Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “back contact”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Recent developments in thin silicon solar cells

Fifty micron thick cells 2x4 sq cm area with coplanar back contacts were made with good yield, and with output equivalent to conventional top/bottom contact cells of the same thickness. A wraparound junction (WAJ) design was selected, and used successfully. The low alpha cells delivered were all above 12%, the average efficiency was 13% and the best was 14%. The overall yield was 35 to 40%, comparable to that for conventional 50 micron cells. The process sequence was moderately complex, but showed good reproducibility. The CBC cells performed wall under several important environmental tests. High alpha CBC cells were made, with about 1% increase in conversion efficiency. The most important design criteria were the choice of back surface N+ and P+ areas.

Ho, F.↗
NASA NTRS1979

Development of economical improved thick film solar cell contact

Metal screened electrodes were investigated with base metal pastes and silver systems being focused upon. Contact resistance measurements were refined. A facility allowing fixing in hydrogen and other atmospheres was acquired. Several experiments were made applying screenable pastes to solar cells. Doping investigations emphasized eutectic alloys reduced to powders. Metal systems were reviewed and base metal experiments were done with nickel and copper using lead and tin as the frit metals. Severe adhesion problems were experienced with hydrogen atmospheres in all metal systems. A two step firing schedule was devised. Aluminum-silicon and aluminum-germanium eutectic doping additions to copper pastes were tried on 2 1/4 in diameter solar cell back contacts, both with good results.

Ross, B.↗
NASA NTRS1974

FEP-Teflon covered solar cell array advancements

Progress is reported on the design and development of lightweight, flexible, FEP encapsulated solar cell modules. Such modules are intended to form standardized building blocks for larger roll-up or fold-up solar cell blankets having specific performance in the order of 100 W/sq m and 80 W/kg in space near earth. Modules are constructed by heat-laminating interconnected 200-micron thick single crystal silicon solar cells with solderless front and back contacts between two layers of clear FEP. The outer FEP layer is 125 microns thick and serves as the solar cell cover material. The inner layer is 50 microns thick and serves as the adhesive between the solar cells and a 25-micron thick loadbearing Kapton substrate sheet.

Rauschenbach, H. S.↗
NASA NTRS1978

Back wall solar cell

A solar cell is disclosed which comprises a first semiconductor material of one conductivity type with one face having the same conductivity type but more heavily doped to form a field region arranged to receive the radiant energy to be converted to electrical energy, and a layer of a second semiconductor material, preferably highly doped, of opposite conductivity type on the first semiconductor material adjacent the first semiconductor material at an interface remote from the heavily doped field region. Instead of the opposite conductivity layer, a metallic Schottky diode layer may be used, in which case no additional back contact is needed. A contact such as a gridded contact, previous to the radiant energy may be applied to the heavily doped field region of the more heavily doped, same conductivity material for its contact.

Brandhorst, H. W., Jr.↗
NASA NTRS1979

Development of High Efficiency (14%) Solar Cell Array Module

High efficiency solar cells required for the low cost modules was developed. The production tooling for the manufacture of the cells and modules was designed. The tooling consisted of: (1) back contact soldering machine; (2) vacuum pickup; (3) antireflective coating tooling; and (4) test fixture.

Iles, P. A.↗
NASA NTRS1979

Design considerations for the Tandem Junction Solar Cell

Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

Matzen, W. T.↗
NASA NTRS1979

Thin cells for space

Research and pilot line production efforts directed towards the fabrication of high efficiency ultrathin silicon solar cells (50 micrometers) are reported. Conventional ultrathin cells with air-mass-zero (AM0) efficiencies exceeding 14% and coplanar back contact cells with AM0 efficiencies up to 11.7% were developed. The primary mechanisms limiting efficiency were determined in both types of cells, and they are discussed within the context of further improving efficiency. Results of pilot line production of conventional ultrathin cells are also presented. Average AM0 efficiencies of 12% were readily achieved for 2000 cell production runs.

Storti, G.↗
NASA NTRS1979

A device model for the tandem junction solar cell

A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.

Matzen, W. T.↗
NASA NTRS1980

Planar multijunction high voltage solar cells

Technical considerations, preliminary results, and fabrication details are discussed for a family of high-voltage planar multi-junction (PMJ) solar cells which combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Evans, J. C., Jr.↗
NASA NTRS1980

Process development for automated solar cell and module production. Task 4: Automated array assembly

A process sequence which can be used in conjunction with automated equipment for the mass production of solar cell modules for terrestrial use was developed. The process sequence was then critically analyzed from a technical and economic standpoint to determine the technological readiness of certain process steps for implementation. The steps receiving analysis were: back contact metallization, automated cell array layup/interconnect, and module edge sealing. For automated layup/interconnect, both hard automation and programmable automation (using an industrial robot) were studied. The programmable automation system was then selected for actual hardware development.

