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At least 55 records · Page 3

Hybrid magnon-phonon localization enhances function near ferroic glassy states

Ferroic materials on the verge of forming ferroic glasses exhibit heightened functionality that is often attributed to competing long- and short-range correlations. However, the physics underlying these enhancements is not well understood. The Ni 45 Co 5 Mn 36.6 In 13.4 Heusler alloy is on the edge of forming both spin and strain glasses and exhibits magnetic field–induced shape memory and large magnetocaloric effects, making it a candidate for multicaloric cooling applications. We show using neutron scattering that localized magnon-phonon hybrid modes, which are inherently spread across reciprocal space, act as a bridge between phonons and magnons and result in substantial magnetic field–induced shifts in the phonons, triple the caloric response, and alter phase stability. We attribute these modes to the localization of phonons and magnons by antiphase boundaries coupled to magnetic domains. Because the interplay between short- and long-range correlations is common near ferroic glassy states, our work provides general insights on how glassiness enhances function.

36 MATERIALS SCIENCE↗

In situ atomic-resolution imaging of water vapor–driven multistep oxidation dynamics in strontium cobaltite

Understanding how water vapor interacts with transition metal oxides (TMOs) is critical for tailoring material properties to improve performance and enable new technologies. Despite extensive research efforts, atomic-scale mechanisms underpinning dynamic reactions and reaction-induced phase transitions remain elusive. Here, we use in situ environmental transmission electron microscopy to investigate how water vapor oxidizes vacancy-ordered SrCoO 2.5 at moderately elevated temperatures, demonstrating that water molecules can initiate oxidation more effectively than oxygen under comparable conditions. We discover a distinct “staging” behavior during the oxidation process: A fully ordered intermediate phase, SrCoO 2.75 , forms before transitioning into a near-perovskite SrCoO 3−δ . In addition, antiphase boundaries, originating at step terraces of SrTiO 3 , alleviate strain by creating reversible nanoscale “gaps” during lattice contraction under oxidation, providing a pathway for preserving structural integrity throughout redox cycling. This work provides atomic-level guidance for engineering TMOs by leveraging water vapor to control their redox behavior and tailor functional properties.

Science & Technology - Other Topics↗

Ductility and fracture in B2 FeAl alloys

The mechanical behavior of B2FeAl alloys was studied. Stoichiometric Fe-50Al exhibits totally brittle behavior while iron-rich Fe-40Al yields and displays about 3% total strain. This change in behavior results from large decreases in the yield strength with iron-rich deviations from stoichiometry while the fracture stress remains essentially constant. Single crystal studies show that these yield strength decreases are directly related to decreases in the critical resolved shear stress for a group of zone axes /111/ set of (110) planes slip. This behavior is rationalized in terms of the decrease in antiphase boundary energy with decreasing aluminum content. The addition of boron results in improvements in the mechanical behavior of alloys on the iron-rich side of stoichiometry. These improvements are increased brittle fracture stresses of near-stoichiometric alloys, and enhanced ductility of up to 6% in Fe-40Al. These effects were attributed to increased grain boundary adhesion as reflected by changes in fracture mode from intergranular to transgranular failure. The increases in yield strength, which are observed in both polycrystals and single crystals, result from the quenching in of large numbers of thermal vacancies. Hall-Petch plots show that the cooling rate effects are a direct result of changes in the Hall-Petch intercept/lattice resistance flow.

Crimp, Martin A.↗

Two applications of axion electrodynamics

The equations of axion electrodynamics are studied. Variations in the axion field can give rise to peculiar distributions of charge and current. These effects provide a simple understanding of the fractional electric charge on dyons and of some recently discovered oddities in the electrodynamics of antiphase boundaries in PbTe. Some speculations regarding the possible occurrence of related phenomena in other solids are presented.

