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At least 55 records · Page 3

Analysis of the Impact of Radiation on Cameras and Robotic Perception - 19242

Robotic systems are increasingly used for inspection, maintenance, and disaster assistance for nuclear power plants. These robots utilize increasingly high levels of autonomy to operate in environments that are unsafe for humans to operate the robot in or require more precise control over the robot than a human can offer. In these cases, the robot must include perception and computation components to autonomously sense and navigate through the environment to fulfill its mission. This difficult task is complicated by radiation interfering with sensors' operation. The impact of this interference is largely unexplored, as existing works on radiation interference on sensors focus on estimating the incident radiation, rather than how it impacts a robotic system using the sensor. In this work, we seek to quantify and describe the impact of radiation on cameras, and how the radiation affects robotic performance. In this paper we study cameras that are suitable for small, lightweight unmanned aerial vehicles (UAVs) that are increasingly deployed to fly in confined areas in emergencies, where the surrounding environment is unsafe for workers to operate. These small UAVs lack the payload capacity to carry significant radiation shielding, so any onboard sensors will be affected by radiation. In the case of cameras, this radiation appears as noise in the camera imagery. This noise will interfere with the UAV's operation, by obscuring obstacles and interfering with localization and optical flow algorithms that detect detailed features in the environment. To date, there is a lack of information on how the radiation noise in the camera image impacts the overall robot system performance Existing work focuses on estimating the amount of incident radiation by measuring the corruption in the images. However, these works suffer several shortcomings for robotic systems. First, a robot must be able to successfully navigate its environment during a successful mission, and merely quantifying the amount of radiation noise in an image does not adequately explain how it may interfere with higher level navigation and perception tasks. Second, radiation estimation procedures rely on focusing the camera on a known and static background. This is unsuitable for robotic exploration tasks, where the robot frequently moves around an unknown environment that may be dynamically changing. Our work contains two contributions that address these shortcomings. First, we conduct a detailed analysis of the noise radiation causes in cameras by exposing cameras that are commonly used on UAVs [e.g., small form factor complementary metal-oxide-semiconductor (CMOS) cameras] to varying levels of radiation that may be present in emergency scenarios. From this exposure, we quantify not only how much noise is present, but quantify its appearance. By quantifying the appearance and amount of noise in a camera image, researchers can design mitigation strategies for the corruption, so that their robotic systems can operate in these challenging environments. Second, we demonstrate how to leverage this experimental data in robotic simulations. Using data from the first set of experiments allows us to test and verify the robots in simulation. Using simulators allows us to verify the robots will perform as expected during critical times without needing expensive test equipment or damaging valuable robot prototypes. Other researchers using robots for exploration of irradiated environments will benefit from our research by incorporating similar noise models in their research. 1 Southwest Research Institute{sup R} is a registered trademark of Southwest Research Institute in the United States and/or other countries. This will increase the reliability of robotic systems prior to deployment in emergency situations, which will in turn increase their effectiveness and speed the development of robots that would otherwise need expensive and time-consuming test procedures to validate. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Benchmark Data Set of Crystalline Organic Semiconductors

This work reports a Benchmark Data set of Crystalline Organic Semiconductors to test calculations of the structural and electronic properties of these materials in the solid state. The data set contains 67 crystals consisting of mostly rigid molecules with a single dominant conformer, covering the majority of known structural types. The experimental crystal structure is available for the entire data set, whereas zero-temperature unit cell volume can be reliably estimated for a subset of 28 crystals. Using this subset, we benchmark r 2 SCAN-D3 and PBE-D3 density functionals. Then, for the entire data set, we benchmark approximate density functional theory (DFT) methods, including GFN1-xTB and DFTB3(3ob-3-1), with various dispersion corrections against r 2 SCAN-D3. Our results show that r 2 SCAN-D3 geometries are accurate within a few percent, which is comparable to the statistical uncertainty of experimental data at a fixed temperature, but the unit cell volume is systematically underestimated by 2% on average. The several times faster PBE-D3 provides an unbiased estimate of the volume for all systems except for molecules with highly polar bonds, for which the volume is substantially overestimated in correlation with the underestimation of atomic charges. Considered approximate DFT methods are orders of magnitude faster and provide qualitatively correct but overcompressed crystal structures unless the dispersion corrections are fitted by unit cell volume.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Jupiter radiation test levels and their expected impact on an encounter mission

