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NASA NTRS2020

Body of Knowledge for Gallium Nitride Power Electronics

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.

Gallium Nitride Power Electronics↗
NASA NTRS2016

Body of Knowledge for Silicon Carbide Power Electronics

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Silicon Carbide Power Electronics↗
NASA NTRS2008

1KW Power Transmission Using Wireless Acoustic-Electric Feed-Through (WAEF)

A variety of space applications require the delivery of power into sealed structures. Since the structural integrity can be degraded by holes for cabling we present an alternative method of delivering power and information using stress waves to the internal space of a sealed structure. One particular application of this technology is in sample return missions where it is critical to preserve the sample integrity and to prevent earth contamination. Therefore, the container has to be hermetically sealed and the integrity of the seal must be monitored in order to insure to a high degree of reliability the integrity of the sample return vessel. In this study we investigated the use of piezoelectric acoustic-electric power feed-through devices to transfer electric power wirelessly through a solid wall by using elastic or acoustic waves. The technology is applicable to a range of space and terrestrial applications where power is required by electronic equipment inside sealed containers, vacuum or pressure vessels, etc., where holes in the wall are prohibitive or may result in significant structural performance degradation or unnecessarily complex designs. To meet requirements of higher power applications, the feasibility to transfer kilowatts level power was investigated. Pre-stressed longitudinal piezoelectric feed-through devices were analyzed by finite element models and an equivalent circuit model was developed to predict the power transfer characteristics to different electric loads. Based on the results of the analysis a prototype device was designed, fabricated and a demonstration of the transmission of electric power up to 1.068-kW was successfully conducted. Efficiencies in the 80-90% range were also demonstrated and methods to increase the efficiency further are currently being considered.

pressure vessels↗
NASA NTRS1993

Design of power electronics for TVC EMA systems

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Nelms, R. Mark↗
NASA NTRS2005

Bio-Nanobattery Development and Characterization

A bio-nanobattery is an electrical energy storage device that utilizes organic materials and processes on an atomic, or nanometer-scale. The bio-nanobattery under development at NASA s Langley Research Center provides new capabilities for electrical power generation, storage, and distribution as compared to conventional power storage systems. Most currently available electronic systems and devices rely on a single, centralized power source to supply electrical power to a specified location in the circuit. As electronic devices and associated components continue to shrink in size towards the nanometer-scale, a single centralized power source becomes impractical. Small systems, such as these, will require distributed power elements to reduce Joule heating, to minimize wiring quantities, and to allow autonomous operation of the various functions performed by the circuit. Our research involves the development and characterization of a bio-nanobattery using ferritins reconstituted with both an iron core (Fe-ferritin) and a cobalt core (Co-ferritin). Synthesis and characterization of the Co-ferritin and Fe-ferritin electrodes were performed, including reducing capability and the half-cell electrical potentials. Electrical output of nearly 0.5 V for the battery cell was measured. Ferritin utilizing other metallic cores were also considered to increase the overall electrical output. Two dimensional ferritin arrays were produced on various substrates to demonstrate the feasibility of a thin-film nano-scaled power storage system for distributed power storage applications. The bio-nanobattery will be ideal for nanometerscaled electronic applications, due to the small size, high energy density, and flexible thin-film structure. A five-cell demonstration article was produced for concept verification and bio-nanobattery characterization. Challenges to be addressed include the development of a multi-layered thin-film, increasing the energy density, dry-cell bionanobattery development, and selection of ferritin core materials to allow the broadest range of applications. The potential applications for the distributed power system include autonomously-operating intelligent chips, flexible thin-film electronic circuits, nanoelectromechanical systems (NEMS), ultra-high density data storage devices, nanoelectromagnetics, quantum electronic devices, biochips, nanorobots for medical applications and mechanical nano-fabrication, etc.

King, Glen C.↗
NASA NTRS2011

Accelerated Aging with Electrical Overstress and Prognostics for Power MOSFETs

Power electronics play an increasingly important role in energy applications as part of their power converter circuits. Understanding the behavior of these devices, especially their failure modes as they age with nominal usage or sudden fault development is critical in ensuring efficiency. In this paper, a prognostics based health management of power MOSFETs undergoing accelerated aging through electrical overstress at the gate area is presented. Details of the accelerated aging methodology, modeling of the degradation process of the device and prognostics algorithm for prediction of the future state of health of the device are presented. Experiments with multiple devices demonstrate the performance of the model and the prognostics algorithm as well as the scope of application. Index Terms Power MOSFET, accelerated aging, prognostics

Saha, Sankalita↗
NASA NTRS1997

High Time Resolution Study of the Hemispheric Power Carried by Energetic Electrons Into the Ionosphere During the May 19-20, 1996, Auroral Activity

