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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

A study of the microstructure of a rapidly solidified nickel-base superalloy modified with boron

The microstructures of melt-spun superalloy ribbons with variable boron levels have been studied by transmission electron microscopy. The base alloy was of approximate composition Ni-11% Cr-5%Mo-5%Al-4%Ti with boron levels of 0.06, 0.12, and 0.60 percent (all by weight). Thirty micron thick ribbons display an equiaxed chill zone near the wheel contact side which develops into primary dendrite arms in the ribbon center. Secondary dendrite arms are observed near the ribbon free surface. In the higher boron bearing alloys, boride precipitates are observed along grain boundaries. A concerted effort has been made to elucidate true grain shapes by the use of bright field/dark field microscopy. In the low boron alloy, grain shapes are often convex, and grain faces are flat. Boundary faces frequently have large curvature, and grain shapes form concave polygons in the higher boron level alloys. It is proposed that just after solidification, in all of the alloys studied, grain shapes were initially concave and boundaries were wavy. Boundary straightening is presumed to occur on cooling in the low boron alloy. Boundary migration is precluded in the higher boron alloys by fast precipitation of borides at internal interfaces.

Speck, J. S.↗
DOE OSTI2025

Lattice expansion due to hydrogen absorption into β-rhombohedral boron

β-Rhombohedral boron (β-boron) represents one of the most popular and important allotropic forms of elemental boron. The unit cell of β-boron crystal consists of B 106.6 with a complicated and relatively open structure. We have previously reported the abrupt lattice expansion and shrinkage of β-boron crystal by thermal treatment above 700 K and photoirradiation at room temperature. Our recent studies, combined with X-ray diffraction and atom probe tomography experiments, suggest that the lattice expansion and shrinkage are related to the absorption and release of hydrogen into the structure. In conclusion, the results lead us to a new application of β-boron as a photo-switchable hydrogen storage material.

Atom probe tomography↗
DOE OSTI2025

Growth of Hexagonal Boron Nitride from Molten Nickel Solutions: A Reactive Molecular Dynamics Study

Metal flux methods are excellent for synthesizing high-quality hexagonal boron nitride (hBN) crystals, but the atomic mechanisms of hBN nucleation and growth in these systems are poorly understood and difficult to probe experimentally. Here, we harness classical reactive molecular dynamics (ReaxFF) to unravel the mechanisms of hBN synthesis from liquid nickel solvent over time scales up to 30 ns. These simulations mimic experimental conditions by including relatively large liquid nickel slabs containing dissolved boron and a molecular nitrogen gas phase. Overall, the reaction takes place almost exclusively on the surface of the liquid nickel, owing to the low solubility of nitrogen in bulk nickel and the intermediate species’ preference for the metal–gas interface. The formation of hBN invariably begins by reaction of dinitrogen with nickel-solvated boron atoms at the surface, forming intermediate N–N–B species, which typically evolve into B–N–B units through a short-lived intermediate where a single nitrogen atom is coordinated by one nitrogen and two boron atoms. The resulting B–N–B units, in turn, coalesce with growing hBN nuclei and carry nitrogen between hBN nanocrystals in an Ostwald ripening process. The amount of hBN produced on the tens of nanosecond time scale depends critically on the boron concentration, while having a much weaker dependence on the N 2 pressure for the regime considered (N 2 pressures of 2.5–10 MPa, Ni–B solutions with 6–12% boron by atom fraction). The highest rate of hBN formation occurs at the lowest temperature considered (1750 K, just above the melting point of nickel), while no hBN sheets are formed at 2000 K or above. An analysis of the transition pathways for nitrogen atoms shows that the final step, incorporation of small B–N motifs into larger hBN sheets, is the rate-limiting step in the regimes considered. While raising the temperature from 1750 to 2000 K has little effect on the formation of intermediates (N–N–B, B–N–B, etc.), the lack of large hBN sheets at temperatures >1900 K is explained by decreased probability of the final step and increased probability of breakup of hBN into B–N motifs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Investigation of boron powder flow rates on real-time wall

