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A new monolithic, diffraction coupled phase-locked semiconductor laser array has been fabricated. Stable narrow far-field patterns (approximately 3 deg) and peak power levels of 1 W have been obtained for 100-micron-wide devices with threshold currents as low as 250 mA. Such devices may be useful in applications where high power levels and stable radiation patterns are needed.
The novel optoelectronic devices discussed, phase-locked semiconductor laser arrays with separate contacts can perform a variety of near field and far field pattern tailoring functions and control mutual coherence among array elements, as well as lasing wavelength selectivity and tunability. Attention is presently given to experimental results from such arrays, which indicate that the threshold currents of the 4-micron wide lasers employed are typically 60 mA. The separate contacts to each one of them are provided by means of two-level metallization.
Despite their intrinsic power limitations, semiconductor laser diodes are essential for laser-based spaceborne sensor systems covering a wide spectral range, fulfilling such roles as pumping and injection-locking. They may also be used as direct sources in shorter-range operations. AlGaAs laser arrays have been developed for 810-nm band pumping in Nd:YAG lasers otherwise emitting at 1.064 nm. Additional roles include their use as low-power injection seeds, locking a solid-state laser into a specific desired wavelength.
Paper reviews methods of increasing and combining outputs of semiconductor lasers, with references to literature of recent years (mostly 1986 and 1987). This is a field of great practical importance: Necessary to increase or combine outputs of individual lasers to obtain sufficient power for such uses as communication, ranging, remote sensing, printing, and pumping solid-state lasers.
Narrow linewidth (<100KHz) semiconductor lasers are expected to be a key technology in NASA's stellar interferometry missions to search for planets around nearby stars. Long coherence length lasers are needed for precise (20 pm to 5 mn) measurements of the optical path difference. This work discusses results using the self-heterodyne delay technique to measure 1.3 micrometer InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser 1/f and current supply noise.
This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.
The divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic (multilayer) waveguide are numerically simulated. The reasons for the choice of the given heterostructure design are explained, and the consequences of choosing other layer structures are considered. It is shown how to choose the active waveguide thickness, the active region position on the waveguide, and the multilayer waveguide grating period. (lasers)
A new monolithic phase-locked semiconductor laser array has been fabricated. Employing two-level metallization, each of the eight elements in the array has a separate contact, thus making it possible to compensate for device nonuniformities and control the near-field and far-field patterns. Threshold currents are approximately 60 mA for each 5-micron-wide laser in the array. Phase locking has been observed via the narrowing of the far-field pattern. Experimental results are compared to those obtained from the same arrays operated with all the lasers connected in parallel.
The spectrum of semiconductor-laser arrays with separate contacts is investigated. It is demonstrated that the individual laser currents can be selected such that the array operates in a single longitudinal mode, in contrast to the multimode nature of its individual constituents. Moreover, it is possible to tune the lasing frequency by varying the laser currents. Wavelength tuning range of about 50 A, with tuning rate of about 5 A per milliampere, is demonstrated. It is suggested that these spectral features, characteristic of lasers which are coupled in parallel, result from the strong frequency dependence of their spatial mode pattern near the phase-matching frequency of their coupled waveguides.
Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.
Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2.
Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0 – 4.4 W (pump current 14 A) in a continuous-wave regime and 15 – 17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450 – 1500 nm. (paper)
The photon-number fluctuation of the external field from a semiconductor laser - which was reduced to below the standard quantum limit - is shown to be correlated with the measured junction-voltage noise. The spectral density of the sum of the photon-number fluctuation and junction-voltage fluctuation falls below the squeezed photon-number fluctuation. This confirms the theoretical predictions that this correlation, which originates in the dipole interaction between the internal field and electron-hole pairs, extends into the quantum regime.
Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.
Rate equations analysis of phase-locked semiconductor laser arrays has been carried out. It was found that for given (laser) current densities, the photon density distribution in the array elements is that particular one which maximizes the total photon density. The results of this analysis were then combined with the waveguide properties of the laser array waveguide, yielding a basic model of phase-locked diode laser arrays. This model explains the effects of the variation of the current combination through the array elements on its mode structure that were observed recently.
The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.
Electron-hole plasma heating and ultrafast modulation in a semiconductor laser under a terahertz electrical field are investigated using a set of hydrodynamic equations derived from the semiconductor Bloch equations. The self-consistent treatment of lasing and heating processes leads to the prediction of a strong saturation and degradation of modulation depth even at moderate terahertz field intensity. This saturation places a severe limit to bandwidth achievable with such scheme in ultrafast modulation. Strategies for increasing modulation depth are discussed.
The operational principles and a possible device configuration of one dimensional monolithically integrated semiconductor laser arrays are described. The output beam of the array can be electronically steered. Devices of the type can find applications in optical communication systems where the power levels needed are above the capability of a single laser device.