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NASA NTRS2017

Relationship Between Unusual High-Temperature Fatigue Crack Growth Threshold Behavior in Superalloys and Sudden Failure Mode Transitions

An investigation of high temperature cyclic fatigue crack growth (FCG) threshold behavior of two advanced nickel disk alloys was conducted. The focus of the study was the unusual crossover effect in the near-threshold region of these type of alloys where conditions which produce higher crack growth rates in the Paris regime, produce higher resistance to crack growth in the near threshold regime. It was shown that this crossover effect is associated with a sudden change in the fatigue failure mode from a predominant transgranular mode in the Paris regime to fully intergranular mode in the threshold fatigue crack growth region. This type of a sudden change in the fracture mechanisms has not been previously reported and is surprising considering that intergranular failure is typically associated with faster crack growth rates and not the slow FCG rates of the near-threshold regime. By characterizing this behavior as a function of test temperature, environment and cyclic frequency, it was determined that both the crossover effect and the onset of intergranular failure are caused by environmentally driven mechanisms which have not as yet been fully identified. A plausible explanation for the observed behavior is proposed.

Fatigue Crack Growth Thresholds; Grain boundary ox↗

NASA NTRS2017

Relationship Between Unusual High-Temperature Fatigue Crack Growth Threshold Behavior in Superalloys and Sudden Failure Mode Transitions

Fatigue Crack Growth Thresholds; Grain boundary ox↗

NASA NTRS1985

Threshold kinetic processes for t-C4F9I

To determine the relative threshold of the lasant gas t-C4F9I in comparison to n-C3F7I, the pump energy to reach threshold for photodissociation iodine lasing is measured in a common aparatus. The comparison is made for the threshold energies in the iodide pressure range up to 50 Torr when 64-J electric input into a flashlamp is used for pumping. It is shown from the results that qualitative differences between the thresholds of the two gases result from the degree to which steady state is achieved by the time threshold is reached. The estimated recombination rate for t-C4F9I is found to be much larger than the value given by Ershov et al (1978).

Lee, J. H.↗

NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗

NASA NTRS1990

An analysis of the threshold method for measuring area-average rainfall

Experimental evidence shows that the area-average rain rate and the fractional area covered by rain rate exceeding a fixed threshold are highly correlated; that is, are highly linearly related. A precise theoretical explanation of this fact is given. The explanation is based on the observation that rain rate has a mixed distribution, one that is a mixture of a discrete distribution and a continuous distribution. Under a homogeneity assumption, the slope of the linear relationship depends only on the continuous part of the distribution and as such is found to be markedly immune to parameter changes. This is illustrated by certain slope surfaces obtained from three specific distributions. The threshold level can be chosen in an optimal way by minimizing a certain distance function defined over the threshold range. In general, the threshold level should be not too far from the mean rain rate conditional on rain. The so-called threshold method advocates measuring rainfall from fractional area exploiting the observed linear relationship of the later with the area average rain rate. The method is potentially useful for the estimation of rainfall from space via satellites.

Kedem, Benjamin↗

NASA NTRS1992

An experiment on the threshold effect in the coherent wave instability

Results are reported from an experimental study of the threshold effect in the coherent wave instability in which a combination of simulated VLF noise 200 Hz wide, superimposed on a variable amplitude constant frequency test signal (about 3 kHz) is transmitted from Siple Station, Antarctica, and received at Lake Mistissini, Quebec. As the test signal is slowly ramped up in power a 'threshold' level at which growth and triggering of emissions begin (coherent wave instability) is reached. It is shown that sufficiently strong simulated noise supresses the coherent wave instability, which corresponds to increasing the threshold level. This experiment is repeated at progressively lower levels of the simulated noise, until the threshold level for growth and triggering on the test signal no longer changes. At this point the simulated noise power is estimated to equal typical background noise levels due to magnetospheric hiss in the interaction region. It is suggested that unducted magnetospheric hiss is responsible for the threshold effect.

