Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Semiconductor Reliability Testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

52 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Universal control of a six-qubit quantum processor in silicon

Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here, we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits, and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will enable testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Covalently-Bonded Laminar Assembly of Van der Waals Semiconductors with Polymers: Toward High-Performance Flexible Devices

Van der Waals semiconductors (vdWS) offer superior mechanical and electrical properties and are promising for flexible microelectronics when combined with polymer substrates. However, the self-passivated vdWS surfaces and their weak adhesion to polymers tend to cause interfacial sliding and wrinkling, and thus, are still challenging the reliability of vdWS-based flexible devices. Here, in this study, an effective covalent vdWS–polymer lamination method with high stretch tolerance and excellent electronic performance is reported. Using molybdenum disulfide (MoS 2 ) and polydimethylsiloxane (PDMS) as a case study, gold–chalcogen bonding and mercapto silane bridges are leveraged. The resulting composite structures exhibit more uniform and stronger interfacial adhesion. This enhanced coupling also enables the observation of a theoretically predicted tension-induced band structure transition in MoS 2 . Moreover, no obvious degradation in the devices’ structural and electrical properties is identified after numerous mechanical cycle tests. This high-quality lamination enhances the reliability of vdWS-based flexible microelectronics, accelerating their practical applications in biomedical research and consumer electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tunable Solid‐State Properties and Anisotropic Charge Mobility in Hydrogen‐Bonded Diketopyrrolopyrrole Polymers via Automated Device Fabrication and Characterization

The optoelectronic properties of semiconducting polymers and device performance rely on a delicate interplay of design and processing conditions. However, screening and optimizing the relationships between these parameters for reliably fabricating organic electronics can be an arduous task requiring significant time and resources. To overcome this challenge, Polybot is developed—a robotic platform within a self‐driving lab that can efficiently produce organic field‐effect transistors (OFETs) from various semiconducting polymers via high‐throughput blade coating deposition. Polybot not only handles the fabrication process but also can conduct characterization tests on the devices and autonomously analyze the data gathered, thus facilitating the rapid acquisition of data on a large scale. This work leverages the capabilities of this platform to investigate the fabrication of OFETs using hydrogen bonding‐containing semiconducting polymers. Through high‐throughput fabrication and characterization, various data trends are analyzed, and large extents of anisotropic charge mobility are observed in devices. The materials are thoroughly characterized to understand the role of processing conditions in solid state and electronic properties of these organic semiconductors. The findings demonstrate the effectiveness of automated fabrication and characterization platforms in uncovering novel structure–property relationships, facilitating refinement of rational chemical design, and processing conditions, ultimately leading to new semiconducting materials.

automated fabrication and characterization↗
DOE OSTI2022

Considerations of Radiation-Hardened Electronics for Alpha Detectors in Molten Salt Reactors

Along with advanced generations of reactors quickly becoming reality, the need for instrumentation to provide reliable information for their safety and operation is also becoming relevant. Instrumentation-wise, molten salt reactors (MSRs) represent an especially challenging case in which detectors must survive extreme temperatures, high amounts of radiation, and a highly corrosive coolant. Adding to the complexity, tight material control and accounting must be maintained with any special nuclear material (SNM), a practice made more difficult by the nature of a loop of flowing fuel. Alpha spectroscopy offers a unique window into investigating the isotopic concentrations of actinides within just such a molten salt environment. The characteristic α emissions of specific actinide isotopes in the salt enable quantification of their concentrations. Semiconductor devices based on wide bandgap materials such as silicon carbide and gallium oxide can withstand the extreme temperatures within MSRs and offer good chemical stability with the corrosive salt. Collaborators at The Ohio State University are fabricating and testing a β gallium oxide α particle sensor that could identify actinide concentrations within the fuel salt to help improve the material control and accounting required for complicated system inherent to MSRs.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Packaging of an 8-kV Silicon Carbide Diode Module with Double-Side Cooling and Sintered-Silver Joints

Packaging innovations are needed for medium-voltage wide bandgap power semiconductor modules to enable their adaptation in grid applications. A unique challenge for packaging medium-voltage power modules is managing the trade-off between insulation demand and heat dissipation. The focus of this work was on developing a packaging innovation that improves the module heat dissipation and offers more flexibility to its insulation design. Two strategies were explored for the packaging of an 8-kV SiC diode rectifier module:(1) double-side cooling and (2) sintered-silver bonding. Double-side cooling was realized by using short metal posts rather than long and thin wire bonds for device interconnection, forming a low-profile package with devices sandwiched between two insulated metal substrates. Sintered-silver bonding enabled the devices to function reliably at over 250 °C. Simulations of the packaged module showed a low interconnect inductance of 2.67 nH and a 50% less heat transfer coefficient required to cool the chips. Prototypes of the module were fabricated, and preliminary electrical testing results validated the package design.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2026

