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Fractional Chern Insulators in Twisted Bilayer MoTe 2 : A Composite Fermion Perspective
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Growth, characterization, and Chern insulator state in MnBi 2 Te 4 via the chemical vapor transport method
As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.
Observation of Reentrant Correlated Insulators and Interaction-Driven Fermi-Surface Reconstructions at One Magnetic Flux Quantum per Moiré Unit Cell in Magic-Angle Twisted Bilayer Graphene
The discovery of flat bands with nontrivial band topology in magic-angle twisted bilayer graphene (MATBG) has provided a unique platform to study strongly correlated phenomena including superconductivity, correlated insulators, Chern insulators, and magnetism. A fundamental feature of the MATBG, so far unexplored, is its high magnetic field Hofstadter spectrum. Here, we report on a detailed magnetotransport study of a MATBG device in external magnetic fields of up to B = 3 1 T , corresponding to one magnetic flux quantum per moiré unit cell Φ 0 . At Φ 0 , we observe reentrant correlated insulators at a flat band filling factors of ν = + 2 and of ν = + 3 , and interaction-driven Fermi-surface reconstructions at other fillings, which are identified by new sets of Landau levels originating from these. These experimental observations are supplemented by theoretical work that predicts a new set of eight well-isolated flat bands at Φ 0 , of comparable band width, but with different topology than in zero field. Overall, our magnetotransport data reveal a qualitatively new Hofstadter spectrum in MATBG, which arises due to the strong electronic correlations in the reentrant flat bands.
Tunable high spin Chern-number insulator phases in strained Sb monolayer
High spin Chern-number insulators (HSCI) have emerged as a novel 2D topological phase of condensed matter that is beyond the classification of topological quantum chemistry. The HSCI phase with two pairs of gapless helical edge states is robust even in the presence of spin–orbit coupling due to the protection of a “hidden” feature spectrum topology. Here, in this work, we report the observation of a semimetallic Sb monolayer carrying the same band topology as HSCI with the spin Chern number equal to 2. Our calculations further indicate a moderate lattice strain can make Sb monolayer an insulator or a semimetal with a tunable spin Chern number from 0 to 3. The results suggest strained Sb monolayers as a promising platform for exploring exotic properties of the HSCI topological matter.
Theory of topological exciton insulators and condensates in flat Chern bands
Excitons are the neutral quasiparticles that form when Coulomb interactions create bound states between electrons and holes. Due to their bosonic nature, excitons are expected to condense and exhibit superfluidity at sufficiently low temperatures. In interacting Chern insulators, excitons may inherit the nontrivial topology and quantum geometry from the underlying electron wavefunctions. We theoretically investigate the excitonic bound states and superfluidity in flat-band insulators pumped with light. We find that the exciton wavefunctions exhibit vortex structures in momentum space, with the total vorticity being equal to the difference of Chern numbers between the conduction and valence bands. Moreover, both the exciton binding energy and the exciton superfluid density are proportional to the Brillouin-zone average of the quantum metric and the Coulomb potential energy per unit cell. Spontaneous emission of circularly polarized light from radiative decay is a detectable signature of the exciton vorticity. We propose that the vorticity can also be experimentally measured via the nonlinear anomalous Hall effect, whereas the exciton superfluidity can be detected by voltage-drop quantization through a combination of quantum geometry and Aharonov–Casher effect. Topological excitons and their superfluid phase could be realized in flat bands of twisted Van der Waals heterostructures.
Anomalous bilayer quantum Hall effect
In parallel to the condensed-matter realization of quantum Hall (Chern insulators), quantum spin Hall (topological insulators), and fractional quantum Hall (fractional Chern insulators) effects, we propose that bilayer flat band (FB) lattices with one FB in each layer constitute solid-state analogs of bilayer quantum Hall (BQH) system, leading to anomalous BQH effect without a magnetic field. By exact diagonalization of a bilayer kagome lattice Hamiltonian, as a prototypical example, we demonstrate the stabilization of excitonic condensate Halperin's (1,1,1) state at the total filling v T = 1 of the two FBs. Furthermore, by tuning the interlayer tunneling and distance between the kagome layers at v T = 2/3, we show phase transitions among Halperin's (3,3,0), spin-singlet (1,1,2), and particle-hole conjugate of Laughlin's 1/3 states, as previously observed in conventional BQH systems. Furthermore, our work opens a new direction in the field of FB physics by demonstrating bilayer FB materials as an attractive avenue for realizing exotic anomalous BQH states including non-Abelian anyons.
