Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Sn”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Mechanistic origin of solvent-dependent thermal stability in sodiated Sn anodes for sodium-ion batteries

Understanding the thermal stability of high-energy density alloy anodes is critical for the safe deployment of sodium-ion batteries (SIBs). Here, accelerating rate calorimetry (ARC), post-mortem characterizations, and density functional theory (DFT) calculations are combined to understand the thermal reactivity of fully sodiated Sn, Sn-hard carbon (HC) blends, and HC anodes in carbonate- and ether-based electrolytes. ARC measurements show that propylene carbonate (PC) causes earlier self-heating rate (SHR) onset and higher reactivity than tetraethylene glycol dimethyl ether (TEGDME), indicating inferior thermal stability. Sodiated Sn exhibits better thermal stability than sodiated HC, while Sn-HC blends show intermediate behavior that improves with increasing Sn content. Post-ARC analyses reveal desodiation of Na15Sn4 to metallic Sn with particle coalescence, whereas Sn-HC blends and HC retain finer morphologies. PC promotes Sn oxidation to SnO, while TEGDME suppresses oxide formation; NaPF6-containing electrolytes additionally form NaF. DFT calculations show that PC adsorption lowers Na extraction energy and enhances interfacial electronic interactions, facilitating Na release and reductive decomposition. These results establish a direct correlation between solvent-dependent reaction pathways and thermal stability in SIB alloy anodes.

Accelerating rate calorimetry↗
DOE OSTI2024

Layered Sn-Au Thin Films for Increased Electrochemical ATR-SEIRAS Enhancement

Operando electrochemical attenuated total reflection surface-enhanced infrared absorption spectroscopy (EC ATR-SEIRAS) is a valuable method for a fundamental understanding of electrochemical interfaces under real operating conditions. The applicability of this method depends on the ability to tune the optical and catalytic properties of an electrode film, and it thus requires unique optimization for any given material. Motivated by the growing interest in Sn-based electrocatalysts for selective reduction of CO2 to formate species, we investigate several Sn thin-film synthesis routes for the resulting SEIRA signal response. We compare the SEIRA performance of thermally evaporated metallic Sn to a series of Sn-based films on top of a SEIRA-active Au substrate (metallic Sn, oxide-derived metallic Sn, and metal oxide SnOx). Using alkanethiol self-assembled monolayers as a probe, we find that electrodepositing metallic catalyst films on top of SEIRA-active Au substrates yield higher signal relative to thermal evaporation as well as higher signal than the independent SEIRA-active Au underlayer. These observations come despite the fact that thermally evaporated Sn has a significantly higher surface roughness (and thus higher adsorbate population), suggesting specific SEIRA-magnifying effects for the stacked films. Finally, we applied these films to observe the electrochemical conversion of CO2. Differences are observed in spectral features based on the composition of the electrode being either metallic or oxide-derived metallic Sn, implying differences in their respective reaction pathways.

CO2 reduction↗
DOE OSTI2022

Solution Processed Ternary Tin (II) Alloy as Hole–Transport Layer of Sn–Pb Perovskite Solar Cells for Enhanced Efficiency and Stability

Tin-lead (Sn-Pb) narrow bandgap (NBG) perovskites show great potential in both single-junction and all-perovskite tandem solar cells. Sn-Pb perovskite solar cells (PSCs) are still limited by low charge collection efficiency and poor stability. Here, we report a ternary Sn (II) alloy of SnOCl as the hole-transport material (HTM) with a work function of 4.95 eV for Sn-Pb PSCs. The solution processed SnOCl layer has a texture structure which not only reduces the optical loss of the devices but also changes grain growth of Sn-Pb perovskites and boosts the carrier diffusion length to 3.63 μm. The formation of small perovskite grains at the HTM/perovskite interface is suppressed. These result in an almost constant internal quantum efficiency of 96 ± 2% across the absorption spectrum of Sn-Pb perovskites. The SnOCl HTM significantly enhances the stability of Sn-Pb PSCs with 87% of its initial efficiency retained after 1-sun illumination for 1,200 h, and keep 85% efficiency under 85°C thermal stress for 1,500 h. Furthermore, the hybrid HTM further improve the stabilized efficiencies of single-function Sn-Pb PSCs and all-perovskite tandem solar cells to 23.2% and 25.9%, respectively. This discovery opens an avenue to the multi-component metal alloys as HTM in PSCs.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge 0.85 Sn 0.15 on Ge(001)

