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At least 55 records · Page 3

Ex Situ Photoelectron Emission Microscopy of Polycrystalline Bismuth and Antimony Telluride Surfaces Exposed to Ambient Oxidation

The surfaces of textured polycrystalline N-type bismuth telluride and P-type antimony telluride materials were investigated using ex situ photoelectron emission microscopy (PEEM). PEEM enabled imaging of the work function for different oxidation times due to exposure to air across sample surfaces. The spatially averaged work function was also tracked as a function of air exposure time. N-type bismuth telluride showed an increase in the work function around grain boundaries relative to grain interiors during the early stages of air exposure-driven oxidation. At longer time exposure to air, the surface became homogenous after a ~5 nm-thick oxide formed. X-ray photoemission spectroscopy was used to correlate changes in PEEM imaging in real space and work function evolution to the progressive growth of an oxide layer. The observed work function contrast is consistent with the pinning of electronic surface states due to the defects at a grain boundary.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Growth Dynamics and Electron Reflectivity in Ultrathin Films of Chiral Heptahelicene on Metal (100) Surfaces Studied by Spin-Polarized Low Energy Electron Microscopy

Interaction of electrons with chiral matter gives rise to interesting phenomena such as the chirality-induced spin selectivity. The interdependence of reflectivity of spin-polarized low energy electrons and the absolute handedness of chiral molecules is investigated. First, the growth of homochiral films of helical aromatic hydrocarbons, so-called helicenes, on a Cu(100) surface is studied by means of low energy electron microscopy and scanning tunneling microscopy in ultrahigh vacuum. As soon as the coverage exceeds one monolayer, double-layer nucleation and growth is favored such that depletion in the first layer occurs. Spatially resolved work function measurements show that second-layer patches have a lower work function than first-layer areas. Reflectivity spectra of spin-polarized electrons do not show any asymmetry between homochiral films of the enantiomers. Laterally resolved work function measurements do not confirm work function differences such as those reported earlier for photoelectron studies of chiral peptide films on ferromagnetic substrates.

36 MATERIALS SCIENCE↗

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗

Interaction mechanism of transition metal phthalocyanines on transition metal nitride supports

Here, we investigated the electronic interactions between transition metal phthalocyanine (TMPc’s) on a refractory transition metal nitride support, specifically copper phthalocyanine (CuPc) on titanium nitride (TiN). X-ray Photoelectron Spectroscopy (XPS) results suggest a presence of a few nanometer native oxide layer on the surface of the TiN nanoparticles, which consists of TiN, TiO 2 , and Titanium oxynitrides (Ti x O y N z ). A TiNCuPc nanocomposite was synthesized via a simple mixing method due to the strong binding between CuPc and TiN confirmed by density functional theory (DFT) calculations. Both XPS data and DFT calculations revealed an electron transfer from TiN substrate to CuPc molecule. The nature of charge transfer is not influenced by the presence of an oxide layer on the surface of TiN. Substantial deviations are however found between photoelectron emission microscopy (PEEM) measured work function for TiN (4.68 eV) and theoretically calculated work function for pristine stoichiometric TiN (2.63 eV). This behavior is attributed to the presence of an oxide layer on the TiN surface. TiNCuPc composite system has a work function value between those of TiN and CuPc. Our studies open up an opportunity to apply a new class of materials based on transition metal phthalocyanine/transition metal nitride composites to catalysis and optoelectronic devices.

36 MATERIALS SCIENCE↗

Stronger field-emission science via coupling novel nanoscale imaging techniques

We implemented a vacuum field emission electron microscope (FEM) using the electron optics of a low-energy /photoemission electron microscope (LEEM/PEEM). Historically, there have been other FEM hardware platforms, and the distinctive feature of our method is that it integrates with the LEEM/PEEM and associated techniques, enabling a powerful multi-capability toolset for studying fundamental materials properties underpinning field emission (FE) and vacuum arc initiation. Typically, LEEM is used to image surface structure, which influences both work function and electric field distribution near a surface, while PEEM is used to map photoelectric work function across a surface. Our FEM adds the capability for spatially-correlated coincident-site measurements of FE currents to go-along with structure and work function. LEEM, PEEM, and our FEM implementation achieve nanoscale spatial resolution relevant for materials studies in nanoscience/engineering. Our approach requires a straightforward calibration of the electron optics to enable focused FEM imaging under intentional electric field variation. We demonstrate the FEM approach by imaging field emitter arrays relevant for vacuum nanoelectronics. We demonstrate submicron spatial resolution and dynamic measurement of FE versus applied electric field. We anticipate this capability will enable fundamental structure-function studies of FE and arc initiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Pick-and-Place Transfer of Arbitrary-Metal Electrodes for van der Waals Device Fabrication

