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At least 55 records · Page 3

All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity

Silicon is the most scalable optoelectronic material but has suffered from its inability to generate directly and efficiently classical or quantum light on-chip. Scaling and integration are the most fundamental challenges facing quantum science and technology. We report an all-silicon quantum light source based on a single atomic emissive center embedded in a silicon-based nanophotonic cavity. We observe a more than 30-fold enhancement of luminescence, a near-unity atom-cavity coupling efficiency, and an 8-fold acceleration of the emission from the all-silicon quantum emissive center. Our work opens immediate avenues for large-scale integrated cavity quantum electrodynamics and quantum light-matter interfaces with applications in quantum communication and networking, sensing, imaging, and computing.

36 MATERIALS SCIENCE↗

Correlated charge noise and relaxation errors in superconducting qubits

In This report, the central challenge in building a quantum computer is error correction. Unlike classical bits, which are susceptible to only one type of error, quantum bits (“qubits”) are susceptible to two types of error, corresponding to flips of the qubit state about the X- and Z-directions. While the Heisenberg Uncertainty Principle precludes simultaneous monitoring of X- and Z-flips on a single qubit, it is possible to encode quantum information in large arrays of entangled qubits that enable accurate monitoring of all errors in the system, provided the error rate is low. Another crucial requirement is that errors cannot be correlated. Here, we characterize a superconducting multiqubit circuit and find that charge fluctuations are highly correlated on a length scale over 600 µm; moreover, discrete charge jumps are accompanied by a strong transient suppression of qubit energy relaxation time across the millimeter-scale chip. The resulting correlated errors are explained in terms of the charging event and phonon-mediated quasiparticle poisoning associated with absorption of gamma rays and cosmic-ray muons in the qubit substrate. Robust quantum error correction will require the development of mitigation strategies to protect multiqubit arrays from correlated errors due to particle impacts.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quantum sensing for emerging energy technologies

The ability to exploit quantum phenomena has enabled sensing technologies with detection limits below the classical limit. Sensors with applications in energy discovery, production, transportation, and consumption can be enhanced through quantum or hybrid quantum-classical sensors. Here, in this Review, we provide an overview of commercial and emerging quantum sensor platforms and their opportunity areas specific to advanced energy technologies. Key examples include: power grid-enhancing-technologies, where quantum magnetometers can detect powerline and transformer faults; electric vehicle-to-grid applications, where chip-scale atomic clocks can enable grid synchronization; and carbon capture and storage, where quantum gravimeters and single-photo LiDAR can detect microscopic leaks. Quantum sensor deployment requires further research into miniaturization and ruggedization for field deployment, cost-reduction, and workforce development. The maturation of clean energy technologies and quantum sensors provide opportunities for synergy, with the integration of quantum sensors into advanced energy technologies maximizing their security, reliability, and efficiency.

critical metals↗

Frequency combs in optically injected terahertz ring quantum cascade lasers

Quantum cascade lasers (QCLs) have emerged as promising candidates for generating chip-scale frequency combs in mid-infrared and terahertz wavelengths. In this work, we demonstrate frequency comb formation in ring terahertz QCLs using the injection of light from a distributed feedback (DFB) laser. The DFB design frequency is chosen to match the modes of the ring cavity (near 3.3 THz), and light from the DFB is injected into the ring QCL via a bus waveguide. By controlling the power and frequency of the optical injection, we show that combs can be selectively formed and controlled in the ring cavity. Numerical modeling suggests that this comb is primarily frequency-modulated in character, with the injection serving to trigger comb formation. We also show that the ring can be used as a filter to control the output of the DFB QCL, potentially being of interest in terahertz photonic integrated circuits. Our work demonstrates that waveguide couplers are a compelling approach for injecting and extracting radiation from ring terahertz combs and offer exciting possibilities for the generation of new comb states in terahertz, such as frequency-modulated waves, solitons, and more.

