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Results for “Voltage measurement”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Operando Microscopy Characterization of Perovskite Solar Cells

In this work, we developed operando Kelvin probe force microscopy (KPFM) to study the electrostatic potential distribution across perovskite cells under light and forward bias to gain a deeper understanding of device operation physics. As a case study, we selected perovskite cells with a SnO 2 -based electron-selective layer (ESL), which showed great potential for fabricating high-efficiency, hysteresis-free devices due to the deeper conduction band and higher electron mobility of SnO 2 . The as-made device showed a main junction at the perovskite/spiro interface. After light soaking and applying forward bias, the junction quality improved, possibly explained by filling trap states at the interfaces and by the perovskite absorber perhaps having a self-poling effect; the main junction is observed at the ESL/perovskite interface. The results are consistent with current-voltage measurements, device performance improves mainly with fill factor enhancement. The operando KPFM results should more closely reflect the real case during current density-voltage measurements or solar cell operation. The operando KPFM technique that we have developed can be a powerful tool to provide a deeper understanding of the device operation mechanism and to further optimize the device.

14 SOLAR ENERGY↗

Data-Driven Chance-Constrained Design of Voltage Droop Control for Distribution Networks: Preprint

This paper addresses the design of local control methods for voltage control in distribution networks with high level of distributed energy resources (DERs). The designed control methods adapt the active and reactive power output of distributed energy resources proportional to the deviation of the local measured voltage magnitudes from a reference voltage, which is referred to as droop control. Thus, the design focuses on determining the droop characteristics which satisfy network-wide voltage magnitude constraints. The uncertainty and variability of DERs renders the design of optimal droop controls very challenging. Hence, this paper proposes chance constraints to limit the risk from intermittent DERs, by designing droop control coefficients that guarantee the satisfaction of network operational constraints with a specific probability. In addition, the proposed approach relies entirely on historical data rather than assuming knowledge of the probability distributions that characterize the uncertainty of DERs. The efficacy of the proposed method is demonstrated on a 37-bus distribution feeder.

chance-constrained optimization↗

Capaciflector-guided mechanisms

A plurality of capaciflector proximity sensors, one or more of which may be overlaid on each other, and at least one shield are mounted on a device guided by a robot so as to see a designated surface, hole or raised portion of an object, for example, in three dimensions. Individual current-measuring voltage follower circuits interface the sensors and shield to a common AC signal source. As the device approaches the object, the sensors respond by a change in the currents therethrough. The currents are detected by the respective current-measuring voltage follower circuits with the outputs thereof being fed to a robot controller. The device is caused to move under robot control in a predetermined pattern over the object while directly referencing each other without any offsets, whereupon by a process of minimization of the sensed currents, the device is dithered or wiggled into position for a soft touchdown or contact without any prior contact with the object.

Vranish, John M.↗

Impacts of Voltage-Based Grid Support Functions on Energy Production of PV Customers

This paper presents the impact of inverter grid- support functions (GSFs) on photovoltaic (PV) customer energy production on a real distribution feeder in Oahu, HI. These autonomous GSFs based on local voltage measurements are good alternatives to increase PV hosting capacity. However, these functions can result in PV energy curtailment to the customer, and this study addresses the concerns about the impact of inverter GSFs through detailed quasi-static time series (QSTS) simulations. It proposes four metrics: maximum and average GSF curtailment, average increased generation and average net generation change, to assess the impact of a given control on PV systems located on customer sites. It was found that curtailment of PV production is negligible for customers where peak voltage is within ANSI C84.1 range. A reliable relationship between curtailment and peak customer voltage is demonstrated, suggesting that peak voltage could be used as an indicator of customer curtailment.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.

Physics↗

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗

Epitaxial Sc x Al 1- x N on GaN exhibits attractive high-K dielectric properties

Epitaxial Sc x Al 1- x N thin films of ~100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (ε r ) values relative to AlN. ε r values of ~17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that Sc x Al 1- x N has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial Sc x Al 1- x N layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.

36 MATERIALS SCIENCE↗

Fast measurement of MOS capacitors

Method allows flatband voltage measurement of capacitors to be taken quickly and precisely while capacitor is subject to desired conditions.

Bates, E. T., Jr.↗

High-Visibility Data Display

Data-monitoring system continuously senses output voltages from transducers and provides large, easy-to-read displays of quantities represented by voltages. Measurements of power-supply voltages and currents, pressures, temperatures, strains, and masses displayed. System intended to operate 24 hours a day, producing uninterrupted readouts of critical parameters.

Slusser, K.↗

Electrooptic polymer voltage sensor and method of manufacture thereof

An optical voltage sensor utilizing an electrooptic polymer is disclosed for application to electric power distribution systems. The sensor, which can be manufactured at low cost in accordance with a disclosed method, measures voltages across a greater range than prior art sensors. The electrooptic polymer, which replaces the optical crystal used in prior art sensors, is sandwiched directly between two high voltage electrodes. Voltage is measured by fiber optical means, and no voltage division is required. The sample of electrooptic polymer is fabricated in a special mold and later mounted in a sensor housing. Alternatively, mold and sensor housing may be identical. The sensor housing is made out of a machinable polymeric material and is equipped with two opposing optical windows. The optical windows are mounted in the bottom of machined holes in the wall of the mold. These holes provide for mounting of the polarizing optical components and for mounting of the fiber optic connectors. One connecting fiber is equipped with a light emitting diode as a light source. Another connecting fiber is equipped with a photodiode as a detector.

