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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Nonlinear adhesive behavior effects in a cracked orthotropic sheet stiffened by a semi-infinite orthotropic sheet

The stress-intensity factors are determined for a cracked orthotropic sheet adhesively bonded to an orthotropic stringer where the adhesive layer is modeled with a nonlinear stress-strain curve. By the use of Green's functions and the complex variable theory of orthotropic elasticity, a set of integral equations is obtained. The integral equations are replaced by an equivalent set of algebraic equations, which are solved to obtain the shear stress distribution in the adhesive layer, with which the crack-tip stress-intensity factors are found. When the adhesive was modeled with a nonlinear stress-strain curve, the peak shear stresses in the adhesive were considerably reduced in comparison to the solution for the linear elastic adhesive. This resulted in increases in the stress-intensity factors for the nonlinear adhesive solution compared to the linear adhesive solution. The nonlinear adhesive has no significant effect on the stress-intensity factor unless the near crack tip is beneath the stringer. It is assumed that the adhesive bond remains intact and it is predicted that onset of adhesive failure occurs at decreasing levels of applied stress as the crack propagates beneath the stringer.

Bigelow, C. A.↗
NASA NTRS1955

An Analysis of the Stability and Ultimate Compressive Strength of Short Sheet-Stringer Panels with Special Reference to the Influence of Riveted Connection Between Sheet and Stringer

A method of strength analysis of short sheet-stringer panels subjected to compression is presented which takes into account the effect that the riveted attachments between the plate and the stiffeners have on the strength of the panels. An analysis of experimental data shows that panel strength is highly influenced by rivet pitch, diameter, and location and that the degree of influence for a given riveting depends on the panel configuration and panel material. (author)

Semonian, Joseph W↗
NASA NTRS1955

An Analysis of the Stability and Ultimate Compressive Strength of Short Sheet-stringer Panels with Special Reference to the Influence of the Riveted Connection Between Sheet and Stringer

A method of strength analysis of short sheet-stringer panels subjected to compression is presented which takes into account the effect that the riveted attachments between the plate and the stiffeners have on the strength of panels. An analysis of experimental data shows that panel strength is highly influenced by rivet pitch, diameter, and location and that the degree of influence for a given riveting depends on the panel configuration and panel material.

Semonian, Joseph W↗
NASA NTRS1931

Flat sheet metal girders with very thin metal web. Part III : sheet metal girders with spars resistant to bending - the stress in uprights - diagonal tension fields

This report continues the work presented in NACA-TM 605 and expands the scope to include the change in specific number of wrinkles from direction x to z, so that b and f become variable in direction z. Moreover, it seems likely that b and f increase from the edge toward the center if the sheet is infinitely thin.

Wagner, Herbert↗
NASA NTRS1994

Geotail observations of spiky electric fields and low-frequency waves in the plasma sheet and plasma sheet boundary

Electric field data from the Geotail spacecraft provide an opportunity to extend the observations of spiky fields made by International Sun Earth Explorer-1 (ISEE-1) to a region of the magnetosphere where quasistatic electric field measurements have not previously been msde, to examine their possible importance in the dynamics of the middle and distant tail, and to test some hypotheses about their formation. In this paper, examples of large fields in the plasma sheet and its boundary at radial distances up to approximately 90 R(sub E) are presented. It is shown that three different types of large electric fields can occur: (1) spiky fields; (2) 'DC' fields; and (3) waves at frequencies comparable to the lower hybrid frequency. There is usually a gradation between (1) and (3), and often large electric field spikes are embedded in regions of lower amplitude waves. The waves tend to occur in short (few to 10's of seconds) packets whose start and stop times are not always correlated with changes in the magnetic field and/or density (as indicated by the spacecraft potential). The peak frequency is often less than but comparable to the lower hybrid frequency in agreement with theories of lower hybrid drift waves in the magnetotail. The largest spikes are not always associated with the largest changes in the spacecraft potential and/or magnetic field. It is suggested that the spiky fields may represent the nonlinear development of the waves.

