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NASA NTRS2012

Barrier infrared detector

A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be "chirped" (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

Ting, David Z.↗

NASA NTRS1990

Ballistic-hole spectroscopy of interfaces

A new technique allows direct control and measurement of ballistic-hole transport through interfaces. This spectroscopy has been applied to determine the detailed properties of hole transmission through metal-semiconductor interfaces and probe the valence-band structure of subsurface semiconductor heterostructures. The ballistic-hole probe is created by electron-tunneling-microscopy methods and provides high-spatial-resolution capabilities.

Hecht, M. H.↗

NASA NTRS2008

INTEGRAL Long-Term Monitoring of the Supergiant Fast X-Ray Transient XTE J1739-302

Context. In the past few years, a new class of High Mass X-Ray Binaries (HMXRB) has been claimed to exist, the Supergiant Fast X-ray Transients (SFXT). These are X-ray binary systems with a compact companion orbiting a supergiant star which show very short and bright outbursts in a series of activity periods overimposed on longer quiescent periods. Only very recently the first attempts to model the behaviour of these sources have been published, some of them within the framework of accretion from clumpy stellar winds. Aims. Our goal is to analyze the properties of XTE J1739-302/IGR J17391-3021 within the context of the clumpy structure of the supergiant wind. Methods. We have used INTEGRAL and RXTE/PCA observations in order to obtain broad band (1 - 200 keV) spectra and light curves of XTE J1739-302 and investigate its X-ray spectrum and temporal variability. Results. We have found that XTE J1739-302 follows a much more complex behaviour than expected. Far from presenting a regular variability pattern, XTE J1739-302 shows periods of high, intermediate, and low flaring activity.

Blay, P.↗

NASA NTRS1995

Unoccupied electronic resonances of Sc adsorbed on W(001) by k-resolved inverse photoemission

Scandium adsorbed on the (001) face of tungsten has been studied using Auger-electron spectroscopy, low-energy electron diffraction, k-resolved inverse photoelectron spectroscopy, work-function measurements, and relativistic-electronic-structure calculations. We find that the work function of W(001) does not decrease monotonically as a function of scandium adsorption but reaches a minimum value of Phi = 3.25 eV at 50% coverage. For a complete monolayer, an order 1 X 1 Sc overlayer is formed. Inverse photoemission in the isochromat mode was used to map the unoccupied energy levels of this overlayer along the bar-Gamma(bar-Mu) symmetry direction of the surface Brillouin zone. Local-density-functional calculations using the muffin-tin orbital method were performed for a 1 X 1 Sc overlayer on W and are compared with the experimental two-dimensional band structure.

Lamouri, A.↗

NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗

NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗

NASA NTRS1997

Doping of Semiconducting Atomic Chains

Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Toshishige, Yamada↗

NASA NTRS2012

A Parameterized Inversion Model for Soil Moisture and Biomass from Polarimetric Backscattering Coefficients

A semi-empirical algorithm for the retrieval of soil moisture, root mean square (RMS) height and biomass from polarimetric SAR data is explained and analyzed in this paper. The algorithm is a simplification of the distorted Born model. It takes into account the physical scattering phenomenon and has three major components: volume, double-bounce and surface. This simplified model uses the three backscattering coefficients ( sigma HH, sigma HV and sigma vv) at low-frequency (P-band). The inversion process uses the Levenberg-Marquardt non-linear least-squares method to estimate the structural parameters. The estimation process is entirely explained in this paper, from initialization of the unknowns to retrievals. A sensitivity analysis is also done where the initial values in the inversion process are varying randomly. The results show that the inversion process is not really sensitive to initial values and a major part of the retrievals has a root-mean-square error lower than 5% for soil moisture, 24 Mg/ha for biomass and 0.49 cm for roughness, considering a soil moisture of 40%, roughness equal to 3cm and biomass varying from 0 to 500 Mg/ha with a mean of 161 Mg/ha