Gottsche, Allan↗

High-Voltage, Low-Power BNC Feedthrough Terminator

This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

Bearden, Douglas↗

Results of module electrical measurement of the DOE 46-kilowatt procurement

Current-voltage measurements have been made on terrestrial solar cell modules of the DOE/JPL Low Cost Silicon Solar Array procurement. Data on short circuit current, open circuit voltage, and maximum power for the four types of modules are presented in normalized form, showing distribution of the measured values. Standard deviations from the mean values are also given. Tests of the statistical significance of the data are discussed.

Curtis, H. B.↗

Power system state estimation for a spacecraft power system

An application of the maximum likelihood state estimator to a space-based power system is presented. The state estimator uses current and voltage measurements to generate estimates of node voltages for an electrical power distribution system for the Space Shuttle. Preliminary results on the effect of noisy measurements on estimated parameters are reported. The software used in generating these results is part of an overall package being developed at Louisiana Tech University. Intended applications of this package include the analysis of power systems and real-time parallel processing on the Space Shuttle.

Berry, F. C.↗

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗

Lightning Instrumentation System

A new comprehensive lightning instrumentation system has been designed for the Mobile Launcher 1 (ML-1) at the Kennedy Space Center, Florida. This new instrumentation system includes the synchronized recording of three B-dot, 3-axis measurement stations, one D-dot sensor and eighteen vehicle measurement channels. Each vehicle measurement channel is comprised of two currents and one voltage measurements. The instrumentation system is composed of centralized transient recorders and digitizers, connected to the transient recorders via fiber optic cables. The transient recorders are triggered by the B-dot or D-dot sensors. When the Space Launch System (SLS) vehicle is present at the ML-1, the transient recorders record data on a dual sampling rate mode, continuous slow 5 kilo-samples per second (per channel) and event driven fast 100 mega-samples per second (per channel). Without the presence of the vehicle at the ML-1, the instrumentation system operates only as an event driven fast 100 mega-samples per second (per channel). In the absence of the vehicle, the only measurements recorded are the B-dot and D-dot stations. Additionally, a portable Lightning Monitoring System (LMS) is temporarily installed inside the Orion Crew Capsule module monitoring one portable B-dot, 3-axis measurement station, and 2 Crew Capsule BUS voltages. The portable LMS has a transient recorder independent of the ML-1 transient recorders, that is triggered by the portable B-dot sensor or transients on the vehicle BUS voltages. This portable instrumentation is removed while performing close out operations before the vehicle launch. For the ML-1 lightning instrumentation system, new custom B-dot and D-dot sensors were designed and prototypes were tested at the International Center for Lightning Research and Testing (ICLRT) at Camp Blanding, Florida. The Ground Special Power (GSP) vehicle measurement channels monitoring on the ML-1 is done via 1) Commercial off-the-shelf (COTS) current shunts and 2) custom Voltage Dividers. The new ML-1 lightning instrumentation system was designed, fabricated, deployed, and tested prior to the summer of 2019, in preparation for the first NASA's SLS mission to be launched from the Launch Complex 39B (LC-39B). The ML-1 lightning instrumentation was designed to complement the LC-39B lightning instrumentation system providing electromagnetic measurements closer to the vehicle, at different heights and inside the Crew capsule module.

Angel G Mata↗

Terrestrial photovoltaic measurement procedures

Procedures for obtaining cell and array current-voltage measurements both outdoors in natural sunlight and indoors in simulated sunlight are presented. A description of the necessary apparatus and equipment is given for the calibration and use of reference solar cells. Some comments relating to concentration cell measurements, and a revised terrestrial solar spectrum for use in theoretical calculations, are included.

Source record↗

Spatial-Temporal Recurrent Graph Neural Networks for Fault Diagnostics in Power Distribution Systems

Fault diagnostics are extremely important to decide proper actions toward fault isolation and system restoration. The growing integration of inverter-based distributed energy resources imposes strong influences on fault detection using traditional overcurrent relays. This paper utilizes emerging graph learning techniques to build new temporal recurrent graph neural network models for fault diagnostics. The temporal recurrent graph neural network structures can extract the spatial-temporal features from data of voltage measurement units installed at the critical buses. From these features, fault event detection, fault type/phase classification, and fault location are performed. Compared with previous works, the proposed temporal recurrent graph neural networks provide a better generalization for fault diagnostics. Moreover, the proposed scheme retrieves the voltage signals instead of current signals so that there is no need to install relays at all lines of the distribution system. Therefore, the proposed scheme is generalizable and not limited by the number of relays installed. The effectiveness of the proposed method is comprehensively evaluated on the Potsdam microgrid and IEEE 123-node system in comparison with other neural network structures.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Constant current loop impedance measuring system that is immune to the effects of parasitic impedances

A constant current loop measuring system is provided for measuring a characteristic of an environment. The system comprises a first impedance positionable in the environment, a second impedance coupled in series with said first impedance and a parasitic impedance electrically coupled to the first and second impedances. A current generating device, electrically coupled in series with the first and second impedances, provides a constant current through the first and second impedances to produce first and second voltages across the first and second impedances, respectively, and a parasitic voltage across the parasitic impedance. A high impedance voltage measuring device measures a voltage difference between the first and second voltages independent of the parasitic voltage to produce a characteristic voltage representative of the characteristic of the environment.

Anderson, Karl F.↗