Van der Waals electrode integration is a promising strategy to create nearly perfect interfaces between metals and 2D materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. Here, we demonstrate the pick-and-place transfer of prefabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any sacrificial layers due to the inherent low-energy and dangling-bond-free nature of the hydrogenated diamond surface. The technique enables transfer of arbitrary-metal electrodes and an electrode array, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. We also demonstrate the electrode array transfer for large-scale device fabrication. The mechanical transfer of metal electrodes from diamond to van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-section high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semimetal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to air-sensitive materials (trilayer 1T’ WTe 2 ) and other applications such as ambipolar transistors, Schottky diodes, and optoelectronics. This highly reliable and reproducible technology paves the way for new device architectures and high-performance devices.

2D materials↗

Elucidating the Influence of Residual Polymer and Gas Environment on the Electronic Structure of a Graphene Layer Using in Situ APXPS

We use in situ ambient pressure X-ray photoelectron spectroscopy (APXPS) and ultraviolet photoelectron spectroscopy (UPS) to develop an effective method for studying changes in the graphene (Gr) electronic structure according to certain circumstance. The amount of polymethyl methacrylate (PMMA) residual polymer (RP), inevitably generated during the Gr transfer process, is significantly reduced from Gr surface by thermal annealing. This processed Gr is then sequentially exposed to specific gas environments (Ar, N 2 , O 2 , and CO 2 ), and APXPS or UPS is carried out to investigate the variations in the Gr electronic structure including the work function. When the amount of PMMA RP on Gr is reduced, the position of the main carbon peak shifts by more than 0.4 eV to a higher binding energy (in XPS spectra), and the secondary electron cutoff moves by about 0.2 eV to a lower binding energy (in UPS spectra). These changes are generally caused by a decrease in the Gr work function. On the other hand, exposure to the gas environments at different temperatures that we investigated did not produce significant changes in the work function and chemical states of Gr. These results confirm that the material in contact with Gr should be considered to achieve the desired Gr performance in electronics.

36 MATERIALS SCIENCE↗

Comment on “Tunneling-tip-induced collapse of the charge gap in the excitonic insulator Ta 2 NiSe 5 ”

In this study, we investigate the discrepancy between the estimate of Q. He [], who observed a remarkable collapse of the exciton gap in Ta 2 NiSe 5 due to the electrostatic field between the scanning tunneling microscope (STM) tip and the sample, and that of a recent angle-resolved photoemission spectroscopy investigation [C. Chen , ]. It is proposed that a critical factor contributing to this discrepancy is due to He 's assumption of a constant work function of the STM tip. This assumption led to an underestimation of the tip-induced electric field. Using a literature value for the sample work function, a more substantial electric field strength is obtained, which resolves the apparent conflict between the doping estimates of these two techniques. Furthermore, our findings highlight the importance of the STM tip condition, which can significantly impact the tip work function and, consequently, influence the doping estimation in experiments involving tip-induced electric fields. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spacecraft surface charging as a function of material properties

Spacecraft material behavior plays a very important role in space missions. Spacecraft immersed in plasma get charged by absorbing plasma particles and by emitting electrons from spacecraft surfaces via photoelectron and secondary electron emission. Spacecraft charging depends heavily on material properties such as work function, secondary electron yield, dielectric constant, and electric conductivity among other. Material properties are typically assumed to be static in charging models. However, it is well known that this is not the case in space. This makes spacecraft charging predictions very challenging. Material properties are well characterized before the spacecraft is put in orbit through characterization in the lab under clean conditions. However, once in space, material properties change due to the harsh and very dynamic space environment. We present a new capability to predict material behavior in space from first-principles modeling. The ongoing effort seeks to couple material models, density functional theory (DFT) and molecular dynamic (MD) codes, with environment models, plasma kinetic codes. This preliminary study will show results of surface charging as a function of material work function, dielectric constant, and conductivity.

