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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Wall conditioning effects of boron powder injection in KSTAR with a tungsten divertor

Boron powder dropped into KSTAR plasmas decreased the radiated power, core electron density, and Z eff , indicating that the ablated and redeposited boron powder helped to condition the plasma-facing surfaces. Visible line emission of oxygen and tungsten were also reduced by 50% (80%) with boron injection into H-mode (L-mode) discharges that used the new KSTAR tungsten monoblock lower divertor. Dynamic particle balance analysis found a negligible difference in the inferred wall pumping rate during the steady portion of the discharges. It is inferred that the observed conditioning effects were principally caused by a reduction in intrinsic impurities as opposed to a reduction in wall recycling. These results are in qualitative agreement with low-Z injected powder experiments across many fusion devices, confirming the utility of low-Z powder injection as a real-time wall conditioning tool.

boron powder injection↗
DOE OSTI2025

Defect Engineering in Large‐Scale CVD‐Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, it is demonstrated that formation of negative boron vacancy defects, V B − , in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. Different defect types are identified by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons and emitting at 800 nm) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (N B V N ) and reveal the presence of additional “dark” paramagnetic defects that influence spin-lattice relaxation time (T 1 ) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

CVD↗
DOE OSTI2025

Fabrication and characterization of boron-terminated tetravacancies in monolayer hBN using STEM, EELS and electron ptychography

Tetravacancies in monolayer hexagonal boron nitride (hBN) with consistent edge termination (boron or nitrogen) form triangular nanopores with electrostatic potentials that can be leveraged for applications such as selective ion transport and neuromorphic computing. In order to quantitatively predict the properties of these structures, an atomic-level understanding of their local electronic and chemical environments is required. Moreover, robust methods for their precision manufacture are needed. Here we use electron irradiation in a scanning transmission electron microscope (STEM) at a high dose rate to drive the formation of boron-terminated tetravacancies in monolayer hBN. Characterization of the defects is achieved using aberration-corrected STEM, monochromated electron energy-loss spectroscopy (EELS), and electron ptychography. Z-contrast in STEM and chemical fingerprinting by core-loss EELS enable identification of the edge terminations, while electron ptychography gives insight into structural relaxation of the tetravacancies and provides evidence of enhanced electron density around the defect perimeters indicative of bonding effects.

2D hBN↗
DOE OSTI2025

Selective semihydrogenation of acetylene in ethylene using defect-rich boron nitride catalyst from flux reconstruction

Efficient removal of trace acetylene from ethylene streams is essential for producing polymer-grade ethylene, yet achieving highly selective semihydrogenation without over-hydrogenation remains a long-standing challenge. A key barrier is the lack of a simple, low-cost catalyst that can activate hydrogen effectively while preventing ethylene from reacting further. Here we show that defect-rich boron nitride, prepared through a straightforward flux reconstruction method, serves as a highly selective and metal-free catalyst for acetylene semihydrogenation. The catalyst contains abundant open boron and nitrogen sites that enable efficient hydrogen activation and rapid release of ethylene, thereby avoiding over-hydrogenation. Experiments combined with isotope labeling and theoretical analysis reveal that these defects lower the energy barrier for hydrogen activation while accelerating product desorption. Our findings demonstrate a scalable strategy for defect engineering in boron nitride and highlight its potential as a robust, sustainable alternative to metal-based catalysts in industrial ethylene purification.

Wang, Tao [Oak Ridge National Laboratory (ORNL), O↗
DOE OSTI2025

Deterministic fabrication of highly reproducible monochromatic quantum emitters in hexagonal boron nitride

Quantum emitters in hexagonal boron nitride are important room temperature single-photon sources. However, conventional fabrication methods yield quantum emitters with dispersed and inconsistent spectral profiles, limiting their potential for practical quantum applications, which demand reproducible high quality single-photon sources. Here, we report the deterministic creation of highly reproducible monochromatic quantum emitters by applying carbon-ion implantation on freestanding hexagonal boron nitride flakes, while a carbon mask with suitable thickness was adapted to optimize the implantation results. Quantum emitters fabricated using this approach exhibited thermally limited monochromaticity, with an emission center wavelength of 590.7 ± 2.7 nm, a narrow full width at half maximum of 7.1 ± 1.7 nm, an emission rate of 1 MHz without optical engineering, and exceptional stability under ambient conditions. Density functional theory calculations and scanning transmission electron microscopy suggest that these emitters are comprised of boron centered carbon tetramers. This method provides a reliable single-photon source for optical quantum computing and potential future industry-scale applications.

