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Voltage breakdown threshold of electronic equipment in partial pressure environment of nitrogen and water vapor
An investigation of the high voltage breakdown thresholds for molybdenum and carbon-based electrodes used in ion thruster accelerator grids has been undertaken.
Development of a radioimaging diagnostic for high-voltage component reliability testing and electrical breakdown computational model validation is described. Radioimaging has its roots in radio astronomy, where aperture synthesis (also known as synthesis imaging) has been utilized for decades to image radio sources far from Earth. Radioimaging as described herein, in contrast, seeks to image radio sources in close proximity to its receivers (i.e., in a laboratory environment). Here it is shown that corona discharge, a non-destructive precursor to catastrophic (thermal) arc discharge, electromagnetically radiates strongly within a 250 kHz – 2.5 GHz bandwidth, and is readily detected and located by postprocessing the received radio signals. The ability of radioimaging to detect both corona and arc discharge (grouped together herein as high voltage breakdown or HVB) makes it a valuable tool for 100% HVB detection in materials, components, and devices, and has the ability to indicate electrical weakness (via corona detection) prior to a destructive arc discharge event. Radioimaging enables HVB to be located both internal and external to dielectric components under test in near-real-time, with multiple and/or extended HVB events located simultaneously. In contrast, existing non-destructive diagnostics (at the time of this writing) either indicate electrical breakdown without resolving failure locations (e.g., current, voltage, and chemical measurements), locate external HVB (e.g., high-speed optical and ultraviolet (UV) measurements or photography), or locate both external and internal HVB but with low fidelity (e.g., a single HVB source can be located by existing time-of-arrival (TOA) UHF or acoustic emissions). Radioimaging instead creates a sequence of high-fidelity images similar to an optical high-speed camera but at radiofrequencies (RF), and is not limited to two-dimensions. Moreover, radioimaging has already served one internal and two external industry customers, the results of which are detailed in this report. The radioimaging results described herein were part of a three-year effort funded by the Sandia Lab Directed Research and Development (LDRD) program within the Radiation, Electromagnetic, High Energy Density Science (REHEDS) investment area.
Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.
Polyurethane foam encapsulation techniques for maintaining constant atmosphere and providing mechanical protection against high voltage breakdown in spacecraft ion propulsion systems
The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.
Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.
Despite many recent advances, overpotentials remain high for anion exchange membrane water electrolyzers (AEMWEs). Voltage breakdown analyses (VBA) can help decouple the origins of overpotentials and facilitate design decisions to improve cell performance, but studies investigating how to adapt and apply VBA to AEMWEs are lacking. Specifically, catalyst layer resistances and their contributions to overpotentials are not consistently quantified in water electrolysis and are rarely quantified for AEMWEs. This work presents a systematic methodology for VBA tailored to AEMWEs, including an approach to Tafel analysis in the absence of a reference electrode and under conditions where both the oxygen evolution reaction and hydrogen evolution reaction exhibit significant overpotentials. Catalyst layer resistance contributions are diagnosed via changes in the catalyst layer thickness, transport layer porosity, ionomer content, and electrolyte concentration. In this study, we explain discrepancies between inherent catalytic kinetics and device level performance and identify catalyst layer design strategies to reduce catalyst layer resistances.
A vertical heterojunction barrier Schottky diode was fabricated by combining a p-type SnO film array with a β-Ga 2 O 3 substrate, yielding a lower reverse leakage current and an improved breakdown voltage than its Schottky barrier diode counterpart.
This viewgraph presentation reviews exploration activities at JPL into various potting materials. Since high power space-borne microwave transmitters invariably use a vacuum tube as a final power amplifier, and this tube requires high electrode voltages for operation. The associated high voltage insulation typically represents a significant fraction of the mass of the transmitter. Since mass is always a premium resource on board spacecraft, we have been investigating materials with the potential to reduce the mass required for our applications here at JPL. This paper describes electrical breakdown results obtained with various potting materials. Conathane EN-11 (polyurethane) is the traditional HVPS encapsulant at JPL, but due to temperature limitations and durability issues it was deemed inappropriate for the particular application (i.e., CloudSat radar). The choices for the best available materials were epoxies, or silicones. Epoxies are too rigid, and were deemed inadvisable. Two silicones were further investigated (i.e.,ASTM E595- 93e2: GE RTV566(R) and Dow Corning 93-500X(R), another compound was considered (i.e., DC material, Sylgard 184(R)). "Loading" (adding filler materials) the potting compound will frequently alter the final material properties. Powdered alumina and borosilicate glass known as "microballoons" were investigated as possible loading materials. The testing of the materials is described. Each of the two loading materials offers advantages and disadvantages. The advantages and disadvantages are described.
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Solutions to Poisson equation and applicability to problems of electrical breakdown due to low pressure gaseous environment
Cathode surface whiskers initiating electrical breakdown in ultrahigh vacuum
Failure analysis of scanning spectrometer of reflecting telescope aboard OSO-4
We will start by reviewing some of the basic equations which regulate outgassing and show their dependency on temperature and thickness. Then we will draw an analogy between mass transfer or outgassing and radiant heat transfer, and show how we utilize a computer program initially written for radiant heat transfer to determine the condensation rate caused by mass transfer.
The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.
Research study was conducted and results were published. Using principles of similarity and minimum of experimental data, a number of universal curves have been constructed covering wide range of experimental parameters. Gases other than air, such as argon and carbon dioxide, also are included in study.
Magnetohydrodynamic power generation experiments utilizing a cesium-seeded H2-O2 working fluid were carried out using a diverging area Hall duct having an entrance Mach number of 2. The experiments were conducted in a high-field strength cryomagnet facility at field strengths up to 5 tesla. The effects of power takeoff location, axial duct location within the magnetic field, generator loading, B-field strength, and electrode breakdown voltage were investigated. For the operating conditions of these experiments, it is found that the power output increases with the square of the B-field and can be limited by choking of the channel or interelectrode voltage breakdown which occurs at Hall fields greater than 50 volts/insulator. Peak power densities of greater than 100 MW/cu M were achieved.