Optical control of topological memory based on orbital magnetization
Under suitable conditions, some twisted graphene multilayers and transition-metal dichalcogenides become Chern insulators, exhibiting the anomalous quantum Hall effect and orbital magnetization due to spontaneous valley polarization. We study the interaction of a Chern insulator with circularly polarized light. Here, the interaction energy contains an antisymmetric term that couples to the helicity of incident light. For a two-band Chern insulator, this term is expressed as an integral involving the Berry curvature of the system. Taking advantage of this interaction, we propose an experimental protocol for switching topological memory based on orbital magnetization by circularly polarized light. Moreover, two laser beams of opposite circular polarization can nucleate domains of opposite magnetization and thus produce an optically configurable domain wall carrying topologically protected chiral edge modes.
Twisted bilayer graphene. IV. Exact insulator ground states and phase diagram
Here, we derive the exact insulator ground states of the projected Hamiltonian of magic-angle twisted bilayer graphene (TBG) flat bands with Coulomb interactions in various limits, and study the perturbations away from these limits. We define the (first) chiral limit where the AA stacking hopping is zero, and a flat limit with exactly flat bands. In the chiral-flat limit, the TBG Hamiltonian has a U(4) × U(4) symmetry, and we find that the exact ground states at integer filling – 4 ≤ $\textit{ν}$ ≤ 4 relative to charge neutrality are Chern insulators of Chern numbers $ν_C$ = 4 – |$\textit{ν}$ |, 2 – |$\textit{ν}$ |, $\cdots$, |$\textit{ν}$ | – 4, all of which are degenerate. This confirms recent experiments where Chern insulators are found to be competitive low-energy states of TBG. When the chiral-flat limit is reduced to the nonchiral-flat limit which has a U(4) symmetry, we find $\textit{ν}$ = 0 , ± 2 has exact ground states of Chern number 0, while $\textit{ν}$ = ±1, ± 3 has perturbative ground states of Chern number $ν_C$ = ± 1, which are U(4) ferromagnetic. In the chiral-nonflat limit with a different U(4) symmetry, different Chern number states are degenerate up to second-order perturbations. In the realistic nonchiral-nonflat case, we find that the perturbative insulator states with Chern number $ν_C$ = 0 (0 < |$ν_C$| < 4 – |$\textit{ν}$ |) at integer fillings $\textit{ν}$ are fully (partially) intervalley coherent, while the insulator states with Chern number |$ν_C$| = 4 – |$\textit{ν}$ | are valley polarized. However, for 0 < |$ν_C$| ≤ 4 – |$\textit{ν}$ |, the fully intervalley coherent states are highly competitive (0.005 meV/electron higher). At nonzero magnetic field |$\textit{B}$ | > 0, a first-order phase transition for $\textit{ν}$ = ± 1, ± 2 from Chern number $ν_C$ = sgn ($\textit{νB}$)(2 – |$\textit{ν}$ |) to $ν_C$ = sgn ($\textit{νB}$)(4 – |$\textit{ν}$ |) is expected, which agrees with recent experimental observations. Lastly, the TBG Hamiltonian reduces into an extended Hubbard model in the stabilizer code limit.
Colloquium : Quantum anomalous Hall effect
The quantum Hall (QH) effect, quantized Hall resistance combined with zero longitudinal resistance, is the characteristic experimental fingerprint of Chern insulators—topologically nontrivial states of two-dimensional matter with broken time-reversal symmetry. In Chern insulators, nontrivial bulk band topology is expressed by chiral states that carry current along sample edges without dissipation. Here, the quantum anomalous Hall (QAH) effect refers to QH effects that occur in the absence of external magnetic fields due to spontaneously broken time-reversal symmetry. The QAH effect has now been realized in four different classes of two-dimensional materials: (i) thin films of magnetically (Cr- and/or V-) doped topological insulators in the (Bi,Sb) 2 T 3 family, (ii) thin films of the intrinsic magnetic topological insulator MnBi 2 Te 4 , (iii) moiré materials formed from graphene, and (iv) moiré materials formed from transition-metal dichalcogenides. In this Colloquium, the physical mechanisms responsible for each class of QAH insulator are reviewed, with both differences and commonalities highlighted, and potential applications of the QAH effect are commented upon.