Photoelectrode Durability in Two- versus Three-Electrode Configurations: Understanding the Impact of Circuit Configuration on Water-Splitting Stability

Device durability remains a significant challenge in photoelectrochemical (PEC) water splitting under ambient conditions. Yet, a lack of understanding of the test configuration and applied bias effects continue to hinder progress. In this study, we differentiate two-electrode (2E) and three-electrode (3E) configurations for evaluating PEC material durability, focusing particularly on their impacts on photoabsorber solid-state operating conditions. Our results underscore the fallacy of inferring 2E device stability from durability measurements performed solely in 3E configurations. Unmeasured and often misunderstood total circuit bias in 3E tests moderates material degradation, leading to the overestimation of photoelectrode stability compared to short-circuit operation. We demonstrate how the photoabsorber's operating voltage critically governs charge separation, surface stability, and degradation mechanisms during PEC operation. With these findings, we propose a standardized framework for conducting more reliable 3E durability experiments that simulate unassisted performance to help accelerate the development of robust, stable materials for solar-driven water splitting.

08 HYDROGEN↗
DOE OSTI2019

Preparing for the Next Generation of EUV Lithography at the Center for X-ray Optics

The introduction of EUV lithography into high-volume semiconductor manufacturing this year represents a monumental milestone for EUV technology. After nearly 30 years of development, the EUV research community has overcome many of the key obstacles required to enable the long-awaited integration of EUV lithography into the lab. These obstacles have included: the development of a stable, high-powered EUV source to ensure adequate exposure tool reliability; controlling EUV mask defects and mask contamination; and the development of EUV resists with adequate sensitivity, resolution, and line width roughness to meet the tolerances required for high-volume manufacturing. As EUV moves into its second generation, there will be new challenges facing the community as it works to push EUV technology into the future. Smaller feature sizes will be achieved using higher numerical aperture optics, which are planned to have an anamorphic geometry (asymmetric magnification and numerical aperture between horizontal and vertical axes) to overcome 3D effects at the mask. This new geometry and its larger angle ranges make understanding mask absorber and multilayer effects all the more important. New methods for high-NA wavefront metrology need to be tested to ensure that these optical systems can be aligned to operate with minimal aberrations. Mask defects need to continue to be studied, and the inclusion of EUV pellicles in the roadmap requires that mask inspection and review systems adapt accordingly. Finally, new resists must be developed to support the increased resolution of feature sizes below 8 nm half pitch. The Center for X-ray Optics (CXRO) at Berkeley Lab has been a leader in EUV research for the past 25 years. Leveraging 13.5 nm EUV light from the Advanced Light Source synchrotron facility, CXRO is home to several EUV and soft X-ray (SXR) research tools that have provided important insights into EUV resists, masks, and coatings. The 0.3 NA Microfield exposure tool (MET) and Dose Calibration Tool (DCT) have played an instrumental role in the development of the current generation of high-resolution EUV resists. The Actinic Inspection Tool (AIT) and its successor, SHARP, have enabled aerial image analysis, providing key insights into mask defects, 3D mask effects, illumination, and aberrations. And the CXRO Reflectometer continues to be the industry standard in multilayer coating and EUV mask scattering metrology. To address the new challenges facing the next generation of EUV lithography, CXRO has upgraded its suite of EUV research tools. The 0.5 NA MET5 is a newly commissioned projection lithography tool that is capable of printing feature sizes down to 8 nm half pitch. A new radiation chemistry program is deploying several techniques aimed at dissecting the role of primary photoelectrons and secondary electrons in EUV resists. The SHARP microscope has been outfitted with anamorphic zone plate lenses that can emulate the geometry of next-generation EUV scanners, and the reflectometer has been applied to new scattering experiments for the purpose of understanding the 3D effects of EUV mask multilayers, as well as determining mask properties using scattering profiles. In parallel with these tools, the CXRO High-NA Wavefront Sensing Program is developing high-resolution wavefront sensors suitable for measuring aberrations at high NA. This article presents an overview of these programs and describes how they will address the primary challenges that face the EUV community as it moves to the next generation of EUV lithography.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