Source record↗
NASA NTRS1980

Thin n-i-p radiation-resistant solar cell feasibility study

Silicon solar cells were fabricated to verify the predictions that: (1) thin n(+)pp(+) cells can provide high values of open circuit voltage even when high resistivity base material ( 1000 omega-cm) is used; (2) cells with good p(+) back contacts will display an increase in open circuit voltage with decreasing cell thickness; and (3) high quality, thin, high resistivity, solar cells can be made using processing compatible with conventional practice. Analysis of I-V and spectral response measurements of these cells confirmed theoretical predictions and thereby pointed to voltages beyond the near 600 mV obtained in this study.

Allison, J. F.↗
NASA NTRS1980

Photovoltaic technology development for synchronous orbit

Accomplishments and expected benefits are summarized for the following efforts: (1) achieving silicon solar cell efficiency of 18% at 200 micron m to 250 micron m thickness; (2) reducing silicon cell radiation damage in geosynchronous orbit after 10 years to less than 15%; (3) demonstrating coplanar back contact 50 micron m thick silicon solar cells with efficiency of 14%; (4) demonstrating the feasibility of a radiation tolerant GaAs concentrator cell; (5) achieving 30% efficient photo conversion in the laboratory; (6) defining candidate concepts for 50% efficient electromagnetic conversion; and (7) demonstrating the technology for protecting arrays capable of 300W/kg after 10 years in geosynchronous orbit.

Brandhorst, H. W.↗
NASA NTRS1980

The planar multijunction cell - A new solar cell for earth and space

A new family of high-voltage solar cells, called the planar multijunction (PMJ) cell is being developed. The new cells combine the attractive features of planar cells with conventional or interdigitated back contacts and the vertical multijunction (VMJ) solar cell. The PMJ solar cell is internally divided into many voltage-generating regions, called unit cells, which are internally connected in series. The key to obtaining reasonable performance from this device was the separation of top surface field regions over each active unit cell area. Using existing solar cell fabricating methods, output voltages in excess of 20 volts per linear centimeter are possible. Analysis of the new device is complex, and numerous geometries are being studied which should provide substantial benefits in both normal sunlight usage as well as with concentrators.

Evans, J. C., Jr.↗
NASA NTRS1981

Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

Lagowski, J.↗
NASA NTRS1980

A low-cost photovoltaic cell process based on thick film techniques

The low-cost, easily automated processing for solar cell fabrication being developed at Spectrolab for the DOE LSA program is described. These processes include plasma-etching, spray-on diffusion sources and antireflective coating, thick film metallization, aluminum back contacts, laser scribing and ultrasonic soldering. The process sequence has been shown to produce solar cells having 15% conversion efficiency at AM1 which meet the cell fabrication budget required for the DOE 1986 cost goal of $0.70 per peak watt in 1980.

Mardesich, N.↗
NASA NTRS1981

Development of thin wraparound junction silicon solar cells

The state of the art technologies was applied to fabricate 50 micro thick 2x4 cm, coplanar back contact (CBC) solar cells with AMO efficiency above 12%. A requirement was that the cells have low solar absorptance. A wraparound junction (WAJ) with wraparound metallization was chosen. This WAJ approach avoided the need for very complex fixturing, especially during rotation of the cells for providing adequate contacts over dielectric edge layers. The contact adhesion to silicon was considered better than to an insulator. It is indicated that shunt resistance caused by poor WAJ diode quality, and series resistance from the WAJ contact, give good cell performance. The cells developed reached 14 percent AMO efficiency (at 25 C), with solar absorptance values of 0.73. Space/cell environmental tests were performed on these cells and the thin CSC cells performed well. The optimized design configuration and process sequence were used to make 50 deliverable CBC cells. These cells were all above 12 percent efficiency and had an average efficiency of -13 percent. Results of environmental tests (humidity-temperature, thermal shock, and contact adherence) are also given.

Ho, F.↗
NASA NTRS1981

Fabrication of multijunction high voltage concentrator solar cells by integrated circuit technology

Standard integrated circuit technology has been developed for the design and fabrication of planar multijunction (PMJ) solar cell chips. Each 1 cm x 1 cm solar chip consisted of six n(+)/p, back contacted, internally series interconnected unit cells. These high open circuit voltage solar cells were fabricated on 2 ohm-cm, p-type 75 microns thick, silicon substrates. A five photomask level process employing contact photolithography was used to pattern for boron diffusions, phorphorus diffusions, and contact metallization. Fabricated devices demonstrated an open circuit voltage of 3.6 volts and a short circuit current of 90 mA at 80 AMl suns. An equivalent circuit model of the planar multi-junction solar cell was developed.

Valco, G. J.↗