Germanium–tin (GeSn) alloys are emerging as promising materials for mid-infrared optoelectronics and silicon-compatible photonic devices, owing to their tunable direct bandgap. However, the growth of high-quality GeSn films with high Sn content remains challenging due to strain-induced defect formation. In this study, we investigate the role of film thickness on strain-induced relaxation, defect density, and Sn segregation. A series of five samples with varying thicknesses and ∼15% Sn-containing GeSn layers were grown, ranging from the critical thickness for strain relaxation to the onset of Sn segregation. All GeSn samples were analyzed using X-ray diffraction reciprocal space mapping (XRD-RSM) to explore the evolution of strain-induced relaxation as a function of thickness. Photoluminescence measurements reveal that increasing the GeSn thickness enhances strain relaxation while reducing defect-related emission, indicating a decrease in effective defect density prior to reaching the threshold thickness of GeSn layer. At a thickness of ∼150 nm, the GeSn layer shows the onset of Sn segregation, evident in the XRD-RSM spectrum, marking the threshold thickness for Sn segregation. This work defines an effective growth window in terms of thickness (35 to 150 nm) for fabricating relaxed, defect-suppressed GeSn layers with 15% Sn content. These findings emphasize the crucial role of thickness control in balancing strain relaxation and defect suppression, advancing the fabrication of high-quality, high Sn-content relaxed GeSn using molecular beam epitaxy.

Defects↗
DOE OSTI2022

Crystal structure and magnetic properties in semiconducting Eu 3-δ Zn x Sn y As 3 with Eu-Eu dimers

Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. Here, a new layered magnetic semiconductor, Eu 3-δ Zn x Sn y As 3 , was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu 3-δ Zn x Sn y As 3 is found to crystallize in a hexagonal symmetry with the space group P6 3 /mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ~Eu 2.6 Zn 0.65 Sn 0.85 As 3 , which meets the chemical charge balance. Eu 3-δ Zn x Sn y As 3 is composed of septuple (Eu 1-δ Sn y As 2 )-Eu-(Zn x As)-Eu sequences. The shortest Eu–Eu distance in the system is between two Eu layers separated by Zn x As along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu 3-δ Zn x Sn y As 3 at T N ~ 12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ~0.86 eV. Finally, various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Local ordering in Ge/Ge–Sn semiconductor alloy core/shell nanowires revealed by extended x-ray absorption fine structure (EXAFS)

Short-range atomic order in semiconductor alloys is a relatively unexplored topic that may promote design of new materials with unexpected properties. Here, local atomic ordering is investigated in Ge–Sn alloys, a group-IV system that is attractive for its enhanced optoelectronic properties achievable via a direct gap for Sn concentrations exceeding ≈10 at. %. The substantial misfit strain imposed on Ge–Sn thin films during growth on bulk Si or Ge substrates can induce defect formation; however, misfit strain can be accommodated by growing Ge–Sn alloy films on Ge nanowires, which effectively act as elastically compliant substrates. In this work, Ge core/Ge 1–x Sn x (x ≈ 0.1) shell nanowires were characterized with extended x-ray absorption fine structure (EXAFS) to elucidate their local atomic environment. Simultaneous fitting of high-quality EXAFS data collected at both the Ge K-edge and the Sn K-edge reveals a large (≈ 40%) deficiency of Sn in the first coordination shell around a Sn atom relative to a random alloy, thereby providing the first direct experimental evidence of significant short-range order in this semiconductor alloy system. Furthermore, comparison of path length data from the EXAFS measurements with density functional theory simulations provides alloy atomic structures consistent with this conclusion.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Diffusion of Sn donors in β-Ga 2 O 3

