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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

A reconfigurable gate architecture for Si/SiGe quantum dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots, and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35–70 μeV. By energizing two additional gates, we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure

In this work, we report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing top and bottom gates, allowing the investigation of quantum wells at both imbalanced and matched densities. Integer quantum Hall states at total filling factor v T =1 and v T =2 are observed in both density regimes, and the evolution of their excitation gaps is reported as a function of the density. The v T =1 gap evolution departs from the behavior generally observed for valley splitting in the single layer regime. Furthermore, by comparing the v T =2 gap to the single particle tunneling energy, Δ SAS , obtained from Schrödinger–Poisson (SP) simulations, evidence for the onset of spontaneous interlayer coherence is observed for a relative filling fraction imbalance smaller than ~50%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Asymmetric magnon excitation by spontaneous toroidal ordering

The effects of spontaneous toroidal ordering on magnetic excitation are theoretically investigated for a localized spin model that includes a staggered Dzyaloshinsky–Moriya interaction and anisotropic exchange interactions, which arise from the antisymmetric spin–orbit coupling and the multiorbital correlation effect. We show that the model exhibits a Néel-type antiferromagnetic order, which simultaneously accompanies a ferroic toroidal order. We find that the occurrence of toroidal order modulates the magnon dispersion in an asymmetric way with respect to the wave number: a toroidal dipole order on the zigzag chain leads to a band-bottom shift, while a toroidal octupole order on the honeycomb lattice gives rise to a valley splitting. These asymmetric magnon excitations could be a source of unusual magnetic responses, such as nonreciprocal magnon transport. A variety of modulations are discussed while changing the lattice and magnetic symmetries. Furthermore, the implications regarding candidate materials for asymmetric magnon excitations are presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1990

Perturbation amplification in the entry region of a transitional pipe flow

The forced transition due to the application of large disturbances in the entry region of a pipe flow is considered. The disturbances are not large enough to cause a puff-type transition which is peculiar to a pipe low; they cause a slug-type transition which is akin to a flate turbulence spot. The perturbation amplifications with Reynolds number have been measured at the entrance and also soon after the mean turbulent flow has become fully developed. At the entrance, all dominant frequencies amplify in a nearly universal manner which is exponential in part of the Reynolds number range. Further-more, the nonlinear process undergoes a change at Reynolds numbers of 4930 to 6020, and again at 8120 to 10060. At the downstream station, an almost saturated amplification rate has been reached and, in the background of a higher turbulence level, the trend is qualitatively similar to that in peak-valley splitting.

Bandyopadhyay, Promode R.↗
NASA NTRS1990

Analysis of three-dimensional structures in boundary layers

A perturbation scheme, based on the simultaneous expansion of primary and secondary modes, is used to study the prebreakdown flow field. Results of the analysis are in good agreement with experiments for amplitudes in excess of 5 percent. For peak-valley splitting, the analysis captures the development of the high shear layer associated with breakdown. Subharmonic modes evolve differently, with the region of high shear concentrated near the wall.

Crouch, Jeffrey D.↗
DOE OSTI2017

Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

Carroll, Malcolm S.↗
DOE OSTI2016

Asymmetric valley-resolved beam splitting and incident modes in slanted graphene junctions

Electron injection into a graphene sheet through a slanted armchair graphene nanoribbon (AGNR) is investigated. An incident mode, or subband, in the AGNR is valley-unpolarized. Our attention is on the valley-resolved nature of the injected electron beams and its connection to the incident mode. It is known for a normal injection that an incident mode will split symmetrically into two valley-resolved beams of equal intensity. We show, in contrast, that slanted injections result in asymmetric valley-resolved beam splitting. The most asymmetric beam splitting cases, when one of the valley-resolved beams has basically disappeared, are found and the condition derived. This is shown not due to trigonal warping because it holds even in the low incident energy regime, as long as collimation allows. These most asymmetric beam splitting cases occur at energies within an energy interval near and include the subband edge of an incident mode. The physical picture is best illustrated by a projection of the slanted AGNR subband states onto that of the 2D graphene sheet. It follows that the disappearing of a valley-resolved beam coincides with the situation that the group velocities of the projected states in the corresponding valley are in backward directions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy

Circular-polarization-resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron–hole asymmetry is observed in the extracted electronic band structure. For monolayer graphene, a four-fold splitting of the $n$ = 0 to $n$ = 1 LL transition is evidenced and attributed to the lifting of the valley and spin degeneracy of the zeroth LL and the broken electron–hole symmetry. The magnetic field dependence of the splitting further reveals its possible mechanisms. The best fit to experimental data yields effective $g$-factors, $g^*_{vs}$ = 6.7 and $g^*_{ZS}$ = 4.8, for the valley and Zeeman splittings, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Valley dependent anisotropic spin splitting in silicon quantum dots

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. We report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Site-controlled telecom-wavelength single-photon emitters in atomically-thin MoTe2

Abstract Quantum emitters (QEs) in two-dimensional transition metal dichalcogenides (2D TMDCs) have advanced to the forefront of quantum communication and transduction research. To date, QEs capable of operating in O-C telecommunication bands have not been demonstrated in TMDCs. Here we report site-controlled creation of telecom QEs emitting over the 1080 to 1550 nm telecommunication wavelength range via coupling of 2D molybdenum ditelluride (MoTe 2 ) to strain inducing nano-pillar arrays. Hanbury Brown and Twiss experiments conducted at 10 K reveal clear photon antibunching with 90% single-photon purity. The photon antibunching can be observed up to liquid nitrogen temperature (77 K). Polarization analysis further reveals that while some QEs display cross-linearly polarized doublets with ~1 meV splitting resulting from the strain induced anisotropic exchange interaction, valley degeneracy is preserved in other QEs. Valley Zeeman splitting as well as restoring of valley symmetry in cross-polarized doublets are observed under 8 T magnetic field.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Silicon Qubits