Hua, Muchuan [Argonne National Laboratory (ANL), A↗
DOE OSTI2025

Plasma modification through boron particulate injection in the full tungsten environment of WEST

Recent experiments have confirmed the compatibility of extended boron particulate injections with high performance plasma discharges in the full tungsten (W) environment of WEST. Utilizing an impurity powder dropper (IPD) equipped with boron (B) powders a series of extended experimental programs providing controlled injections have quantified plasma response to varying levels of injection rate and total injection quantity. Calibration of injection quantities confirmed through post-situ testing of the IPD and cross-correlated with both high-speed camera illumination and spectroscopic measurement have allowed for the first time a fine scale determination of the effects of powder introduction on plasma performance. Plasma enhancement, consistent with turbulence reduction through profile modification, has been observed with sustained increases in the stored energy (WMHD), by 18%, electron temperature (T e ) by 35%, and neutron rate (N n ) by up to 200%, all of which scale positively with increasing powder injection rates. These injections have also resulted in both prompt and extended reductions in native impurity content, decreases in post injection radiated power, and strong decreases in divertor deuterium signatures signifying a reduction in recycling suggesting enhanced boron layer formation which provides a reduction of source terms and leads to enhanced gettering of main ion and impurity sources.

Lunsford, R. [Princeton Plasma Physics Laboratory ↗
DOE OSTI2025

Kinetic and Mechanistic Understanding of Boron-Containing Catalysts for the Production of Light Olefins through Selective Oxidation

In recent years, an abundance of natural gas obtained from shale deposits has created opportunities for the US chemical industry to establish new and more efficient processes for the production of chemical intermediates and polymers. For example, the replacement of petroleum-derived naphtha as a to shale-derived ethane as feedstocks has made the production of ethylene/polyethylene less costly. However, this shift in feedstock has led to lower production of propylene from steam crackers, and new “on-purpose” light olefin production technologies have been implemented to bridge the gap between propylene supply and demand. The most important of these processes is direct propane dehydrogenation (PDH), but catalyst deactivation and high temperatures lead to high capital and operating costs. Oxidative dehydrogenation of propane (ODHP) is an efficient alternative to PDH, but high selectivity to CO2 from previous metal oxide catalyst prevents implementation. Hexagonal boron nitride (hBN) and other boron-containing materials have been recently developed as highly selective catalysts for both ODHP and oxidative cracking, surpassing previous systems. Much is still unknown in regard to the mechanism and the dynamic surface changes that occur under reaction conditions. This research project aims to combine in situ/operando spectroscopic investigation and kinetic studies to elucidate the interplay between the proposed gas-phase mechanism and the surface structures on the working catalyst. These insights will be leveraged to create a framework for optimizing reaction conditions and material synthesis for the next generation of boron-containing selective oxidation catalysts.

02 PETROLEUM↗
DOE OSTI2025

Decoherence of V B spin defects in monoisotopic hexagonal boron nitride

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (V− B ). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using crossrelaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of V− B spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

Haykal, A.↗
DOE OSTI2026

Landau–Zener Transition Enhanced Quantum Sensing in Spin Defects of Hexagonal Boron Nitride

Negatively charged boron vacancies (V $^{–}_{B}$ ) in hexagonal boron nitride (hBN) comprise a promising quantum sensing platform, optically addressable at room temperature and transferable onto samples. However, broad hyperfine-split spin transitions of the ensemble pose challenges for quantum sensing with conventional resonant excitation due to limited spectral coverage. While V $^{–}_{B}$ in isotopically enriched hBN using 10 B and 15 N isotopes (h 10 B 15 N) exhibits sharper spectral features, significant inhomogeneous broadening persists. We show that, implemented via frequency modulation on an FPGA, a frequency-ramped microwave pulse achieves around 4-fold greater |0⟩→|−1⟩ spin-state population transfer and thus contrast than resonant microwave excitation and thus 16-fold shorter measurement time for spin relaxation-based quantum sensing. Quantum dynamics simulations reveal that an effective two-state Landau–Zener model captures the complex relationship between population inversion and pulse length with relaxations incorporated. Our approach is robust and valuable for quantum relaxometry with spin defects in hBN, especially in noisy environments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Off-Equilibrium Reactivity of Boron-Enriched Metal Diboride Surfaces in Electroreduction Conditions

Boron-based materials, featuring B-dependent reactivity and diverse phases, are emerging as promising catalyst systems. However, the catalytic mechanism on many borides remains poorly understood due to complex surface reconstructions under reaction conditions. Here, we investigate the MoB 2 surface in conditions of hydrogen evolution reaction in acidic media, using grand canonical global optimization, grand canonical density functional theory, ab initio molecular dynamics, free energy surface sampling, and an analytical model for electrochemical barrier evaluation. We propose a boron-enrichment strategy to tune the surface reactivity of the hexagonal face of MoB 2 . We reveal the dynamic nature of the B-enriched surface under H coverage and kinetic trapping of the system in the metastable regime with an extensive examination of the deactivation pathways. The metastable center B site on B-enriched surfaces, featuring buckled-up configuration and a usual relaxation effect, is found to be highly active toward HER via the Volmer–Heyrovsky mechanism. In conclusion, this work demonstrates how off-equilibrium behaviors can arise from the interplay between adsorbate coverage and surface reconstruction on a seemingly simple surface, and we present a theoretical framework and computational workflows to address these behaviors, along with other realistic complexities, in kinetics simulations.