Diffusion of the n-type dopant Sn in β-Ga 2 O 3 is studied using secondary-ion mass spectrometry combined with hybrid functional calculations. The diffusion of Sn from a Sn-doped bulk substrate with surface orientation (001) into an epitaxial layer is observed after heat treatments in the temperature range of 1050–1250 °C. Calculated formation energies of Sn-related and intrinsic defects show that the migration of Sn is mediated by Ga vacancies ( V Ga ) through the formation and dissociation of intermittent mobile V Ga Sn Ga complexes. The evolution of the Sn concentration vs depth profiles after heat treatments can be well described by a reaction–diffusion model. Using model parameters guided by the hybrid functional calculations, we extract a V Ga Sn Ga complex migration barrier of 3.0 ± 0.4 eV with a diffusion coefficient of 2 × 10 –1 cm 2 /s. The extracted migration barrier is consistent with our theoretical predictions using the nudged elastic band method, which shows migration barriers of 3.42, 3.15, and 3.37 eV for the [100], [010], and [001] directions, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The ASAS-SN bright supernova catalogue – V. 2018–2020

We catalogue the 443 bright supernovae (SNe) discovered by the All-Sky Automated Survey for Supernovae (ASAS-SN) in 2018−2020 along with the 519 SNe recovered by ASAS-SN and 516 additional m peak ≤ 18 mag SNe missed by ASAS-SN. Our statistical analysis focuses primarily on the 984 SNe discovered or recovered in ASAS-SN g-band observations. The complete sample of 2427 ASAS-SN SNe includes earlier V-band samples and unrecovered SNe. For each SN, we identify the host galaxy, its UV to mid-IR photometry, and the SN’s offset from the centre of the host. Updated peak magnitudes, redshifts, spectral classifications, and host galaxy identifications supersede earlier results. With the increase of the limiting magnitude to g ≤ 18 mag, the ASAS-SN sample is nearly complete up to m peak = 16.7 mag and is 90 per cent complete for m peak ≤ 17.0 mag. This is an increase from the V-band sample, where it was roughly complete up to m peak = 16.2 mag and 70 per cent complete for m peak ≤ 17.0 mag.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

One-Step Spark Plasma Erosion Processing of Carbon-Coated Sn-Si Nanoparticles for Lithium-Ion Battery Anodes

High density portable energy storage is desirable owing to the energy requirements of portable electronics and electric vehicles. The Li-ion battery’s high energy density could be even further improved through the utilization of alternative materials (instead of carbon) for the anode, such as Sn or Si. Nonetheless, the large volume expansion upon lithiation, up to ~300% for Li 22 Si 5 , causes pulverization and rapid capacity degradation during cycling. Sn also forms a Li 22 Sn 5 compound with the equivalent stoichiometric Li capacity but with enhanced ductility. Nano-sized Si and Sn have demonstrated distinctive nanoscale properties, facilitating the retention of higher capacities, particularly when coated with carbon, which improves mechanical stability. To date, the methods of synthesizing coated Si, Sn, or Si-Sn alloyed nanoparticles are complicated, costly, and not readily scalable to meet the demands of cost-effective manufacturing. Spark plasma erosion in a hydrocarbon dielectric has been explored as a one-step process to produce Sn-Si alloy nanoparticles coated with a thin carbon film, offering a scalable and cost-effective processing route. The resulting Sn-Si particles exhibited a bi-modal size distribution at ~5 nm and ~500 nm and were carbon-coated, as intended, from the hydrocarbon dielectric breakdown. The spark-eroded nanoparticles were thoroughly characterized using TEM/EDS, XPS, AES, SSNMR, and TGA, and their improved electrochemical performance was assessed through half-cell experiments.

