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NASA NTRS1989

Distortion and regulation characterization of a Mapham inverter

Output-voltage total harmonic distortion (THD) of a 20-kHz, 6-kVA Mapham resonant inverter is characterized as a function of its switching-to-resonant frequency ratio, f(s)/f(r), using the EASY5 Engineering Analysis System. EASY5 circuit simulation results are compared with hardware test results to verify the accuracy of the simulations. The effects of load on the THD versus f(s)/f(r) is investigated for resistive, leading, and lagging power factor load impedances. The effect of the series output capacitor on the Mapham inverter output-voltage distortion and inherent load regulation is characterized under loads of various power factors and magnitudes. An optimum series capacitor value which improves the inherent load regulation to better than 3 percent is identified. The optimum series capacitor value is different from the value predicted from a modeled frequency domain analysis. An explanation is proposed which takes into account the conduction overlap in the inductor pairs during steady-state inverter operation, which decreases the effective inductance of a Mapham inverter. A fault protection and current limit method is discussed which allows the Mapham inverter to operate into a short circuit, even when the inverter resonant circuit becomes overdamped.

Sundberg, Richard C.↗

NASA NTRS2020

Popcorning Failures in Polymer and MnO2 Tantalum Capacitors

Popcorning is a well-known effect in plastic encapsulated microcircuits (PEM) and it occurs in chip tantalum capacitors. The sensitivity of components to the presence of moisture during soldering is characterized by the moisture sensitivity level (MSL); however, contrary to PEMs, there is no standard procedure for establishing MSL for tantalum capacitors.The effect of absorbed moisture on soldering related degradation and failures in tantalum capacitors have not been studied properly yet, and there is no sufficient information regarding the difference in the sensitivity to soldering between polymer and MnO2 capacitors. In this work, 16 types of polymer and 9 types of MnO2 tantalum capacitors with different moisture content have been tested before and after reflow soldering. The level of moisture release during soldering has been estimated and thermo-mechanical analysis used to assess deformation of capacitorsduring soldering simulations. Results show that moisture uptake in similar parts is approximately two times greater in polymer than in MnO2 capacitors. Cracking of the case and degradation of parameters can occur in both types of parts, but MnO2 capacitors are much more likely to fail catastrophically with a short circuit and possible ignition during the first power-on cycle. This type of failure in MnO2 capacitors is lot-related, can occur even at derated voltages and relatively low levels of moisture sorption that corresponds to room conditions. Baking before soldering is an effective measure to prevent failures even in lots susceptible to popcorning damage.

Capacitor↗

NASA NTRS2011

Characteristics of Radio-Frequency Circuits Utilizing Ferroelectric Capacitors

Ferroelectric capacitors, most commonly used in memory circuits and variable components, were studied in simple analog radio-frequency circuits such as the RLC resonator and Colpitts oscillator. The goal was to characterize the RF circuits in terms of frequency of oscillation, gain, etc, using ferroelectric capacitors. Frequencies of oscillation of both circuits were measured and studied a more accurate resonant frequency can be obtained using the ferroelectric capacitors. Many experiments were conducted and data collected. A model to simulate the experimental results will be developed. Discrepancies in gain and frequency in these RF circuits when conventional capacitors are replaced with ferroelectric ones were studied. These results will enable circuit designers to anticipate the effects of using ferroelectric components in their radio- frequency applications.

Eskridge, Michael↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

NASA NTRS1985

Electrical characterization of plasma-grown oxides on gallium arsenide

Plasma-grown GaAs oxides and their interfaces have been characterized by measuring the electrical properties of metal-oxide-semiconductor capacitors and of Schottky junctions. The current transport mechanism in the oxide at high electrical field was found to be Frankel-Poole emission, with an electron trap center at 0.47 eV below the conduction band of the oxide. The interface-state density, evaluated from capacitance and conductance measurements, exhibits a U-shaped interface-state continuum extending over the entire band gap. Two discrete deep states with high concentration are superimposed on this continuum at 0.40 and 0.70 eV below the conduction band. The results obtained from measurements on Schottky junctions have excluded the possibility that these two deep states originate from plasma damage. Possible origins of these states are discussed in this paper.

