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At least 55 records · Page 3

Butterfly, Vinylidene-Like, Monobridged and Trans Structures of Si 2 H 2 + : Comparison to the Well-Characterized Neutral Si 2 H 2

This paper investigates four of the constitutional isomers of Si 2 H 2 + , namely the butterfly, vinylidene-like, monobridged, and trans structures. These isomer geometries were all studied using the CCSD(T) method with basis sets as large as cc-pV5Z. Higher level methods CCSDT and CCSDT(Q) were used for final energetics. It is found that the butterfly isomer has the lowest energy, followed by vinylidene-like and monobridged structures; the trans structure has the highest energy of the four. All structures were compared with their neutral counterparts. Partial charges are computed and it is found that all isomers share the positive charge between the silicon atoms. NBO analysis shows that the cation Si-Si bond order is reduced by 0.5 relative to the neutral versions of the same isomer in the case of the butterfly, vinylidene-like, and monobridged; and reduced by 0.6 for the trans isomer. Vibrational frequencies, infrared intensities, and dipole moments are predicted to encourage the spectroscopic identification of Si 2 H 2 + .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Post-irradiation examination of low burnup U 3 Si 5 and UN-U 3 Si 5 composite fuels

Here this work presents post-irradiation examination data on UN-U 3 Si 5 and U 3 Si 5 fuels at low burnup (i.e., <10–15 GWd/tHM) with Kanthal AF® cladding. The results suggest good irradiation performance for both the silicide and nitride-silicide composite pellets. Optical microscopy revealed that the pellet-cladding gap is still open, and limited axial cracking was observed only in UN-U 3 Si 5 pellets. Microcracking was isolated to the U 3 Si 5 phase in all cases and was observed in pre-irradiation and depleted pellets, indicating that it was not irradiation induced. The fission gas release was minimal for the calculated fission density achieved (2.6 – 3.15 × 10 20 fiss/cm 3 ). No fission gas bubbles were observed in the optical metallography. These results suggest acceptable swelling and fission gas behavior for both the single phase and composite compositions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Ferrimagnetic spin waves in honeycomb and triangular layers of Mn{sub 3}Si{sub 2}Te{sub 6}.

A detailed analysis of the ferrimagnetic ground state of Mn 3 Si 2 Te 6 has been performed using inelastic neutron scattering. Although the proposed valence of the nominal Mn 2+ ions would have quenched orbital angular momentum, a significant exchange anisotropy exists in Mn 3 Si 2 Te 6 . This apparent exchange anisotropy is a manifestation of a weak spin-orbit coupling in the layered material. We employ a detailed simulation of the spin-wave spectrum coupling traditional refinement of dispersion parameters to image analysis techniques, while including Monte Carlo simulations of the instrumental resolution to accurately identify the exchange couplings to the third nearest neighbor. An independent validation of our results is made by comparing our final Hamiltonian to heat capacity measurements.

Sala, G.↗

Measurement of the 25 Al(𝑑,𝑛)⁢ 26 Si reaction and impact on the 25 Al⁢(𝑝,𝛾)⁢ 26 Si reaction rate

The 25 Al(p,γ) 26 Si reaction plays a key role in nucleosynthesis pathways that influence the galactic abundance of 26 Al. A more precise determination of the proton strength of the lowest ℓ = 0 proton resonance in 26 Si is needed to improve reaction-rate calculations. This work measures the 25 Al(d,n) 26 Si proton-transfer reaction in inverse kinematics using a radioactive ion beam at RESOLUT, determining excitation energies and cross sections for the lowest ℓ = 0 resonance associated with the 3 + 3 state at 5.92(2) MeV. Coupled-reaction-channels calculations (FRESCO) are used to extract the ℓ = 0 spectroscopic factor and the corresponding proton width, yielding Γₚ = 2.19(45) eV and a (p,γ) resonance strength of 26(10) meV. This resonance is found to dominate the 25 Al(p,γ) 26 Si reaction rate above 0.2 GK.

20 ≤ A ≤ 38↗

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗

Voltammetric Measurement of Rates and Energetics for Surface Methoxylation of Si(100) in Methanol with Dissolved Electron Acceptors Using Si Ultramicroelectrodes

The steady-state voltammetric responses of n-type Si(100) semiconductor ultramicroelectrodes (SUMEs) immersed in air- and water-free methanolic electrolytes have been measured. The response characteristics of these SUMEs in the absence of illumination were modeled and understood through a framework that describes the distribution of the applied potential across the semiconductor/electrolyte contact using four discrete regions: the semiconductor space charge, surface, Helmholtz, and diffuse layers. The latter region was described by the full Gouy–Chapman model. This framework afforded insight on how relevant parameters such as the semiconductor band edge potentials, the reorganization energies for charge transfer, the standard potential of redox species in solution, the density and energy of surface state populations, and the presence of an insulating (tunneling) layer individually and collectively dictate the observable current–potential responses. With this information, the methoxylation of Si surfaces was evaluated by analysis of the change in voltammetric responses during the course of prolonged immersion in methanol. Here, the electrochemical data were consistent with a surface methoxylation mechanism that depended on the standard potential of redox species dissolved in solution. Estimates of the enthalpies of adsorption as well as the potential-dependent rate constant for surface methoxylation were obtained. Collectively, these measurements supported the contention that the rates of Si surface reactions can be systematically tuned by exposure to dissolved outer-sphere electron acceptors. Moreover, the data represent the quantitative utility of voltammetry with SUMEs for the measurement of semiconductor/liquid contacts.