Adsorption↗
DOE OSTI2024

Fundamental optical transitions in hexagonal boron nitride epilayers

Fundamental optical transitions in hexagonal boron nitride (h-BN) epilayers grown on sapphire by metal–organic chemical vapor deposition (MOCVD) using triethylboron as the boron precursor have been probed by photoluminescence (PL) emission spectroscopy. The low temperature (10 K) PL spectrum exhibits two groups of emission lines. The first group includes the direct observation of the free exciton and impurity bound exciton (BX) transitions and phonon replicas of the BX transition, whereas the second group is attributed to the direct observation of the band-to-band transition and its associated phonon replicas. The observations of zero-phonon lines of the band-to-band and exciton transitions, which are supposedly forbidden or “dark” in perfect h-BN crystals, result from a relaxed requirement of momentum conservation due to symmetry-breaking in the presence of high concentrations of impurities/defects and strain, which in turn provided more deterministic values of the energy bandgap (E g ), exciton binding energy (E x ), and binding energy of impurity bound excitons (E BX ) in h-BN epilayers. Excitonic parameters of h-BN epilayers grown by MOCVD, carbon-free chemical vapor deposition, and high purity h-BN bulk materials are compared and discussed. The present results, together with available information in the literature, represent a significant improvement in the understanding of the fundamental optical properties and excitonic parameters of h-BN ultrawide bandgap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Data-Driven Approach for Controlled Icosahedral Boron- Rich Compound Growth

This final technical report summarizes the research accomplishments and research highlights at the end of the funding period. This project aimed to leverage existing and new computational data produced from first-principles and molecular dynamics simulations to understand the thermodynamic, mechanical, and electronic properties of icosahedral boron compounds. The goal is to achieve targeted material properties by controlling the synthesis routes of these boron-rich compounds.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Metalloborophenes: Structural Diversity and Emerging Properties of Metal–Boron Two‐Dimensional Frameworks

Metalloborophenes, an emerging subclass of 2D materials, have attracted growing attention owing to their exceptional structural diversity and highly tunable electronic and magnetic properties. Constructed from vacancy‐rich borophene frameworks stabilized by electron donation from incorporated metal atoms, metalloborophenes merge the chemical versatility of boron with the functional richness of metal dopants. The first experimental realization of Cu–borophene nanoribbons in 2024 marked a pivotal advance, confirming long‐standing theoretical predictions and revitalizing interest in this new frontier of boron‐based 2D chemistry. Despite this progress, most studies to date remain conceptual and theoretical, constrained by challenges in scalable synthesis, dopant precision, and substrate control. Computational investigations have revealed a broad landscape of stable metalloborophene structures, exhibiting metallic, semiconducting, and magnetic behavior across diverse dopant families, including alkali, alkaline‐earth, transition, and lanthanide elements. These tunable characteristics open promising avenues for applications in spintronics, catalysis, and hydrogen storage. This review provides a comprehensive overview of metalloborophenes, emphasizing the interplay between structure, stability, and functionality, and outlining future directions toward bridging predictive modeling with experimental realization of this rapidly evolving class of 2D materials.

2D materials↗
DOE OSTI2026

Boron-Based Neutron Scintillator Screen Characterization with X-Rays and Neutrons

Recent work on boron-based neutron scintillator screens suggests these screens can offer superior performance when compared to commonly used screens. Borated neutron scintillator screens perform well in terms of light output (5-6 times greater than a standard Gadox screen) and detection effi-ciency (larger than standard LiF+ZnS screens). However, previously manu-factured boron-based screens have exhibited non-uniform surface coating and a poor mixture between phosphor and converter particles. The objective of this work was to evaluate newly fabricated scintillator screens to deter-mine if enhanced fabrication methods produced a more homogeneous distribution between neutron converter and scintillation phosphor particles. Uniformity of scintillator material deposition was also inspected. This new iteration of screens appeared more uniform than previous generations with the new coating method improving surface chemistry and scintillator material homogeneity. Additionally, a new methodology for screen characterization, involving the correlation of a neutron image taken with a borated scintillator screen to X-ray computed tomography of that same screen, was demonstrated to elucidate a relationship between scintillator screen thickness and relative light output of the screen under neutron exposure. This method suggested that the ideal thickness of scintillator material was ~150 µm to maximize light output of the screen.

