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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Turbulent boundary layer separation over a rearward facing ramp and its control through mechanical excitation

A vane oscillating about a fixed point at the inlet to a two-dimensional 20 degree rearward facing ramp has proven effective in delaying the separation of a turbulent boundary layer. Measurements of the ramp surface static pressure coefficient obtained under the condition of vane oscillation and constant inlet velocity revealed that two different effects occurred with surface distance along the ramp. In the vicinity of the oscillating vane, the pressure coefficients varied as a negative function of the vane's trailing edge rms velocity; the independent variable on which the rms velocity depends are the vane's oscillation frequency and its displacement amplitude. From a point downstream of the vane to the exit of the ramp; however, the pressure coefficient varied as a more complex function of the two independent variables. That is, it was found to vary as a function of the vane's oscillation frequency throughout the entire range of frequencies covered during the test, but over only a limited range of the trailing edge displacement amplitudes covered. More specifically, the value of the pressure coefficient was independent of increases in the vane's displacement amplitude above approximately 35 inner wall units of the boundary layer. Below this specific amplitude it varied as a function of the vane's trailing edge rms velocity. This height is close to the upper limit of the buffer layer. A parametric study was made to determine the variation of the maximum static pressure recovery as a function of the vane's oscillation frequency, for several ramp inlet velocities and a constant displacement amplitude of the vane's trailing edge. The results indicate that the phenomenon producing the optimum delay of separation may be Strouhal number dependent. Corona anemometer measurements obtained in the inner wall regions of the boundary layer for the excited case reveal a large range of unsteadiness in the local velocities. These measurements imply the existence of inflections in the profiles, which provide a mechanism for resulting inviscid flow instabilities to produce turbulence in the near wall region, thereby delaying separation of the boundary layer.

Mckinzie, Daniel J., Jr.↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
NASA NTRS2023

An Evaluation of A Physics-Based Firn Model and A Semi-Empirical Firn Model Across the Greenland Ice Sheet (1980–2020)

The Greenland Ice Sheet's (GrIS) firn layer buffers the ice sheet's contribution to sea level rise by storing meltwater in its pore space. However, available pore space and meltwater retention capability is lost due to ablation of the firn layer and refreezing of meltwater as near-surface ice slabs in the firn. Understanding how firn properties respond to climate is important for constraining the GrIS's future contribution to sea level rise in a warming climate. Observations of firn density provide detailed information about firn properties, but they are spatially and temporally limited. Here we use two firn models, the physics-based SNOWPACK model and the Community Firn Model configured with a semi-empirical densification equation (CFM-GSFC), to quantify firn properties across the GrIS from 1980 through 2020. We use an identical forcing (Modern-Era Retrospective Analysis for Research and Applications, version 2 (MERRA-2) atmospheric reanalysis) for SNOWPACK and the CFM-GSFC in order to isolate firn model differences. To evaluate the models, we compare simulated firn properties, including firn air content (FAC), to measurements from the Surface Mass Balance and Snow on Sea Ice Working Group (SUMup) dataset of snow and firn density. Both models perform well (mean absolute percentage errors of 14 % in SNOWPACK and 16 % in the CFM-GSFC), though their performance is hindered by the spatial resolution of the atmospheric forcing. In the ice-sheet-wide simulations, the 1980–1995 average spatially integrated FAC (i.e., air volume in the firn) for the upper 100 m is 34 645 km 3 from SNOWPACK and 28 581 km 3 from the CFM-GSFC. The discrepancy in the magnitude of the modeled FAC stems from differences in densification with depth and variations in the sensitivity of the models to atmospheric forcing. In more recent years (2005–2020), both models simulate substantial depletion of pore space. During this period, the spatially integrated FAC across the entire GrIS decreases by 3.2 % (−66.6 km 3 yr −1 ) in SNOWPACK and 1.5 % (−17.4 km 3 yr −1 ) in the CFM-GSFC. These differing magnitudes demonstrate how model differences propagate throughout the FAC record. Over the full modeled record (1980–2020), SNOWPACK simulates a loss of pore space equivalent to 3 mm of sea level rise buffering, while the CFM-GSFC simulates a loss of 1 mm. The greatest depletion in FAC is along the margins and especially along the western margin where observations and models show the formation of near-surface, low-permeability ice slabs that may inhibit meltwater storage.

Megan Thompson-Munson↗
NASA NTRS2005

Chemically Deposited Thin-Film Solar Cell Materials

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Raffaelle, R.↗
NASA NTRS2010

Boundary Layers, Transitions and Separation

Effects of roughness in boundary layers have to be addressed. Until adverse pressure gradient effects are understood, roughness will not significantly drive design. Mechanisms responsible for separation not understood. Effects on Zero Pressure Gradient boundary layers (shear stress). Effects on separation in pressure gradient (prediction of separation). Effect on scalar transport (heat transfer) not understood. Model for skin friction needed in simulations - first grid point likely to be in buffer layer. Definition of roughness important for useful experiments. A lot of validation experiments will be needed. How to get to ks for roughness of engineering interest? - depends on wavelength height, etc. for engineering interest? Re-discovering the wheel should be avoided: existing knowledge (theoretical and experimental) should find its way into the engineering models. It is a task of the industry to filter out the existing information in the literature for results relevant to its application, being external or internal.

