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At least 55 records · Page 3

Experimental transition probabilities and Stark-broadening parameters of neutral and single ionized tin

Strengths and Stark-effect widths of the Sn I and Sn II lines prominent between 3200 and 7900 A are measured with a spectroscopic shock tube. Absolute strengths of 17 ionic lines are obtained with estimated (22-50)% accuracy and conform to appropriate quantum-mechanical sum rules. Relative transition probabilities for nine prominent neutral tin lines, normalized to radiative-lifetime data, are compared with other experiments and theoretical predictions. Parameters for Stark-effect broadening are measured over a range of plasma electron densities. Broadening data (with accuracies of 15-35%) for one neutral and ten ionic lines of tin are compared to theoretical predictions.

Miller, M. H.↗

Implementing Faraday effect measurement constraints into the Grad–Shafranov equilibrium fitting code EFIT

A new tool for the exploration and diagnosis of the internal magnetic field of plasmas in the DIII-D tokamak in the form of a constraint on the EFIT (Equilibrium Fitting) Grad–Shafranov code based on the Faraday-effect Radial Interferometer-Polarimeter (RIP) diagnostic is presented, including description, verification, and sample application. The physics underlying the diagnostic and its implementation into EFIT are discussed, and the results showing the verification of the model are given, and the model’s limitations are discussed. The influence of the diagnostic’s input on the resulting equilibrium parameters is characterized. Furthermore, the effect of electron density profile refinement is evaluated and found to be negligible. A sample application of the diagnostic is shown, indicating that the RIP constraint has similar effects on the equilibrium as motional Stark effect constraints do.

47 OTHER INSTRUMENTATION↗

Resonant Transmissive Modulator Construction for Use in Beam Steering Array

An agile electronically configurable optical beam steering device for use in directional free-space transmission of optical signals is described. The device design employs an array of tunable resonant transmissive modulators constructed from multi-layered stacks of electro-optically active dielectric materials. Each modulator may be individually configured to transmit an optical signal with a specific amount of phase and group velocity modulation. The resulting diffractive interactions between modulator outputs provide a method for directional optical signal transmission. Of particular focus within this presentation is the optimized design of the individual modulator. It is widely known that periodic multi-layered stacks of dielectric materials exhibit reflective and transmissive resonances as described by the stack's transmission function. If an electric field is applied normal to the stack's layers, phenomena such as the electro-optic effect and/or the quantum-confined Stark effect may be employed to change the effective refractive index within the stack. This refractive index change alters the stack's transmission function and modulates the phase and group velocity of the transmitted optical signal. By varying the parameters that describe the stack's specific construction and operation, such as number of layers within the stack, refractive indexes of stack materials, layer thicknesses, and combinations of periodic verses non-periodic layer repetitions, custom transmittance functions may be generated. The transmitted optical signal carrier frequency and bandwidth must be carefully selected to maximize transmission and to minimize absorption. A computational optimization of the variables describing the stack's construction strives to maximize the amount of optical signal modulation verses applied voltage. Trade-offs between methods of increasing device performance verses the limitations of fabrication technologies are considered.

Keys, Andrew S.↗

Voltage-controlled reversible modulation of colloidal quantum dot thin film photoluminescence

Active modulation of quantum dot thin film photoluminescence (PL) has been far-reaching potential applications in biomedical and optoelectronic systems, but challenges remain in achieving large PL modulation depth and fast temporal response. Here, we report an efficient voltage-controlled optical down-converter by optically exciting a colloidal quantum dot thin film within a quantum dot light-emitting diode under reverse bias. Utilizing field-induced luminescence quenching, we show that a large electric field can strongly modify carrier dynamics in this nanostructured device, resulting in stable and reversible photoluminescence quenching. The device exhibits photoluminescence reduction of up to 99.5%, corresponding to a contrast ratio of 200:1 under the applied electric field of 3 MV cm -1 with a 300 ns response time. Using excitation wavelength dependent and transient PL spectroscopy, we further show that the high degree of quenching is achieved by a synergistic interplay of quantum-confined Stark effect and field-induced exciton dissociation.

42 ENGINEERING↗

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗

Photoinduced Rotation of Colloidal Semiconductor Nanocrystals in an Electric Field

In this work, we demonstrate that solution-phase semiconductor nanocrystals (NCs) undergo photoinduced rotation in an external electric field. Present measurements backed by theoretical calculations show that the rotation of colloidal NCs is driven by the excited-state dipole moment, which is counterbalanced by the solvent viscosity drag. Corresponding angular velocities range from 0.5°/ns for cubic CsPbBr 3 NCs to 3°/ns for nanoparticles with a large photoinduced charge separation (CdSe/CdS core–shell and dot-in-a-rod NCs). Because of photoinduced rotation, solution-phase semiconductor NCs exhibited an order-of-magnitude increase in the spectral changes caused by the quantum confined Stark effect (QCSE), compared to solid NC assemblies. The enhanced QCSE of colloidal NCs reflected their global alignment in solution, which could be retained in a solid environment by slow crystallization. Overall, we expect that the demonstrated phenomenon of the colloidal nanocrystal rotation in an electric field will open up new avenues for developing electro-optical and voltage-sensitive applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Conceptual study on using Doppler backscattering to measure magnetic pitch angle in tokamak plasmas