Mielke, T. A.↗

NASA NTRS1996

Investigation of Adaptive-threshold Approaches for Determining Area-Time Integrals from Satellite Infrared Data to Estimate Convective Rain Volumes

The principal goal of this project is to establish relationships that would allow application of area-time integral (ATI) calculations based upon satellite data to estimate rainfall volumes. The research is being carried out as a collaborative effort between the two participating organizations, with the satellite data analysis to determine values for the ATIs being done primarily by the STC-METSAT scientists and the associated radar data analysis to determine the 'ground-truth' rainfall estimates being done primarily at the South Dakota School of Mines and Technology (SDSM&T). Synthesis of the two separate kinds of data and investigation of the resulting rainfall-versus-ATI relationships is then carried out jointly. The research has been pursued using two different approaches, which for convenience can be designated as the 'fixed-threshold approach' and the 'adaptive-threshold approach'. In the former, an attempt is made to determine a single temperature threshold in the satellite infrared data that would yield ATI values for identifiable cloud clusters which are closely related to the corresponding rainfall amounts as determined by radar. Work on the second, or 'adaptive-threshold', approach for determining the satellite ATI values has explored two avenues: (1) attempt involved choosing IR thresholds to match the satellite ATI values with ones separately calculated from the radar data on a case basis; and (2) an attempt involved a striaghtforward screening analysis to determine the (fixed) offset that would lead to the strongest correlation and lowest standard error of estimate in the relationship between the satellite ATI values and the corresponding rainfall volumes.

Smith, Paul L.↗

NASA NTRS1994

The Relationship Between Area-Time Integrals Determined from Satellite Infrared Data by Means of a Fixed-Threshold Approach and Convective Rainfall Volumes

The relationship of the rainfall from convective clouds to area-time integrals determined from satellite infrared data using a fixed infrared-temperature threshold is investigated. Concurrent radar and rapid-scan satellite data obtained during field projects in the northern High Plains and the southeastern United States were used in this study. The fixed IR threshold appropriate for each region was determined by an optimization procedure that identified the brightness threshold that yields the strongest relationship between estimated rainfall from a cloud cluster and its satellite Area-Time Integral (ATI) for each dataset. For the North Dakota-Montana area the optimization procedure indicated that the area enclosed by the -22.5 C isotherm provides satellite ATI values most closely related to the estimated rainfalls. For the southeastern United States project, the optimized tem- perature threshold was 8.5'C. The difference between the thresholds determined for the two geographic areas suggests that a different 'calibration' for each distinct area may be needed to make use of this relationship. Slopes of the two log-log rainfall-ATI regressions are less than unity, indicating that a relative horizontal expansion and/or increase in persistence of a cloud cluster exceeds the associated increase in precipitation. Implications for the Geostationary Operational Environmental Satellite precipitation index are discussed. New results concerning the rain volume-radar ATI relationship for the southeastern United States are also appended to the paper.

Johnson, L. Ronald↗

NASA NTRS2000

Polysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET's with Ultrathin Gate Oxide

In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET's with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) "atomistic" simulation technique described else-where. MOSFET's with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveal that even in devices with a single crystal gate the gate depletion and the random dopants in it are responsible for a substantial fraction of the threshold voltage fluctuations when the gate oxide is scaled-in the range of 1-2 nm. Simulation experiments have been used in order to separate the enhancement in the threshold voltage fluctuations due to an effective increase in the oxide thickness associated with the gate depletion from the direct influence of the random dopants in the gate depletion layer. The results of the experiments show that the both factors contribute to the enhancement of the threshold voltage fluctuations, but the effective increase in the oxide-thickness has a dominant effect in the investigated range of devices. Simulations illustrating the effect or the polysilicon grain boundaries on the threshold voltage variation are also presented.