There are two good reasons to attempt to build quantum bits (qubits) out of silicon. The first is the obvious foundation of classical microelectronics. Although silicon quantum computers would operate in a fundamentally different way from classical computers$-$for example, at cryogenic temperatures$-$still the level of development in material quality, crystal growth, and fabrication methodologies for silicon is unrivaled by any other material in the world. Leveraging even a small fraction of the worldwide investment in silicon for qubit development could potentially put silicon-based qubits far ahead of other solid-state alternatives. The second, less obvious reason for choosing silicon is the remarkably clean magnetic environment witnessed by spins in highly purified and isotopically enriched silicon material. Fortuitously, 95.3% of the naturally occurring isotopes of Si nuclei ( 28 Si and 30 Si) are spin-0. These nuclei therefore have a “closed shell” of nuclear moments, providing no external magnetic field whatsoever. Add to this the possibility of intrinsic silicon with part-per-billion chemical quality and the system is remarkably close to “vacuum” with respect to magnetic noise properties.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Magnetic control of valley pseudospin in monolayer WSe 2

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin 1-5 . In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment1,6 which underlies the valley-dependent circular dichroism 6 that allows optical generation of valley polarization 7-9 , intervalley quantum coherence 10 , and the valley Hall effect 11 . However, magnetic manipulation of valley pseudospin via this magnetic moment 12-13 , analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe 2 . Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Mechanically and optically controlled graphene valley filter

We theoretically investigate the valley-dependent electronic transport through a graphene monolayer modulated simultaneously by a uniform uniaxial strain and linearly polarized light. Within the Floquet formalism, we calculate the transmission probabilities and conductances of the two valleys. It is found that valley polarization can appear only if the two modulations coexist. Under a proper stretching of the sample, the ratio of the light intensity and the light frequency squared is important. If this quantity is small, the electron transport is mainly contributed by the valley-symmetric central band and the conductance is valley unpolarized; but when this quantity is large, the valley-asymmetric sidebands also take part in the transport and the valley polarization of the conductance appears. Furthermore, the degree of the polarization can be tuned by the strain strength, light intensity, and light frequency. It is proposed that the detection of the valley polarization can be realized utilizing the valley beam splitting. Thus, a graphene monolayer can be used as a mechanically and optically controlled valley filter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe 2 /CrI 3 Heterostructures

Monolayer valley semiconductors, such as tungsten diselenide (WSe 2 ), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudomagnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudomagnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to controlling valley physics via van der Waals heterostructure engineering. Here, we demonstrate the wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser-excitation power in heterostructures formed by monolayer WSe 2 and 2D magnetic chromium triiodide (CrI 3 ). The valley manipulation is realized via the optical control of the CrI 3 magnetization, which tunes the magnetic exchange field over a range of 20 T. Lastly, our results reveal a convenient new path toward the optical control of valley pseudospins and van der Waals magnetic heterostructures.

2D magnets↗
DOE OSTI2019

Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields

In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial—tens of teslas or more—due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS 2 , MoSe 2 , MoTe 2 , and WS 2 in very high magnetic fields to 91 T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton’s 1s ground state but also its excited 2s,3s,…,ns Rydberg states. This provides a direct experimental measure of the effective (reduced) exciton masses and dielectric properties. Exciton binding energies, exciton radii, and free-particle bandgaps are also determined. The measured exciton masses are heavier than theoretically predicted, especially for Mo-based monolayers. These results provide essential and quantitative parameters for the rational design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Valley photonic crystals for control of spin and topology

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing1,2,3,4. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points5,6,7,8,9,10. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials11,12,13,14,15. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley–spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Tunable excitons in bilayer graphene

Excitons, the bound states of an electron and a hole in a solid material, play a key role in the optical properties of insulators and semiconductors. Here, we report the observation of excitons in bilayer graphene (BLG) using photocurrent spectroscopy of high-quality BLG encapsulated in hexagonal boron nitride.We observed two prominent excitonic resonances with narrow line widths that are tunable from the mid-infrared to the terahertz range.These excitons obey optical selection rules distinct from those in conventional semiconductors and feature an electron pseudospin winding number of 2. An external magnetic field induces a large splitting of the valley excitons, corresponding to a g-factor of about 20. These findings open up opportunities to explore exciton physics with pseudospin texture in electrically tunable graphene systems.

Ju, Long↗
DOE OSTI2021

Controlling spin-orbit coupling strength of bulk transition metal dichalcogenide semiconductors

Transition metal dichalcogenide (TMD) semiconductors are attracting much attention in research regarding device physics based on their unique properties that can be utilized in spintronics and valleytronics. Although current studies concentrate on the monolayer form due to the explicitly broken inversion symmetry and the direct band gap, bulk materials also hold the capability of carrying spin and valley current. In this study, we report the methodology to continuously control the spin-orbit coupling (SOC) strength of bulk TMDs Mo 1-x W x Se 2 by changing the atomic ratio between Mo and W. The results show the size of band splitting at the K valley the measure of the coupling strength is linearly proportional to the atomic ratio of Mo and W. Here, our results thus demonstrate how to precisely tune the SOC coupling strength, and the collected information of which can serve as a reference for future applications of bulk TMDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