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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active and greater resistance to shear the metal has, with the exception of rhodium and tungsten, the less transfer to silicon carbide.

Miyoshi, K.↗
NASA NTRS1982

Exit chipping in ID sawing of silicon crystals

The processes involved in exit chipping which may occur in the internal diameter diamond sawing of silicon crystals were examined. An interpretation of chipping observations is given in terms of crack propagation as acted upon by the sawing stresses. Since the exit chips are roughly parallel to saw marks, the general locus of the crack must be determined by contact stresses although the exact locus depends on already existing subfractures located in the kerf region which are caused by more than one abrasive particle. The crack starts at either edge since these are weak areas in flexure. In the more extensive "saw fracture", the fracture plane often changes part-way across the slice to be other than parallel to the saw mark because the speed of the crack accelerates beyond the speed of the blade travel; i.e., outstrips the advance of the contact stress field. The influences of various external factors on the opening of the crack are divided into two types: factors that wedge the crack apart and those that bend the slice away from the crystal. From a consideration of these factors, conditions for minimizing exit chipping are defined.

Dyer, L. D.↗
NASA NTRS1978

Wear of single-crystal silicon carbide in contact with various metals in vacuum

Sliding friction experiments were conducted in vacuum with single crystal silicon carbide (0001) surface in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. The hexagon shaped cracking and fracturing of silicon carbide that occurred is believed to be due to cleavages of both the prismatic and basal planes. The silicon carbide wear debris, which was produced by brittle fracture, slides or rolls on both the metal and silicon carbide and produces grooves and indentations on these surfaces. The wear scars of aluminum and titanium, which have much stronger chemical affinity for silicon and carbon, are generally rougher than those of the other metals. Fracturing and cracking along the grain boundary of rhodium and tungsten were observed. These may be primarily due to the greater shear moduli of the metals.

Miyoshi, K.↗
NASA NTRS1979

Friction and fracture of single-crystal silicon carbide in contact with itself and titanium

An investigation was conducted to examine the friction properties and mechanical behavior of single-crystal silicon carbide (0001) surface sliding against itself and against polycrystalline titanium. The results indicate hexagon-shaped pits of silicon carbide and the formation of platelet hexagon-shaped wear debris of silicon carbide due to cleavages of both prismatic and basal planes as a result of silicon carbide sliding against itself. The fracturing of silicon carbide also occurs near the adhesive bond to titanium. The wear debris produced by brittle fracture plows the titanium and transfers to it. Further, the silicon carbide wear debris, which adhered and transferred to titanium, plows the silicon carbide surface and transfers back to it

Miyoshi, K.↗
NASA NTRS1980

The effect of growth rate, diameter and impurity concentration on structure in Czochralski silicon crystal growth

It is demonstrated that maximum growth rates of up to 80% of the theoretical limit can be attained in Czochralski-grown silicon crystals while maintaining single crystal structure. Attaining the other 20% increase is dependent on design changes in the grower, to reduce the temperature gradient in the liquid while increasing the gradient in the solid. The conclusions of Hopkins et al. (1977) on the effect of diameter on the breakdown of structure at fast growth rates are substantiated. Copper was utilized as the test impurity. At large diameters (greater than 7.5 cm), concentrations of greater than 1 ppm copper were attained in the solid (45,000 ppm in the liquid) without breakdown at maximum growth speeds. For smaller diameter crystals, the sensitivity of impurities is much more apparent. For solar cell applications, impurities will limit cell performance before they cause crystal breakdown for fast growth rates of large diameter crystals.

Digges, T. G., Jr.↗
DOE OSTI2021

A polarization-switch effect of silicon crystals under multiple-beam diffraction geometry

On the basis of rigorous dynamical-theory calculations, a complete X-ray polarization-switch effect of silicon crystals at the exact multiple-beam diffraction condition is demonstrated in this paper. The underlying physical mechanism of this unique phenomenon can be revealed using a simple multiple-wave propagation and interference model. The constructive and destructive interference of the multiple detoured-diffraction beams along the direction of the primary diffracted beam directly leads to the complete polarization switch. This phenomenon can be realized using both synchrotron and laboratory X-ray sources at many discrete wavelengths, and used to design a novel crystal-based polarizer to achieve a 90° polarization rotation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1980

Adhesion, friction, and wear of binary alloys in contact with single-crystal silicon carbide

Sliding friction experiments, conducted with various iron base alloys (alloying elements are Ti, Cr, Mn, Ni, Rh and W) in contact with a single crystal silicon carbide /0001/ surface in vacuum are discussed. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is as an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

Miyoshi, K.↗
NASA NTRS1995

Single crystal silicon filaments fabricated in SOI: A potential IR source for a microfabricated photometric CO2 sensor

The objective of this project was to design, fabricate, and test single crystal silicon filaments as potential black body IR sources for a spectrophotometric CO2 sensing microsystem. The design and fabrication of the silicon-on-insulator (SOI) filaments are summarized and figures showing the composite layout of the filament die (which contains four filaments of different lengths -- 500 microns, 1 mm, 1.5 mm and 2 mm -- and equal widths of 15 microns) are presented. The composite includes four mask layers: (1) silicon - defines the filament dimensions and contact pads; (2) release pit - defines the oxide removed from under the filament and hence, the length of the released filament; (3) Pyrex pit - defines the pit etched in the Pyrex cap (not used); and (4) metal - defines a metal pattern on the contact pads or used as a contact hole etch. I/V characteristics testing of the fabricated SOI filaments is described along with the nitride-coating procedures carried out to prevent oxidation and resistance instability.