Asenov, Asen↗

NASA NTRS1993

Near-Threshold Rovibrational Excitation of HF by Electron Impact

The pronounced threshold peaks found in cross sections for electron-impact excitation of the vibrational levels of HF have been studied using an R-matrix method, in which electron exchange, correlation effects and polarization are included. Vibration is modelled inside the R-matrix sphere using the energy-modified adiabatic phase matrix method (EMAP). Rotation of the target molecule is treated outside the R-matrix sphere, using the frame transformation method. The external rovibronic close-coupling equations are solved by analytic methods. Analysis of the multichannel threshold structures indicates that the peaks found for rovibrational excitation of nu = 1 can be interpreted as virtual states while those for nu = 2 correspond to nuclear-excited Feshbach resonances. These two different results correspond simply to a change of sign of a small parameter that is determined by the threshold analysis. Whereas the overall shapes of the excitation peaks agree with earlier theoretical results, we have found detailed rotational fine structures for scattering energies on the order of the rotational constant above and below the opening of the vibrational channels. The partial and total cross sections for rovibrational state-to-state transitions in the energy region of the peaks are analysed. Characteristic cusp structures and excitation peaks are found at the rovibrational thresholds for transitions with small angular momentum transfer (Delta)j =0, 1 and 2. Differential cross sections are similar to recent measurements. These experimental data do not show the relatively sharp rise at the vibrational thresholds indicated by theory. Theory and experiment are in good agreement for the shape and magnitude of the angular dependence of cross sections for rovibrational state-to-state transitions, especially at larger energies.

Thummel, Helmar T.↗

NASA NTRS2007

Three Dimensional Constraint Effects on the Estimated (Delta)CTOD during the Numerical Simulation of Different Fatigue Threshold Testing Techniques

Variation in constraint through the thickness of a specimen effects the cyclic crack-tip-opening displacement (DELTA CTOD). DELTA CTOD is a valuable measure of crack growth behavior, indicating closure development, constraint variations and load history effects. Fatigue loading with a continual load reduction was used to simulate the load history associated with fatigue crack growth threshold measurements. The constraint effect on the estimated DELTA CTOD is studied by carrying out three-dimensional elastic-plastic finite element simulations. The analysis involves numerical simulation of different standard fatigue threshold test schemes to determine how each test scheme affects DELTA CTOD. The American Society for Testing and Materials (ASTM) prescribes standard load reduction procedures for threshold testing using either the constant stress ratio (R) or constant maximum stress intensity (K(sub max)) methods. Different specimen types defined in the standard, namely the compact tension, C(T), and middle cracked tension, M(T), specimens were used in this simulation. The threshold simulations were conducted with different initial K(sub max) values to study its effect on estimated DELTA CTOD. During each simulation, the DELTA CTOD was estimated at every load increment during the load reduction procedure. Previous numerical simulation results indicate that the constant R load reduction method generates a plastic wake resulting in remote crack closure during unloading. Upon reloading, this remote contact location was observed to remain in contact well after the crack tip was fully open. The final region to open is located at the point at which the load reduction was initiated and at the free surface of the specimen. However, simulations carried out using the constant Kmax load reduction procedure did not indicate remote crack closure. Previous analysis results using various starting K(sub max) values and different load reduction rates have indicated DELTA CTOD is independent of specimen size. A study of the effect of specimen thickness and geometry on the measured DELTA CTOD for various load reduction procedures and its implication in the estimation of fatigue crack growth threshold values is discussed.

Seshadri, Banavara R.↗

NASA NTRS2012

Optimal Dynamic Sub-Threshold Technique for Extreme Low Power Consumption for VLSI

For miniaturization of electronics systems, power consumption plays a key role in the realm of constraints. Considering the very large scale integration (VLSI) design aspect, as transistor feature size is decreased to 50 nm and below, there is sizable increase in the number of transistors as more functional building blocks are embedded in the same chip. However, the consequent increase in power consumption (dynamic and leakage) will serve as a key constraint to inhibit the advantages of transistor feature size reduction. Power consumption can be reduced by minimizing the voltage supply (for dynamic power consumption) and/or increasing threshold voltage (V(sub th), for reducing leakage power). When the feature size of the transistor is reduced, supply voltage (V(sub dd)) and threshold voltage (V(sub th)) are also reduced accordingly; then, the leakage current becomes a bigger factor of the total power consumption. To maintain low power consumption, operation of electronics at sub-threshold levels can be a potentially strong contender; however, there are two obstacles to be faced: more leakage current per transistor will cause more leakage power consumption, and slow response time when the transistor is operated in weak inversion region. To enable low power consumption and yet obtain high performance, the CMOS (complementary metal oxide semiconductor) transistor as a basic element is viewed and controlled as a four-terminal device: source, drain, gate, and body, as differentiated from the traditional approach with three terminals: i.e., source and body, drain, and gate. This technique features multiple voltage sources to supply the dynamic control, and uses dynamic control to enable low-threshold voltage when the channel (N or P) is active, for speed response enhancement and high threshold voltage, and when the transistor channel (N or P) is inactive, to reduce the leakage current for low-leakage power consumption.

