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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Analytical Identification Method of Generalized Short‐Circuit Ratio Using Phasor Measurement Units

This paper introduces a novel analytical approach for the identification of the admittance matrix and the generalized short-circuit ratio (gSCR) in power systems integrated with renewable energy sources. The proposed method leverages voltage and current measurements from phasor measurement units (PMUs) to construct a least squares objective function, which is then solved using matrix calculus and partial derivatives. Unlike conventional optimization algorithms, this approach provides an analytical solution that substantially reduces data requirements, enabling the efficient and accurate identification of the gSCR with smaller datasets. Additionally, its fixed computational complexity allows for real-time updates as new data are collected, ensuring continuous refinement of the system of equations and enabling rapid, precise gSCR calculations. The method also exhibits strong robustness against measurement noise, making it well-suited for practical applications in dynamic power systems. The combination of reduced data requirements, real-time adaptability, noise robustness and fixed computational load establishes this method as a highly efficient and reliable tool for real-time power system stability analysis. Case studies on an EPRI 36-bus system demonstrate the method's effectiveness, highlighting its accuracy in closely matching true gSCR values, even under diverse disturbances and noisy conditions.

Han, Zelei [Hohai University, Nanjing (China)] (OR↗
NASA NTRS1987

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗
NASA NTRS1980

Short-circuit current improvement in thin cells with a gridded back contact

The use of gridded back contact on thin silicon solar cells 50 micrometers was investigated. An unexpected increase in short circuit current of almost 10 percent was experienced for 2 cm x 2 cm cells. Control cells with the standard continuous contact metallization were fabricated at the same time as the gridded back cells with all processes identical up to the formation of the back contact. The gridded back contact pattern was delineated by evaporation of Ti-Pd over a photo-resist mask applied to the back of the wafer; the Ti-Pd film on the controls was applied in the standard fashion in a continuous layer over the back of the cell. The Ti-Pd contacts were similarly applied to the front of the wafer, and the grid pattern on both sides of the cell was electroplated with 8-10 micrometers of silver.

Giuliano, M.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1995

Device for testing continuity and/or short circuits in a cable

A device for testing current paths is attachable to a conductor. The device automatically checks the current paths of the conductor for continuity of a center conductor, continuity of a shield and a short circuit between the shield and the center conductor. The device includes a pair of connectors and a circuit to provide for testing of the conductive paths of the cable. The pair of connectors electrically connects the conductive paths of a cable to be tested with the circuit paths of the circuit. The circuit paths in the circuit include indicators to simultaneously indicate the results of the testing.

Hayhurst, Arthur R.↗
NASA NTRS2013

A Nanostructured Composites Thermal Switch Controls Internal and External Short Circuit in Lithium Ion Batteries

A document discusses a thin layer of composite material, made from nano scale particles of nickel and Teflon, placed within a battery cell as a layer within the anode and/or the cathode. There it conducts electrons at room temperature, then switches to an insulator at an elevated temperature to prevent thermal runaway caused by internal short circuits. The material layer controls excess currents from metal-to-metal or metal-to-carbon shorts that might result from cell crush or a manufacturing defect

McDonald, Robert C.↗
DOE OSTI2026

Short Circuit Detection and Voltage Sense for High Voltage Ionization Tube Power Supplies

Fermilab's PIP-II upgrade requires new rack-mounted power supplies for Beam Loss Monitor (BLM) ionization tubes compatible with the microTCA 4.1 standard, supporting high-side current measurement for short circuit detection, voltage sense telemetry, and low-side current measurement for beam loss readout. This work presents the design and preliminary schematic of such a supply. A resistive current sensing approach was chosen over inductive, optical, and Hall-effect alternatives for its independence from cable length and component availability. A 500 mΩ inline shunt steps the 2 kV common mode voltage down to roughly 70 V, producing a ~27 μV pulse during a short, which is amplified 500x, compared against a 14-bit DAC threshold, and latched to drive a fault line. Voltage sense steps the 2 kV output down at a 1V/1000V ratio, buffers it with a low bias current amplifier, and digitizes it via a 24-bit ADC over SPI. Onboard power is regulated from 12 V down to isolated 5 V and 3.3 V rails, with capacitive isolation on FPGA communication lines. Lumped parameter models were developed for the ionization tube (0.327 nF, 20 to 200 GΩ dynamic resistance) and the RG-58 coaxial cable to support the design. Component selection is complete and a preliminary schematic has been drawn in Altium Designer, forming the foundation for future prototyping and validation.

Yu, Kellen [Cornell U.]↗
DOE OSTI2025

Improved internal short circuit models for thermal runaway simulations in lithium-ion batteries

Thermal runaway (TR) modeling is one of the primary tools that can be used to overcome challenges associated with lithium-ion battery (LIB) safety. Among all LIB accidents that have occurred over the past decade, Internal Short Circuit (ISC) remains the most common trigger mechanism. Many available models in the literature either use a simplified approach to simulate ISC or completely ignore its contribution. The aim of this study is to understand the nature of the heat released for different types of ISC scenarios, including aluminum-anode, anode–cathode, and copper-cathode ISC. We study ISC behavior using a coupled electrochemical–thermal model with an integrated TR chemical kinetics solver built in the COMSOL Multiphysics framework. The time duration of heat release and the magnitude of the peak ISC current are studied as functions of parameters such as the size of the penetrating filament and the capacity of the cell. The numerical results are used to build an empirical model validated against the published experimental TR propagation data. Our model can be successfully used as a viable low-cost substitute in lower order (lumped) TR simulations to enable TR prevention and mitigation.