47 OTHER INSTRUMENTATION↗

Gallium oxide (Ga 2 O 3 ) energy dependent scintillation response to fast neutrons and flash gamma-rays

Gallium oxide is a newly emerged ultrawide bandgap (4.9 eV) semiconductor that is suitable as a combined electronics and radiation detection platform. We have experimentally demonstrated fast neutron and gamma-ray scintillation from Czochralski-grown β-Ga 2 O 3 in a recent series (October 2023) of experiments at the unmoderated pulsed neutron spallation source located at the Los Alamos Neutron Science Center. Using the neutron time-of-flight (TOF) technique and a fast-gated intensified CCD camera, we observed energy-dependent neutron scintillation for neutron energies ranging from 1 to 400 MeV, including the 14.1 MeV neutron energy relevant to D–T fusion. Neutron flux is quantified and calibrated by cascading the scintillator after the fission chamber, enabling a detailed analysis of temporal and energy-dependent characteristics of the scintillation events. Further, a pronounced scintillation signal from the spallation gamma flash with a temporal full width of half maximum of ~4 ns is indicative of the material’s rapid response. Neutron energy dependent scintillation is observed using the TOF method at a 22.6-m distance from the neutron source. These results highlight the possibility of developing a Ga 2 O 3 based fusion neutron diagnostic platform integrated with both scintillation and electronics functions on the integrated chip scale.

47 OTHER INSTRUMENTATION↗

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

Experimental Passive-State Preparation for Continuous-Variable Quantum Communications

In the Gaussian-modulated coherent state quantum key distribution (QKD) protocol, the sender first generates Gaussian-distributed random numbers and then encodes them on weak laser pulses actively by performing amplitude and phase modulations. Recently, an equivalent passive QKD scheme has been proposed by exploring the intrinsic field fluctuations of a thermal source [B. Qi, P. G. Evans, and W. P. Grice, Phys. Rev. A 97, 012317 (2018)]. This passive QKD scheme is especially appealing for chip-scale implementation since no active modulation is required. In this paper, we conduct an experimental study of the passively encoded QKD scheme using an off-the-shelf amplified spontaneous emission source operated in continuous-wave mode. Our results show that the excess noise introduced by the passive state preparation scheme can be effectively suppressed by applying optical attenuation and a secure key can be generated over metro-area distances.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Enhancing Graphene Plasmonic Device Performance via its Dielectric Environment

Graphene plasmons provide a compelling avenue toward chip-scale dynamic tuning of infrared light. Dynamic tunability emerges through controlled alterations in the optical properties of the system defining graphene’s plasmonic dispersion. Typically, electrostatic induced alterations of the carrier concentration in graphene working in conjunction with mobility have been considered the primary factors dictating plasmonic tunability. We find here that the surrounding dielectric environment also plays a primary role, dictating not just the energy of the graphene plasmon but so too the magnitude of its tuning and spectral width. To arrive at this conclusion, poles in the imaginary component of the reflection coefficient are used to efficiently survey the effect of the surrounding dielectric on the tuning of the graphene plasmon. By investigating several common polar materials, optical phonons (i.e., the Reststrahlen band) of the dielectric substrate are shown to appreciably affect not only the plasmon’s spectral location but its tunability, and its resonance shape as well. In particular, tunability is maximized when the resonances are spectrally distant from the Reststrahlen band, whereas sharp resonances (i.e., high-Q) are achievable at the band’s edge. Overall, these observations both underscore the necessity of viewing the dielectric environment in aggregate when considering the plasmonic response derived from two-dimensional materials and provide heuristics to design dynamically tunable graphene-based infrared devices.