Wilczek, Frank↗

Streaking images that appear only in the plane of diffraction in undoped GaAs single crystals: Diffraction imaging (topography) by monochromatic synchrotron radiation

Streaking images restricted to the direction of the diffraction (scattering) vector have been observed on transmission through undoped GaAs. These disruption images (caused by the reduction of diffraction in the direction of observation) appear both in the forward and in Bragg diffracted directions in monochromatic synchrontron radiation diffraction imaging. This previously unobserved phenomenon can be explained in terms of planar defects (interfaces) or platelets which affects the absorption coefficient in anomalous transmission. Such regions of the crystal look perfect despite the presence of imperfections when the scattering vector is not perpendicular to the normal of the platelets. The observed crystallographic orientation of these interfaces strongly indicates that they are antiphase boundaries.

Kuriyama, Masao↗

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗

Cu-Au Alloys Using Monte Carlo Simulations and the BFS Method for Alloys

Semi empirical methods have shown considerable promise in aiding in the calculation of many properties of materials. Materials used in engineering applications have defects that occur for various reasons including processing. In this work we present the first application of the BFS method for alloys to describe some aspects of microstructure due to processing for the Cu-Au system (Cu-Au, CuAu3, and Cu3Au). We use finite temperature Monte Carlo calculations, in order to show the influence of 'heat treatment' in the low-temperature phase of the alloy. Although relatively simple, it has enough features that could be used as a first test of the reliability of the technique. The main questions to be answered in this work relate to the existence of low temperature ordered structures for specific concentrations, for example, the ability to distinguish between rather similar phases for equiatomic alloys (CuAu I and CuAu II, the latter characterized by an antiphase boundary separating two identical phases).

Bozzolo, Guillermo↗

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗

Development Of A Novel Discontinuously-Reinforced Aluminum For Space Applications

Discontinuously-reinforced aluminum (DRA) has been used in aerospace structures such as Ventral Fins and Fan Exit Guide Vanes owing to its superior specific stiffness, specific strength, wear resistance, and thermal resistance as compared to the unreinforced aluminum alloys. In order to reduce engine weight, DRA materials are now being considered for space applications. Higher specific strength at ambient and cryogenic temperatures is one of the main requirements in certain rocket applications. The commercial DRA materials use 6xxx and 2xxx precipitation hardened aluminum alloys as matrices which have limited strengths. Therefore, an aluminum alloy which can provide significantly higher ambient and cryogenic strengths is required. In this paper, a novel aluminum alloy based on Al-Sc-X composition with improved ambient and cryogenic temperature strengthening capability is proposed. In addition, this alloy showed promise for improved strength at elevated temperature. The monolithic alloy and the composite with 15 volume percent SiC and B4C particles were processed using a powder metallurgy approach. The influence of processing parameters on the microstructures and mechanical properties of the monolithic and composite materials is discussed. The alloy showed very high strength and moderate ductility. The influence of hydrogen on the properties of monolithic and composite materials is discussed. The thermal stability of these materials is also evaluated. The strength of the material is discussed in terms of solid solution strengthening, Orowan strengthening, and antiphase boundary strengthening models.

Pandey, A. B.↗

Structural anomalies in undoped Gallium Arsenide observed in high resolution diffraction imaging with monochromatic synchrotron radiation

Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

Steiner, B.↗

Structural anomalies in undoped gallium arsenide observed in high-resolution diffraction imaging with monochromatic synchrotron radiation

Novel, streak-like disruption features restricted to the plane of diffraction have recently been observed in images obtained by synchrotron radiation diffraction from undoped, semi-insulating gallium arsenide crystals. These features were identified as ensembles of very thin platelets or interfaces lying in (110) planes, and a structural model consisting of antiphase domain boundaries was proposed. We report here the other principal features observed in high resolution monochromatic synchrotron radiation diffraction images: (quasi) cellular structure; linear, very low-angle subgrain boundaries in (110) directions, and surface stripes in a (110) direction. In addition, we report systematic differences in the acceptance angle for images involving various diffraction vectors. When these observations are considered together, a unifying picture emerges. The presence of ensembles of thin (110) antiphase platelet regions or boundaries is generally consistent not only with the streak-like diffraction features but with the other features reported here as well. For the formation of such regions we propose two mechanisms, operating in parallel, that appear to be consistent with the various defect features observed by a variety of techniques.