Duong, Tuan A.↗

NASA NTRS2014

Uncertainties in the Modelled CO2 Threshold for Antarctic Glaciation

frequently cited atmospheric CO2 threshold for the onset of Antarctic glaciation of approximately780 parts per million by volume is based on the study of DeConto and Pollard (2003) using an ice sheet model and the GENESIS climate model. Proxy records suggest that atmospheric CO2 concentrations passed through this threshold across the Eocene-Oligocene transition approximately 34 million years. However, atmospheric CO2 concentrations may have been close to this threshold earlier than this transition, which is used by some to suggest the possibility of Antarctic ice sheets during the Eocene. Here we investigate the climate model dependency of the threshold for Antarctic glaciation by performing offline ice sheet model simulations using the climate from 7 different climate models with Eocene boundary conditions (HadCM3L, CCSM3, CESM1.0, GENESIS, FAMOUS, ECHAM5 and GISS_ER). These climate simulations are sourced from a number of independent studies, and as such the boundary conditions, which are poorly constrained during the Eocene, are not identical between simulations. The results of this study suggest that the atmospheric CO2 threshold for Antarctic glaciation is highly dependent on the climate model used and the climate model configuration. A large discrepancy between the climate model and ice sheet model grids for some simulations leads to a strong sensitivity to the lapse rate parameter.

simulation↗

NASA NTRS2016

A New Load Residual Threshold Definition for the Evaluation of Wind Tunnel Strain-Gage Balance Data

A new definition of a threshold for the detection of load residual outliers of wind tunnel strain-gage balance data was developed. The new threshold is defined as the product between the inverse of the absolute value of the primary gage sensitivity and an empirical limit of the electrical outputs of a strain{gage. The empirical limit of the outputs is either 2.5 microV/V for balance calibration or check load residuals. A reduced limit of 0.5 microV/V is recommended for the evaluation of differences between repeat load points because, by design, the calculation of these differences removes errors in the residuals that are associated with the regression analysis of the data itself. The definition of the new threshold and different methods for the determination of the primary gage sensitivity are discussed. In addition, calibration data of a six-component force balance and a five-component semi-span balance are used to illustrate the application of the proposed new threshold definition to different types of strain{gage balances. During the discussion of the force balance example it is also explained how the estimated maximum expected output of a balance gage can be used to better understand results of the application of the new threshold definition.

load residuals↗

NASA NTRS2015

Experimental and Finite Element Modeling of Near-Threshold Fatigue Crack Growth for the K-Decreasing Test Method

The experimental methods to determine near-threshold fatigue crack growth rate data are prescribed in ASTM standard E647. To produce near-threshold data at a constant stress ratio (R), the applied stress-intensity factor (K) is decreased as the crack grows based on a specified K-gradient. Consequently, as the fatigue crack growth rate threshold is approached and the crack tip opening displacement decreases, remote crack wake contact may occur due to the plastically deformed crack wake surfaces and shield the growing crack tip resulting in a reduced crack tip driving force and non-representative crack growth rate data. If such data are used to life a component, the evaluation could yield highly non-conservative predictions. Although this anomalous behavior has been shown to be affected by K-gradient, starting K level, residual stresses, environmental assisted cracking, specimen geometry, and material type, the specifications within the standard to avoid this effect are limited to a maximum fatigue crack growth rate and a suggestion for the K-gradient value. This paper provides parallel experimental and computational simulations for the K-decreasing method for two materials (an aluminum alloy, AA 2024-T3 and a titanium alloy, Ti 6-2-2-2-2) to aid in establishing clear understanding of appropriate testing requirements. These simulations investigate the effect of K-gradient, the maximum value of stress-intensity factor applied, and material type. A material independent term is developed to guide in the selection of appropriate test conditions for most engineering alloys. With the use of such a term, near-threshold fatigue crack growth rate tests can be performed at accelerated rates, near-threshold data can be acquired in days instead of weeks without having to establish testing criteria through trial and error, and these data can be acquired for most engineering materials, even those that are produced in relatively small product forms.

