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Raman study of amorphization in nanocrystalline 3C-SiC irradiated with C+ and He+ ions
This study examines C+ and He+ ion irradiation induced amorphization processes in 3C-SiC nanograins embedded in an amorphous SiC matrix. Raman spectroscopy and Rutherford backscattering spectrometry are used for damage characterization. SiC grains with an average size of either ~6 or ~20 nm were observed to be fully amorphized to a lower dose at room temperature compared to their monocrystalline counterpart under the identical irradiation condition. In addition to damage accumulation induced amorphization in the grains, preferential amorphization at the crystalline/amorphous interfaces could play a significant role. This interface-driven amorphization proceeds at comparable rates for C+ and He+ ion irradiations. The results may have an important implication for nanocrystalline SiC to be applied in advanced nuclear reactors.
A SiC NMOS Linear Voltage Regulator for High-Temperature Applications
The first SiC integrated circuit linear voltage regulator is reported. The voltage regulator uses a 20-V supply and generates an output of 15 V, adjustable down to 10 V. It was designed for loads of up to 2 A over a temperature range of 25-225 degrees C. It was, however, successfully tested up to 300 degrees C. The voltage regulator demonstrated load regulations of 1.49% and 9% for a 2-A load at temperatures of 25 and 300 degrees C, respectively. However, the load regulation is less than 2% up to 300 degrees C for a 1-A load. The line regulation with a 2-A load at 25 and 300 degrees C was 17 and 296 mV/V, respectively. The regulator was fabricated in a Cree 4H-SiC 2-mu m experimental process and consists of 1000, 32/2-mu m NMOS depletion MOSFETs as the pass device, an integrated error amplifier with enhancement MOSFETs, and resistor loads, and uses external feedback and compensation networks to ensure operational integrity. It was designed to be integrated with high-voltage vertical power MOSFETs on the same SiC substrate. It also serves as a guide to future attempts for voltage regulation in any type of integrated SiC circuitry.
Mechanical degradation of duplex SiC-fiber reinforced SiC matrix composite tubes under a controlled high-temperature steam environment
This paper describes results from the mechanical evaluation of unirradiated SiC fiber–reinforced SiC matrix composite tubes under a controlled high-temperature steam environment. The experiments were aimed at identifying key material degradation behavior under environments relevant to loss-of-coolant accidents of light water reactors. Mechanical tests of the SiC composite tubes at 1000 °C under steam and inert environments were conducted using a unique test capability. Further, the material tested was a duplex tube with a thick monolithic SiC layer on the outer surface. The tubes were subjected to preloading at ~100 MPa in tension before exposure to high-temperature steam with up to 75% of the preload at a constant displacement. In the presence of matrix cracks, the steam exposure caused embrittlement of the SiC composite tubes and failure at a stress level below the pretest stress. The material degradation was explained by a fiber oxidation model, which can be applied to various SiC cladding concepts. The embrittlement could be a limiting factor for using SiC cladding subjected to loss-of-coolant accident conditions.
Deformation analysis of SiC-SiC channel box for BWR applications
Silicon carbide fiber-reinforced silicon carbide matrix (SiC-SiC) composites are being considered as components in light water reactor cores to improve accident tolerance, including channel boxes and fuel cladding. In the nuclear reactor environment, core components like a channel box will be exposed to neutron and other radiation damage and temperature gradients. To ensure reliable and safe operation of a SiC-SiC channel box, it is important to assess its deformation behavior under in-reactor conditions including the expected neutron flux and temperature distributions. In particular, this work has evaluated the effect of non-uniform dimensional changes caused by spatially varying neutron flux and temperatures on the deformation behavior of the channel box over the course of one year. These analyses have been performed using the fuel performance modeling code BISON and the commercial finite element analysis code Abaqus, based on fast flux and temperature boundary conditions that have been calculated using the neutronics and thermal-hydraulics codes Serpent and CTF, respectively. The dependence of dimensions and thermophysical properties on fast flux and temperature has been incorporated into the material models. These initial results indicate significant bowing of the channel box with a lateral displacement greater than 6.5 mm. The channel box bowing behavior is time dependent and driven by the temperature dependence of the SiC irradiation-induced swelling and the neutron flux/fluence gradients. The bowing behavior gradually recovers during the course of the operating cycle as the swelling of the SiC-SiC material saturates. Furthermore, the bending relaxation due to temperature gradients does not fully recover and residual bending remains after the swelling saturates in the entire channel box.