The upper limit, of electron and proton fluences for a thermoelectric outer planet spacecraft mission in a near-Jupiter environment, for use as radiation design restraints, were extracted from a model of the Jovian trapped radiation belts. Considerations of radiation effects in semiconductor devices were employed to construct simplified radiation test levels based on the design restraints. Corresponding levels, based on the nominal belt models, are one to three orders of magnitude smaller. In terms of expected radiation-induced degradation in semiconductor devices, an encounter with an environment as severe as the design restraints would require hardening the system in order to guarantee high reliability. On the other hand, the nominal levels would only necessitate care in the selection of components and the avoidance of certain semiconductor components.

Barengoltz, J. B.↗

NASA Tech Briefs, February 2014

Topics include: JWST Integrated Simulation and Test (JIST) Core; Software for Non-Contact Measurement of an Individual's Heart Rate Using a Common Camera; Rapid Infrared Pixel Grating Response Testbed; Temperature Measurement and Stabilization in a Birefringent Whispering Gallery Resonator; JWST IV and V Simulation and Test (JIST) Solid State Recorder (SSR) Simulator; Development of a Precision Thermal Doubler for Deep Space; Improving Friction Stir Welds Using Laser Peening; Methodology of Evaluating Margins of Safety in Critical Brazed Joints; Interactive Inventory Monitoring; Sensor for Spatial Detection of Single-Event Effects in Semiconductor-Based Electronics; Reworked CCGA-624 Interconnect Package Reliability for Extreme Thermal Environments; Current-Controlled Output Driver for Directly Coupled Loads; Bulk Metallic Glasses and Matrix Composites as Spacecraft Shielding; Touch Temperature Coating for Electrical Equipment on Spacecraft; Li-Ion Electrolytes Containing Flame-Retardant Additives; Autonomous Robotic Manipulation (ARM); CARVE Log; Platform Perspective Toolkit; Convex Hull-Based Plume and Anomaly Detection; Pre-Filtration of GOSAT Data Using Only Level 1 Data and an Intelligent Filter to Remove Low Clouds; Affordability Comparison Tool - ACT; "Ascent - Commemorating Shuttle" for iPad; Cassini Mission App; Light-Weight Workflow Engine: A Server for Executing Generic Workflows; Model for System Engineering of the CheMin Instrument; Timeline Central Concepts; Parallel Particle Filter Toolkit; Particle Filter Simulation and Analysis Enabling Non-Traditional Navigation; Quasi-Terminator Orbits for Mapping Small Primitive Bodies; The Subgrid-Scale Scalar Variance Under Supercritical Pressure Conditions; Sliding Gait for ATHLETE Mobility; and Automated Generation of Adaptive Filter Using a Genetic Algorithm and Cyclic Rule Reduction.

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Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis

Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics stems from piracy of intellectual properties (IP) and counterfeiting, which causes significant revenue loss to the semiconductor manufacturers. Further, these components often lead to compromised functionality, reliability, security, and safety of an electronic system. This paper presents secure information transmission and probing methods for verifying the integrity of digital integrated circuit (ICs) based on their electromagnetic (EM) near-field emissions and thereby protecting systems against counterfeit components. The proposed method has been tested on both high-level instructions executed by microprocessors or Systems-on-Chip (serving as examples of software), and also logic circuits within FPGA fabrics and ASICs (serving as examples of hardware). The authentication information required by each digital system is generated using a pseudo-random number generator circuit and securely transmitted via near-field magnetic emissions. The authorized party can probe these emissions using a near-field probe, process the acquired signals to improve the signal-to-noise ratio (SNR), and then recover the secure information through matched filtering. Experimental results from commercial SoCs are used to demonstrate the proposed technique. Methods for reducing EM interference during integrity verification of both FPGAs and ASICs are also described.