Singh, Bakhshish Preet (ORCID:0000000264751992)↗
NASA NTRS1982

The effect of different solar simulators on the measurement of short-circuit current temperature coefficients

Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C. Performance measurements of cells at elevated temperatures are usually made using simulated sunlight and a matched reference cell. Due to the change in bandgap with increasing temperature at portions of the spectrum where considerable simulated irradiance is present, there are significant differences in measured short circuit current at elevated temperatures among different simulators. To illustrate this, both experimental and theoretical data are presented for gallium arsenide cells.

Curtis, H. B.↗
NASA NTRS2012

Solar Cell Short Circuit Current Errors and Uncertainties During High Altitude Calibrations

High altitude balloon based facilities can make solar cell calibration measurements above 99.5% of the atmosphere to use for adjusting laboratory solar simulators. While close to on-orbit illumination, the small attenuation to the spectra may result in under measurements of solar cell parameters. Variations of stratospheric weather, may produce flight-to-flight measurement variations. To support the NSCAP effort, this work quantifies some of the effects on solar cell short circuit current (Isc) measurements on triple junction sub-cells. This work looks at several types of high altitude methods, direct high altitude meas urements near 120 kft, and lower stratospheric Langley plots from aircraft. It also looks at Langley extrapolation from altitudes above most of the ozone, for potential small balloon payloads. A convolution of the sub-cell spectral response with the standard solar spectrum modified by several absorption processes is used to determine the relative change from AMO, lscllsc(AMO). Rayleigh scattering, molecular scatterin g from uniformly mixed gases, Ozone, and water vapor, are included in this analysis. A range of atmosph eric pressures are examined, from 0. 05 to 0.25 Atm to cover the range of atmospheric altitudes where solar cell calibrations a reperformed. Generally these errors and uncertainties are less than 0.2%

Snyder, David D.↗
DOE OSTI2025

Pressure-Tolerant 3D Anodes Enable Short-Circuit Prevention and Low Heat Generation in Argyrodite Solid-State Batteries

Solid-state batteries (SSBs) offer a safer, higher-energy-density alternative to lithium-ion batteries, yet commercialization is hindered by incompatibility with lithium metal. Here, to overcome these challenges, we developed a cost-effective, commercially available prelithiated micro carbon fiber framework (Li-Cf) anode featuring a high-pressure-tolerance, for use with argyrodite solid-state electrolytes (SSEs). This 3D structure accommodates uniform lithium deposition, simplifies cell assembly under elevated pressure, inhibits dendrite growth toward SSEs, reduces heat generation, and enhances overall compatibility. Notably, our architecture enables the cell to tolerate pressures up to 400 MPa without short-circuiting during assembly. Meanwhile, the 3D framework serves as a preferential pathway for lithium deposition, thereby reducing lithium growth toward the SSEs and mitigating the risk of dendrite formation in SSEs. Operando calorimetry and distribution of relaxation times analysis reveal that lithium morphology degradation at the interface with the SSEs is a key failure mechanism in lithium metal argyrodite SSBs, leading to increased diffusion resistance and heat generation. In contrast, the Li-Cf anode mitigates these issues by reducing both heat flux and charge transfer resistance. Full cells with LiNi 0.8 Co 0.1 Mn 0.1 O 2 /Li 6 PS 5 Cl/Li-Cf retain ~79% capacity after 600 cycles, demonstrating significantly improved cycling stability and strong potential for practical energy storage applications.

25 ENERGY STORAGE↗
DOE OSTI2026

A Parametric Reduced-Order Model for Inverter Short-Circuit Response in Protection Studies

This paper presents a reduced-order model (ROM) for grid-following (GFL) inverters that reproduces inverter fault current trajectories, including sub transients, transient, and steady-state phases, across a range of fault types, locations, and pre-fault operating points. . The proposed model is developed by: Constructing the positive- and negative-sequence current with parameterization fitted by large data training and fitting Validating using EMT simulation against EMT full model and demonstrating the ROM's capability to capture fault current magnitude, phase angle, and oscillatory transients. Building a standard EMT simulation platform library component for easy configuration and application.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRSDate not supplied

Short Circuiting the Controller –Missteps in Maintenance and Inspection of Process and Wiring in STS-93

During the launch of the Chandra X-Ray Observatory in 1999, an in-flight anomaly occurred a few seconds after liftoff. A power fluctuation caused two Main Engine controllers to drop offline. Fortunately, due to redundancy, the Space Shuttle Columbia was able to successfully reach orbit and avoid an abort. After the successful deployment of Chandra and the safe return of the crew, in-vestigation revealed that the controller failure was due to a wire short in the pay-load bay. It was suspected that the Kapton insulation on the wire rubbed off against a burred screw head, the result of overtightening of the screw during a maintenance event 4 to 5 years prior to the STS-93 mission. Vibrations led the abraded wire to short during flight. The Space Shuttle Program was grounded for 4 months while a program-wide inspection and wire chafing mitigation effort of all orbiter wiring ensued.

Kristy S Yun↗