Nanocrystalline SiC and Ti 3 SiC 2 Alloys for Reactor Materials: Thermal and Mechanical Properties
SiC-polymers (pure polycarbosilane and polycarbosilane filled with SiC-particles) are being combined with Si and TiC powders to create a new class of polymer-derived ceramics for consideration as advanced nuclear materials in a variety of applications. Compared to pure SiC these materials have increased fracture toughness with only slightly reduced thermal conductivity. Future work with carbon nanotube (CNT) mats will be introduced with the potential to increase the thermal conductivity and the fracture toughness. At present, this report documents the fabrication of a new class of monolithic polymer derived ceramics, SiC + SiC/Ti 3 SiC 2 dual phase materials. The fracture toughness of the dual phase material was measured to be significantly greater than Hexoloy SiC using indentation fracture toughness testing. However, thermal conductivity of the dual phase material was reduced compared to Hexoloy SiC, but was still appreciable, with conductivities in the range of 40 to 60 W/(m K). This report includes synthesis details, optical and scanning electron microscopy images, compositional data, fracture toughness, and thermal conductivity data.
Associations of Pd, U and Ag in the SiC layer of neutron-irradiated TRISO fuel
Not Available
Dimensional stability and anisotropy of SiC and SiC-based composites in transition swelling regime
Swelling, or volumetric expansion, is an inevitable consequence of the atomic displacement damage in crystalline silicon carbide (SiC) caused by energetic neutron irradiation. Because of its steep temperature and dose dependence, understanding swelling is essential for designing SiC-based components for nuclear applications. Here in this study, swelling behaviors of monolithic CVD SiC and nuclear grade SiC fiber – SiC matrix (SiC/SiC) composites were accurately determined, supported by the irradiation temperature determination for individual samples, following neutron irradiation within the lower transition swelling temperature regime. Slightly anisotropic swelling behaviors were found for the SiC/SiC samples and attributed primarily to the combined effects of the pre-existing microcracking, fiber architecture, and specimen dimension. A semi-empirical model of SiC swelling was calibrated and presented. Finally, implications of the refined model to selected swelling-related issues for SiC-based nuclar reactor components are discussed.
Microstructural evolution of 3C-SiC exposed to simultaneous neutron irradiation and helium implantation
The synergism of transmutant helium and irradiation defects is critically important to understand the performance of SiC when in service in nuclear environments. In this study, we exposed 3C-SiC in contact with a 2 μm Ni foil to neutron irradiation at 500 °C to 29 dpa in the high flux isotope reactor to simulate the simultaneous introduction of helium and irradiation defects into SiC. The combination of TEM observations and thermal desorption measurements helps to elucidate the impact of helium on the microstructural evolution in 3C-SiC. Thermal helium desorption spectra from ion-implanted and neutron-irradiated SiC showed a completely different desorption behavior in terms of the peak position and helium desorption flux. The identification of possible helium trapping sites was attempted by applying the first order dissociation model to the measured thermal helium desorption spectra. TEM observations of the neutron-irradiated samples showed that the presence of helium facilitated the stabilization of the defect clusters and promoted the formation of visible helium bubbles in SiC subject to simultaneous neutron irradiation and in-situ He implantation. Following the subsequent heat treatment during the thermal desorption measurements, large faceted helium bubbles were found along grain boundaries in the neutron-irradiated SiC with in-situ He implantation, while the helium bubbles in the grain interior were relatively smaller than those found in the neutron-irradiated sample without in-situ He implantation due to the reduced mobility of He-defect clusters. In conclusion, the He contents contained in the neutron-irradiated samples were quantified based on the experimental data from TEM and thermal desorption measurements.