Loop-current charge density wave driven by long-range Coulomb repulsion on the kagomé lattice
Recent experiments on vanadium-based nonmagnetic kagomé metals AV 3 Sb 5 (A=K,Rb,Cs) revealed evidence for possible spontaneous time-reversal symmetry (TRS) breaking in the charge density wave (CDW) ordered state. The long-sought-after quantum order of loop currents has been suggested as a candidate for the TRS breaking state. However, a microscopic model for the emergence of the loop-current CDW due to electronic correlations is still lacking. Here, in this work, we calculate the susceptibility of the real and imaginary bond orders on the kagomé lattice near van Hove filling, and reveal the importance of next-nearest-neighbor Coulomb repulsion V 2 in triggering the instability toward imaginary bond ordered CDW. The concrete effective single-orbital t–V 1 –V 2 model on the kagomé lattice is then studied, where t and V 1 are the hopping and Coulomb repulsion on the nearest-neighbor bonds. We obtain the mean-field ground states, analyze their properties, and determine the phase diagram in the plane spanned by V 1 and V 2 at van Hove filling. The region dominated by V 1 is occupied by a 2a 0 ×2a 0 real CDW insulator with the inverse of Star-of-David (ISD) bond configuration. Increasing V 2 indeed drives a first-order transition from ISD to stabilized loop-current insulators that exhibit four possible current patterns of different topological properties, leading to orbital Chern insulators. We then extend these results away from van Hove filling and show that electron doping helps the stabilization of loop currents, and gives rise to doped orbital Chern insulators with emergent Chern Fermi pockets carrying large Berry curvature and orbital magnetic moment. Our findings provide a concrete model realization of the loop-current Chern metal at the mean-field level for the TRS breaking normal state of the kagomé superconductors.
Experimental signature of layer skyrmions and implications for band topology in twisted WSe 2 bilayers
Twisted homobilayers of transition-metal dichalcogenides have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator states in twisted MoTe 2 , as well as Chern insulators and unconventional superconductivity in twisted WSe 2 . In these systems, a non-trivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunnelling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here, in this work, we report experimental signatures of skyrmion textures in the layer degree of freedom of rhombohedral-stacked twisted WSe 2 homobilayers. Using scanning tunnelling spectroscopy that separately resolves the Γ-valley and K-valley moiré electronic states, we reveal opposite layer polarizations of the K valley at two different lattice sites with opposite stacking order within the moiré unit cell. These findings are consistent with the theoretically predicted layer-skyrmion texture. We also use our experimental results to parameterize a common continuum model of moiré bands in twisted bilayers, further establishing a direct correlation between the shape of the local density of states in real space and the topology of the topmost moiré band.
Ferromagnetism with in-plane magnetization, Dirac spin-gapless semiconducting properties, and tunable topological states in two-dimensional rare-earth metal dinitrides
Since the successful synthesis of bulk single crystals MoN 2 and ReN 2 , which have a layered structure, transition-metal dinitrides have attracted considerable attention in recent years. Here, we focus on rare-earth metal (Rem) elements, and propose seven stable Rem dinitride monolayers with a 1T structure, namely, 1T-RemN 2 . We use first-principles calculations, and find that these monolayers have a ferromagnetic ground state with in-plane magnetization. Without spin-orbit coupling (SOC), the band structures are spin-polarized with Dirac points at the Fermi level. Remarkably, the 1T-LuN 2 monolayer exhibits an isotropic magnetocrystalline anisotropy energy in the xy plane with in-plane magnetization, indicating easy tunability of the magnetization direction. Additionally, when rotating the magnetization vector in the xy plane, we propose a model that accurately describes the variation of the SOC band gap and the two possible topological states (Weyl-like semimetal and Chern insulator states) whose properties are tunable. The Weyl-like semimetal state is a critical point between the two Chern insulator states with opposite sign of the Chern numbers (±1). The nontrivial band gap (up to 60.3 meV) and the Weyl-like semimetal state are promising for applications in spintronic devices.