36 MATERIALS SCIENCE↗

Quantum Entanglement between Optical and Microwave Photonic Qubits

Entanglement is an extraordinary feature of quantum mechanics. Sources of entangled optical photons were essential to test the foundations of quantum physics through violations of Bell’s inequalities. More recently, entangled many-body states have been realized via strong nonlinear interactions in microwave circuits with superconducting qubits. Here, we demonstrate a chip-scale source of entangled optical and microwave photonic qubits. Our device platform integrates a piezo-optomechanical transducer with a superconducting resonator which is robust under optical illumination. We drive a photon-pair generation process and employ a dual-rail encoding intrinsic to our system to prepare entangled states of microwave and optical photons. We place a lower bound on the fidelity of the entangled state by measuring microwave and optical photons in two orthogonal bases. This entanglement source can directly interface telecom wavelength time-bin qubits and gigahertz frequency superconducting qubits, two well-established platforms for quantum communication and computation, respectively. Published by the American Physical Society 2024

Physics↗

Tunable and efficient ultraviolet generation with periodically poled lithium niobate

On-chip ultraviolet (UV) sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers. However, few material platforms are suitable for integrated UV light generation and manipulation. Of these materials, thin-film lithium niobate offers unique advantages such as sub-micron modal confinement, strong nonlinearity, and quasi-phase matching. Despite these characteristics, its utilization in the UV has remained elusive because of the substantial sensitivity of standard quasi-phase matching to fabrication imperfections, the photorefractive effect, and relatively large losses in this range. Here, we present efficient (197 ± 5%/W/cm 2 ) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip UV powers of ~30 µW and linear wavelength tunability using temperature. These results are enabled with large cross section waveguides, which leads to first-order UV quasi-phase-matching with relatively long poling periods (>1.5 µm). By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Furthermore, our results open up new avenues for UV on-chip sources and chip-scale photonics through compact frequency-doubling of common near-IR laser diodes.

42 ENGINEERING↗

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗

High-Luminance LED Platform for Improved Efficacy in Directional Applications (Final Technical Report)

In this project, Lumileds developed a platform of high-luminance LEDs and LED light engines to increase efficacy and reduce energy consumption of directional lighting applications. The platform was developed through innovations in three key areas: (1) epi and device architectures optimized for high drive current density, breaking through the tradeoff in efficacy (lm/W) vs. emittance (lm/mm 2 ) exhibited by state-of-the-art products; (2) a compact chip-scale package allowing high packing density and thus high overall luminance in multi-emitter arrays; and (3) phosphor technology to enable correlated color temperature (CCT) tuning in multi-emitter arrays with optimized LED utilization, efficacy, color uniformity and color quality. Directional indoor and outdoor lighting applications make up a major portion of the total lighting energy consumption in the U.S, accounting for >40% of the energy savings potential of solid-state lighting. Success of this project helps accelerate the realization of these energy savings both through higher system efficacy and adoption due to new functionality, and thus contributes significantly to realizing the DOE Lighting program goals.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Scaling whole-chip QAOA for higher-order ising spin glass models on heavy-hex graphs

Abstract We show that the quantum approximate optimization algorithm (QAOA) for higher-order, random coefficient, heavy-hex compatible spin glass Ising models has strong parameter concentration across problem sizes from 16 up to 127 qubits for p = 1 up to p = 5, which allows for computationally efficient parameter transfer of QAOA angles. Matrix product state (MPS) simulation is used to compute noise-free QAOA performance. Hardware-compatible short-depth QAOA circuits are executed on ensembles of 100 higher-order Ising models on noisy IBM quantum superconducting processors with 16, 27, and 127 qubits using QAOA angles learned from a single 16-qubit instance using the JuliQAOA tool. We show that the best quantum processors find lower energy solutions up to p = 2 or p = 3, and find mean energies that are about a factor of two off from the noise-free distribution. We show that p = 1 QAOA energy landscapes remain very similar as the problem size increases using NISQ hardware gridsearches with up to a 414 qubit processor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Accelerating Surface Radiation Content to Investigate the Impact of Radon Progeny on Superconducting Qubits