An Advanced Extreme-Environment Wireless Telemetry System for Turbine Blade Instrumentation

As advanced natural gas power generation systems evolve, the thrust for increased efficiencies and reduced emissions results in increasingly harsh conditions inside the turbine environment. These high temperatures, pressures, and corrosive atmospheres result in accelerated rates of degradation, leading to failure of turbine materials and components. Wolfspeed, A Cree Company, Siemens Energy, and Siemens Corporate Technology, in collaboration with the Department of Energy (DOE)'s National Energy Technology Laboratory, are developing a reliable and long-term monitoring capability in the turbine hot gas path in the form of novel ceramic-based thermocouples and wide bandgap instrumentation electronics that will contribute to the overall reliability of gas turbines. When equipped with better monitoring and controls, power plants can operate with increased fuel-burning efficiency, improved process dynamics and gas concentrations, and increased overall longevity of the power plant components. This will result in increased turbine availability and a reduction in outages and maintenance costs. The technology being developed in this program is based on advanced techniques and innovations in nearly every aspect of high-temperature electronics, including materials, semiconductor devices, subcomponents, electronic packaging, and system integration. The environment in which this wireless system must operate has continuous centrifugal loads with a gravitation force on the order of 16,000 times the force of gravity (16,000 g) and temperatures exceeding 400°C. This article will specifically discuss the background and motivation for the high-temperature instrumentation system and will explain the high-level electrical system, the construction of the instrumentation package, the techniques used for integration onto rotating components, as well as the wireless power and data transmission systems. In addition to the electrical and mechanical design, this article will also discuss results from laboratory bench testing as well as heated spin rig testing. Lastly, this article will highlight the future direction of the instrumentation system evolution, with a final objective of insertion into Siemens natural gas turbine power plants.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network

This paper presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated widebandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode (CM) or differential mode (DM)). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility (EMC). However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This paper addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50Ω/50μH LISN with 1.5kV, 75A and 30MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300kVA MV EMI testbed.

42 ENGINEERING↗
DOE OSTI2024

Optimization of Structurally Enhanced Solder Transient Liquid Phase Bonding

High temperature packaging technologies are a necessity for high temperature capable devices. SAC305 solder has an operational limit of 174°C imposed by creep effects which aligns well with current junction temperature limits of 175°C. Wide band gap semiconductor materials have the potential to reach junction temperatures of up to 800°C that are not currently attainable with significant reliability. Capitalizing on this potential will requires substrates and attachments that can operate well beyond the current 175°C standard. Silver sintering pastes have received widespread interest as a high temperature attachment alternative. However, the process requires high pressure bonding in an inert environment to achieve acceptable bond quality. Transient liquid phase (TLP) sintering is capable of good bond quality without pressure requirements but suffers from low thermal conductivity and only slightly reduced cost compared to silver sintering. SAC305 solder contains the same constituent materials for TLP as available copper-tin TLP sintering paste. By introducing engineered surface structures into the bond, intermetallic formation can be accelerated producing a bond similar to TLP sintering but in an ambient environment and for reduced cost. While this process has been demonstrated, it has not yet been optimized. Currently bonds are formed using a 75 μm stencil on substrate surface structures 24 μm tall, covering 19% of the bonding area. The process takes about 4 hours not including the formation of surface structures. Here, this study will center on the effects of stencil thickness and coating methods. Samples will be analyzed by scanning acoustic microscopy, die shear testing and cross sectional scanning acoustic microscopy.

42 ENGINEERING↗
DOE OSTI2022

Toward Robust Autotuning of Noisy Quantum dot Devices

The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a “gatekeeper” system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9)% when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Machine Learning-Driven Reliability Estimation of PV Inverters Considering Alert-Ambient Variability

