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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Development and evaluation of die materials for use in the growth of silicon ribbons by the inverted ribbon growth process, task 2, LSSA project

Silicon sessile drop experiments were performed on a variety of commercially available refractory carbides, nitrides, oxides, and borides to examine the potential of these materials for applications involving either direct contact with molten silicon or as substrates for CVD coatings in the fabrication of dies and crucibles for containing molten silicon. Simultaneous experiments were also conducted with CVD layers of SiC, Si3N4, and SiOxNy. Silicon nitride layers, deposited with NH3:SiH4 ratios ranging from 100:1 down to 5:1, were examined in sessile drop experiments to determine if the layers are degraded as a result of using lower reagent ratios. Preliminary experiments were undertaken on the stability of CVD Si3N4 near the melting point of silicon. Silicon ribbon segments were grown from vitreous carbon dies which had been coated with CVD Si3N4. Depending upon the purity of the die materials, ribbon resistivity values up to 40 Omega cm were obtained.

Duffy, M. T.↗
NASA NTRS1977

Synthesis of silane and silicon in a non-equilibrium plasma jet

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Calcote, H. F.↗
NASA NTRS1978

Low cost silicon solar array project: Feasibility of low-cost, high-volume production of silane and pyrolysis of silane to semiconductor-grade silicon

Silicon epitaxy analysis of silane produced in the Process Development Unit operating in a completely integrated mode consuming only hydrogen and metallurgical silicon resulted in film resistivities of up to 120 ohms cm N type. Preliminary kinetic studies of dichlorosilane disproportionation in the liquid phase have shown that 11.59% SiH4 is formed at equilibrium after 12 minutes contact time at 56 C. The fluid-bed reactor was operated continuously for 48 hours with a mixture of one percent silane in helium as the fluidizing gas. A high silane pyrolysis efficiency was obtained without the generation of excessive fines. Gas flow conditions near the base of the reactor were unfavorable for maintaining a bubbling bed with good heat transfer characteristics. Consequently, a porous agglomerate formed in the lower portion of the reactor. Dense coherent plating was obtained on the silicon seed particles which had remained fluidizied throughout the experiment.

Breneman, W. C.↗
NASA NTRS1980

The middle-infrared spectrum of Saturn - Evidence for phosphine and upper limits to other trace atmospheric constituents

Observations of Saturn at high spectral resolution in the middle-IR spectral region (2.5-5.6 microns) were obtained using a Fourier spectrometer at ground-based and airborne observatories. These spectra establish that PH3 exists on Saturn with an abundance at least equal to the solar P/H value, and probably enhanced by about a factor of 2. No evidence is found for gaseous or solid NH3 on Saturn throughout this spectral region, and upper limits to several other molecules (H2O, HCN, SiH4, and GeH4) are determined. Frequent comparisons of the spectral data for Saturn with observations and interpretations of IR studies of Jupiter show that these two planetary atmospheres are chemically similar, with major observational differences accounted for by reduced H2O and NH3 abundances in Saturn's colder atmosphere.

Larson, H. P.↗
NASA NTRS1981

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗
NASA NTRS1982

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗
NASA NTRS1983

Transition probability of the Si III 189.2-nm intersystem line

Measurement of the lifetime of the metastable 3s3p(3)P(0)1 level of Si(2+) (Si III), which decays by photon emission at 189.2 nm to the 3s2(1)S0 state, is reported. The data were taken from spontaneous emission from metastable Si III stored in an RF ion trap. The Si III ions were produced through electron bombardment of SiH4 and SiF4 at pressures of 1/100,000,000-1/10,000,000 Torr. A photomultiplier was employed to count the photon emissions from the transitions. A total of 11 decay curves were generated for analysis, with Poisson statistics used to set the uncertainties at within 8 pct. Significant systematic effects were controlled, and the lifetime was found to be within 3.6 microsec of 59.9 microsec. The method used is concluded valid for determining the lifetimes of metastable levels of low-Z ions with low charge, and thereby the transition probabilities.