Hshieh, F. I.↗

NASA NTRS2018

NEPP Evaluation of Automotive Grade Tantalum Chip Capacitors

Automotive grade tantalum (Ta) chip capacitors are available at lower cost with smaller physical size and higher volumetric efficiency compared to military/space grade capacitors. Designers of high reliability aerospace and military systems would like to take advantage of these attributes while maintaining the high standards for long-term reliable operation they are accustomed to when selecting military-qualified established reliability tantalum chip capacitors (e.g., MIL-PRF-55365). The objective for this evaluation was to assess the long-term performance of off-the-shelf automotive grade Ta chip capacitors (i.e., manufacturer self-qualified per AEC Q-200). Two (2) lots of case size D manganese dioxide (MnO2) cathode Ta chip capacitors from 1 manufacturer were evaluated. The evaluation consisted of construction analysis, basic electrical parameter characterization, extended long-term (2000 hours) life testing and some accelerated stress testing. Tests and acceptance criteria were based upon manufacturer datasheets and the Automotive Electronics Council's AEC Q-200 qualification specification for passive electronic components. As-received a few capacitors were marginally above the specified tolerance for capacitance and ESR. X-ray inspection found that the anodes for some devices may not be properly aligned within the molded encapsulation leaving less than 1 mil thickness of the encapsulation. This evaluation found that the long-term life performance of automotive grade Ta chip capacitors is generally within specification limits suggesting these capacitors may be suitable for some space applications.

Automotive↗

NASA NTRS2004

Electrochemical Properties of Organosilane Self Assembled Monolayers on Aluminum 2024

Self assembled monolayers are commonly used to modify surfaces. Within the last 15 years, self assembled monolayers have been investigated as a way to protect from corrosion[1,2] or biofouling.[3] In this study, self assembled monolayers of decitriethoxysilane (C10H21Si(OC2H5)3) and octadecyltriethoxysilane (C18H37Si(OC2H5)3) were formed on aluminum 2024-T3. The modified surfaces and bare Al 2024 were characterized by dynamic water contact angle measurements, x-ray photoelectron spectroscopy (XIPS) and infrared spectroscopy. Electrochemical impedance spectroscopy (EIS) in 0.5 M NaCl was used to characterize the monolayers and evaluate their corrosion protection properties. The advancing water contact angle and infrared measurements show that the mono layers form a surface where the hydrocarbon chains are packed and oriented away from the surface, consistent with what is found in similar systems. The contact angle hysteresis measured in these systems is relatively large, perhaps indicating that the hydrocarbon chains are not as well packed as monolayers formed on other substrates. The results of the EIS measurements were modeled using a Randle's circuit modified by changing the capacitor to a constant phase element. The constant phase element values were found to characterize the monolayer. The capacitance of the monolayer modified surface starts lower than the bare Al 2024, but approaches values similar to the bare Al 2024 within 24 hours as the monolayer is degraded. The n values found for bare Al 2024 quickly approach the value of a true capacitor and are greater than 0.9 within hours after the start of exposure. For the monolayer modified structure, n can stay lower than 0.9 for a longer period of time. In fact, n for the monolayer modified surfaces is different from the bare surface even after the capacitance values have converged. This indicates that the deviation from ideal capacitance is the most sensitive indicator of the presence of the monolayer.

Hintze, Paul E.↗

NASA NTRS1997

Ultra-Capacitor Energy Storage in a Large Hybrid Electric Bus

The power requirements for inner city transit buses are characterized by power peaks about an order of magnitude larger than the average power usage of the vehicle. For these vehicles, hybrid power trains can offer significantly improved fuel economy and exhaust emissions. A critical design challenge, however, has been developing the energy storage and power management system to respond to these rapid power variations. Most hybrid vehicles today use chemical energy storage batteries to supplement the power from the fuel burning generator unit. Chemical storage batteries however, present several difficulties in power management and control. These difficulties include (1) inadequate life, (2) limited current delivery as well as absorption during regenerative braking, (3) inaccurate measurement of state of charge, and (4) stored energy safety issues. Recent advances in ultra-capacitor technology create an opportunity to address these concerns. The NASA Lewis Research Center, in cooperation with industry and academia, has developed an advanced hybrid electric transit bus using ultra-capacitors as the primary energy storage system. At over 15,000-kg gross weight, this is the largest vehicle of its kind ever built using this advanced energy storage technology. Results of analyses show that the vehicle will match the performance of an equivalent conventionally powered vehicle over typical inner city drive cycles. This paper describes the overall power system architecture, the evolution of the control strategy, and analysis of power flow and vehicle performance.

Viterna, L. A.↗

NASA NTRS1995

Operational characteristics of a 200 C LC parallel resonant circuit

Research efforts are currently underway at the NASA Lewis Research Center to design and demonstrate an inverter capable of operating with a baseplate temperature of 200 C. In support of this project, various electrical components including capacitors, inductors, transformers, cables, and semiconductor switches are being developed or evaluated for integration into the inverter. In this work, a parallel LC resonant circuit was constructed and evaluated under simultaneous electrical and thermal stressing. The tests were performed in the temperature range of 25 to 200 C with an applied voltage of up to 90 V, 20 kHz. The individual components were comprised of high temperature film capacitors and powder core inductors developed in-house. The circuit was characterized in terms of the component currents and case temperatures as well as frequency of resonance as a function of applied bias and temperature. The results obtained, which have indicated good functional stability up to 200 C, are presented and discussed.