47 OTHER INSTRUMENTATION↗

Environmental testing of a diode-laser-pumped Nd:YAG laser and a set of diode-laser-arrays

Results of the environmental test of a compact, rigid and lightweight diode-laser-pumped Nd:YAG laser module are discussed. All optical elements are bonded onto the module using space applicable epoxy, and two 200 mW diode laser arrays for pump sources are used to achieve 126 mW of CW output with about 7 percent electrical-to-optical conversion efficiency. This laser assembly and a set of 20 semiconductor diode laser arrays were environmentally tested by being subjected to vibrational and thermal conditions similar to those experienced during launch of the Space Shuttle, and both performed well. Nevertheless, some damage to the laser front facet in diode lasers was observed. Significant degradation was observed only on lasers which performed poorly in the life test. Improvements in the reliability of the Nd:YAG laser are suggested.

Hemmati, H.↗

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

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Diamond shines in high-power devices

The 20-W S-band power amplifiers aboard the GOES E and F spacecraft exemplify the problems that type-IIa diamond heat sinks have been developed to solve, including the requirement for junction temperatures to be kept below 125 C. Diamond heat sinks allow high power S-band semiconductors to operate at a flange temperature of 70 C without exceeding the stipulated maximum junction temperature. Type-IIA diamond, which is an excellent electrical insulator, possesses a thermal conductivity four times better than pure copper at 100 C, and outperforms BeO by an even greater margin. Higher costs are offset by high reliability. Attention is presently given to the results of tests conducted by the NASA Goddard Space Flight Center.

Line, L.↗

A study of DC-DC converters with MCT's for arcjet power supplies

Many arcjet DC power supplies use PWM full bridge converters with large arrays of parallel FET's. This report investigates an alternative supply using a variable frequency series resonant converter with small arrays of parallel MCT's (metal oxide semiconductor controlled thyristors). The reasons for this approach are to: increase reliability by reducing the number of switching devices; and decrease the surface mounting area of the switching arrays. The variable frequency series resonant approach is used because the relatively slow switching speed of the MCT precludes the use of PWM. The 10 kW converter operated satisfactorily with an efficiency of over 91 percent. Test results indicate this efficiency could be increased further by additional optimization of the series resonant inductor.

Stuart, Thomas A.↗

The Single Event Effect Characteristics of the 486-DX4 Microprocessor

This research describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. SEE effects are caused by radiation particles that disrupt the logic state of an operating semiconductor, and include single event upsets (SEU) and single event latchup (SEL). The relevance of this work can be applied directly to digital devices that are used in spaceflight computer systems. The 486-DX4 is a powerful commercial microprocessor that is currently under consideration for use in several spaceflight systems. As part of its selection process, it must be rigorously tested to determine its overall reliability in the space environment, including its radiation susceptibility. The goal of this research is to experimentally test and characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. The test philosophy is to focus on the "operational susceptibility," by executing real software and monitoring for errors while the device is under irradiation. This research encompasses both experimental and analytical techniques, and yields a characterization of the 486-DX4's behavior for different operating modes. Additionally, the test methodology can accommodate a wide range of digital devices, such as microprocessors, microcontrollers, ASICS, and memory modules, for future testing. The goals were achieved by testing with three heavy-ion species to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different vendors. A consistent set of error modes were identified that indicate the manner in which the errors were detected in the processor. The upset cross-section curves were calculated for each error mode, and the SEU threshold and saturation levels were identified for each processor. Results show a distinct difference in the upset rate for different configurations of the on-chip cache, as well as proving that one vendor is superior to the other in terms of latchup susceptibility. Results from this testing were also used to provide a mean-time-between-failure estimate of the 486-DX4 operating in the radiation environment for the International Space Station.

Kouba, Coy↗

Accelerated Scaling to Rapid Open-Air Fabrication of Durable Perovskite Solar Modules