The UVI imager on board the POLAR satellite offers the opportunity to obtain high time resolution global auroral images. The spectral resolution of the imager is sufficient to separate the auroral emission from the scattered sunlight, even when the entire auroral zone is sunlit. The energy flux of the precipitating electrons is derived from the surface brightness through the LBH-long filter. Global images which have the dayglow removed are spatially integrated to yield the total hemispheric electron energy flux. This parameter, the hemispheric power, has found much application in ionospheric modeling. It can also be derived from electron spectra measured along the track of the NOAA/TIROS satellites that are combined with average empirical auroral precipitation patterns. We show that the hemispheric power input derived from the two-dimensional images represents a substantial improvement in the temporal variability of this parameter. We present an example for the period of 19/20 May 1996 by comparing power indices derived from NOAA/TIROS measurements with those derived from the UVI images.

Lummerzheim, D.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS1991

Advanced composite applications for sub-micron biologically derived microstructures

A major thrust of advanced material development is in the area of self-assembled ultra-fine particulate based composites (micro-composites). The application of biologically derived, self-assembled microstructures to form advanced composite materials is discussed. Hollow 0.5 micron diameter cylindrical shaped microcylinders self-assemble from diacetylenic lipids. These microstructures have a multiplicity of potential applications in the material sciences. Exploratory development is proceeding in application areas such as controlled release for drug delivery, wound repair, and biofouling as well as composites for electronic and magnetic applications, and high power microwave cathodes.

Schnur, J. M.↗
NASA NTRS2003

Cryogenic Evaluation of an Advanced DC/DC Converter Module for Deep Space Applications

DC/DC converters are widely used in power management, conditioning, and control of space power systems. Deep space applications require electronics that withstand cryogenic temperature and meet a stringent radiation tolerance. In this work, the performance of an advanced, radiation-hardened (rad-hard) commercial DC/DC converter module was investigated at cryogenic temperatures. The converter was investigated in terms of its steady state and dynamic operations. The output voltage regulation, efficiency, terminal current ripple characteristics, and output voltage response to load changes were determined in the temperature range of 20 to -140 C. These parameters were obtained at various load levels and at different input voltages. The experimental procedures along with the results obtained on the investigated converter are presented and discussed.

Elbuluk, Malik E.↗
NASA NTRS2004

Silicon Carbide Schottky Barrier Diode

This chapter reviews the status of SiC Schottky barrier diode development. The fundamental of Schottky barrier diodes is first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes, and merged-pin-Schottky diodes. The development history is reviewed ad the key performance parameters are discussed. Applications of SiC SBDs in power electronic circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Zhao, Jian H.↗
NASA NTRS1994

Design of power electronics for TVC and EMA systems

The EMA systems proposed for future space transportation applications are high power systems operating at voltages up to 270 Vdc and at current levels on the order of hundreds of amperes. The position of the actuator is controlled by modulating the flow of energy from the source to an electric motor with an inverter. Hard-switching of the semiconductor devices in the inverter results in considerable device switching stresses and losses and in the generation of substantial amounts of EMI. Both of these can be reduced by employing zero-voltage-switching (ZVS) techniques in the inverter. This project has focused on the development of a ZVS inverter for the Marshall Space Center EMA prototypes, which utilize brushless dc motors to convert electrical energy to mechanical energy. An inverter which permitted zero-voltage switching and a quasi-PWM operation was selected for study and implementation. A waveshaping circuit is added to the front of a standard three-phase inverter to achieve the desired switching properties. This circuit causes the input voltage of the three-phase inverter to ring to zero where it is clamped for a short period of time. During this zero-voltage period, any of the semiconductor switches in the three-phase inverter are switched on or off at zero voltage resulting in a reduction in switching losses and EMI. The operation of this waveshaping circuit and its interaction with the three-phase inverter are described. The different circuit modes were analyzed using equivalent circuits. Based on this analysis, design relationships were developed for calculating component values for the circuit elements in the waveshaping circuit. Waveforms of various voltages and currents in the waveshaping circuit were plotted and used to determine the ratings of the semiconductors in the waveshaping circuit. The implementation of this inverter are described. Block diagrams for the overall control system and the waveshaping circuit control are presented and discussed. The current control scheme employed in the controller is also described.