Kwong, H. S.↗
NASA NTRS1984

A comprehensive model to determine the effects of temperature and species fluctuations on reaction rates in turbulent reaction flows

The use of silane (SiH4) as an effective ignitor and flame stabilizing pilot fuel is well documented. A reliable chemical kinetic mechanism for prediction of its behavior at the conditions encountered in the combustor of a SCRAMJET engine was calculated. The effects of hydrogen addition on hydrocarbon ignition and flame stabilization as a means for reduction of lengthy ignition delays and reaction times were studied. The ranges of applicability of chemical kinetic models of hydrogen-air combustors were also investigated. The CHARNAL computer code was applied to the turbulent reaction rate modeling.

Magnotti, F.↗
NASA NTRS1984

Photodeposition of Nitride Insulators on 3-5 Substrates

Laser assisted chemical vapor deposition (LCVD) of nitride insulators, using an excimer laser operating on either KrF or ArF transitions (248 nm or 193 nm respectively) was explored. The properties of silicon nitride films Deposited with 193 nm photons on quartz and silicon substrates in a SiH4, NH3, N2 and He mixture are discussed. Aluminum films were deposited at substrate temperatures from room temperature to 200 C using 248 nm or 193 nm photons to dissociate trimethylaluminum (TMA). Deposition of Al films were investigated to isolate problems associated with TMA such as C and O contamination during AlN depositions. The Al film properties were evaluated on SiO2 and Si substrates. Preliminary results were obtained for aluminum nitride films using TMA and NH3 as the gas phase Al and N donors. The properties of Cr films deposited over areas 5 square cm using 193 nm or 248 nm photons to dissociate Cr(CO) were investigated.

Collins, G. J.↗
NASA NTRS1983

Preliminary study of a radiantly heated fluidized bed for the production of high purity silicon

The preparation of very pure silicon from silane (SIH4) using radiant heating of the hot silicon particles of a fluidized bed is discussed. The fraction of electrical energy supplied to the heater which is actually absorbed by the particles and the heat transfer coefficient between the hot bed and the cool distributor plate were investigated. The experimental design is presented and the results of the study are summarized.

Levenspiel, O.↗
NASA NTRS1984

Fines in fluidized bed silane pyrolysis

Silicon deposition on silicon seed particles by silane pyrolysis in a fluidized-bed reactor is investigated as a low-cost, high-throughput method to produce high-purity polysilicon for solar-cell applications. Studies of fines, particles 0.1-10 microns diam, initiated from homogeneous decomposition in the reactor were conducted using 2 and 6-in-diam fluidized beds. The studies show functional dependences of fines elutriation on silane feed concentration, temperature, gas velocity, and bubble size. The observation that the fines elutriation is generally below 10 percent of the silicon-in-silane feed is attributed to scavenging by large particles in an environment of less free space for homogeneous nucleation. Preliminary results suggest that, with proper conditions and distributor design, high-silane-concentration (over 50 percent SiH4 in H2) feed may be used.

Hsu, G.↗
NASA NTRS1984

Silicon nitride films deposited with an electron beam created plasma

The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

Bishop, D. C.↗
NASA NTRS1985

Fluidized-Bed Particles Scavenge Silicon Fines

Waste reduced, and silicon production rate improved. In new process silicon formed by thermal decomposition of SiH4. Part of silicon formed on silicon seed particles as result of surface chemical reaction. However, silicon formed by homogeneous reaction in gas phase tends to form aggregates of silicon atoms, which appear as fine particles (like dust). Believed that scavenging action of seed particles enables large fraction fines to be incorporated onto seed surface. This mode of growth confirmed by electron microscopy photographs.