Smith, Stephen W.↗

NASA NTRS2015

Characterizing the Effects of a Vertical Time Threshold for a Class of Well-Clear Definitions

A fundamental requirement for the integration of unmanned aircraft into civil airspace is the capability of aircraft to remain well clear of each other and avoid collisions. This requirement has led to a broad recognition of the need for an unambiguous, formal definition of well clear. It is further recognized that any such definition must be interoperable with existing airborne collision avoidance systems (ACAS). A particular class of well-clear definitions uses logic checks of independent distance thresholds as well as independent time thresholds in the vertical and horizontal dimensions to determine if a well-clear violation is predicted to occur within a given time interval. Existing ACAS systems also use independent distance thresholds, however a common time threshold is used for the vertical and horizontal logic checks. The main contribution of this paper is the characterization of the effects of the decoupled vertical time threshold on a well-clear definition in terms of (1) time to well-clear violation, and (2) interoperability with existing ACAS. The paper provides governing equations for both metrics and includes simulation results to illustrate the relationships. In this paper, interoperability implies that the time of well-clear violation is strictly less than the time a resolution advisory is issued by ACAS. The encounter geometries under consideration in this paper are initially well clear and consist of constant-velocity trajectories resulting in near-mid-air collisions.

Upchurch, Jason M.↗

NASA NTRS2018

An Abrupt Transition to an Intergranular Failure Mode in the Near-Threshold FCG Regime in Ni-Based Superalloys

Cyclic near-threshold FCG behavior of two disk superalloys was evaluated, and was shown to exhibit an unexpected sudden failure mode transition from a mostly transgranular failure mode at higher stress intensities to an almost completely intergranular failure mode in the threshold regime. The change in failure modes was associated with a crossover effect in which the conditions that produced higher FCG rates in the Paris regime resulted in lower FCG rates and increased ΔKth values in the threshold region. High resolution scanning and transmission electron microscopy was used to carefully characterize the crack tips at these near-threshold conditions. Formation of stable Al-oxide followed by Cr and Ti oxides was found to occur at the crack tip prior to formation of unstable oxides. To contrast with the threshold failure mode regime, a quantitative assessment of the role that the intergranular failure mode has on cyclic FCG behavior in the Paris regime was also performed. It was demonstrated that the even a very limited intergranular failure content dominates the FCG response under mixed mode failure conditions.

fatigue crack growth↗

NASA NTRS2018

An Abrupt Transition to an Intergranular Failure Mode in the Near-Threshold Fatigue Crack Growth Regime in Ni-Based Superalloys

Cyclic near-threshold fatigue crack growth (FCG) behavior of two disk superalloys was evaluated and was shown to exhibit an unexpected sudden failure mode transition from a mostly transgranular failure mode at higher stress intensity factor ranges to an almost completely intergranular failure mode in the threshold regime. The change in failure modes was associated with a crossover of FCG resistance curves in which the conditions that produced higher FCG rates in the Paris regime resulted in lower FCG rates and increased Kth values in the threshold region. High-resolution scanning and transmission electron microscopy were used to carefully characterize the crack tips at these near-threshold conditions. Formation of stable Al-oxide followed by Cr-oxide and Ti-oxides was found to occur at the crack tip prior to formation of unstable oxides. To contrast with the threshold failure mode regime, a quantitative assessment of the role that the intergranular failure mode has on cyclic FCG behavior in the Paris regime was also performed. It was demonstrated that even a very limited intergranular failure content dominates the FCG response under mixed mode failure conditions.

Telesman, J.↗