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At least 55 records · Page 3

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗

III-V photocathode with nitrogen doping for increased quantum efficiency

An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

James, L. W.↗

Research into the feasibility of metal- and oxide-film capacitors

Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The materials were aluminum electrodes of 1200 to 1500 angstrom thickness and silica dielectric layers of 3000 to 6000 angstrom thickness. The best electrical characteristics were capacitances of nearly 0.1 microfarad for an active area of 1.25 square centimeters, dissipation factor of less than 0.01 over a frequency range of 0.5 to 100 kilohertz and energy density of approximately 70 millijoules per cubic centimeter of active deposited material at a working voltage of 40 volts. These aluminum-silica capacitors exhibit excellent electrical stability over a temperature range from -55 C to +300 C.

Jorgenson, G. V.↗

Hybrid Damping System for an Electronic Equipment Mounting Shelf

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-11. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Voracek, David↗

Hybrid Damping System for an Electronic Equipment Mounting Shelf

The objective of this study was to design and construct a vibration control system for an electronic equipment shelf to be evaluated in the NASA Dryden FTF-II. The vibration control system was a hybrid system which included passive and active damping techniques. Passive damping was fabricated into the equipment shelf using ScothDamp(trademark) damping film and aluminum constraining layers. Active damping was achieved using a two channel active control circuit employing QuickPack(trademark) sensors and actuators. Preliminary Chirp test results indicated passive damping smoothed the frequency response while active damping reduced amplitudes of the frequency response for most frequencies below 500Hz.

Voracek, David↗

Nanotube Film Electrode and an Electroactive Device Fabricated with the Nanotube Film Electrode and Methods for Making Same

Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Kang, Jin Ho↗

Methods for Making an Electroactive Device Fabricated with a Nanotube Film Electrode

Disclosed is a single wall carbon nanotube (SWCNT) film electrode (FE), all-organic electroactive device systems fabricated with the SWNT-FE, and methods for making same. The SWCNT can be replaced by other types of nanotubes. The SWCNT film can be obtained by filtering SWCNT solution onto the surface of an anodized alumina membrane. A freestanding flexible SWCNT film can be collected by breaking up this brittle membrane. The conductivity of this SWCNT film can advantageously be higher than 280 S/cm. An electroactive polymer (EAP) actuator layered with the SWNT-FE shows a higher electric field-induced strain than an EAP layered with metal electrodes because the flexible SWNT-FE relieves the restraint of the displacement of the polymeric active layer as compared to the metal electrode. In addition, if thin enough, the SWNT-FE is transparent in the visible light range, thus making it suitable for use in actuators used in optical devices.

Kang, Jin Ho↗

AlGaAs/GaAs transverse junction stripe lasers with distributed feedback

Transverse junction stripe (TJS) lasers with periodic feedback were fabricated in two geometries. An interferometric and wet chemical etching technique was used to create a feedback grating across the entire pumping region for the distributed feedback (DFB) TJS laser and to create the separate distributed Bragg reflectors/DBR) for the TJS/DBR laser. The TJS/DFB laser was a double heterostructure device grown by liquid phase epitaxy (LPE) and had a third order grating etched in the top ALO.2GaO.8As layer. The grating was buried by growing an ALO.35GaO.65As layer on the grating by metal organic chemical vapor deposition (MO-CVD). The TJS/DBR laser was also fabricated in an LPE double heterostructure. The top AlGaAs layer was thinned to 0.1 micron over more than half of the laser so that the grating would be close to the GaAs active layer and optical field. Single mode operation in both configurations was obtained. The thermal shift of the laser wavelength in both cases was less than 1 Angstrom/deg K, compared to the 3 Angstrom/deg K shift of the spontaneous emission peak.

Hafich, M. J.↗

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Larsson, Anders↗

Freeze-Thaw Cycling as a Chemical Weathering Agent on a Cold and Icy Mars

Liquid water was abundant on early Mars, but whether the climate was warm and wet or cold and icy with punctuated periods of melting is still poorly understood. Modern climate models for Mars tend to predict a colder, icier early climate than previously imagined. In addition, ice and glaciation have been major geologic agents throughout the later Hesperian and Amazonian eras. One process that can act in such climates is repeated freezing and thawing of water on the surface and in the subsurface, and is significant because it can occur anywhere with an active layer and could have persisted for a time after liquid water was no longer stable on Mars’ surface. As freeze-thaw is the dominant mechanical weathering process in most glacial/periglacial terrains, it was likely a significant geomorphologic driver at local to regional scales during past climates, and would potentially have been most active when day-average surface temperatures exceeded 0 °C for part of the year. Indeed, freeze-thaw involving liquid water in the Amazonian is evidenced by abundant geomorphic features including polygonal ground and solifluction lobes requiring seasonal thawing. In addition to physical modification, freezing can drive solutions towards supersaturation and force dissolved solutes out as precipitates. In Mars-like terrains, dissolved solutes are typically dominated by silica. In polar regions on Earth, freeze-thaw cycles have been shown to promote deposition of silica, and freeze-thaw experiments on synthetic solutions found stable amorphous silica that built up over multiple cycles. Freeze-thaw may therefore be an important but overlooked chemical weathering process on Mars. However, our ability to assess its impact on alteration of martian terrains is majorly limited by the current lack of understanding of the alteration phases produced (and formation rates) under controlled freeze-thaw weathering of Mars-relevant materials. To address this knowledge gap, we report results from (1) freeze-thaw weathering products found at a glacial Mars analog site at the Three Sisters, Oregon, and (2) new controlled freeze-thaw experiments on basaltic material.

Scudder, N. A.↗

High power density proton exchange membrane fuel cells

Proton exchange membrane (PEM) fuel cells use a perfluorosulfonic acid solid polymer film as an electrolyte which simplifies water and electrolyte management. Their thin electrolyte layers give efficient systems of low weight, and their materials of construction show extremely long laboratory lifetimes. Their high reliability and their suitability for use in a microgravity environment makes them particularly attractive as a substitute for batteries in satellites utilizing high-power, high energy-density electrochemical energy storage systems. In this investigation, the Dow experimental PEM (XUS-13204.10) and unsupported high platinum loading electrodes yielded very high power densities, of the order of 2.5 W cm(exp -2). A platinum black loading of 5 mg per cm(exp 2) was found to be optimum. On extending the three-dimensional reaction zone of fuel cell electrodes by impregnating solid polymer electrolyte into the electrode structures, Nafion was found to give better performance than the Dow experimental PEM. The depth of penetration of the solid polymer electrolyte into electrode structures was 50-70 percent of the thickness of the platinum-catalyzed active layer. However, the degree of platinum utilization was only 16.6 percent and the roughness factor of a typical electrode was 274.

Murphy, Oliver J.↗

Mass transport mechanism in porous fuel cell electrodes

Results of experiments on hydrogen-oxygen fuel cells show that higher current densities are obtained with cell anodes having a 100 micron thin active layer of porous nickel containing silver electrocatalyst. Increase in current density is attributed to a convective mass transport mechanism.

Jonsson, I.↗

A CW Gunn diode bistable switching element

A current-controlled bistable switching element using a CW Gunn diode is reported. Switching rates of the order of 10 MHz were obtained with modest circuits. Switching was initiated by current pulses of short duration (5 to 10 nsec). Rise times of the order of several nanoseconds could be obtained. The apparent mechanism which permits the bistable operation of the Gunn diode is the reduction in the mobility of the GaAs active layer due to heating of the device.

Hurtado, M.↗

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