The limit of boron flow rates for real-time conditioning of the first walls has been systematically investigated in the Experimental Advanced Superconducting Tokamak (EAST) with a full metal wall. Initially, solid boron injection demonstrated effective control over carbon impurities and deuterium recycling on the basis of pre-discharge boronization. A minimum flow rate, identified between 1.0 mg/s and 2.0 mg/s, was necessary for actively improving wall conditions under specific plasma operating scenarios, with this effect progressively enhancing as boron flow rates increased. Additionally, a maximum flow rate, estimated between 3.5 mg/s and 8.0 mg/s, was identified for these plasma conditions. When boron flow rates exceeded this maximum, boron-induced fueling effects influenced the plasma line-averaged density, and at excessively high flow rates, plasma disruption was observed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

The Origin of Improved Performance in Boron‐Alloyed Silicon Nanoparticle‐Based Anodes for Lithium‐Ion Batteries

Stabilizing the solid electrolyte interphase (SEI) remains a key challenge for silicon‐based lithium‐ion battery anodes. Alloying silicon with secondary elements like boron has emerged as a promising strategy to improve the cycle life of silicon anodes, yet the underlying mechanism remains unclear. To address this knowledge gap, how boron concentration influences battery performance is systematically investigated. These results show a near‐monotonic increase in cycle lifetime with higher boron content, with boron‐rich electrodes significantly outperforming pure silicon. Additionally, silicon‐boron alloy anodes exhibit nearly three times longer calendar life than pure silicon. Through detailed mechanistic analysis, alternative contributing factors are systematically ruled out, and it is proposed that improved passivation arises from a strong permanent dipole at the nanoparticle surface. This dipole, formed by undercoordinated and highly Lewis acidic boron, creates a static, ion‐dense layer that stabilizes the electrochemical interface, reducing parasitic electrolyte decomposition and enhancing long‐term stability. These findings suggest that, within the SEI framework, the electric double layer is an important consideration in surface passivation. This insight provides an underexplored parameter space for optimizing silicon anodes in next‐generation lithium‐ion batteries.

25 ENERGY STORAGE↗
NASA NTRS1973

Cosmic abundance of boron.

All abundances are expressed relative to a million atoms of Si. An average abundance of boron in ordinary chondrites is 6.2. The boron abundance in meteorites is highly variable. It has been found that the abundances in carbonaceous chondrites are very much higher than those in ordinary chondrites. The condensation of boron and beryllium from a cooling, low-pressure gas of solar composition is discussed together with the occurrence of boron in the interstellar medium, questions of element abundances in the sun, problems of boron production by cosmic rays, and boron production from supernovae.

Cameron, A. G. W.↗
NASA NTRS1986

Effect of boron on tensile properties of B2 BeAl

Small additions of boron were shown to improve the room temperature ductility of the intermetallic compound Ni3Al. Boron is believed to segregate to the gain boundaries and strengthen them, allowing the inheret ductility of the grains to be achieved. The present study was undertaken to see if boron has a similar effect on the low temperature tensile properties of the equiatomic intermetallic compound FeAl. A binary alloy without boron is compared with an alloy containing 0.78 at % B (0.2 wt %) B, by tensile testing over the temperature range of 300 K to 640 K. Both alloys were processed by powder metallurgy. Results showed that 0.78 at % B addition to FeAl does indeed change the room temperature fracture mode from intergranular to transgranular, suggesting a strengthening of grain boundaries. The alloy containing boron is, however, still brittle at room temperature. A slight decrease in the ductile to brittle transition temperature is, nevertheless, observed. In addition a significant increase in strength of the alloy is observed with boron addition.

Crimp, M.↗
NASA NTRS1985

Boron cosmochemistry

The abundances of boron, silicon, sulfur, and sodium were determined in 50 pieces of 28 chondritic meteorites. Boron abundances are found to define compositionally distinct domains within type C2M carbonaceous chondrites and petrologic type 5 and 6 ordinary chondrites. These domains may manifest the redistribution of boron within meteorites in response to low-temperature hydrous processes in C2M chondrites and high-temperature metamorphic processes in high petrologic type ordinary chondrites. Assuming that the redistribution was limited to regions comparable in size to the mass of the available meteorites, the boron abundance in unaltered material is determined. The depletion factors for boron in chondritic subgroups correlate with those for sulfur in the same subgroups. This correlation indicates that boron, like sulfur, is a moderately volatile element with a condensation temperature between 400 and 900 K.