Weather-induced spatio-temporal degradation limits outdoor PV inverter lifetime and reliability, necessitating advanced data analysis. This study employs a top-down, data-driven approach utilizing multiple machine learning (ML) algorithms to estimate inverter reliability in a 1.4 MW PV power plant, considering factors such as irradiance, humidity, temperature, time of day, and weather conditions. An extensive alert dataset from 17 identical inverters, including alert types, propagation, and frequency, reveals significant correlations with environmental factors and inverter output power, enabling the construction of a performance reliability model. Dual-stage supervised-ML models are evaluated for accuracy, with the ‘classification-regression’ model by an artificial neural network (ANN) tested on the averaged “Alert-Ambient” dataset, which is outperformed by ‘clustering-regression’ models using random forest (RF) and K-Nearest Neighbors (KNN) on individual inverter datasets. K-means clustering applies principal component analysis to reduce dimensions, achieving improved accuracy beyond the 80% achieved by ANN on the averaged dataset. Second-stage regression estimates inverter reliability with a mean square error of 0.0195 on the averaged dataset and as low as 0.002 on individual inverter datasets using RF. Furthermore, these findings highlight the method's suitability for estimating PV inverter output reliability under ambient conditions, essential for digital twin development and related applications.

14 SOLAR ENERGY↗
DOE OSTI2025

Spatial Mapping of Chiral-Induced Spin Selectivity in Chiral Perovskite via Spin-Schottky Junction

Chiral halide perovskite (c-HP) semiconductors exhibit on average a large chiral-induced spin selectivity (CISS) effect. Nevertheless, the microscopic details of CISS and its integration in opto-spintronic constructs remain nascent. Reliable reporting of CISS performance characteristics represents a significant challenge in providing the necessary design rules. We show a Kelvin probe force microscopy (KPFM) method that can quantitatively evaluate and spatially map the chirality-dependent surface contact potential difference resulting from the formation of a spin-Schottky junction. We revealed inhomogeneity in the CISS response, where low-CISS regions in the c-HP films reduce the overall macroscopic average, likely serving as a key factor in optimizing macroscopic performance. We also observed that although c-HP films made from higher precursor concentrations lead to thicker films and higher carrier concentrations with subsequent larger barrier heights in the Schottky junction, stronger spin relaxation due to non-ideal film quality reduces spin polarization.

14 SOLAR ENERGY↗
DOE OSTI2021

Calibration and field deployment of low-cost sensor network to monitor underground pipeline leakage

Recent technological advances in methane detection have improved leak detection and repair. However, current methods to reliably measure methane concentrations rely on expensive instruments or demand significant labor input. There is interest in using affordable methane sensors that are responsive to ppmv level changes in methane concentrations in both urban and rural environments for monitoring underground natural gas pipeline leaks. This is especially relevant for situations where potentially significant leaks cannot be repaired immediately or smaller leaks that require long-term monitoring and further evaluation. In this work, a low-cost sensor unit, equipped with a metal oxide sensor, was designed, built, and calibrated over a wide range of methane concentrations and environmental conditions in preparation for field application. A network of these sensors was then installed at the test site and used to measure methane concentrations at ground level above known sub-surface natural gas emissions which emulated underground gas pipeline leaks. This low-cost sensor network measured over 4 days total for the two different known leakage rates. Results demonstrate that the sensors can continuously measure relative methane variability for extended periods but require calibration for a wide range of temperature and humidity conditions to properly determine absolute gas (i.e., methane) concentrations. Furthermore, when a regression analysis was conducted to evaluate the effects of meteorological parameters on methane concentration, air temperature and wind speed have strong impacts on the concentration. Overall, the network approach allows improved identification of leak location and monitoring of underground natural gas leaks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Thermally Conductive Backsheets (TCB) for Reduced Operating Temperatures

