectral Galerkin technique, to establish the modes and mode matching, to generate the generalized S parameters of the individual discontinuities. Preliminary results achieved with this method are presented. It is concluded that special effects should be coordinated by the active array antenna industry toward standardization of MMIC packaging and characterization.

Smetana, J.↗
NASA NTRS2005

Characterization of Custom-Designed Charge-Coupled Devices for Applications to Gas and Aerosol Monitoring Sensorcraft Instrument

Custom-designed charge-coupled devices (CCD) for Gas and Aerosols Monitoring Sensorcraft instrument were developed. These custom-designed CCD devices are linear arrays with pixel format of 512x1 elements and pixel size of 10x200 sq m. These devices were characterized at NASA Langley Research Center to achieve a full well capacity as high as 6,000,000 e-. This met the aircraft flight mission requirements in terms of signal-to-noise performance and maximum dynamic range. Characterization and analysis of the electrical and optical properties of the CCDs were carried out at room temperature. This includes measurements of photon transfer curves, gain coefficient histograms, read noise, and spectral response. Test results obtained on these devices successfully demonstrated the objectives of the aircraft flight mission. In this paper, we describe the characterization results and also discuss their applications to future mission.

Refaat, Tamer F.↗
NASA NTRSDate not supplied

Modeling and Simulation Efforts to Support Improved Comfort in ARGOS

BACKGROUND: The Active Response Gravity Offload System (ARGOS) provides an analog environment for extravehicular activity (EVA) testing and training. Discomfort has been observed during longer suited test sessions. While the subject’s core is offloaded during surface EVA evaluations, his/her arms experience full Earth gravity and can become overly fatigued, especially during suited tests which involve reaching and prolonged arm extensions. A device (ARGOS Negation of Gravitational Effects on the Limbs: ANGEL) to offload the weight of the arms and suit sleeves is being developed by JSC’s Flight Systems Branch, and here we present preliminary modeling of that device using the open-source biomechanical tool OpenSim [1,2] with an in-house developed plugin. We analyze a series of motions performed by a single shirt-sleeved subject with goals of characterizing the device, validating the model, and predicting whether reduced gravity conditions (i.e., lunar gravity (Lg) or Martian gravity (Mg)) can be accurately simulated with the device, as well as providing comfort to the ARGOS user. METHODS AND RESULTS: To model the offload device, we augment the OpenSim human model topology with the offload mechanism components and joints, using CAD models to represent the mechanism graphically. The joint angles of the device are either obtained from (1) inverse kinematics (IK) using motion capture markers on the various components of the device or (2) calculated in the OpenSim plugin by modeling how the components configure themselves under the offloading spring tension given a particular IK-derived arm position. Given the joint angles of the device, the resulting force on the arm is computed by the plugin and applied as an external load in inverse dynamics (ID) in order to enable study of overall shoulder joint torques as well as offload achieved. We verify the calculated joint angles by using the inverse kinematic data and the forces from manual measurements of the spring both independently and integrated within the device. We found that calculated joint angles generally represent the angles measured and computed with IK, supporting a possible analysis workflow inputting human motion data and observing system behavior under varied design parameters. In two different device configurations in which the maximum applied force was 131 N, our current model accurately captured force with a difference of 2-3 N from measured loads. Though our initial test was performed with a shirt-sleeve subject, arm weights were added to emulate the weight of the suit sleeve and the subject was positioned in a test stand with a Mark-III Hard Upper Torso (HUT) and Portable Life Support System (PLSS) mockup. Arm range of motion tasks were performed outside of the HUT, inside the HUT, and inside the HUT while using the device. A variety of other upper body tasks were completed as well. In summary, we have developed a model to investigate and verify an upper limb offload device currently in development. We believe this model will be a valuable tool not only for device characterization but also to predict proper configurations to simulate Lg or Mg conditions, investigate range of motion concerns, predict limitations such as internal collisions and contacts, and inform future design improvements.

L B Nilsson↗
NASA NTRS1987

Electro-optical characterization of the Tektronix TK512M-011 charge-coupled device

An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.