soil moisture↗

NASA NTRS2012

NASA Tech Briefs, October 2012

Topics discussed include: Detection of Chemical Precursors of Explosives; Detecting Methane From Leaking Pipelines and as Greenhouse Gas in the Atmosphere; Onboard Sensor Data Qualification in Human-Rated Launch Vehicles; Rugged, Portable, Real-Time Optical Gaseous Analyzer for Hydrogen Fluoride; A Probabilistic Mass Estimation Algorithm for a Novel 7-Channel Capacitive Sample Verification Sensor; Low-Power Architecture for an Optical Life Gas Analyzer; Online Cable Tester and Rerouter; A Three-Frequency Feed for Millimeter-Wave Radiometry; Capacitance Probe Resonator for Multichannel Electrometer; Inverted Three-Junction Tandem Thermophotovoltaic Modules; Fabrication of Single Crystal MgO Capsules; Inflatable Hangar for Assembly of Large Structures in Space; Mars Aqueous Processing System; Hybrid Filter Membrane; Design for the Structure and the Mechanics of Moballs; Pressure Dome for High-Pressure Electrolyzer; Cascading Tesla Oscillating Flow Diode for Stirling Engine Gas Bearings; Compact, Low-Force, Low-Noise Linear Actuator; Ultra-Compact Motor Controller; Extreme Ionizing-Radiation-Resistant Bacterium; Wideband Single-Crystal Transducer for Bone Characterization; Fluorescence-Activated Cell Sorting of Live Versus Dead Bacterial Cells and Spores; Nonhazardous Urine Pretreatment Method; Laser-Ranging Transponders for Science Investigations of the Moon and Mars; Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers; Structural Health Monitoring with Fiber Bragg Grating and Piezo Arrays; Low-Gain Circularly Polarized Antenna with Torus-Shaped Pattern; Stereo and IMU- Assisted Visual Odometry for Small Robots; Global Swath and Gridded Data Tiling; GOES-R: Satellite Insight; Aquarius iPhone Application; Monitoring of International Space Station Telemetry Using Shewhart Control Charts; Theory of a Traveling Wave Feed for a Planar Slot Array Antenna; Time Manager Software for a Flight Processor; Simulation of Oxygen Disintegration and Mixing With Hydrogen or Helium at Supercritical Pressure; A Superfluid Pulse Tube Refrigerator Without Moving Parts for Sub-Kelvin Cooling; Sapphire Viewports for a Venus Probe; The Mobile Chamber; Electric Propulsion Induced Secondary Mass Spectroscopy; and Radiation-Tolerant DC-DC Converters.

Source record↗

NASA NTRS2015

Single-Band and Dual-Band Infrared Detectors

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

Ting, David Z.↗

NASA NTRS2017

Single-Band and Dual-Band Infrared Detectors

Ting, David Z.↗

NASA NTRS1985

General theory of the transverse dielectric constant of III-V semiconducting compounds

A general model of the transverse dielectric constant of III-V compounds is developed using a hybrid method which combines the kp method with a nonlocal pseudopotential calculation. In this method the Brillouin zone is partitioned into three regions by expanding the energy bands and matrix elements about the F, X, and L symmetry points. The real and imaginary parts of the dielectric constant are calculated as a sum of the individual contributions of each region. By using this partition method, it is possible to get good insight into the dependence of the dielectric constant on the shape of the band structure.

Kahen, K. B.↗

NASA NTRS2022

VLTI-MATISSE L- and N-Band Aperture-Synthesis Imaging of the Unclassified B[e] star FS Canis Majoris

Context. FS Canis Majoris (FS CMa, HD 45677) is an unclassified B[e] star surrounded by an inclined dust disk. The evolutionary stage of FS CMa is still debated. Perpendicular to the circumstellar disk, a bipolar outflow was detected. Infrared aperture-synthesis imaging provides us with a unique opportunity to study the disk structure. Aims. Our aim is to study the intensity distribution of the disk of FS CMa in the mid-infrared L and N bands. Methods. We performed aperture-synthesis imaging of FS CMa with the MATISSE instrument (Multi AperTure mid-Infrared SpectroScopic Experiment) in the low spectral resolution mode to obtain images in the L and N bands. We computed radiative transfer models that reproduce the L- and N-band intensity distributions of the resolved disks. Results. We present L- and N-band aperture-synthesis images of FS CMa reconstructed in the wavelength bands of 3.4–3.8 and 8.6–9.0 μm. In the L-band image, the inner rim region of an inclined circumstellar disk and the central object can be seen with a spatial resolution of 2.7 milliarcsec (mas). An inner disk cavity with an angular diameter of ~6 × 12 mas is resolved. The L-band disk consists of a bright northwestern (NW) disk region and a much fainter southeastern (SE) region. The images suggest that we are looking at the bright inner wall of the NW disk rim, which is on the far side of the disk. In the N band, only the bright NW disk region is seen. In addition to deriving the inclination and the inner disk radius, fitting the reconstructed brightness distributions via radiative transfer modelling allows one to constrain the innermost disk structure, in particular the shape of the inner disk rim.