Steiner, B.↗

4D-STEM Coupled with Unsupervised Machine Learning to Reveal at Large-Scale the Microstructural Evolution in Li- and Mn-Rich Cathodes

Li- and Mn-rich (LMR) layered oxides are known to exhibit a thin surface reconstruction layer, which grows during electrochemical cycling in a manner that depends on exposed crystallographic facets, cycling conditions, and electrolyte chemistry. Direct characterization of this layer has traditionally relied on high-resolution electron microscopy, which is inherently limited to small fields of view. Here, we employ four-dimensional scanning transmission electron microscopy (4D-STEM) combined with unsupervised machine-learning clustering to quantitatively map phase distributions over large areas and track their evolution in LMR cathodes during electrochemical aging. Our results show that the surface reconstruction layer consists predominantly of a rocksalt phase, whose thickness varies across different facets following activation cycling and becomes substantially thicker and more uniform during calendar aging. In contrast, a spinel-like phase is observed within the particle bulk. Large-area phase mapping and correlative high-resolution imaging reveal that this spinel-like phase preferentially nucleates at bulk crystallographic defects, including boundaries between 60°-rotated layered domains and associated mixed-phase regions, rather than exclusively at the particle surface. Our findings establish a mechanistic distinction between surface-driven rocksalt formation and bulk-defect-mediated spinel nucleation while demonstrating the unique capability of 4D-STEM to provide statistically robust, mesoscale insight into complex phase-evolution processes in LMR cathodes.

4D-STEM↗

Unraveling the dislocation–precipitate interactions in high-entropy alloys

The precipitates play a significant role in not only enhancing the strength, but also maintaining the high toughness in alloys. However, the interactions of the nanoscale precipitates with dislocations in the high entropy alloys (HEAs) are difficult to observe directly by in-situ TEM experiments due to the limits of the resolution and time. Here, using atomic simulations we report the synergistic strengthening of the coherent precipitate and atomic-scale lattice distortion in the HEAs at cryogenic/elevated temperatures. The effects of temperature, chemical disorder, precipitate spacing, precipitate size, elemental segregation, and dislocation-cutting number on the critical stress for the dislocation to overcome a row of precipitates are studied. A random stacking fault energy landscape along the slip plane, the lattice distortion at different temperatures, and the interface/surface energy at various crystallographic orientations are obtained. Compared with the traditional metals and alloys, HEAs have the severe atomic-scale lattice distortions to generate the local high tensile/compressive stress fields. This complex stress causes the dislocation line to bend, and thus improves the dislocation slip resistance, resulting in the strong solid-solution strengthening. The stacking fault strengthening induced by the obvious difference of the stacking fault energies between the HEA matrix and precipitate (within the inner of the HEA matrix), and the formation of the antiphase domain boundary contribute to the high strength. The precipitate embedded by the solute atoms produces the strong lattice distortion to enhance the dislocation slip resistance at high temperatures. Hence, the current results provide the mechanistic insight into the phenomenon that the coherent precipitate combined with the severe atomic-scale lattice distortion can enhance the strength at cryogenic/elevated temperatures to further broaden the scope of applications of advanced HEAs.