Curtis, D. B.↗
NASA NTRS1987

Boron nitride: Composition, optical properties and mechanical behavior

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at %. The carbon and oxygen impurities were in the 5 to 8 at % range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Pouch, John J.↗
NASA NTRS1988

Feasibility studies of the growth of 3-5 compounds of boron by MOCVD

Boron-arsenic and boron-phosphorus films have been grown on Si sapphire and silicon-on-sapphire (SOS) by pyrolyzing Group 3 alkyls of boron, i.e., trimethylborane (TMB) and triethylborane (TEB), in the presence of AsH3 and PH3, respectively, in an H2 atmosphere. No evidence for reaction between the alkyls and the hydrides on mixing at room temperature was found. However, the films were predominantly amorphous. The film growth rate was found to depend on the concentration of alkyl boron compound and was essentially constant when TEB and AsH3 were pyrolyzed over the temperature range 550 C to 900 C. The films were found to contain mainly carbon impurities (the amount varying with growth temperature), some oxygen, and were highly stressed and bowed on Si substrates, with some crazing evident in thin (2 micron) B-P and thick (5 micron) B-As films. The carbon level was generally higher in films grown using TEB as the boron source. Films grown from PH3 and TMB showed a higher carbon content than those grown from AsH3 and TMB. Based on their B/As and B/P ratios, films with nominal compositions B sub12-16 As2 and B sub1.1-1.3 P were grown using TMB as the boron source.

Manasevit, H. M.↗
NASA NTRS1987

Boron nitride - Composition, optical properties, and mechanical behavior

A low energy ion beam deposition technique was used to grow boron nitride films on quartz, germanium, silicon, gallium arsenide, and indium phosphate. The film structure was amorphous with evidence of a hexagonal phase. The peak boron concentration was 82 at. percent. The carbon and oxygen impurities were in the 5 to 8 at. percent range. Boron-nitrogen and boron-boron bonds were revealed by X-ray photoelectron spectroscopy. The index of refraction varied from 1.65 to 1.67 for films deposited on III-V compound semiconductors. The coefficient of friction for boron nitride in sliding contact with diamond was less than 0.1. The substrate was silicon.

Pouch, John J.↗
NASA NTRS1993

The effect of boron supplementation on lean body mass, plasma testosterone levels, and strength in male bodybuilders

The effect of boron supplementation was investigated in 19 male bodybuilders ages 20-27 years. Ten were given a 2.5-mg boron supplement while 9 were given a placebo every day for 7 weeks. Plasma total and free testosterone, plasma boron, lean body mass, and strength measurements were determined on Days 1 and 49 of the study. Plasma boron values were significantly (p < 0.05) different as the experimental group increased from (+/- SD) 20.1 +/- 7.7 ppb pretest to 32.6 +/- 27.6 ppb posttest, while the control group mean decreased from 15.1 +/- 14.4 ppb pretest to 6.3 +/- 5.5 ppb posttest. Analysis of variance indicated no significant effect of boron supplementation on any of the dependent variables. Both groups demonstrated significant increases in total testosterone, lean body mass, 1-RM squat, and 1-RM bench press. The findings suggest that 7 weeks of bodybuilding can increase total testosterone, lean body mass, and strength in lesser trained bodybuilders, and that boron supplementation had no effect on these measures.

Controlled Clinical Trial↗
DOE OSTI2026

CO (2) Electroreduction on Borated Copper Surfaces: Boron Active Sites, Not Copper

Boron-doped copper has recently emerged as an active and stable catalyst for the electrochemical reduction of CO 2 to value-added C 2 products. Here, in this work, we develop a realistic model of CO electroreduction on surface borides of copper under operational conditions, taking into account the effects of electrode potential, electrolyte environment, and pH. We study the possible reconstruction of the electrocatalyst surface using grand canonical DFT and global optimization to obtain a potential-dependent grand canonical ensemble description of metastable, hydrogen-covered catalyst surfaces. Two key surface configurations, low H coverage (LC, −0.6 V SHE ) and high H coverage (HC, −0.8 V SHE ), dominate this ensemble, with the former being kinetically persistent and C 2 selective under strongly reducing conditions. Nonmetallic boron sites on the surface copper boride are found to bind CO more strongly than copper sites, and mechanistic investigation of CO electroreduction pathways presents a surprisingly unconventional case of boron-centered reactivity in contrast to typical copper-centered reactivity. Neighboring boron sites present along boron chains on the surface copper boride are found to facilitate C−C coupling, thereby driving the high C 2 selectivity of this electrocatalyst.