Ionizing radiation in the form of $α$, $β$, $γ$, and additional high-energy particles can induce decoherence via phonon and quasiparticle poisoning in superconducting qubits. Recent studies have explored this effect using cosmic rays or controlled radioactive sources held in the proximity of a qubit package, and have concluded that reductions in such ``external'' environmental radiation may benefit stable operation of qubit devices. However, the effect of long-lived, unstable daughters of $^{222}$Rn that ``plate out'' directly on device and packaging surfaces has not been as extensively explored. This plate-out process, well-known to the dark matter direct detection field, occurs throughout the fabrication and testing lifecycle of a device and (separately) its packaging, and produces a local source of $α$-decays which can remain active for decades. As this scales with chip area, understanding and managing this source of ionizing radiation is relevant for successfully scaling quantum computing architectures to larger numbers of qubits in a radiation-robust way. We present a setup capable of accelerating and enhancing radon daughter plateout by a factor of $7\times10^4$ over ambient, in order to study, \textit{in situ}, the impact of these events on superconducting qubits. We also provide outlook on the potential impact of this source of ionizing radiation on current and future qubit arrays.

Poudel, Sagar S. [South Dakota Sch. Mines Tech.]↗

An assessment of the harvesting and fuel performance of a single-pass cut-and-chip harvester in commercial-scale short-rotation poplar crops as influenced by crop and weather conditions

There is a need for data on commercial-scale harvesting operations in hybrid poplar short rotation crops to better understand costs and logistics, especially for modeling large scale biorefineries. An investigation was conducted on the in-field performance of a single-pass cut-and-chip harvester operating in commercial fields for over 370 individual wagon loads representing a range of crop and field conditions. Mean material capacity peaked at 70 Mg h -1 in dry conditions in lower biomass (<60 Mg ha -1 ), but was only 28 Mg h -1 during wet conditions and often higher standing biomass. Wet ground conditions require the harvester to divert additional power to maintaining forward movement, which results in decreased material capacity and increased fuel consumption. Crops with higher standing biomass had taller trees that do not always feed as smoothly into the harvester, slowing forward progress and lowering material capacity. Mean crop specific fuel consumption, L of fuel per Mg of biomass processed, generally decreased as standing biomass increased. When standing biomass was above 40 Mg ha -1 mean crop specific fuel consumption (FCC) was 1.69 L Mg -1 in dry conditions and 3.98 L Mg -1 in wet conditions, but when standing biomass was below 40 Mg ha-1 FCC increased drastically (as high as 5 L Mg -1 ) because the harvester is putting more effort into forward speed instead of material processing. Developing relationships between material capacity and fuel consumption based on standing biomass and ground conditions at representative scales are essential for conducting environmental and economic analyses of these systems.

09 BIOMASS FUELS↗

An integrated atom array-nanophotonic chip platform with background-free imaging

Arrays of neutral atoms trapped in optical tweezers have emerged as a leading platform for quantum information processing and quantum simulation due to their scalability, reconfigurable connectivity, and high-fidelity operations. Individual atoms are promising candidates for quantum networking due to their capability to emit indistinguishable photons that are entangled with their internal atomic states. Integrating atom arrays with photonic interfaces would enable distributed architectures in which nodes hosting many processing qubits could be efficiently linked together via the distribution of remote entanglement. However, many atom array techniques cease to work in close proximity to photonic interfaces, with atom detection via standard fluorescence imaging presenting a major challenge due to scattering from nearby photonic devices. Here, we demonstrate an architecture that combines atom arrays with up to 64 optical tweezers and a millimeter-scale photonic chip hosting more than 100 nanophotonic cavities. We achieve high-fidelity ( ~ 99.2%), background-free imaging in close proximity to nanofabricated cavities using a multichromatic excitation and detection scheme. The atoms can be imaged while trapped a few hundred nanometers above the dielectric surface, which we verify using Stark shift measurements of the modified trapping potential. Finally, we rearrange atoms into defect-free arrays and load them simultaneously onto the same or multiple devices.

74 ATOMIC AND MOLECULAR PHYSICS↗

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