Baumann, Eric D.↗

NASA NTRS2014

Evaluation of Commercial Automotive-Grade BME Capacitors

Three Ni-BaTiO3 ceramic capacitor lots with the same specification (chip size, capacitance, and rated voltage) and the same reliability level, made by three different manufacturers, were degraded using highly accelerated life stress testing (HALST) with the same temperature and applied voltage conditions. The reliability, as characterized by mean time to failure (MTTF), differed by more than one order of magnitude among the capacitor lots. A theoretical model based on the existence of depletion layers at grain boundaries and the entrapment of oxygen vacancies has been proposed to explain the MTTF difference among these BME capacitors. It is the conclusion of this model that reliability will not be improved simply by increasing the insulation resistance of a BME capacitor. Indeed, Ni-BaTiO3 ceramic capacitors with a smaller degradation rate constant K will always give rise to a longer reliability life

capacitor↗

NASA NTRS2014

Evaluation of Commercial Automotive-Grade BME Capacitors

reliability↗

NASA NTRS1981

Accelerated life testing and reliability of high K multilayer ceramic capacitors

The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

Minford, W. J.↗

NASA NTRS2004

Measurement of Thin Film Integrated Passive Devices on SiC through 500 C

Wireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.

Schwartz, Zachary D.↗

NASA NTRS2002

Preliminary Evaluation of Polyarylate Dielectric Films for Cryogenic Applications

Polymeric materials are used extensively on spacecraft and satellites in electrical power and distribution systems, as thermal blankets and optical surface coatings, as well as mechanical support structures. The reliability of these systems when exposed to the harsh environment of space is very critical to the success of the mission and the safety of the crew in manned-flight ventures. In this work, polyarylate films were evaluated for potential use as capacitor dielectrics and wiring insulation for cryogenic applications. Two grades of the film were characterized in terms of their electrical and mechanical properties before and after exposure to liquid nitrogen (-196 C). The electrical characterization consisted of capacitance and dielectric loss measure Cents in the frequency range of 50 Hz to 100 kHz, and volume and surface resistivities. The mechanical measurements performed included changes in tensile (Young's modulus, elongation-at-break, and tensile strength) and structural properties (dimensional change, weight, and surface morphology). The preliminary results, which indicate good stability of the polymer after exposure to liquid nitrogen, are presented and discussed.

Patterson, Richard L.↗

NASA NTRSDate not supplied

Parallel-Plate Capacitor TiN KIDs for Infrared Astronomy

The Balloon Experiment for Galactic INfrared Science (BEGINS) is a concept for a sub-orbital observatory that will characterize dust in the vicinity of high-mass stars. It requires detectors with NEPs from 2x10 -16 W Hz -1/2 to 6x10 -17 W Hz -1/2 from 25-250 microns, respectively. The mission’s sensitivity requirements will be met by utilizing arrays of 1,840 lens-coupled, lumped-element kinetic inductance detectors (KIDs) operating at 300 mK. Each KID will consist of a titanium nitride (TiN) parallel strip absorbing inductive section and parallel plate capacitor deposited on a Silicon (Si) substrate. The parallel plate capacitor geometry allows for reduction of the pixel spacing. We present the optical performance of a prototype BEGINS KID array at 25 microns when coupled to Fresnel zone plate lenses. We present sensitivity, optical efficiency and quasiparticle lifetime measurements taken in a cryogenic test bed with a cryogenic blackbody.

Joanna Perido↗

NASA NTRSDate not supplied

Parallel plate capacitor TiN KID array development for the Balloon Experiment for Galactic Infrared Science

The Balloon Experiment for Galactic Infrared Science (BEGINS) will map dust spectral energy distributions (SEDs) between 25 and 250 microns near high-mass star regions, characterizing the radiation fields and dust properties of a variety of stellar environments. To accomplish these goals, BEGINS will be outfitted with roughly 1,800 titanium nitride (TiN), superconducting kinetic inductance detectors (KIDs). A parallel plate capacitor KID design is used to achieve high pixel density arrays. A cryogenic, silicon-based, metal-mesh linear variable filter will define detector band passes across the KID array. Optical coupling to the filters and telescope will be accomplished using silicon microlenses. Here we present laboratory characterization of prototype BEGINS detector arrays, describe future array development plans, and describe the testbed used to characterize the arrays.

Nicholas F. Cothard↗

NASA NTRS1968

Characterization of silicon dioxide for a capacitance-type meteoroid penetration detector

Fabrication and testing of large area metal oxide silicon capacitors for micrometeoroid counting in space

Canady, K. S.↗

NASA NTRS1989

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