The goals of this SETO project (DE-EE0008559, Accelerated Scaling to Rapid Open-Air Fabrication of Durable Perovskite Solar modules) are to address the principal challenges towards the successful commercialization of perovskite solar modules utilizing scalable, high-throughput open-air spray deposition. The successful outcome of the project will provide the foundation of an all open-air spray deposited perovskite solar module with hole transport layer (HTL), perovskite, electron transport layer (ETL), and barrier layer development while establishing a fundamental understanding of perovskite device behavior under accelerated aging conditions. Through this program, we have made significant progress towards a commercializable pathway for perovskites. (1) We’ve demonstrated the successful open-air deposition of perovskite and transport layer materials. These deposition methods were chosen for their inherent scalability, and open-air processing enables a significant reduction in processing costs. These methods are also compatible with high throughputs, demonstrating the fastest perovskite film deposition at these performance levels. (2) Development of a unique all-fiber laser scribing procedure provides a high-performance, low-cost method for further improvements in scalability. (3) Our group has also placed a unique emphasis on device stability. The development of testing standards for perovskite modules is required to thoroughly evaluate potential candidates for commercialization, and we’ve taken inspiration from current industry standards to provide an honest insight into the performance and reliability of our devices. (4) An extensive cost model detailing the specific contributions of each device layer and production component provides the most thorough evaluation of any perovskite technology against conventional silicon and compound semiconductor solar devices. The cost model is a critical advancement that will provide the foundation for evaluating the levelized cost of energy (LCOE) of this technology.

14 SOLAR ENERGY↗

Die Attachment for -120 C to +20 C Thermal Cycling of Microelectronics for Future Mars Rovers: An Overview

Active thermal control for electronics on Mars Rovers imposes a serious penalty in weight, volume, power consumption, and reliability. Thus, we propose that thermal control be eliminated for future Rovers. From a functional standpoint there is no reason that the electronics could not operate over the entire temperature range of the Martian environment, which can vary from a low of approximately equal -90 C to a high of approximately equal +20 C during the Martian night and day. The upper end of this range is well within that for conventional electronics. Although the lower end is considerably below that for which conventional--even high-reliability electronics is designed or tested, it is well established that electronic devices can operate to such low temperatures. The primary concern is reliability of the overall electronic system, especially in regard to the numerous daily temperature cycles that it would experience over the duration of a mission on Mars. Accordingly, key reliability issues have been identified for elimination of thermal control on future Mars Rovers. One of these is attachment of semiconductor die onto substrates and into packages. Die attachment is critical since it forms a mechanical, thermal and electrical interface between the electronic device and the substrate or package. This paper summarizes our initial investigation of existing information related to this issue, in order to form an opinion whether die attachment techniques exist, or could be developed with reasonable effort, to withstand the Mars thermal environment for a mission duration of approximately I year. Our conclusion, from a review of literature and personal contacts. is that die attachment can be made sufficiently reliable to satisfy the requirements of future Mars Rovers. Moreover, it appears that there are several possible techniques from which to choose and that the requirements could be met by judicious selection from existing methods using hard solders, soft solders, or organic adhesives. Thus from the standpoint of die attachment. it appears feasible to eliminate thermal control for Rover electronics. We recommend that this be further investigated and verified for the specific hardware and thermal conditions appropriate to Mars Rovers.

Kirschman, Randall K.↗

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗

High reliability bond program using small diameter aluminum wire

The program was undertaken to characterize the performance of small diameter aluminum wire ultrasonically bonded to conductors commonly encountered in hybrid assemblies, and to recommend guidelines for improving this performance. Wire, 25.4, 38.1 and 50.8 um (1, 1.5 and 2 mil), was used with bonding metallization consisting of thick film gold, thin film gold and aluminum as well as conventional aluminum pads on semiconductor chips. The chief tool for evaluating the performance was the double bond pull test in conjunction with a 72 hour - 150 C heat soak and -65 C to +150 C thermal cycling. In practice the thermal cycling was found to have relatively little effect compared to the heat soak. Pull strength will decrease after heat soak as a result of annealing of the aluminum wire; when bonded to thick film gold, the pull strength decreased by about 50% (weakening of the bond interface was the major cause of the reduction). Bonds to thin film gold lost about 30 - 40% of their initial pull strenth; weakening of the wire itself at the bond heel was the predominant cause. Bonds to aluminum substrate metallization lost only about 22%. Bonds between thick and thin film gold substrate metallization and semiconductor chips substantiated the previous conclusions but also showed that in about 20 to 25% of the cases, bond interface failure occurred at the semiconductor chip.