14 SOLAR ENERGY↗

Cs X Si 15 P 21 ( X = Sn or Pb): Polar Noncentrosymmetric Si–P Frameworks Stabilized by Covalent X –P Bonding

Metal silicon phosphides composed of earth-abundant Si and P tend to exhibit semiconducting properties and adopt diverse crystal structures with relatively small additions of structure-directing elements. The potential of silicon phosphide materials in nonlinear optical applications has been hindered by the inability to systematically produce noncentrosymmetric structures with such a flexible framework. Here, in this work, two isostructural compounds with a novel noncentrosymmetric structure were made possible by the inclusion of elements with stereochemically active lone pairs (Sn 2+ and Pb 2+ ). The structures were determined through single-crystal and synchrotron powder X-ray diffraction. Analysis of chemical bonding in real space through the electron localization function revealed stereochemically active Pb 2+ and Sn 2+ species in a trigonal pyramidal coordination with {Pb/Sn}–P bonds. Such covalent bonding between Pb and P is quite uncommon in extended solids and has been reported in a few rare instances. Band structure calculations and linear optical measurements confirm the semiconducting nature of Cs X Si 15 P 21 ( X = Sn or Pb). The synthesis was optimized to yield high-purity polycrystalline samples. The nonlinear optical properties show promising second-harmonic generation (SHG) coefficients from the Kurtz–Perry method. First-principles calculations of the nonlinear optical properties support the experimentally determined SHG values and provide moderate values of birefringence, suggesting Cs X Si 15 P 21 could be phase-matchable and practical nonlinear optical materials in the mid-IR region.

crystal structure↗

Dynamic re-equilibration controlled multi-step transformations in (Mn, Fe) 2 (P, Si) alloys

In (Mn, Fe) 2 (P, Si) alloys crystallographic first-order phase transformations enable strong coupling of magnetic and entropic properties, potentially leading to high-efficiency energy generation and refrigeration applications. Although hysteresis losses that limit these applications can be reduced through careful control of alloy composition, compositional tuning can also unfavorably influence transformation temperatures and magnetocaloric coupling strength. Hence, exploration of additional processing variables enabling independent control of transformation properties is crucial. In this work, we investigate the role of thermal history as an additional processing variable, exploiting thermally-activated mechanisms to control properties of non-diffusive transformations in (Mn, Fe) 2 (P, Si) alloys. In so doing, we report an unusual transformation-splitting phenomenon following annealing at intermediate times, where a single well-defined magneto-structural transformation evolves towards a multi-step transformation with individual steps occurring at multiple distinct temperatures. Here, on longer annealing at the same temperatures, single-step transformation behavior is recovered. Through additional magnetic and crystallographic characterization, we show that the thermal history-controlled multi-step behavior results from sluggish thermally-activated diffusion. The two-step transformation corresponds to non-equilibrium bimodal composition distributions in the transforming phase, and these develop through a dynamic re-equilibration process as the alloy passes relatively slowly between different thermal equilibria. Together, these results suggest that thermal history primarily controls the transformation properties of (Mn, Fe) 2 (P, Si) alloys indirectly through the composition of one or more transforming phases. Additional investigations are needed to develop thermal history processing for decoupling hysteresis control from other transformation properties.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Development of a Distribution Optimal Power Flow Federate for Open-Source OEDI-SI Platform

Increasing numbers of distributed generators in the electric power distribution networks require developing a control strategy to optimize solutions in real time. Linearized optimal distribution flow development has seen growth and acceptance in the distribution systems literature for efficiently modeling the \glspl{opf} for distribution systems. This paper examines the implementation and integration procedure for linearized optimal distribution flow federate to \gls{oedisi} platform. Specifically, we discuss i) the usage of the \gls{oedisi} platform, ii) obtaining a tractable solution using developed \gls{opf} federate, and iii) validation of solutions and bench-marking the \gls{oedisi} platform with developed \gls{opf} federate using OpenDSS. In brief, we demonstrate how a general linearized optimal distribution flow federate can be developed and integrated with a co-simulation environment to mimic real-world examples. The efficacy of the proposed method is demonstrated using the IEEE 123-bus test system under different scenarios to obtain a tractable solution and compare its results.