Cattell, C.↗
NASA NTRS2019

Assessment of ICESat-2 Ice Sheet Surface Heights, Based on Comparisons over the Interior of the Antarctic Ice Sheet

We collected kinematic Global Navigation Satellite Systems (GNSS) surface height data, on a 750‐km ground‐based traverse of the flat interior of the Antarctic ice sheet, for comparison with Ice, Cloud, and Land Elevation Satellite‐2 (ICESat‐2) surface heights. Vertical errors in the GNSS data are estimated to be 5.6 cm, comparable to results from a previous traverse and with year‐to‐year comparisons. Comparisons of the GNSS heights and 6 months of ICESat‐2 ATL03 photon‐based heights and ATL06 segment‐based heights indicate that the accuracy and precision of ICESat‐2 data are comparable to that of results from the ICESat mission: ATL03 is currently accurate to better than 5 cm with better than 13 cm of surface measurement precision, while ATL06 is currently accurate to better than 3 cm with better than 9 cm of surface measurement precision.

Brunt, K. M.↗
NASA NTRS1976

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

To date, an experimental dip-coating facility was constructed. Using this facility, relatively thin (1 mm) mullite and alumina substrates were successfully dip-coated with 2.5 - 3.0 ohm-cm, p-type silicon with areas of approximately 20 sq cm. The thickness and grain size of these coatings are influenced by the temperature of the melt and the rate at which the substrate is pulled from the melt. One mullite substrate had dendrite-like crystallites of the order of 1 mm wide and 1 to 2 cm long. Their axes were aligned along the direction of pulling. A large variety of substrate materials were purchased or developed enabling the program to commence a substrate definition evaluation. Due to the insulating nature of the substrate, the bottom layer of the p-n junction may have to be made via the top surface. The feasibility of accomplishing this was demonstrated using single crystal wafers.

Heaps, J. D.↗
NASA NTRS1976

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The objective of this research is to fully investigate the Ribbon-To-Ribbon (R-T-R) approach to silicon ribbon growth. Initial work has concentrated on modification and characterization of an existing R-T-R apparatus. In addition, equipment for auxiliary heating of the melt is being evaluated and acquired. Modification of the remote viewing system and mechanical staging are nearly complete. Characterization of the laser and other components is in progress and several auxiliary heating techniques are being investigated.

Gurtler, R. W.↗
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth was investigated. An existing RTR apparatus, RTR#1, was upgraded to allow for 5 cm wide ribbon growth with a finite stroke length of at least 15 cm. A second RTR apparatus, RTR#2, was designed, built, and operated which utilizes continuous feed mechanisms and allows continuous growth of 7.5 cm wide ribbons. RTR#2 includes development and utilization of advanced beam scanning (or shaping), high power lasers, and thermal profile modification elements to attain maximum growth velocities (with a design goal of 18 cm/min). Materials studies, process development, and thermal analyses are also described. Residual stresses and dislocation densities were minimized through theoretical and experimental efforts towards optimization of thermal profiles. Growth runs were performed on RTR#2 and solar cells were fabricated which demonstrated efficiencies greater than 10%.

Gurtler, R. W.↗
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon, RTR, process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A ribbon-to-ribbon process was used for routine growth of samples for analysis and fabrication into solar cells. One lot of solar cells was completely evaluated: ribbon solar cell efficiencies averaged 9.23% with a highest efficiency of 11.7%. Spherical reflectors have demonstrated significant improvements in laser silicon coupling efficiencies. Material analyses were performed including silicon photovoltage and open circuit photovoltage diffusion length measurements, crystal morphology studies, modulus of rupture measurements, and annealing/gettering studies. An initial economic analysis was performed indicating that ribbon-to-ribbon add-on costs of $.10/watt might be expected in the early 1980's.

Gurtler, R. W.↗
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.

Gurtler, R. W.↗
NASA NTRS1978

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Wolfson, R. G.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