36 MATERIALS SCIENCE↗

Cesium-Coated Halide Perovskites as a Photocathode Material: Modeling Insights

Photocathodes emit electrons when illuminated, a process utilized across many technologies. Cutting-edge applications require a set of operating conditions that are not met with current photocathode materials. Meanwhile, halide perovskites have been studied extensively and have shown a lot of promise for a wide variety of optoelectronic applications. Well-documented halide perovskite properties such as inexpensive growth techniques, improved carrier mobility, low trap density, and tunable direct band gaps make them promising candidates for next-generation photocathode materials. In this study, we use density functional theory to explore the possible application of pure inorganic perovskites (CsPbBr 3 and CsPbI 3 ) as photocathodes. It is determined that the addition of a Cs coating improved the performance by lowering the work function anywhere between 1.5 and 3 eV depending on the material, crystal surface, and surface coverage. A phenomenological model, modified from that developed by Gyftopoulos and Levine, is used to predict the reduction in work function with Cs coverage. The results of this work aim to guide the further experimental development of Cs-coated halide perovskites for photocathode materials.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Molecular dopants: Tools to control the electronic structure of metal halide perovskite interfaces

In the standard configurations of metal halide perovskite solar cell, the active layer, or absorber, follows a p-i-n or n-i-p electronic structure that is designed to enhance the separation and extraction of photo-induced charge carriers. The control of the Fermi level position across the film, between electron and hole transport layers, is therefore of paramount importance. Direct localized doping in metal halide perovskites being still elusive, the design of n-i-p and p-i-n structures has so far relied predominantly on surface and interface doping of the perovskite as well as on the control of the work function of the substrate and transport layers on which, or between which, the absorber is being placed. We provide here a short review of that work, emphasizing the fundamental studies of electronic structure performed on systems modified with organic molecular dopants. The review starts with a justification for the effectiveness of interface doping, based on the ability to move the Fermi level across the gap of the perovskite. We then review work done on the deposition of molecular oxidants and reductants on perovskite surfaces, including the mitigation of the surface states, and the impact of these dopants on energy level alignment with substrate and charge transport layers. The second part of the review focuses on the use of molecular dopants to either modify the work function of electron or hole transport layers to establish the boundary conditions for a p-i-n or n-i-p structure, or to enhance the conductivity of these layers in order to facilitate charge carrier extraction. Final considerations are also given on recent work on bulk doping of the perovskite layer with molecular dopants.

14 SOLAR ENERGY↗

Selective oxidation and nickel enrichment hinders the repassivation kinetics of multi-principal element alloy surfaces

Robust and sustained corrosion resistance in multi-principal element alloys (MPEA) requires rapid repassivation, i.e. regrowth of the passive layer once it is damaged or destroyed at the surface. In this study, we show that the repassivation of Al 0.1 CrCoFeNi MPEA in 0.6 M NaCl solution is hindered at pH of ~ 2.4 - 6.8 due to the formation of a Ni-enriched subsurface layer as a result of selective oxidation and dissolution of several principal elements, which can be fully restored at pH of ~ 14 from the oxidation of all principal elements. Specifically, surface characterization via X-ray photoelectron spectroscopy (XPS), high-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy (STEM), and atom probe tomography (APT), are coupled with density functional theory (DFT) calculations to determine surface composition, oxidation state, and electron work function to uncover the structural origin of the pH-dependent repassivation mechanisms. It was found that selective oxidation of Cr, Co, and Fe in the acidic to neutral solutions altered the surface composition to be significantly enriched in Ni as compared to the bulk. Once the original passive film is destroyed locally by either pitting or tribocorrosion, this altered surface composition exhibited a much poorer repassivation capability due to the increased electron work function and reduced surface reactivity at higher Ni concentration. Finally, these understandings could shed light on the future compositional design of non-equiatomic MPEAs towards sustained repassivation and corrosion resistance over a wide pH range.