25 ENERGY STORAGE↗
DOE OSTI2025

Challenges and Opportunities for Rechargeable Aqueous Sn Metal Batteries

Rechargeable aqueous batteries based on metallic anodes hold tremendous potential of high energy density enabled by the combination of relatively low working potential and large capacity while retaining the intrinsic safety nature and economical value of aqueous systems; However, the realization of these promised advantages relies on the identification of an ideal metal anode chemistry with all these merits. In this review, the emerging Sn metal anode chemistry is examined as such an anode candidate in both acidic and alkaline media, where the inertness of Sn toward hydrogen evolution, flat low voltage profile, and low polarization make it a unique metal anode for aqueous batteries. From a panoramic viewpoint, the key challenges and detrimental issues of Sn metal batteries are discussed, including dead Sn formation, self‐discharge, and electrolyte degradation, as well as strategies for mitigating these issues by constructing robust Sn anodes. New design approaches for more durable and reliable Sn metal batteries are also discussed, with the aim of fully realizing the potential of Sn anode chemistry.

Sn metal↗
DOE OSTI2025

Effect of Sn microalloying on the nucleation of L1 2 Al 3 Zr precipitates in a dilute aluminum-zirconium alloy

While L1 2 -Al 3 Zr nanoprecipitates provide a balance between strengthening and good electrical conductivity, the precipitation of L1 2 -Al 3 Zr in aluminum requires aggressive heat treatments. An improved age-hardening response was observed during isochronal aging of an Al-0.24Zr (wt%) alloy when microalloyed with Sn. A new mechanism termed Low melting point Element-Assisted Nucleation (LEAN) is proposed to explain the lower temperature nucleation of L1 2 -Al 3 Zr precipitates observed in this alloy based on the addition of a low melting point element, such as Sn. Characterization verified the first-principles density functional theory prediction that Zr and Sn atoms cluster during homogenization owing to the favorable binding energy of Zr-Sn-vacancy triplets. Direct microstructural observations revealed these clusters form Sn nanoprecipitates that assist the nucleation of L1 2 -Al 3 Zr at 200°C, where L1 2 -Al 3 Zr precipitation is not expected due to the low diffusivity of Zr atoms in Al. At higher temperatures (≳350°C), the acceleration of L1 2 -Al 3 Zr precipitation is driven by faster Zr diffusion in Al with Sn microalloying and the nuclei formed via the LEAN mechanism. In conclusion, this combination of mechanisms explains the improvement in age hardening through L1 2 -Al 3 Zr precipitation with Sn microalloying.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Progress and outlook of Sn–Pb mixed perovskite solar cells

Abstract Organic–inorganic hybrid perovskites have revolutionized solar cell research owing to their excellent material properties. Most previous research has been done on Pb-based perovskites. Recently, efforts to discover a Pb-free or Pb-less perovskite material with an ideal bandgap ranging 1.1–1.3 eV have led researchers to investigate Sn–Pb mixed perovskites. Sn–Pb mixed perovskites have a bandgap of ~ 1.25 eV, which is suitable for high-efficiency single-junction and perovskite/perovskite tandem solar cells. Moreover, the Pb content of Sn–Pb mixed perovskites is 50–60% lower than that of Pb-based perovskites, partially mitigating the Pb toxicity issue. However, incorporating Sn 2+ into the crystal structure also causes various drawbacks, such as inhomogeneous thin film morphologies, easy oxidation of Sn 2+ , and more vulnerable surface properties. Researchers have made substantial progress in addressing these challenges through improvements in compositional design, structural optimization, precursor design, and surface treatments. In this review, we provide a comprehensive overview of the progress in Sn–Pb mixed perovskite solar cells. Furthermore, we analyze the key variables and trends as well as provide an outlook for future directions in the research on Sn–Pb mixed perovskites. Graphical Abstract