Epperson, Patrick M.↗
NASA NTRS2017

Individually Identifiable Surface Acoustic Wave Sensors, Tags and Systems

A surface-launched acoustic wave sensor tag system for remotely sensing and/or providing identification information using sets of surface acoustic wave (SAW) sensor tag devices is characterized by acoustic wave device embodiments that include coding and other diversity techniques to produce groups of sensors that interact minimally, reducing or alleviating code collision problems typical of prior art coded SAW sensors and tags, and specific device embodiments of said coded SAW sensor tags and systems. These sensor/tag devices operate in a system which consists of one or more uniquely identifiable sensor/tag devices and a wireless interrogator. The sensor device incorporates an antenna for receiving incident RF energy and re-radiating the tag identification information and the sensor measured parameter(s). Since there is no power source in or connected to the sensor, it is a passive sensor. The device is wirelessly interrogated by the interrogator.

Hines, Jacqueline H.↗
NASA NTRS1974

Shuttle filter study. Volume 1: Characterization and optimization of filtration devices

A program to develop a new technology base for filtration equipment and comprehensive fluid particulate contamination management techniques was conducted. The study has application to the systems used in the space shuttle and space station projects. The scope of the program is as follows: (1) characterization and optimization of filtration devices, (2) characterization of contaminant generation and contaminant sensitivity at the component level, and (3) development of a comprehensive particulate contamination management plane for space shuttle fluid systems.

Source record↗
NASA NTRS2004

Qualification of Laser Diode Arrays for Mercury Laser Altimeter Mission

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. The MESSENGER mission is flying the Mercury Laser Altimeter (MLA) which is a diode-pumped Nd:YAG laser instrument designed to map the topography of Mercury. The environment imposed on the instrument by the orbital dynamics places special requirements on the laser diode arrays. In order to limit the radiative heating of the satellite from the surface of Mercury, the satellite is designed to have a highly elliptical orbit. The satellite will heat near perigee and cool near apogee. The laser power is cycled during these orbits so that the laser is on for only 30 minutes (perigee) in a 12 hour orbit. The laser heats 10 C while powered up and cools while powered down. In order to simulate these operational conditions, we designed a test to measure the LDA performance while being temperature and power cycled. Though the mission requirements are specific to NASA and performance requirements are derived from unique operating conditions, the results are general and widely applicable. We present results on the performance of twelve LDAs operating for several hundred million pulses. The arrays are 100 watt, quasi-CW, conductively-cooled, 808 nm devices. Prior to testing, we fully characterize each device to establish a baseline for individual array performance and status. Details of this characterization can be found in reference. Arrays are divided into four groups and subjected to the temperature and power cycling matrix are shown.

Stephen, Mark↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗
NASA NTRS1987

Material growth and characterization for solid state devices

During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths.

Collis, Ward J.↗
NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗
NASA NTRS1988

Material growth and characterization for solid state devices

During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used to grow ternary and quaternary alloy III-V semiconductor thin films. Selective area growth of InGaAs was performed on InP substrates using a patterned sputtered quartz or spin-on glass layer. The etch back and growth characteristics with respect to substrate orientation were investigated. The etch back behavior is somewhat different from wet chemical etching with respect to the sidewall profiles which are observed. LPEE was also employed to grow epitaxial layers of InGaAsP alloys on InP substrates. The behavior of Mn as an acceptor dopant was investigated with low temperature Hall coefficient and photoluminescence measurements. A metal-organic vapor phase epitaxy system was partially complete within the grant period. This atmospheric pressure system will be used to deposit III-V compound and alloy semiconductor layers in future research efforts.

Collis, Ward J.↗
NASA NTRS2011

Radiation Characterization of Commercial GaN Devices

Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

HEMT↗
NASA NTRS2023

NASA GRC Solar Cell Characterization Facilities

NASA GRC maintains various equipment to calibrate and characterize photovoltaic devices to Air Mass Zero standards and different space-simulated environments. These characterization capabilities are critical to developing and advancing photovoltaic devices, allowing advancements in various NASA-related projects (Artemis, Lunar Gateway, Human Landing System, etc.). Our facilities include an X-25 Triple source Solar Simulator, G2V Sunbrick, Angstrom Designs pLEDss (Programmable LED Solar Simulator), Thermal Balance facility, ER-2 High Altitude aircraft calibration.