36 MATERIALS SCIENCE↗

Exploring the role of electronic structure on photo-catalytic behavior of carbon-nitride polymorphs

A fully self-consistent density-functional theory (DFT) with improved functionals is used herein to provide a comprehensive account of structural, electronic, and optical properties of C 3 N 4 polymorphs. Using our recently developed van Leeuwen-Baerends (vLB) corrected local-density approximation (LDA), we implemented LDA + vLB within full-potential N th -order muffin-tin orbital (FP-NMTO) method and show that it improves structural properties and band gaps compared to semi-local functionals (LDA/GGA). We demonstrate that the LDA + vLB predicts band-structure and work-function for well-studied 2D-graphene and bulk-Si in very good agreement with experiments, and more exact hybrid functional (HSE) calculations as implemented in the Quantum-Espresso (QE) package. The structural and electronic-structure (band gap) properties of C 3 N 4 polymorphs calculated using FP-NMTO-LDA + vLB is compared with more sophisticated hybrid-functional calculations. We also perform detailed investigation of photocatalytic behavior using QE-HSE method of C 3 N 4 polymorphs through work-function, band (valence and conduction) position with respect to water reduction and oxidation potential. Our results show $γ$-C 3 N 4 as the best candidate for photocatalysis among all the C 3 N 4 polymorphs but it is dynamically unstable at ‘zero’ pressure. We show that $γ$-C 3 N 4 can be stabilized under hydrostatic-pressure, which improves its photocatalytic behavior relative to water reduction and oxidation potentials.

36 MATERIALS SCIENCE↗

Assessment of Blocking Contacts in Suppressing Polarization Effects in CsPbBr 3 Perovskite Detectors

The CsPbBr 3 perovskite has garnered significant attention as a room-temperature semiconductor for hard radiation detection due to straightforward synthesis, scalable crystal growth, low cost, and excellent energy resolution. However, despite these advantages, at ambient temperature, CsPbBr 3 devices may experience performance deterioration and irreversible failure due to “polarization” induced by electromigration of ions to electrical connections on the device. In this study, we tested several contact materials and their optimization deposition techniques to assess the stability of high-performance CsPbBr 3 γ-ray detectors. Metals, with low work functions (Ti, In, Sn, Sb, Pb, Bi, Al, Au, and TiC) and high-work-function (Au or Pt) contacts, were used to form different Schottky junctions using vacuum thermal evaporation, electron-beam evaporation, and sputtering methods. These detectors were tested in intermittent and continuous modes to assess their stability. Among the tested detectors, the Bi/CLB/Pt electrode configuration demonstrated superior stability, operating effectively for 11 months under periodic testing and 16 days under continuous testing. In contrast, other configurations functioned only for a few months under intermittent conditions. Upon incorporating a ~40-nm-thick TiC passivation layer on the anode side (Bi/TiC/CLB/Pt), the CLB device operated continuously for 36 days without degradation. In many cases, the failure mode of the devices was due to the degradation of the anode. Here, the chemical changes in the fresh and deteriorated anodes were characterized using scanning electron microscopy and energydispersive X-ray spectroscopy

CsPbBr3 perovskite↗

Functionalized carbon nanotubes for thermionic emission and cooling applications

Barium strontium oxide-coated carbon nanotubes (CNTs) were implemented as a work function lowering and field enhancing functional coating on a coiled tungsten filament to create a new thermionic cathode. This cathode resembles conventional oxide cathodes in structure. It has the same coiled tungsten filament as a conventional oxide cathode but uses barium strontium oxide-coated CNTs instead of the traditional barium strontium calcium oxide powder mixture as an emissive coating. The cathode produces a strong thermionic emission. At 1395 K and 2.5 V/μm, the thermionic emission current of 0.87 A or current density of 2.9 A/cm 2 was obtained from this oxide-coated CNT cathode. This level of emission is about three times as large as a conventional oxide cathode operating at similar temperature and field strength. Strong thermionic emissions from the cathode also lead to a large thermionic cooling effect. Temperature reduction as large as 90° was observed from the cathode surface when it was emitting electrons. Strong thermionic emission and a large cooling effect obtained are the result of the combination of the low work function of barium strontium oxide (1.6 eV) and the large field effect induced by the CNTs. Plasma enhanced chemical vapor deposition was used to grow CNTs, and magnetron sputtering deposition was used to deposit the barium strontium oxide functional coating; details of the cathode fabrication are presented to illustrate both the versatility of the processing techniques and the adaptability of barium strontium oxide-coated CNTs as a functional coating. Finally, measurements on thermionic emission and thermionic cooling of the cathode are also presented.

