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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Collective excitations and low-energy ionization signatures of relativistic particles in silicon detectors

Abstract Solid-state detectors with a low energy threshold have several applications, including searches of non-relativistic halo dark-matter particles with sub-GeV masses. When searching for relativistic, beyond-the-Standard-Model particles with enhanced cross sections for small energy transfers, a small detector with a low energy threshold may have better sensitivity than a larger detector with a higher energy threshold. In this paper, we calculate the low-energy ionization spectrum from high-velocity particles scattering in a dielectric material. We consider the full material response including the excitation of bulk plasmons. We generalize the energy-loss function to relativistic kinematics, and benchmark existing tools used for halo dark-matter scattering against electron energy-loss spectroscopy data. Compared to calculations commonly used in the literature, such as the Photo-Absorption-Ionization model or the free-electron model, including collective effects shifts the recoil ionization spectrum towards higher energies, typically peaking around 4–6 electron-hole pairs. We apply our results to the three benchmark examples: millicharged particles produced in a beam, neutrinos with a magnetic dipole moment produced in a reactor, and upscattered dark-matter particles. Our results show that the proper inclusion of collective effects typically enhances a detector’s sensitivity to these particles, since detector backgrounds, such as dark counts, peak at lower energies.

Physics↗
NASA NTRS1968

Silicon detectors aboard Surveyor V.

Conventional and Li-drifted Si charged particle detectors for alpha scattering experiment aboard Surveyor 5 noting operating characteristics, performance and electrical stability

Kristoff, J. J.↗
NASA NTRS1976

Characterization of IRAS doped silicon detectors

Data are presented from a range of operating conditions which include background photo flux, operating temperature, and frequency. Each detector is equipped with a load resistor, a cryogenic field effect transistor preamplifier, and a temperature sensor. Data are also presented of detector signal, noise spectra, noise equivalent power, and spectral response.

Source record↗
NASA NTRS1988

Return stroke velocities and currents using a solid state silicon detector system

A small, portable device has been developed to measure return stroke velocities. With the device, velocities from 135 strokes that consist of 92 natural return strokes and 43 triggered return strokes have been analyzed. The average return stroke velocity for longer channels, greater than 500 meters, is 1.2 + or - 0.3 x 10 to the 8th m/s for both natural and triggered return strokes. For shorter channel lengths, less than 500 m, natural lightning has a statistically higher average return stroke velocity of 1.9 + or - 0.7 x 10 to the 8th m/s than triggered lightning with an average return stroke velocity of 1.4 + or - 0.4 x 10 to the 8th m/s. Using the transmission line model of the return stroke, natural lightning has a peak current distribution that is log-normal with a median value of 19 kA. Return stroke velocities and currents were determined for two distant single stroke natural positive cloud-to-ground flashes. The velocities were 1.0 and 1.7 x 10 to the 8th ms/s while the estimated peak current for each positive flash was over 125 kA.

Mach, Douglas M.↗
NASA NTRS2000

Charge Detector for the Imaging Calorimeter for ACCESS (ICA)

NASA's Advanced Cosmic Ray Experiment for the Space Station (ACCESS) Mission is planned to consist of a transition radiation detector (TRD) and a thin ionization calorimeter. In order to measure the charge of the primary cosmic ray, it is necessary for the calorimeter to have its own charge detector. Silicon detectors are chosen for the charge detector because of their excellent resolution, small size and nearly square shape. Monte Carlo simulations are performed to find the probability of misidentifying protons as alpha particles due to backscattered radiation from the calorimeter. Simulations were also used to investigate identifying primary cosmic rays that fragmented in the TRD before reaching the calorimeter. For this study algorithms have been developed for determining a direction of the core shower in the calorimeter. These algorithms are used to find the approximate location of the primary particle in the silicon detectors. Results show the probability to misidentify the charge depends upon the energy and direction of the primary particles.

Lee, Jeongin↗
DOE OSTI2024

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO 2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p⁺ and n⁺ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm² even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm² in the studied p⁺ and n⁺ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm² with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2005

Development of Ultra-High Sensivity Silicon Carbide Detectors

A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.

Yan, Feng↗
DOE OSTI2025

The ladder and readout cables of intermediate silicon strip detector for sPHENIX

A new silicon-strip-type detector was developed for precise charged-particle tracking in the central rapidity region of heavy ion collisions. A new detector and collaboration at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory is sPHENIX, which is a major upgrade of the PHENIX detector. The intermediate tracker (INTT) is part of the advanced tracking system of the sPHENIX detector complex together with a CMOS monolithic-active-pixel-sensor based silicon-pixel vertex detector, a time-projection chamber, and a micromegas-based detector. The INTT detector is barrel shaped and comprises 56 silicon ladders. Two different types of strip sensors of 78 micron pitch and 320 micron thick are mounted on each half of a silicon ladder. Each strip sensor is segmented into 8 × 2 and 5 × 2 blocks with lengths of 16 and 20 mm. Strips are read out with a silicon strip-readout (FPHX) chip. In order to transmit massive data from the FPHX to the down stream readout electronics card (ROC), a series of long and high speed readout cables were developed. This document focuses on the silicon ladder, the readout cables, and the ROC of the INTT. The radiation hardness is studied for some parts of the INTT devices in the last part of this document, since the INTT employed some materials from the technology frontier of the industry whose radiation hardness is not necessarily well known.

43 PARTICLE ACCELERATORS↗
NASA NTRS1991

Cosmic ray positron research and silicon track detector development

The purpose was to conduct research on: (1) position sensing detector systems, particularly those based upon silicon detectors, for use in future balloon and satellite experiments; and (2) positrons, electrons, proton, anti-protons, and helium particles as measured by the NASA NMSU Balloon Magnet Facility.

Jones, W. Vernon↗
NASA NTRS1996

Characterization of Large-Area Silicon Ionization Detectors for the ACE Mission

We report on extensive tests of large-area (10cm diameter) high-purity ion-implanted silicon detectors for th Solar Isotope Spectrometer (SIS), and lithium-drifted silicon detetors for the Cosmic Ray Isotope Spectrometer (CRIS), which are under development for launch on the Advanced Composition Explorer (ACE) mission.

silicon↗
NASA NTRS1981

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Viehmann, W.↗
NASA NTRS1991

High resolution, low energy avalanche photodiode X-ray detectors

Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI2, these device operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI2. In addition, they are rugged and appear to be indefinitely stable.

Farrell, R.↗