Sadnan, Rabayet↗

Nucleation of High-Quality GaP on Si Through V-Groove Si Substrates

III-V growth on nanopatterned v-groove Si is a promising route to low cost Si-based tandem solar cells. Here, we study a high temperature MOVPE nucleation regime for growing GaP on v-groove Si. It is shown that MOVPE growth conditions can be used to control the facet selectivity of the GaP nucleation onto the v-grooves. The most promising nucleation condition was studied further, and it was demonstrated that it can be coalesced into a smooth thin film with promising material quality.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Pressure-Dependent Magnetic Properties of Quasi-2D Cr 2 Si 2 Te 6 and Mn 3 Si 2 Te 6

Recently, pressure has been used to induce structural and magnetic phase transitions in many layered quantum materials whose layers are linked by van der Waals forces. Materials with such weakly held layers allow for relatively easy manipulation of the superexchange mechanism, which can give rise to novel magnetic behavior. Here, using hydrostatic pressure as a disorderless means to manipulate the interlayer coupling, we applied pressure on two quasi-2D sister compounds, namely, Cr 2 Si 2 Te 6 (CST) and Mn 3 Si 2 Te 6 (MST), up to ~1 GPa. Magnetic property measurements with the application of pressure revealed that the ferromagnetic transition temperature decreases in CST, while the opposite occurs for the ferrimagnetic MST. In MST, magnetization decreases with the increase in pressure, and such a trend is not clearly observed within the pressure range studied for CST. The overall pressure effect on magnetic characteristics such as exchange couplings and magnetic anisotropy energies is also examined theoretically using density functional theory. Exchange coupling in MST is strongly frustrated, and the first nearest neighbor interaction is the most dominant of the components with the strongest pressure dependence. In CST, the exchange coupling parameters exhibit very little dependence on pressure. This combined experimental and theoretical work has the potential to expand to other relevant quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fabrication of Poly-Si on Locally Etched SiOx as Passivating Contacts for c-Si Solar Cells

Polysilicon on silicon oxide (poly-Si/SiO x ) passivating contacts with predominant charge-carrier transport via pinholes were prepared with room temperature metal-assisted chemical etching. Pinhole areal densities in the range of 2.8 x 10^4 to 4.5 x 10^7 cm^-2 were imaged by SEM. Contact resistivity of 32 m-ohm-cm^2 and implied open circuit voltage of 729 mV were obtained for symmetric n+ poly-Si/SiOx grown onto randomly textured n-Cz. We also show preliminary data pertaining boron-doped polysilicon on nitride/oxide passivating contacts, with which we achieved implied open circuit voltage above 730 mV and recombination current of 0.2 fA/cm^2.

amorphous Si↗

A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells

The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.

14 SOLAR ENERGY↗

Evolution of the nuclear spin-orbit splitting explored via the 32 Si( d,p ) 33 Si reaction using SOLARIS

The spin-orbit splitting between neutron 1p orbitals at 33 Si has been deduced using the single-neutron-adding (d,p) reaction in inverse kinematics with a beam of 32 Si, a long-lived radioisotope. Reaction products were analyzed by the newly implemented SOLARIS spectrometer at the reaccelerated-beam facility at the National Superconducting Cyclotron Laboratory. The measurements show reasonable agreement with shell-model calculations that incorporate modern cross-shell interactions, but they contradict the prediction of proton density depletion based on relativistic mean-field theory. The evolution of the neutron 1p-shell orbitals is systematically studied using the present and existing data in the isotonic chains of N = 17, 19, and 21. In each case, a smooth decrease in the separation of the 1p 3/2 - 1p 1/2 orbitals is seen as the respective p-orbitals approach zero binding, suggesting that the finite nuclear potential strongly influences the evolution of nuclear structure in this region.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Reaction of Hydrazine with Solution- and Vacuum-Prepared Selectively Terminated Si(100) Surfaces: Pathways to the Formation of Direct Si–N Bonds

Here, the reactivity of liquid hydrazine (N 2 H 4 ) with respect to H-, Cl-, and Br-terminated Si(100) surfaces was investigated to uncover the principles of nitrogen incorporation into the interface. This process has important implications in a wide variety of applications, including semiconductor surface passivation and functionalization, nitride growth, and many others. The use of hydrazine as a precursor allows for reactions that exclude carbon and oxygen, the primary sources of contamination in processing. In this work, the reactivity of N 2 H 4 with H- and Cl-terminated surfaces prepared by traditional solvent-based methods and with a Br-terminated Si(100) prepared in ultrahigh vacuum was compared. The reactions were studied with X-ray photoelectron spectroscopy, atomic force microscopy, and scanning tunneling microscopy, and the observations were supported by computational investigations. The H-terminated surface led to the highest level of nitrogen incorporation; however, the process proceeds with increasing surface roughness, suggesting possible etching or replacement reactions. In the case of Cl-terminated (predominantly dichloride) and Br-terminated (monobromide) surfaces, the amount of nitrogen incorporation on both surfaces after the reaction with hydrazine was very similar despite the differences in preparation, initial structure, and chemical composition. Density functional theory was used to propose the possible surface structures and to analyze surface reactivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