36 MATERIALS SCIENCE↗

Electron-optical observations of ordered FeNi in the Estherville meteorite

Electron optical studies of the ordered FeNi (taenite) phase in the Estherville meteorite are reported. A thin section of the meteorite containing a large area of continuous anisotropic taenite was studied by crossed polar reflected light microscopy, and electron probe microanalysis, transmission electron microscopy, scanning transmission electron microscopy and X-ray energy dispersive spectrometry. Results reveal the presence of preferentially ion-etched regions of clear taenite corresponding to single crystals, with superlattice reflections in the fundamental FeNi reciprocal lattice arising from long-range ordering. The presence of antiphase domain boundaries within the regions also confirms the presence of ordering. It is thus proposed that clear taenite in the Estherville meteorite contains regions of ordered FeNi phase in a disordered gamma-phase matrix.

Mehta, S.↗

Microstructure of Al2O3 scales formed on NiCrAl alloys

The structure of transient scales formed on pure and Y or Zr-doped Ni-15Cr-13Al alloys oxidized for 0.1 hr at 1100 C was studied by the use of transmission electron microscopy. Crystallographically oriented scales were found on all three alloys, but especially for the Zr-doped NiCrAl. The oriented scales consisted of alpha-(Al,Cr)2O3, Ni(Al,Cr)2O4 and gamma-Al2O3. They were often found in intimate contact with each other such that the close-packed planes and directions of one oxide phase were aligned with those of another. The prominent structural features of the oriented scales were approximately equal to micrometer subgrains; voids, antiphase domain boundaries and aligned precipitates were also prevalent. Randomly oriented alpha-Al2O3 was also found and was the only oxide ever observed at the immediate oxide metal interface. These approximately 0.15 micrometer grains were populated by intragranular voids which decreased in size and number towards the oxide metal interface. A sequence of oxidation was proposed in which the composition of the growing scale changed from oriented oxides rich in Ni and Cr to oriented oxides rich in Al. At the same time the structure changed from cubic spinels to hexagonal corundums with apparent precipitates of one phase in the matrix of the other. Eventually randomly oriented pure alpha-Al2O3 formed as the stable oxide with an abrupt transition: there was no gradual loss of orientation, no gradual compositional change or no gradual decrease in precipitate density.

Smialek, J. L.↗

Field-induced orientation of nonlevitated microcrystals of superconducting YBa2Cu3O(7-x)

X-ray diffraction patterns of superconducting YBa2Cu3O(7-x) particles which have typical dimensions D of less than 5 microns and do not levitate in an inhomogeneous magnetic field at T less than Tc show marked evidence of particle alignment when powder specimens are subjected to a 0.5-T field at T less than Tc, but reveal random orientation for T greater than Tc. A majority of the particles align preferentially with their antiphase twin boundary planes and a-b planes along the applied field, but a minority align with their b axes along the field.

Solin, S. A.↗

Deep-level dominated electrical characteristics of Au contacts on beta-SiC

Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

Das, K.↗

Nucleation and Antiphase Twin Control in Bi 2 Se 3 via Step‐Terminated Al 2 O 3 Substrates

The epitaxial synthesis of high-quality 2D layered materials is an essential driver of both fundamental physics studies and technological applications. Bi 2 Se 3 , a prototypical 2D layered topological insulator, is sensitive to defects imparted during the growth, either thermodynamically or due to the film-substrate interaction. Here, in this study, it is shown that step-terminated Al 2 O 3 substrates with a high miscut angle (3°) can effectively suppress a particular hard-to-mitigate defect, the antiphase twin. Systematic investigations across a range of growth temperatures and substrate miscut angles confirm that atomic step edges act as preferential nucleation sites, stabilizing a single twin domain. First-principles calculations suggest that there is a significant energy barrier for twin boundary formation at step edges, supporting the experimental observations. Detailed structural characterization indicates that this twin-selectivity is lost through the mechanism of the 2D layers overgrowing the step edges, leading to higher twin density as the thickness increases. These findings highlight the complex energy landscape unique to 2D materials that is driven by the interplay between substrate properties, nucleation dynamics, and defect formation, and overcoming and controlling these are critical to improve material quality for quantum and electronic applications.

36 MATERIALS SCIENCE↗