14 SOLAR ENERGY↗
DOE OSTI2025

(NH 3 (CH 2 ) 7 NH 3 ) 2 Sn 3 I 10 , a Vacancy-Ordered Three-Dimensional Tin(II) Perovskite-Derived Semiconductor

Ordering vacancies in hybrid Sn(II) halide semiconductors provides a strategy for preventing uncontrolled oxidation and formation of mobile holes. In this study, we report the structure and optical and electronic properties of (NH 3 (CH 2 ) 7 NH 3 ) 2 Sn 3 I 10 , a vacancy-ordered perovskite derivative with three-dimensional inorganic connectivity. The crystal structure resembles that of a Dion–Jacobson layered perovskite derivative, but with [SnI 5 ] square pyramids bridging the layers. UV–vis diffuse reflectance spectroscopy reveals a sharp onset of light absorption at 1.86(1) eV with the photoluminescence emission maximum at 1.90(1) eV. However, the maximum excitation occurs from 3.42 to 3.81 eV (325 to 370 nm), revealing a significant Stokes shift of 1.3 eV. The electronic properties determined from dark and time-resolved microwave conductivity measurements reveal a minimum carrier mobility of 4.3 × 10 –2 cm 2 V –1 s –1 and a maximum carrier density of 5.96 × 10 16 cm –3 , a uniquely low value for a hybrid Sn(II) halide semiconductor. The transport behavior in combination with first-principles calculations of the electronic band structure and dielectric permittivity suggest polaron-mediated electronic transport, yet the photogenerated carriers have a fast and fluence-dependent nonradiative recombination rate, suggestive of localized “defect-like” states at the band edge. The observed photoluminescence is most consistent with single-ion-like behavior of an asymmetric Sn(II) environment. Together, these results suggest that defect ordering presents a strategy for the reduction of mobile charge carriers at equilibrium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Accelerating σ-Bond Metathesis at Sn(II) Centers

Molecular main-group hydride catalysts are attractive as cheap and Earth-abundant alternatives to transition-metal analogues. In the case of the latter, specific steric and electronic tuning of the metal center through ligand choice has enabled the iterative and rational development of superior catalysts. Analogously, building a deeper understanding of electronic structure-activity relationships for molecular main-group hydrides should facilitate the development of superior main-group hydride catalysts. Herein we report a modular Sn–Ni bimetallic system in which we systematically vary the ancillary ligand on Ni, which in turn tunes the Sn center. This tuning is probed using Sn L 1 XAS as a measure of electron density at the Sn center. We demonstrate that increased electron density at Sn centers accelerates the rate of σ-bond metathesis, and we employ this understanding to develop a highly active Sn-based catalyst for the hydroboration of CO 2 using pinacolborane. Additionally, we demonstrate that engineering London dispersion interactions within the secondary coordination sphere of Sn allows for further rate acceleration. Furthermore, these results show that the electronics of main group catalysts can be controlled without the competing effects of geometry perturbations, and that this manifests in substantial reactivity differences.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Constraining the release of Sn to the ambient melting point following shock loading using time-resolved x-ray diffraction

The formation of liquid following release from a shocked state governs the transition from spall to cavitation and the formation of ejecta in metals. In order to build physics-based models of these processes, it is necessary to critically evaluate the relative importance of kinetics and entropy generation during the release along with the accuracy of multiphase equations of state. Tin (Sn) has served as a testbed for a variety of experiments examining strength and ejecta due to its accessible melt boundary and solid–solid phase transitions. This work presents experiments examining the phase evolution of high purity Sn following the shock and release to ambient stress near the melting point. Sn is found to release to states between its ambient solidus and liquidus from approximately 19 to 33 GPa under uniaxial loading, with the two-phase region being characterized by a reduction in the intensity of the (220), (211) β -Sn doublet. Jetting experiments performed at 27–28 GPa exhibit comparable diffraction patterns with what is observed following the uniaxial release. The solid fractions of β-Sn in the ambient mixed phase region are found to decrease linearly with increasing shock stress as increasing liquid Sn is formed. Here, the results provide much needed information for interpreting measurements of dynamic strength at a high strain rate and experiments examining cavitation and shallow bubble collapse in Sn.