techniques↗

NASA NTRS2008

Single Wall Nanotube Type-Specific Functionalization and Separation

Metallic single-wall carbon nanotubes were selectively solubilized in THF and separated from semiconducting nanotubes. Once separated, the functionalized metallic tubes were de-functionalized to restore their metallic band structure. Absorption and Raman spectroscopy of the enriched samples support conclusions of the enrichment of nanotube samples by metallic type. A scalable method for enriching nanotube conductive type has been developed. Raman and UV-Vis data indicate SWCNT reaction with dodecylbenzenediazonium results in metallic enrichment. It is expected that further refinement of this techniques will lead to more dramatic separations of types and diameters.

Boul, Peter↗

NASA NTRS2013

A Review of Spectral Methods for Variable Amplitude Fatigue Prediction and New Results

A comprehensive review of the available methods for estimating fatigue damage from variable amplitude loading is presented. The dependence of fatigue damage accumulation on power spectral density (psd) is investigated for random processes relevant to real structures such as in offshore or aerospace applications. Beginning with the Rayleigh (or narrow band) approximation, attempts at improved approximations or corrections to the Rayleigh approximation are examined by comparison to rainflow analysis of time histories simulated from psd functions representative of simple theoretical and real world applications. Spectral methods investigated include corrections by Wirsching and Light, Ortiz and Chen, the Dirlik formula, and the Single-Moment method, among other more recent proposed methods. Good agreement is obtained between the spectral methods and the time-domain rainflow identification for most cases, with some limitations. Guidelines are given for using the several spectral methods to increase confidence in the damage estimate.

Larsen, Curtis E.↗

NASA NTRS1998

Health Monitoring of Composite Material Structures Using a Vibrometry Technique

Non-destructive evaluation (NDE) methods for quantifying and locating damage are essential for inspecting structures to ensure safety and reliability. Transmittance function monitoring is a potentially new NDE technique being tested as a tool to detect, quantify, and locate damage on flexible structures. The technique has a large spatial range that is practical for detecting damage on large composite material structures such as a reusable launch vehicle. The Transmittance Function (TF) theory is based on structural dynamics principles that define how vibration at one point in a structure is related to a force at another point. This relationship is called the Frequency Response Function (FRF). A Transmittance Function (TF) is derived as the ratio of FRFs, and can detect damage because the FRFs change due to damage. If one excitation is used for the testing, the force does not need to be measured to compute the TF. In the damage detection procedure, the structure is subjected to wide-band vibration and TFs are computed between different accelerometers to detect changes in the structure, presumably due to damage. In the first year of the project the TF method was tested on a bolted panel, a curved panel, and beams, all made of fiberglass. It was shown that damage could be detected using low frequency vibration, 250 to 1,250 Hz. The technique is sensitive to damage, but it requires storage of historical or pre-damage TFs for the healthy structure. This would become a large data storage requirement for large structures. Thus one objective for the second year of the project was to eliminate the need to store historical data. The second year report gives details of how storage of historical data was eliminated. Further results of testing panel structures are also given.

Schulz, Mark J.↗

NASA NTRS2005

Characterization of Meta-Materials Using Computational Electromagnetic Methods

An efficient and powerful computational method is presented to synthesize a meta-material to specified electromagnetic properties. Using the periodicity of meta-materials, the Finite Element Methodology (FEM) is developed to estimate the reflection and transmission through the meta-material structure for a normal plane wave incidence. For efficient computations of the reflection and transmission over a wide band frequency range through a meta-material a Finite Difference Time Domain (FDTD) approach is also developed. Using the Nicholson-Ross method and the Genetic Algorithms, a robust procedure to extract electromagnetic properties of meta-material from the knowledge of its reflection and transmission coefficients is described. Few numerical examples are also presented to validate the present approach.

Deshpande, Manohar↗

NASA NTRS1987

Determination of a natural valence-band offset - The case of HgTe and CdTe

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Shih, C. K.↗