Tu, Juliana↗
NASA NTRS1980

The adhesion, friction, and wear of binary alloys in contact with single-crystal silicon carbide

Sliding friction experiments were conducted with various iron-base alloys (alloying elements were Ti, Cr, Ni, Rh, and W) in contact with a single-crystal silicon carbide (0001) surface in vacuum. Results indicate atomic size misfit and concentration of alloying elements play a dominant role in controlling adhesion, friction, and wear properties of iron-base binary alloys. The controlling mechanism of the alloy properties is an intrinsic effect involving the resistance to shear fracture of cohesive bonding in the alloy. The coefficient of friction generally increases with an increase in solute concentration. The coefficient of friction increases as the solute-to-iron atomic radius ratio increases or decreases from unity. Alloys having higher solute concentration produce more transfer to silicon carbide than do alloys having low solute concentrations. The chemical activity of the alloying element is also an important parameter in controlling adhesion and friction of alloys.

Miyoshi, K.↗
NASA NTRS1979

The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh and W) in contact with single crystal silicon carbide riders. Results indicate that the friction force in the plowing of metal and the groove height (corresponding to the wear volume of the groove) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease, and the contact pressure increases with an increase in solute content of binary alloys. There appears to be very good correlation of the solute to iron atomic ratio with the decreasing rate of change of coefficient of friction, the decreasing rate of change of groove height and the increasing rate of change of contact pressure with increasing solute content. These rates of change increase as the solute to iron atomic radius ratio increases or decreases from unity.

Miyoshi, K.↗
NASA NTRS1979

The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. Results indicate that the coefficient of friction and groove height (corresponding to the wear volume) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease with an increase in solute content of binary alloys. A separate correlation exists between the solute to iron atomic radius ratio and the decreasing rates of change of coefficient of friction and groove height with increasing solute content. These rates of change are minimum at a solute to iron radius ratio of unity. They increase as the atomic ratio increases or decreases linearly from unity. The correlations indicate that atomic size is an important parameter in controlling friction and wear of alloys.

Miyoshi, K.↗
NASA NTRS1982

Surface chemistry and wear behavior of single-crystal silicon carbide sliding against iron at temperatures to 1500 C in vacuum

X-ray photoelectron and Auger electron spectroscopy analyses and morphological studies of wear and metal transfer were conducted with a single-crystal silicon carbide 0001 surface in contact with iron at various temperatures to 1500 C in a vacuum of 10 to the minus 8th power pascal. The results indicate that below 800 C, carbide-carbon and silicon are primarily seen on the silicon carbide surface. Above 800 C the graphite increases rapidly with increase in temperature. The outermost surficial layer, which consists mostly of graphite and little silicon at temperatures above 1200 C is about 2 nm thick. A thicker layer, which consists of a mixture of graphite, carbide, and silicon is approximately 100 nm thick. The closer the surface sliding temperature is to 800 C, the more the metal transfer produced. Above 800 C, there was a transfer of rough, discontinuous, and thin iron debris instead of smooth, continuous and thin iron film which was observed to transfer below 800 C. Two kinds of fracture pits were observed on the silicon carbide surface: (1) a pit with a spherical asperity; and (2) multiangular shaped pits.

Miyoshi, K.↗
NASA NTRS2016

Lightweight and High-Resolution Single Crystal Silicon Optics for X-ray Astronomy

We describe an approach to building mirror assemblies for next generation X-ray telescopes. It incorporates knowledge and lessons learned from building existing telescopes, including Chandra, XMM-Newton, Suzaku, and NuSTAR, as well as from our direct experience of the last 15 years developing mirror technology for the Constellation-X and International X-ray Observatory mission concepts. This approach combines single crystal silicon and precision polishing, thus has the potential of achieving the highest possible angular resolution with the least possible mass. Moreover, it is simple, consisting of several technical elements that can be developed independently in parallel. Lastly, it is highly amenable to mass production, therefore enabling the making of telescopes of very large photon collecting areas.

X-ray optics↗
NASA NTRS2001

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗
NASA NTRS1980

Materials of construction for silicon crystal growth

The performance of materials for construction and in contact with molten silicon for crystal growth is presented. The basis for selection considers physical compatibility, such as thermal expansion and strength, as well as chemical compatibility as indicated by contamination of the silicon. A number of new high technology materials are included as well as data on those previously used. Emphasis is placed on the sources and processing of such materials in that results are frequently dependent on the way a material is prepared as well as its intrinsic constituents.

Leipold, M. H.↗
NASA NTRS1975

Silicon crystal as a low work function collector

A test vehicle with a low work function collector which can be incorporated in a thermionic converter was constructed from standard vacuum components including an ultrahigh vacuum ion pump. The collector assembly was fabricated by diffusion bonding a (100) oriented silicon single crystal to a molybdenum block. The silicon surface was treated with cesium and oxygen to produce an NEA-type condition and the results were tested by photoemission and work function measurements. An n-type silicon collector was successfully activated to a work function of 1.0 eV, which was verified by photoemission spectral yield measurements. The stability test of an activated surface at elevated temperatures was conducted in the range from room temperature to 619 K, which was slightly lower than the designed collector temperature of 700 K. The work function measurements clearly demonstrated that the behavior of cesium replenishment on the activated Si surface was similar in nature to that of a metallic surface; that is, the loss of cesium by thermal desorption could be compensated by maintaining an adequate vapor pressure of cesium.

Chang, K. H.↗