, spall↗
DOE OSTI2026

Mass of 101 Sn and Bayesian extrapolations to the proton drip line

The favorable energy configurations of nuclei at magic numbers of 𝑁 neutrons and 𝑍 protons are fundamental for understanding the evolution of nuclear structure. The 𝑍 = 50 (tin) isotopic chain is a frontier for such studies, with particular interest at and around the doubly magic 100 Sn isotope, for which the mass is a topic of debate. Precise mass values for neutron-deficient isotopes provide necessary anchor points for mass models to test extrapolations near the proton drip line, where experimental studies remain out of reach. In this work, we report a Penning trap mass measurement of 101 Sn . The determined mass excess of −59889.89⁢(96) keV for 101 Sn represents a factor-of-300 improvement over the current precision and indicates that 101 Sn is less bound than previously thought. Mass predictions from a recently developed Bayesian model combination framework employing statistical machine learning and nuclear masses computed within seven global models based on nuclear density functional theory agree within 1⁢𝜎 with experimental masses from the 48 ≤ 𝑍 ≤ 52 isotopic chains. The framework's resilience to new mass data gave confidence in the extrapolation of tin masses down to 𝑁 = 46. Our calculations suggest that 96 Sn is a two-proton drip line nucleus and predict a mass excess of −58090⁢(800) keV for 100 Sn , showing a preference within 1⁢𝜎 for the mass of 100 Sn derived from the 𝛽-delayed 𝑄 value measured at GSI.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy

We report the epitaxial growth of high quality GeSn alloys with Sn compositions up to 21.25 ± 1% by effusion-cell molecular beam epitaxy (MBE). Achieving such a high Sn content with effusion cells is particularly significant, since these sources typically impose stronger radiative heating on the substrate, which is a factor long considered a major obstacle to high-Sn GeSn epitaxy. Contrary to the prevailing assumption that high growth rates are good for suppressing Sn segregation, we demonstrate that carefully controlled low fluxes, combined with stable ultra-low substrate temperatures, enable significant Sn incorporation even under effusion-cell conditions. Structural analyses by high-resolution x-ray diffraction, reciprocal space mapping, atomic force microscopy, and transmission electron microscopy confirm sharp interfaces, high crystallinity, and smooth surfaces at high Sn contents. Furthermore, these findings establish the feasibility of MBE-grown high-Sn GeSn even under diffusion cells, thereby broadening opportunities for Si-compatible photonic and quantum devices.

Alloys↗
DOE OSTI2026

Optimization of Nb 3 Sn sputtering on SRF structures

Superconducting radiofrequency (SRF) cavities are the key technology to compact, high-efficiency, and cost-effective CW SRF accelerators. Further improvements in the efficiency can be realized by using novel materials such as Nb 3 Sn coated on the inner surface of SRF cavities. The Nb 3 Sn coatings enable cavity operation at 4 K, where the Nb 3 Sn coated cavities are already very efficient and have high intrinsic quality factors. Advances in Nb3Sn coatings on the inner surface of SRF cavities showed the potential for this material to significantly cut the capital and operating costs of SRF accelerators. Several approaches have been and are being investigated for coating SRF cavities with Nb 3 Sn. Magnetron sputtering is a versatile technique in that it has been shown to produce Nb 3 Sn films on flat Nb target in a single phase and a precisely controlled thickness, low defect levels, and a favorable morphology. Deposition of Nb 3 Sn films on SRF cavities have also shown promising RF superconducting properties. However, sputter coating of Nb 3 Sn on SRF cavities requires further development to be used in accelerators.

43 PARTICLE ACCELERATORS↗