36 - MATERIALS SCIENCE↗
DOE OSTI2025

Effects of substrate bias and tilt on magnetron sputtered boron carbide films

Maintaining high density and good mechanical properties at oblique angles for magnetron sputtered amorphous boron carbide films remains a challenge. In this study, we investigate the effect of the substrate bias on density, residual stress, mechanical properties, and morphology of boron carbide films deposited via direct current magnetron sputtering with a full-face erosion magnetron source in a mixed Ar-Ne plasma. Results show that films deposited at oblique substrate tilt angles on substrates biased at -50 V possess significantly lower oxygen content, superior mechanical properties, and higher density compared to their electrically grounded counterparts. In conclusion, these enhancements observed at oblique angles, while promising, come at the cost of larger residual compressive stress and higher Ne incorporation in films.

Materials science↗
DOE OSTI2024

One-Pot Coating of Ceramic Powders by Exfoliated Boron Nitride Layers with a Dense CO 2 Medium and Ultrasound-Aided Mixing

The coating or doping of substrates by two-dimensional materials to impart superior functional properties (such as improved thermal conductivity, bacterial resistance, reduced friction) is receiving increased attention. Environmentally benign, rapid and scalable coating techniques are desirable for this purpose. Here, we report a novel process for coating alumina, silicon carbide and boron carbide substrates with hexagonal boron nitride (h-BN) layers. The process consists of two sequential steps. First, h-BN layers are exfoliated from bulk h-BN in supercritical carbon dioxide (scCO 2 ) using ultrasound-aided mixing. This step is followed by self-assembly (i.e., coating) of the exfoliated h-BN on the substrates in liquid CO 2 also aided by ultrasound. The liquid CO 2 state is achieved by simply lowering the pressure and temperature of the first step below the critical point of CO 2 (P c = 72.8 atm; T c = 31.1 °C). Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) micrographs clearly reveal the exfoliation of h-BN under scCO 2 conditions as well as the h-BN assembly on various substrates under liquid CO 2 conditions. X-ray diffraction patterns confirm the structural integrity of the coated h-BN layers. It was also confirmed that without a transition to the liquid CO 2 phase following exfoliation in scCO 2 , there was negligible coating of h-BN on the substrates. Researchers in the field could consider this benign process to rapidly coat or dope materials with h-BN and other 2D materials to impart improved functional properties in myriad applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Resistance of Boron Nitride Nanotubes to Radiation-Induced Oxidation

We present unprecedented results on the damage thresholds and pathways for boron nitride nanotubes (BNNT) under the influence of energetic electrons in an oxidative gas environment, using an environmental aberration-corrected electron microscope over a range of oxygen pressures. We observe a damage cascade process that resists damage until a higher electron dose, compared with carbon nanotubes, initiating at defect-free BNNT sidewalls and proceeding through the conversion from crystalline nanotubes to amorphous boron nitride (BN), resisting oxidation throughout. We compare with prior results on the oxidation of carbon nanotubes and present a model that attributes the onset of damage in both cases to a physisorbed oxygen layer that reduces the threshold for damage onset. Surprisingly, increased temperatures offer protection against damage, as do electron dose rates that significantly exceed the oxygen dose rates, and our model attributes both effects to a physisorbed oxygen population.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

First-Principles Study of Molecular Hydrogen Activation by Defects in Boron Nitride

Here, we used density functional theory simulations in combination with ab initio thermodynamics to determine the H 2 partial pressure (p H2 )-dependent energetics associated with H 2 activation and recovery at various defect sites in hexagonal boron nitride (h-BN). We found that some defects are very reactive with hydrogen, thereby definitely trapping hydrogen in defective h-BN. However, depending on hydrogen partial pressure, less reactive defect sites can be populated. Because of the lower binding capability of these sites, they would allow hydrogen to be recycled and recovered. For small defect sizes, we found that hydrogen preferentially binds to nitrogen sites by forming N–H bonds, and if no N sites are available then boron sites would be the next to bind hydrogen. Hydrogen dissociation via frustrated Lewis pair is found to be more favorable than forming only N–H bonds but only if the defect size is large enough to accommodate steric effects. For specific conditions such as T = 400 K, p H2 = 1 bar, and only considering one molecular H 2 per defect, three defects, namely, the N monovacancy, 3V(1B2N), and hexagonal 6V(3B3N) could play a role in both the activation and recycling of H 2 as they would be reacting enough to allow a favorable splitting of H 2 while not binding too strongly to allow its recovery. More broadly, a range of p H2 and hydrogen loading conditions were investigated for different types of defects and the finding suggests that p H2 could be used to fine-tune the Gibbs free energy of hydrogenation, thereby allowing several types of defects at different hydrogen loading contents to play a role in the activation/recovery process of H 2 in defective h-BN.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