Macha, M.↗

Impact of Scaled Technology on Radiation Testing and Hardening

This presentation gives a brief overview of some of the radiation challenges facing emerging scaled digital technologies with implications on using consumer grade electronics and next generation hardening schemes. Commercial semiconductor manufacturers are recognizing some of these issues as issues for terrestrial performance. Looking at means of dealing with soft errors. The thinned oxide has indicated improved TID tolerance of commercial products hardened by "serendipity" which does not guarantee hardness or say if the trend will continue. This presentation also focuses one reliability implications of thinned oxides.

LaBel, Kenneth A.↗

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Adell, Philippe C.↗

High Performance Parallel Computational Nanotechnology

At a recent press conference, NASA Administrator Dan Goldin encouraged NASA Ames Research Center to take a lead role in promoting research and development of advanced, high-performance computer technology, including nanotechnology. Manufacturers of leading-edge microprocessors currently perform large-scale simulations in the design and verification of semiconductor devices and microprocessors. Recently, the need for this intensive simulation and modeling analysis has greatly increased, due in part to the ever-increasing complexity of these devices, as well as the lessons of experiences such as the Pentium fiasco. Simulation, modeling, testing, and validation will be even more important for designing molecular computers because of the complex specification of millions of atoms, thousands of assembly steps, as well as the simulation and modeling needed to ensure reliable, robust and efficient fabrication of the molecular devices. The software for this capacity does not exist today, but it can be extrapolated from the software currently used in molecular modeling for other applications: semi-empirical methods, ab initio methods, self-consistent field methods, Hartree-Fock methods, molecular mechanics; and simulation methods for diamondoid structures. In as much as it seems clear that the application of such methods in nanotechnology will require powerful, highly powerful systems, this talk will discuss techniques and issues for performing these types of computations on parallel systems. We will describe system design issues (memory, I/O, mass storage, operating system requirements, special user interface issues, interconnects, bandwidths, and programming languages) involved in parallel methods for scalable classical, semiclassical, quantum, molecular mechanics, and continuum models; molecular nanotechnology computer-aided designs (NanoCAD) techniques; visualization using virtual reality techniques of structural models and assembly sequences; software required to control mini robotic manipulators for positional control; scalable numerical algorithms for reliability, verifications and testability. There appears no fundamental obstacle to simulating molecular compilers and molecular computers on high performance parallel computers, just as the Boeing 777 was simulated on a computer before manufacturing it.

Saini, Subhash↗

Flexible Electrostatic Technologies for Capture and Handling, Phase 1

Fundamental to many of NASA's in-space transportation missions is the capture and handling of various objects and vehicles in various orbits for servicing, debris disposal, sample retrieval, and assembly without the benefit of sufficient grapple fixtures and docking ports. To perform similar material handling tasks on Earth, pincher grippers, suction grippers, or magnetic chucks are used, but are unable to reliably grip aluminum and composite spacecraft, insulation, radiators, solar arrays, or extra-terrestrial objects in the vacuum of outer space without dedicated handles in the right places. The electronic Flexible Electrostatic Technologies for space Capture and Handling (FETCH) will enable reliable and compliant gripping (soft dock) of practically any object in various orbits or surfaces without dedicated mechanical features, very low impact capture, and built-in proximity sensing without any conventional actuators. Originally developed to handle semiconductor and glass wafers during vacuum chamber processing without contamination, the normal rigid wafer handling chucks are replaced with thin metal foil segments laminated in flexible insulation driven by commercial off-the-shelf solid state, high-voltage power supplies. Preliminary testing in NASA Marshall Space Flight Center's (MSFC's) Flat Floor Robotics Lab demonstrated compliant alignment and gripping with a full-sized, 150-lb microsat mockup and translation before a clean release with a flip of a switch. The flexible electrostatic gripper pads can be adapted to various space applications with different sizes, shapes, and foil electrode layouts even with openings through the gripper pads for addition of guidance sensors or injection of permanent adhesives. With gripping forces estimated between 0.5 and 2.5 lb/in2 or 70-300 lb/ft2 of surface contact, the FETCH can turn on and off rapidly and repeatedly to enable sample handling, soft docking, in-space assembly, precision relocation, and surface translation for accurate anchoring.

Bryan, Thomas↗