Electromagnetic response and emergent topological orders in transition metal dichalcogenide MoTe 2 bilayers
Twisted bilayer transition metal dichalcogenides, such as MoTe 2 , provide a versatile platform for exploring correlated topological phases. This work investigates the interplay between perpendicular magnetic and electric fields in tuning the electronic structure and emergent topological orders of twisted bilayer MoTe 2 (t-MoTe 2 ) across two distinct regimes: a low-twist-angle phase (θ ≈ 2.1°) hosting multiple Chern bands of identical Chern numbers per valley, and a higher-angle phase (θ ≈ 3.89°) featuring Haldane-like bands with opposite Chern numbers. Using a continuum model incorporating moiré potentials up to second harmonics, we compute the Hofstadter fractal spectra under applied fields, revealing Landau fan structures and magnetic-flux-dependent band topology. These fractal spectra are useful in studying emergent topological orders in terms of the composite fermion picture, where the statistical Chern-Simons flux is approximated as a uniform gauge field. We demonstrate that the system hosts both Jain-sequence fractional Chern insulators (FCIs) and non-Jain fractal FCIs with higher Chern numbers. As a result, the electric field suppresses composite fermion gaps and induces topological quantum phase transitions. Furthermore, our analysis extends to valley-contrasting flux attachment, proposing pathways to describe fractional quantum spin Hall states.
Charge Conservation beyond Uniformity: Spatially Inhomogeneous Electromagnetic Response in Periodic Solids
Nonlinear electromagnetic response functions have reemerged as a crucial tool for studying quantum materials, due to recently appreciated connections between optical response functions, quantum geometry, and band topology. Most attention has been paid to responses to spatially uniform electric fields, relevant to low-energy optical experiments in conventional solid state materials. However, magnetic and magnetoelectric phenomena are naturally connected by responses to spatially varying electric fields due to Maxwell’s equations. Furthermore, in the emerging field of moiré materials, characteristic lattice scales are much longer, allowing spatial variation of optical electric fields to potentially have a measurable effect in experiments. In order to address these issues, we develop a formalism for computing linear and nonlinear responses to spatially inhomogeneous electromagnetic fields. Starting with the continuity equation, we derive an expression for the second-quantized current operator that is manifestly conserved and model independent. Crucially, our formalism makes no assumptions on the form of the microscopic Hamiltonian and so is applicable to model Hamiltonians derived from tight-binding or calculations. We then develop a diagrammatic Kubo formalism for computing the wave vector dependence of linear and nonlinear conductivities, using Ward identities to fix the value of the diamagnetic current order by order in the vector potential. We apply our formula to compute the magnitude of the Kerr effect at oblique incidence for a model of a moiré-Chern insulator and demonstrate the experimental relevance of spatially inhomogeneous fields in these systems. We further show how our formalism allows us to compute the (orbital) magnetic multipole moments and magnetic susceptibilities in insulators. Turning to nonlinear response, we use our formalism to compute the second-order transverse response to spatially varying transverse electric fields in our moiré-Chern insulator model, with an eye toward the next generation of experiments in these systems. Published by the American Physical Society 2024
Fractional Quantum Anomalous Hall Effect
The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.
Recent progress in MnBi2 n Te3 n +1 intrinsic magnetic topological insulators: crystal growth, magnetism and chemical disorder
ABSTRACT The search for magnetic topological materials has been at the forefront of condensed matter research for their potential to host exotic states such as axion insulators, magnetic Weyl semimetals, Chern insulators, etc. To date, the MnBi2nTe3n+1 family is the only group of materials showcasing van der Waals-layered structures, intrinsic magnetism and non-trivial band topology without trivial bands at the Fermi level. The interplay between magnetism and band topology in this family has led to the proposal of various topological phenomena, including the quantum anomalous Hall effect, quantum spin Hall effect and quantum magnetoelectric effect. Among these, the quantum anomalous Hall effect has been experimentally observed at record-high temperatures, highlighting the unprecedented potential of this family of materials in fundamental science and technological innovation. In this paper, we provide a comprehensive review of the research progress in this intrinsic magnetic topological insulator family, with a focus on single-crystal growth, characterization of chemical disorder, manipulation of magnetism through chemical substitution and external pressure, and important questions that remain to be conclusively answered.