Source record↗
NASA NTRS1985

Depletion layer recombination effects on the radiation damage hardness of gallium arsenide cells

The significant effect of junction depletion layer recombination on the efficiency of windowed GaAs cells was demonstrated. The effect becomes more pronounced as radiation damage occurs. The depletion is considered for 1 MeV electron fluences up to 10 to the 16th power e/sq m. The cell modeling separates damage in emitter and base or buffer layers using different damage coefficients is reported. The lower coefficient for the emitter predicts less loss of performance at fluences greater than 10 to the 15th power e/sq cm. A method for obtaining information on junction recombination effects as damage proceeds is described; this enables a more complete diagnosis of damage to be made.

Garlick, G. F. J.↗
NASA NTRS2007

Toward a III-V Multijunction Space Cell Technology on Si

High efficiency compound semiconductor solar cells grown on Si substrates are of growing interest in the photovoltaics community for both terrestrial and space applications. As a potential substrate for III-V compound photovoltaics, Si has many advantages over traditional Ge and GaAs substrates that include higher thermal conductivity, lower weight, lower material costs, and the potential to leverage the extensive manufacturing base of the Si industry. Such a technology that would retain high solar conversion efficiency at reduced weight and cost would result in space solar cells that simultaneously possess high specific power (W/kg) and high power density (W/m2). For terrestrial solar cells this would result in high efficiency III-V concentrators with improved thermal conductivity, reduced cost, and via the use of SiGe graded interlayers as active component layers the possibility of integrating low bandgap sub-cells that could provide for extremely high conversion efficiency.1 In addition to photovoltaics, there has been an historical interest in III-V/Si integration to provide optical interconnects in Si electronics, which has become of even greater relevance recently due to impending bottlenecks in CMOS based circuitry. As a result, numerous strategies to integrate GaAs with Si have been explored with the primary issue being the approx.4% lattice mismatch between GaAs and Si. Among these efforts, relaxed, compositionally-graded SiGe buffer layers where the substrate lattice constant is effectively tuned from Si to that of Ge so that a close lattice match to subsequent GaAs overlayers have shown great promise. With this approach, threading dislocation densities (TDDs) of approx.1 x 10(exp 6)/sq cm have been uniformly achieved in relaxed Ge layers on Si,5 leading to GaAs on Si with minority carrier lifetimes greater than 10 ns,6 GaAs single junction solar cells on Si with efficiencies greater than 18%,7 InGaAs CW laser diodes on Si,8 and room temperature GaInP red laser diodes on Si.9 Here we report on the first high performance dual junction GaInP/GaAs solar cells grown on Si using this promising SiGe engineered substrate approach.

Ringel, S. A.↗
NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗
NASA NTRS1995

The Physics of Turbulence in the Boundary Layer

The geometry of the velocity field in a numerically simulated incompressible turbulent boundary layer over a flat plate at Re theta=670 has been studied using the invariants of the velocity gradient tensor. These invariants are computed at every grid point in the flow and used to form the discriminant. Of primary interest are those regions in the flow where the discriminant is positive; regions where, according to the characteristic equation, the eigenvalues of the velocity gradient tensor are complex. An observer moving with a frame of reference which is attached to a fluid particle lying within such a region would see a local flow pattern of the type stable-focus-stretching or unstable-focus-compressing. When the flow is visualized this way, continuous, connected, large-scale structures are revealed that extend from the point just below the buffer layer out to the beginning of the wake region. These structures are aligned with the mean shear close to the wall and arch in the cross-stream direction away from the wall. In some cases the structures observed are very similar to to the hairpin eddy vision of boundary layer structure proposed by Theodorsen. That the structure of the flow is revealed more effectively by the discriminant rather than by the vorticity is important and adds support to recent observations of the discriminant in a channel flow simulation. Of particular importance is the fact that the procedure does not require the use of an arbitrary threshold in the discriminant. Further analysis using computer flow visualization shows a high degree of spatial correlation between regions of positive discriminant, extreme negative pressure fluctuations and large instantaneous values of Reynolds shear stress.