Hsu, G. C.↗
NASA NTRS1986

Extracting Silicon Product From Fluidized-Bed Reactors

Silicon particles continuously removed from bottom of fluidizedbed reactor when grown to large size. In reactor, silane (SiH4) flows through bed of small silicon seed particles at temperature of 650 degrees to 700 degrees C. Silane decomposes into silicon vapor and hydrogen gas, and vapor deposits as solid on seed particles. With withdrawal system, reactor operates continuously.

Hsu, G. C.↗
NASA NTRS1984

Homogeneous condensation of gaseous mixtures of Si, Fe, O, N, and C in relative cosmic abundance and implications for astronomical condensation

The pressure versus temperature curves for homogeneous nucleation and condensation of two gaseous mixtures with nearly relative solar abundance of Si, Fe, O, N, and C in an excess of H were determined experimentally. Mixtures of CO, Fe(CO)5, H2, SiH4, and N2O in Ar were heated behind reflected shocks in a shock tube. The nucleation and condensation, which took place in the subsequent gas-dynamic expansion (cooling phase), was monitored by light scattering and turbidity. Grain morphologies and crystalline phases present in the condensates were determined by electron microscopy. These data cast doubt on the validity of both equilibrium and classical nucleation theoretical approaches to predict homogeneous condensation in a solar nebula or stellar atmosphere.

Stephens, J. R.↗
NASA NTRS1985

Theoretical studies of the ignition and combustion of silane-hydrogen-air mixtures

A chemical kinetic mechanism is proposed for the combustion of silane-hydrogen-oxygen-nitrogen mixtures in the initial temperature range from 800K to 1250K and pressure range from 0.5 to 1.35 atm. The mechanism yields results which are in agreement with published ignition delay times obtained from shock tube experiments. Comparisons between the results obtained using the proposed mechanism and that of an alternative mechanism reveal that the former predicts appreciably shorter ignition delay times, but a flame blowout envelope which is shifted so as to decrease the stable flame region. Over much of the thermodynamic range examined, the mechanism predicts long reaction times. A three step global mechanism is proposed which closely models the ignition phase of SiH4 - H2 - air combustion; however, the reaction phase is less well reproduced by the global model. The necessity for additional experimental data to further assess the proposed models is stressed.

Chinitz, W.↗
NASA NTRS1984

The far-infrared laser magnetic resonance spectrum of the SiH radical and determination of ground state parameters

The far-infrared laser magnetic resonance spectrum of the SiH radical in the v = O level of its X2Pi state has been recorded. The signals are rather weak. The molecules were generated in the reaction between fluorine atoms and SiH4. Rotational transitions have been detected in both 2Pi1/2 and 2Pi3/2 spin components but no fine structure transitions between the spin components were observed. Proton hyperfine splittings were resolved on some lines. The measurements have been analyzed, subjected to a least-squares fit using an effective Hamiltonian, and the appropriate molecular parameters determined. The weakness of the spectrum and the failure of attempts to power saturate favorable lines are both consistent with a small value for the electric dipole moment for SiH.

Brown, J. M.↗
NASA NTRS1985

Experimental and Theoretical Analysis of Chemical Vapor Deposition with Prediction of Gravity Effects

A combined experimental and theoretical study to characterize the effects of gravitationally-induced transport on atmospheric pressure silicon epitaxy by SiH4 pyrolysis is planned. Experimentally, flow regimes in which free convective transport contributes to the Chemical Vapor Deposition (CVD) process will be identified, and, for these conditions, the flow and deposition process will be characterized. Specifically, this will include measurements of three dimensional temperature variations using in situ Rayleigh scattering, gas phase composition profiles using laser absorption and fluorescence techniques, and deposition rates and defect densities. Subsequently, the free convective transport contribution to the CVD process will be minimized and/or altered while leaving deposition chemistry unaltered, and the characterization will be repeated. Based on these analyses, the effects of gravitationally-induced transport on atmospheric pressure CVD will be assessed.

Charter D. Stinespring↗