boron-doped copper↗
DOE OSTI2026

Impact of toroidal magnetic field direction on integrated ELM-stable operation and divertor power exhaust via boron powder injection in EAST

We report the first in-depth comparison of the impact of toroidal magnetic field direction on solid boron injection used for Edge-Localized Mode (ELM) control, power exhaust, and core high-Z impurity control in the Experimental Advanced Superconducting Tokamak. With favorable ion ∇B drift towards the upper X-point in an upper-single-null configuration, boron injection effectively suppresses ELMs, produces a detachment of the inner divertor target, and leads to improved energy confinement. ELM suppression in this configuration is accompanied by the excitation of an Edge Harmonic Mode. In contrast, with unfavorable ion ∇B drift away from the upper X-point, boron injection also suppresses ELMs but leads to a more symmetric detachment state of both the inner and outer divertor targets, while plasma energy confinement is slightly degraded despite similar boron injection levels; a different low-frequency coherent mode without multiple harmonics is observed. Measurements from toroidally separated views show that the divertor response to boron injection is essentially toroidally symmetric, supporting the use of two-dimensional SOLPS-ITER modeling with a toroidally uniform impurity source. These experimental observations are qualitatively consistent with SOLPS-ITER simulations, which highlight the critical role of E × B drift effects in setting the Bt-dependent in–out asymmetry of detachment and in asymmetrically transporting particles and injected impurities within the scrape-off layer and private-flux region. These findings underscore the importance of drift physics and real-time wall conditioning in controlling low-Z impurity transport and optimizing edge solutions for integrated, ELM-stable, high-performance tokamak operation.

E × B drift↗
DOE OSTI2026

Structural characterization of neutron irradiated hexagonal boron-10 nitride-15 single crystals

The negatively charged boron vacancy ($V$$^{–}_{⁠B}$⁠) in hexagonal boron nitride (hBN) is a promising quantum defect that can be used to sense pressure, temperature, and magnetic field with high spatial resolution. hBN enriched with the boron-10 and nitrogen-15 isotopes, denoted h 10 B 15 N, has good contrast and coherence for quantum sensing because nitrogen-15 has nuclear spin (1/2), reducing hyperfine interactions. Boron vacancies can be generated by neutron irradiation, which causes the transmutation of the boron-10 isotope to lithium-7. In this study, the ancillary structural, compositional, and mechanical properties of h 10 B 15 N crystals that have been subjected to neutron irradiation fluences from 1.4 × 10 16 to 8.4 × 10 17 n/cm 2 were thoroughly characterized. Besides creating $V$$^{–}_{⁠B}$⁠, the process also induces other defects that generate strain in the crystal lattice. In turn, the mechanical properties of these crystals change drastically. Investigated here are the visual changes, lattice integrity, composition, crystal strain, and elastic constants (C 33 and C 66 ) to assess how these characteristics change as a function of neutron fluence.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗
DOE OSTI2025

Measurement of Boron by 3 He Nuclear Reaction Analysis

Reference samples with known boron coverage are needed for calibrating measurements of boron deposition in tokamaks where boron is used for wall conditioning to improve fusion plasma performance. This report summarizes recent work at the Sandia Ion Beam Laboratory to fabricate such reference samples. Rutherford backscattering and nuclear reaction analysis were used to determine the boron coverage on reference samples consisting of a thin layer of boron on a silicon substrate.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1975

X-ray method shows fibers fail during fatigue of boron-epoxy laminates

A method proposed for studying progressive fiber fracture in boron-epoxy laminates during fatigue tests is described. It is based on the intensity of X-ray absorption of the tungsten core in the boron filaments as contrasted with that of the boron and epoxy matrix. When the laminate is X-rayed, the image of the tungsten in the born filaments is recorded on a photographic plate. Breaks in the boron laminates can be easily identified by magnifying the photographic plates. The method is suitable for studying broken boron filaments in most matrix materials, and may supply key information for developing realistic fatigue and fracture models.

Roderick, G. L.↗