Growth of Defect-Free 3C-Sic on 4H- and 6H-SIC Mesas Using Step-Free Surface Heteroepitaxy
A new growth process, herein named step-free surface heteroepitaxy, has achieved 3C-SiC films completely free of double positioning boundaries and stacking faults on 4H-SiC and 6H-SiC substrate mesas. The process is based upon the initial 2-dimensional nucleation and lateral expansion of a single island of 3C-SiC on a 4H- or 6H-SiC mesa surface that is completely free of bilayer surface steps. Our experimental results indicate that substrate-epilayer in-plane lattice mismatch (Delta/a = 0.0854% for 3C/4H) is at least partially relieved parallel to the interface in the initial bilayers of the heterofilm, producing an at least partially relaxed 3C-SiC film without dislocations that undesirably thread through the thickness of the epilayer. This result should enable realization of improved 3C-SiC devices.
Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques
Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).
Amorphization resistance of nanocrystalline 3C-SiC implanted with H2+ ions
Compared to single-crystal SiC, nanocrystalline SiC with high densities of stacking faults has been reported to be much more resistant to amorphization under self-ion and electron irradiations. This study examines H2+ ion irradiation-induced amorphization in nanocrystalline 3C-SiC with dense stacking faults using transmission electron microscopy. The results show that full amorphization at room temperature occurs at a comparable dose to that for its single-crystal SiC counterpart under the identical irradiation conditions. Both materials are amorphized as a result of local damage accumulation. The formation of the nucleation sites for amorphization is not appreciably affected by the presence of stacking faults and grain boundaries. The behavior may be attributed to the significant chemical effects that may completely immobilize the point defects in SiC at room temperature. The results suggest cautions be excised to use nanocrystalline SiC materials in high H irradiation environment at room temperature. Further studies of the H behavior at elevated temperatures are warranted.
Controlled covalent modification of epitaxial single layer graphene on 6H-SiC (0001) with aryliodonium salts using electrochemical methods
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Sensitivity Analysis of a Technique for the Extraction of Interface Trap Density in SiC MOSFETs from Subthreshold Characteristics.
Abstract not provided.
Synergistic effects of iodine and silver ions co-implanted in 6H–SiC
Not Available
Time constant of defect relaxation in ion-irradiated 3 C -SiC
Above room temperature, the buildup of radiation damage in SiC is a dynamic process governed by the mobility and interaction of ballistically generated point defects. Here in this work, we study the dynamics of radiation defects in 3C-SiC bombarded at 100 °C with 500 keV Ar ions, with the total ion dose split into a train of equal pulses. Damage–depth profiles are measured by ion channeling for a series of samples irradiated under identical conditions except for different durations of the passive part of the beam cycle. Results reveal an effective defect relaxation time constant of ~3 ms (for second order kinetics) and a dynamic annealing efficiency of ~40% for defects in both Si and C sublattices. Finally, this demonstrates a crucial role of dynamic annealing at elevated temperatures and provides evidence of the strong coupling of defect accumulation processes in the two sublattices of 3C-SiC.
Uncertainty quantification in elastic constants of SiC f /SiC m tubular composites using global sensitivity analysis
Silicon carbide fiber and silicon carbide matrix (SiC f /SiC m ) tubes produced through the chemical vapor infiltration process have become a candidate cladding material in nuclear applications. The performance of this composite is influenced by many variables such as braiding angle, porosity, material properties, etc., which vary over a range of values due to the inherent fluctuations in the manufacturing process. In this study, the variability in elastic constants of SiC f /SiC m composite has been quantified through multiscale finite element (FE) simulations, variable screening, and high-fidelity surrogate modeling. The key variables dominantly affecting the elastic constants of SiC f /SiC m tubes were identified using global sensitivity analysis. A surrogate to the high-fidelity FE-based model was used in Monte Carlo simulations to generate a hundred thousand samples from which the uncertainty in elastic constants was assessed. It turned out that the coefficient of variation was less than 10%.