Nelms, R. Mark↗
NASA NTRS1992

Control concepts for active magnetic bearings

Active Magnetic Bearings (AMB) are becoming increasingly significant for various industrial applications. Examples are turbo-compressors, centrifuges, high speed milling and grinding spindles, vibration isolation, linear guides, magnetically levitated trains, vacuum and space applications. Thanks to the rapid progress and drastic cost reduction in power- and micro-electronics, the number of AMB applications is growing very rapidly. Industrial uses of AMBs leads to new requirements for AMB-actuators, sensor systems, and rotor dynamics. Especially desirable are new and better control concepts to meet demand such as low cost AMB, high stiffness, high performance, high robustness, high damping up to several kHz, vibration isolation, force-free rotation, and unbalance cancellation. This paper surveys various control concepts for AMBs and discusses their advantages and disadvantages. Theoretical and experimental results are presented.

Siegwart, Roland↗
NASA NTRS1991

Dual ion beam processed diamondlike films for industrial applications

Single and dual beam ion source systems are used to generate amorphous diamondlike carbon (DLC) films, which were evaluated for a variety of applications including protective coatings on transmitting materials, power electronics as insulated gates and corrosion resistant barriers. A list of the desirable properties of DLC films along with potential applications are presented.

Mirtich, M. J.↗
NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗
NASA NTRS1980

Reference System Description

Several candidate antenna configurations are evaluated in terms of weight, efficiency, and structural rigidity. Particular emphasis is given to the waveguide slot array and its application to solar power satellites SPS. The electronic aspects of an SPS specific waveguide slot array are defined.

Lunden, C. D.↗
NASA NTRS1995

Space environmental effects on spacecraft: LEO materials selection guide, part 2

This document provides performance properties on major spacecraft materials and subsystems that have been exposed to the low-Earth orbit (LEO) space environment. Spacecraft materials include metals, polymers, composites, white and black paints, thermal-control blankets, adhesives, and lubricants. Spacecraft subsystems include optical components, solar cells, and electronics. Information has been compiled from LEO short-term spaceflight experiments (e.g., space shuttle) and from retrieved satellites of longer mission durations (e.g., Long Duration Exposure Facility). Major space environment effects include atomic oxygen (AO), ultraviolet radiation, micrometeoroids and debris, contamination, and particle radiation. The main objective of this document is to provide a decision tool to designers for designing spacecraft and structures. This document identifies the space environments that will affect the performance of materials and components, e.g., thermal-optical property changes of paints due to UV exposures, AO-induced surface erosion of composites, dimensional changes due to thermal cycling, vacuum-induced moisture outgassing, and surface optical changes due to AO/UV exposures. Where appropriate, relationships between the space environment and the attendant material/system effects are identified. Part 2 covers thermal control systems, power systems, optical components, electronic systems, and applications.

Silverman, Edward M.↗
NASA NTRS2004

Brush/Fin Thermal Interfaces

Brush/fin thermal interfaces are being developed to increase heat-transfer efficiency and thereby enhance the thermal management of orbital replaceable units (ORUs) of electronic and other equipment aboard the International Space Station. Brush/fin thermal interfaces could also be used to increase heat-transfer efficiency in terrestrial electronic and power systems. In a typical application according to conventional practice, a replaceable heat-generating unit includes a mounting surface with black-anodized metal fins that mesh with the matching fins of a heat sink or radiator on which the unit is mounted. The fins do not contact each other, but transfer heat via radiation exchange. A brush/fin interface also includes intermeshing fins, the difference being that the gaps between the fins are filled with brushes made of carbon or other fibers. The fibers span the gap between intermeshed fins, allowing heat transfer by conduction through the fibers. The fibers are attached to the metal surfaces as velvet-like coats in the manner of the carbon fiber brush heat exchangers described in the preceding article. The fiber brushes provide both mechanical compliance and thermal contact, thereby ensuring low contact thermal resistance. A certain amount of force is required to intermesh the fins due to sliding friction of the brush s fiber tips against the fins. This force increases linearly with penetration distance, reaching ~1 psi (~6.9 kPa) for full 2-in. (5.1 cm) penetration for the conventional radiant fin interface. Removal forces can be greater due to fiber buckling upon reversing the sliding direction. This buckling force can be greatly reduced by biasing the fibers at an angle perpendicularly to the sliding direction. Means of containing potentially harmful carbon fiber debris, which is electrically conductive, have been developed. Small prototype brush/fin thermal interfaces have been tested and found to exhibit temperature drops about onesixth of that of conventional meshing-fin thermal interface, when fabricated as a retrofit. In this case, conduction through the long, thin metal fins themselves becomes a thermal bottleneck. Further improvement could be made by prescribing aluminum fins to be shorter and thicker than those of the conventional meshing-fin thermal interfaces; the choice of height and thickness would be optimized to obtain greater overall thermal conductance, lower weight, and lower cost.

Knowles, Timothy R.↗