The performance of photovoltaic (PV) modules is primarily influenced by the plane of array (POA) irradiance and their operating temperature. The lower the module operating temperature, the higher is its performance. Increasing a module’s operating temperature reduces its power output due to an increase in the semiconductor’s intrinsic carrier density, leading to a reduction in the open-circuit voltage and, subsequently, reducing the maximum power point voltage. Reducing the operating temperature lowers the levelized cost of energy (LCOE) via increased energy production (i.e., more kilowatt hour over the life of the asset) and increased service lifetime (years in the field). The module operating temperature is dictated by the weather parameters and the thermal properties of module construction materials. The primary weather parameters influencing the PV module temperature are: the ambient temperature (directly related), irradiance (directly related), and wind speed (inversely related). The primary thermal properties of module construction materials influencing the PV module temperature are: the optical transmissivity and thermal conductivity of superstrate, the thermal conductivity of substrate, the thermal conductivity of encapsulant and the efficiency of the encapsulated solar cells. The primary goal of this study is to reduce the operating temperature of PV modules using thermally conductive backsheet (TCB) substrates developed by the industry. The temperature of PV modules installed in a large multi-MW plant can also be influenced by their physical locations in the plants due to the influence of wind direction. A thermal mapping of PV plants has also been investigated and presented in this study. The most commonly used PV backsheet material has been polyvinyl fluoride (DuPont trade name “Tedlar”)-based backsheet, which typically has three layers: Tedlar–polyethylene terephthalate (PET)–Tedlar (TPT). The primary goal of this project is to reduce the module operating temperature below the benchmark TPT backsheet temperature using newly developed TCBs by the industry. The overall approach of this project involves six focus areas: i) select and procure one TPT and thirteen promising TCBs available in the industry; ii) construct a large number of 1-cell and 9-cell modules using benchmark TPT and selected TCBs [all other construction materials are fixed and they are: glass superstrate, EVA encapsulant, mono-Si cell and junction box]; iii) to identify best performing TCBs, monitor the long-term field operating temperatures of the constructed modules which are installed in three climatic conditions (hot-low wind [Mesa, AZ], hot-high wind [Maricopa County, AZ] and temperate [Cumberland County, NC]; iv) to identify the most durable TCB, perform extended accelerated reliability testing of modules constructed with best three TCBs and benchmark TPT; v) to predict module temperature, develop physical and empirical thermal models with and without thermal properties of all construction materials in the modules, respectively; and vi) to determine the influence of wind speed and direction on the module operating temperature in a plant, and perform thermal mapping of PV modules in two large PV plants [Maricopa County, AZ and Cumberland County, NC]. The key achievements of this project are listed below: Backsheet selection: 14 backsheets were procured after an extensive literature and industry search. Finally, based on the thermal and other selection criteria, 1 TPT and 4 thermally conductive backsheets were selected for this project. Fabrication of mini modules: 50 one-cell modules were fabricated in year 1 for thermal performance evaluation. The module design was changed to nine-cell module at start of year 2 to mimic commercial design. 20 nine-cell modules were fabricated in year 2 for thermal performance evaluation. 28 four-cell modules were fabricated in year 3 for accelerated stress-testing. Thermal conductivity of backsheets: Year 1 TCBs showed at least 8% higher thermal conductivities than TPT. Year 2 and 3 TCBs showed at least 20% higher thermal conductivities than TPT. Installation of mini PV modules at three sites: 6 one-cell modules and 8 nine-cell modules were installed at AZ-1 site [Mesa, AZ]. 12 one-cell modules and 6 nine-cell modules were installed at each of two powerplants (AZ-2 [Maricopa County, AZ] and NC sites). Nominal operating cell temperatures (NOCT) of mini PV modules: NOCT of TCBs were observed to be lower than TPT with differences as high as 2°C. Comparison of thermal performance: The median operating temperature of one-cell modules was found to be reduced by 2°C by using TCB_A modules compared to TPT modules on several days in a month for few months in a year. The median temperature improvement of 4oC was achieved at several instances on a few days, but not all days, in a year using multiple TCBs compared to TPT. The final project milestone of achieving median temperature improvement of 5oC was achieved at several instances on a few days, but not all days, in a year using TCB_A compared to TPT. Empirical thermal model (without the need of construction material properties): Empirical thermal model for one-cell module was developed based on the input data of irradiance, wind speed and ambient temperatures. The primary input data differentiator for temperature differences between TPT and TCBs appears to be the irradiance level (solar gain). Accelerated durability testing: 20 four-cell modules using 4 backsheets (1 TPT and 3 TCBs) were exposed to Damp Heat 1000 hours (8 modules), UV/Thermal cycling (50 cycles)/Humidity freeze (10 cycles) test sequence (8 modules) and UV Weathering for qualification (8 modules). All the modules with four selected backsheets passed the stress tests per the retest guidelines of IEC 61215 standard for the backsheet change. Simplified comparative LCOE analysis: Using backsheet-specific power degradation levels in the accelerated tests (for TCB_A and TPT only), efficiency, service lifetime and assuming same cost for all backsheets, the LCOE of modules using TCB_A is determined to be lower than TPT. Due to lower operating temperature of TCB_A-based modules compared to TPT-based modules, the operating efficiency and service life of TCB_A-based modules are calculated to be higher than TPT-based modules. Temperature mapping of PV power plants: A distinct temperature difference (as high as 4°C) has been observed between the modules located in various parts of a single PV plant.

14 SOLAR ENERGY↗
DOE OSTI2025

Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)

4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.

42 ENGINEERING↗