Photovoltaic↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS2004

A Statistical Approach to Characterizing the Reliability of Systems Utilizing HBT Devices

This paper presents a statistical approach to characterizing the reliability of systems with HBT devices. The proposed approach utilizes the statistical reliability information of the HBT individual devices, along with the analysis on the critical paths of the system, to provide more accurate and more comprehensive reliability information about the HBT systems compared to the conventional worst-case method.

hetero bipolar transistors (HBTs)↗
NASA NTRS2012

Performance and Characterization of Magnetic Penetration Thermometer Devices for X-Ray Spectroscopy

We are developing magnetic penetration thermometers (MPTs) for applications in X-ray astronomy. These non-dissipative devices consist of an X-ray absorber in good thermal contact to a superconducting thin film with a transition temperature around T=100mK. A microfabricated superconducting planar inductor underneath is used to store a persistent current and couple the superconductor's diamagnetic response to a readout SQUID. The strong temperature dependence of the diamagnetic response make these devices suitable for highly sensitive macroscopic thermometers that are capable of achieving very high energy resolution. We present results achieved with MPTs consisting of MoAu bilayer sensors attached to overhanging square 250 micron by 250 micron gold absorbers that have demonstrated an energy resolution of delta E_FWHM=2.3eV at an X-ray energy of 5.9keV. A similar device has shown delta E_FWHM=2.0eV at 1.5 keV. Under certain conditions and for specific device geometries, the temperature responsivity of the MPTs can vary on long timescales degrading the spectral performance. We present the characterization of different inductor geometries to optimize the design for the highest possible temperature sensitivity and compare different device designs with respect to responsivity stability.

Porst, J. -P.↗
NASA NTRS1987

High-temperature electronics

In recent years, there was a growing need for electronics capable of sustained high-temperature operation for aerospace propulsion system instrumentation, control and condition monitoring, and integrated sensors. The desired operating temperature in some applications exceeds 600 C, which is well beyond the capability of currently available semiconductor devices. Silicon carbide displays a number of properties which make it very attractive as a semiconductor material, one of which is the ability to retain its electronic integrity at temperatures well above 600 C. An IR-100 award was presented to NASA Lewis in 1983 for developing a chemical vapor deposition process to grow single crystals of this material on standard silicon wafers. Silicon carbide devices were demonstrated above 400 C, but much work remains in the areas of crystal growth, characterization, and device fabrication before the full potential of silicon carbide can be realized. The presentation will conclude with current and future high-temperature electronics program plans. Although the development of silicon carbide falls into the category of high-risk research, the future looks promising, and the potential payoffs are tremendous.

Seng, Gary T.↗
NASA NTRS2003

Portable Wireless LAN Device and Two-way Radio Threat Assessment for Aircraft Navigation Radios

Measurement processes, data and analysis are provided to address the concern for Wireless Local Area Network devices and two-way radios to cause electromagnetic interference to aircraft navigation radio systems. A radiated emission measurement process is developed and spurious radiated emissions from various devices are characterized using reverberation chambers. Spurious radiated emissions in aircraft radio frequency bands from several wireless network devices are compared with baseline emissions from standard computer laptops and personal digital assistants. In addition, spurious radiated emission data in aircraft radio frequency bands from seven pairs of two-way radios are provided, A description of the measurement process, device modes of operation and the measurement results are reported. Aircraft interference path loss measurements were conducted on four Boeing 747 and Boeing 737 aircraft for several aircraft radio systems. The measurement approach is described and the path loss results are compared with existing data from reference documents, standards, and NASA partnerships. In-band on-channel interference thresholds are compiled from an existing reference document. Using these data, a risk assessment is provided for interference from wireless network devices and two-way radios to aircraft systems, including Localizer, Glideslope, Very High Frequency Omnidirectional Range, Microwave Landing System and Global Positioning System. The report compares the interference risks associated with emissions from wireless network devices and two-way radios against standard laptops and personal digital assistants. Existing receiver interference threshold references are identified as to require more data for better interference risk assessments.

Nguyen, Truong X.↗