Solar and laser energy conversion with Schottky barrier solar cells
Photovoltaic devices have been fabricated for solar and short-wavelength laser energy conversion using the thin metal film-semiconductor (Schottky barrier) approach. Studies of the metal film optical characteristics and the voltage outputs were emphasized. Air mass zero efficiencies of 8 to 9% in GaAs and laser conversion efficiencies of 25% at 4880 A in GaAs(0.6)P(0.4) are presently measured, with projected efficiencies of 15 and 45%, respectively. The techniques, if applied successfully to semiconductor thin films, could have an impact in solar energy terrestrial application.