36 MATERIALS SCIENCE↗

Photo-Crosslinkable Naphthalene Diimide Polymer for Solution-Processed n – i – p Perovskite Solar Cells

We copolymerize a norbornene monomer bearing a pendant naphthalene diimide with a norbornene bearing a cinnamate pendant moiety to synthesize a crosslinkable electron-transporting polymer and study its use in solution-processed n–i–p perovskite solar cells. The crosslinked material exhibits over 90% transparency in the visible region and higher thermal stability (>300 °C) and lower surface energy than the corresponding homopolymer of the naphthalene diimide functionalized norbornene. Coating an ITO surface with the photo-crosslinked copolymer yields a slightly lower work function than homopolymer-coated ITO. We show that the morphologies of the perovskite films deposited on both polymers are similar (~300 nm features) based upon scanning electron microscopy. Our solar-cell device results show that the crosslinked naphthalene diimide polymer gives a higher open-circuit voltage (1.08 vs 1.05 V), fill factor (average 64.43 vs 58.77%), and stabilized power conversion efficiency (12.28 vs 10.33%) compared to its non-crosslinked homopolymer counterpart, as well as reduced hysteresis. As a result, we attribute the improved performance to decreased work function, reduced nonradiative recombination, and higher shunt resistance.

14 SOLAR ENERGY↗

Structurally Driven Environmental Degradation of Friction in MoS2 Films

Abstract We report an investigation of the friction mechanisms of MoS 2 thin films under changing environments and contact conditions using a variety of computational and experimental techniques. Molecular dynamics simulations were used to study the effects of water and molecular oxygen on friction and bonding of MoS 2 lamellae during initial sliding. Characterization via photoelectron emission microscopy (PEEM) and Kelvin probe force microscopy (KPFM) were used to determine work function changes in shear modified material within the top few nanometers of MoS 2 wear scars. The work function was shown to change with contact conditions and environment, and shown by density functional theory (DFT) calculations and literature reports to be correlated with lamellae size and thickness of the basally oriented surface layer. Results from nanoscale simulations and macroscale experiments suggest that the evolution of the friction behavior of MoS 2 is linked primarily to the formation or inhibition of a basally oriented, molecularly thin surface film with long-range order.

Curry, John F.↗

Multimodal characterization of Te inclusions in Cd 1−x Zn x Te and Cd 1−x Zn x Te 1−y Se y for gamma and X-ray detectors

While CdZnTe (CZT) and CdZnTeSe (CZTS) semiconductors have emerged as compounds for room-temperature gamma and X-ray detection materials, they continue to be constrained by the formation of Te-inclusion defects generated during the growth and post-growth phases of the material, which adversely affect the detector performance. We demonstrate the utility of multimodal microscopic imaging and analysis for the characterization of the optical and electronic properties of Te inclusions in CZT and CZTS crystals at both micron and nanometer length scales. Having first identified regions with micron-scale Te inclusions using confocal Raman microscopy techniques, optically coupled infrared scattering near-field optical microscopic mapping was performed to map the distribution of these inclusions with nanometer spatial resolution and correlate the presence of Te inclusions in the matrix with other properties. Kelvin probe force microscopy was then utilized to characterize the variations of the work function associated with the presence of Te inclusions. Here, we observe an increase of ~ 240 mV in the work function associated with Te inclusions compared to the bulk CZT/CZTS crystals. Additionally, we observe that individual bulk grains in CZT can exhibit slight potential variations. Our findings develop a portrait of the charge trapping mechanisms in CZT and CZTS that act to degrade detector performance, while the demonstration of these combined microscopy techniques provides a new analytical tool that can be utilized for further optimization of the detector performance for these semiconducting compounds.

36 MATERIALS SCIENCE↗