We introduce a new approach to measure the magnetic pitch angle profile in tokamak plasmas with Doppler backscattering (DBS), a technique traditionally used for measuring flows and density fluctuations. The DBS signal is maximised when its probe beam's wavevector is perpendicular to the magnetic field at the cutoff location, independent of the density fluctuations [Hillesheim \emph{et al} 2022 \emph{Nucl. Fusion} \textbf{55} 073024]. Hence, if one could isolate this effect, DBS would then yield information about the magnetic pitch angle. By varying the toroidal launch angle, the DBS beam reaches cutoff with different angles with respect to the magnetic field, but with other properties remaining similar. Hence, the toroidal launch angle which gives maximum backscattered power is thus that which is matched to the pitch angle at the cutoff location, enabling inference of the magnetic pitch angle. We performed systematic scans of the DBS toroidal launch angle for repeated DIII-D tokamak discharges. Experimental DBS data from this scan were analysed and combined with Gaussian beam-tracing simulations using the Scotty code [Hall-Chen \emph{et al} 2022 \emph{Plasma Phys. Control. Fusion} \textbf{64} 095002]. The pitch-angle inferred from DBS is consistent with that from magnetics-only and motional-Stark-effect-constrained (MSE) equilibrium reconstruction in the edge. In the core, the pitch angles from DBS and magnetics-only reconstructions differ by one to two degrees, while simultaneous MSE measurements were not available. The uncertainty in these measurements was under a degree; we show that this uncertainty is primarily due to the error in toroidal steering, the number of toroidally separated measurements, and shot-to-shot repeatability. We find that the error of pitch-angle measurements can be reduced by optimising the poloidal launch angle and initial beam properties. Since DBS has high spatial and temporal resolutions, is non-perturbative, does not require neutral beams, and is likely robust to neutron damage of and debris on the first mirrors, using DBS to measure the pitch angle in future fusion energy systems is especially appealing.

beam tracing↗

Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures

Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 ± 0.1) Å with d being very close to d Se = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. Furthermore, these heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Membrane potential sensing: Material design and method development for single particle optical electrophysiology

We review the development of “single” nanoparticle-based inorganic and organic voltage sensors, which can eventually become a viable tool for “non-genetic optogenetics.” The voltage sensing is accomplished with optical imaging at the fast temporal response and high spatial resolutions in a large field of view. Inorganic voltage nanosensors utilize the Quantum Confined Stark Effect (QCSE) to sense local electric fields. Engineered nanoparticles achieve substantial single-particle voltage sensitivity (~2% Δλ spectral Stark shift up to ~30% ΔF/F per 160 mV) at room temperature due to enhanced charge separation. A dedicated home-built fluorescence microscope records spectrally resolved images to measure the QCSE induced spectral shift at the single-particle level. Biomaterial based surface ligands are designed and developed based on theoretical simulations. The hybrid nanobiomaterials satisfy anisotropic facet-selective coating, enabling effective compartmentalization beyond non-specific staining. Self-spiking- and patched-HEK293 cells and cortical neurons, when stained with hybrid nanobiomaterials, show clear photoluminescence intensity changes in response to membrane potential (MP) changes. Organic voltage nanosensors based on polystyrene beads and nanodisk technology utilize Fluorescence (Förster) Resonance Energy Transfer (FRET) to sense local electric fields. Voltage sensing FRET pairs achieve voltage sensitivity up to ~35% ΔF/F per 120 mV in cultures. Non-invasive MP recording from individual targeted sites (synapses and spines) with nanodisks has been realized. However, both of these QCSE- and FRET-based voltage nanosensors yet need to reach the milestone of recording individual action potentials from individual targeted sites.

59 BASIC BIOLOGICAL SCIENCES↗

Effects of the Stark Shift on the Evolution of the Field Entropy and Entanglement in the Two-Photon Jaynes-Cummings Model

The evolution of the field entropy in the two-photon JCM in the presence of the Stark shift is investigated, and the effects of the dynamic Stark shift on the evolution of the field entropy and entanglement between the atom and field, are examined. The results show that the dynamic Stark shift plays an important role in the evolution of the field entropy in two-photon processes.

Fang, Mao Fa↗

Electric Field Analysis in a Cold-Ion Source Using Stark Spectroscopy of Rydberg Atoms

Here, we analyze electric fields in ion sources generated by quasicontinuous photoionization of cold Rb atoms trapped in the focal spot of a near-concentric, in-vacuum cavity for 1064-nm laser light. Ion streams are extracted with an external electric field, F. Stark effects of Rb 57F and of nearby high-angular-momentum Rydberg levels, which exhibit large, linear Stark shifts, are employed to study the net electric-field probability distribution within the ion-source region over an extraction-field range of 0 < F < 0.35 V/cm. For F = 0, we also investigate ion-field-induced Stark spectra of the 60P 1/2 state, which exhibits a (lesser) quadratic electric-field response that affords a simplified electric-field analysis. Experimental Rydberg spectra are compared with theoretical Stark spectra, which are weighted with net electric-field distributions obtained from classical ion-trajectory simulations that include Coulomb interactions. Experiments and models are in good agreement. At small F and high ion-source rates, the field approximately follows a Holtsmark distribution, and the ion streams are degraded by the Coulomb microfields. With increasing F and at lower ion-source rates, the fields become narrowly distributed around F, resulting in directional ion streams that are less degraded by microfields. Our results are of interest for monitoring cold-ion sources for focused-ion-beam applications, where Coulomb interactions are of concern, and for studies of electric fields in cold plasmas.

74 ATOMIC AND MOLECULAR PHYSICS↗

Electrical Tuning of Tin-Vacancy Centers in Diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (Sn-V - ) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1 K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising tuning techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study the electrical tuning of Sn-V - centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7 GHz. We observe both quadratic and linear dependence on the applied electric field. Further, we also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