Kline, Stephen↗
NASA NTRS1972

Nuclear light bulb propellant heating simulation using a tungsten/argon aerosol and radiation from a dc arc surrounded by a segmented mirror cavity

Experiments were conducted to simulate radiant heating of the propellant stream of a nuclear light bulb engine to obtain high bulk exit temperatures in the flowing simulated propellant stream by absorption of large fractions of the incident thermal radiation. A high-power, vortex-stabilized dc arc within an uncooled fused silica tube was used as the radiant energy source. It was surrounded by a mirror system to increase the radiation incident on the simulated propellant. The 12.7-cm-long by 2.3-cm-wide, diverging-duct test section had a transparent front wall and a reflecting rear wall. The central stream of seeded gas, a tungsten-particle/argon aerosol, had unseeded argon buffer layers on both sides to prevent coating of the duct walls. Arc operating times were approximately 0.5 sec with power levels up to 780 kW. Bulk exit temperatures were measured using a calorimeter downstream of the duct. The maximum simulated propellant bulk exit temperature obtained was 4515 K, compared with 3860 K in previous tests, 3300 to 3700 K expected in in-reactor tests in the Nuclear Furnace, and 6660 K in the reference nuclear light bulb engine. The maximum temperature in these tests was limited primarily by the amount of radiation incident on the test section (determined by the arc operating characteristics and the effectiveness of the mirror cavity).

Klein, J. F.↗
NASA NTRS1976

A simulation for gravity fine structure recovery from low-low GRAVSAT SST data

Covariance error analysis techniques were applied to investigate estimation strategies for the low-low SST mission for accurate local recovery of gravitational fine structure, considering the aliasing effects of unsolved for parameters. A 5 degree by 5 degree surface density block representation of the high order geopotential was utilized with the drag-free low-low GRAVSAT configuration in a circular polar orbit at 250 km altitude. Recovery of local sets of density blocks from long data arcs was found not to be feasible due to strong aliasing effects. The error analysis for the recovery of local sets of density blocks using independent short data arcs demonstrated that the estimation strategy of simultaneously estimating a local set of blocks covered by data and two "buffer layers" of blocks not covered by data greatly reduced aliasing errors.

Estes, R. H.↗
NASA NTRS1979

Thermal analysis of turbulent flow of a supercritical fluid

The influence of the large variation of thermodynamics and transport properties near the pseudocritical temperature on the heat transfer coefficient of supercritical fluid in turbulent flow was studied. The formation of the characteristics peak in the heat transfer coefficient vs. bulk temperature curve is described, and the necessity of the fluid element at pseudocritical temperature located in the buffer layer is discussed.

Yamane, E.↗
NASA NTRS1979

Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices

Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

Ladany, I.↗
NASA NTRS1985

Making Cubic Silicon Carbide Semiconductors

Thin buffer layer of SiC minimizes effects of lattice mismatch. Approach consists of growing single-crystal layer of cubic SiC on single-crystal silicon (Si) wafer by chemical-vapor deposition (CVD). Process developed for production of large-area single-crystal wafers of cubic silicon carbide (SiC) for semiconductor devices; also used to make devices themselves. Applications include electronics for high temperature (up to 900 C) and electronics for very high frequencies.

Powell, J.↗
NASA NTRS1983

Communications and logic systems at millimeter wave frequencies, summary

During the contract period an AsCl3 epitaxial system used to provide buffer layers for FET structures was constructed. A submicron lithographic processes using deep U.V. techniques was developed and, employing these techniques, a working .5 micron gate device was produced. In addition, the development of submicron mixer diodes continued. The gettering of substrates of a technique to improve the mobility of ionimplantated layers was investigated. The result of this experiment showed a correlation between improved hall mobilities and gettered substrates. Finally, several theoretical studies are reported.

Source record↗
NASA NTRS1987

Helicity fluctuations in incompressible turbulent flows

Results from direct numerical simulations of several homogeneous flows and fully developed turbulent channel flow indicate that the probability distribution function (pdf) of relative helicity density exhibits at most a 20 percent deviation from a flat distribution. Isotropic flows exhibit a slight helical nature but the presence of mean strain in homogeneous turbulence suppresses helical behavior. All the homogeneous turbulent flows studied show no correlation between relative helicity density and the dissipation of turbulent kinetic energy. The channel flow simulations indicate that, except for low-dissipation regions near the outer edge of the buffer layer, there is no tendency for the flow to be helical. The strong peaks in the relative helicity density pdf and the association of these peaks with regions of low dissipation found in previous simulations by Pelz et al.(1985) are not observed.

Rogers, Michael M.↗
NASA NTRS1987

Stochastic estimation of organized structures in turbulent channel flow

Linear stochastic estimation is used to approximate the conditional vector fields associated with high Reynolds stress producing events in numerically simulated turbulent channel flow. Joint probability density distributions of u-v are presented for y(+) between 1.35 and 180, and at each position the u-v values that make the greatest contributions to the average uv3 are used to define conditional ejection- and sweep-type events. In the y-z plane the conditional fields appear to be pairs of counter-rotating vortices. When the conditional event defined by the weighted probability density function is specified at a point close to the wall, the spacing and size of these eddies are consistent with the accepted wall streak spacing. As this point moves outwards, the eddy size increases significantly. An abrupt change in the flow angle occurs in the buffer layer and may indicate transition from streamwise oriented wall layer structures to hairpin vortices characterizing the outer layer.

Moin, P.↗
NASA NTRS1990

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