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All sources NASA NTRS DOE OSTI

DOE OSTI2012

Band-Structure, Optical Properties, and Defect Physics of the Photovoltaic Semiconductor SnS

SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m{sub 0} perpendicular to the van der Waals layers to 0.2 m{sub 0} into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

14 SOLAR ENERGY↗

DOE OSTI2021

SnS Homojunction Solar Cell with n-Type Single Crystal and p-Type Thin Film

Herein, a pn homojunction SnS solar cell is fabricated for the first time by the deposition of p-type SnS polycrystalline thin films on the recently reported large n-type SnS single crystals. The p-type thin films consist of columnar grains that grow along the <100> direction, which is the same orientation as the n-type single crystal. In addition, the interface of the pn homojunctions is void-free and compositionally sharp. The SnS homojunction solar cell achieves an open-circuit voltage (VOC) of 360 mV, which is as large as the highest VOC of previously reported SnS-based heterojunction solar cells. The built-in potential of the homojunction cell is 0.92 eV, which is close to the bandgap energy of SnS (≈1.1 eV), and larger than reported for heterojunctions (≈0.7 eV). The resulting 1.4% conversion efficiency (n) of the homojunction solar cell is smaller than the record 4–5% in heterojunctions, mainly due to the low short-circuit current density (J SC ) of 7.5 mA cm -2 . Once the device structure of the homojunction cell is optimized to efficiently collect the photogenerated carriers and achieve a comparable J SC as the conventional heterojunction cells (≈25 mA cm -2 ), high n exceeding 4–5% will be realized with improving the VOC.

14 SOLAR ENERGY↗

DOE OSTI2019

Influence of Al doping concentration on the opto-electronic chattels of SnS thin films readied by NSP

Herein, we limelight the key features of SnS thin films coated by spray pyrolysis process with different Al doping concentrations. The SnS thin films coated with different Al concentration (0, 2, 4, 6 at wt%) were characterized by various techniques. Structural parameters studied by XRD data revealed that all the prepared films were orthorhombic crystal structure with (111) as a preferential direction. Raman spectroscopy showed the presence of Ag, B{sub 1g}, B{sub 2g}, and B{sub 3g} vibration modes at their corresponding wave numbers. Concentration dependent granular change of Al:SnS films were shown by AFM images. The presence of Sn, S and Al element without any other impurities was confirmed through EDAX picture. UV studies revealed the shrinkage of band gap from 1.97 to 1.72 eV on increasing the Al doping concentration from 0% to 4 at wt%. Room temperature PL showed a high intense red shift, as emission observed at 722 nm for 4% of Al doped SnS thin film. Hall measurements exhibited p-type conducting nature of undoped and Al doped SnS films. The films showed a lowest resistivity of 2.695×10{sup −1} Ω cm for 4 at wt% Al doping concentration. 0.093% efficiency was obtained for the solar cell device fabricated by 4 at wt% of Al doped SnS thin film.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2018

N-doped CMK-3 anchored with SnS{sub 2} nanosheets as anode of lithium ion batteries with superior cyclic performance and enhanced reversible capacity

Highlights: • composites prepared by a facile hot bath method at low temperature display a high initial capacity and maintain excellent reversible capacity. - Abstract: The composites of N-doped ordered mesoporous carbon (N-CMK-3) anchored with tin disulfide (SnS{sub 2}) nanosheets (NSs) have been synthesized via a maneuverable hot bath method at low temperature. The as-synthesized SnS{sub 2}@N-CMK-3 composites exhibit a hierarchical structure with two dimensional (2D) SnS{sub 2} nanosheets uniformly grown on N-CMK-3, leading to a large specific area (126.7 m{sup 2} g{sup −1}) with mesoscale porosity. As anode material for lithium ion batteries (LIBs), SnS{sub 2}@N-CMK-3 composite exhibits a high initial capacity of 1438.9 mA h g{sup −1} (200 mA g{sup −1}). Moreover, the electrochemical performance remained at 618.9 mA h g{sup −1} after 200 cycles, which are significantly higher than that of the pristine SnS{sub 2}. The outstanding electrochemical properties might be due to the 2D nanosheet-morphology feature of SnS{sub 2} and the addition of N-CMK-3 that could availably inhibit the agglomeration of active substances and raise the conductivity of the composite electrode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

All roads lead to Rome: Sodiation of different-stacked SnS 2

Structural symmetry variations of two-dimensional materials may significantly affect their reaction process and kinetics with alkali ions. Here, SnS 2 with different structural symmetry is used as the target to be comparatively investigated the phase transition pathway and ionic diffusion upon (de)sodiation in sodium-ion batteries using in situ transmission electron microscopy and ex situ x-ray photoelectron spectroscopy in combination with first-principles calculations. Different intermediate phases, AA1 NaSnS 2 for trigonal SnS 2 and AB1 NaSnS 2 for hexagonal SnS 2 , are observed after sodium ions fully occupy all Oh sites. While the coming conversion/alloying reaction processes are relatively similar. The AA1/AB1 NaSnS 2 sequentially transits to SnS, β-Sn and Na 15 Sn 4 phases starting from T d sites of SnS 2 being held. Reversible reactions occur among SnS, Na 15 Sn 4 and Na 2 S m (2

25 ENERGY STORAGE↗

DOE OSTI2012

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2-3 {mu}m is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, {alpha}, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of {alpha} of the order of 10{sup 4} cm{sup -1}. Sharp cutoff in the values of {alpha}, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 10{sup 16} cm{sup -3} and 5 x 10{sup 17}cm{sup -3} by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm{sup 2}V{sup -1}s{sup -1} is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Upgrading the LANSCE accelerator with a SNS RF-driven H− ion source

The LANSCE accelerator is currently powered by a filament-driven, biased converter-type H− ion source that operates at 10%, the highest plasma duty factor for this type of source, using only ∼2.2 SCCM of H2. The ion source needs to be replaced every 4 weeks, which takes up to 4 days. The measured negative beam current of 12–16 mA falls below the desired 24 mA acceptance of the LANCSE accelerator. The SNS (Spallation Neutron Source) RF-driven, H− ion source injects ∼50 mA of H− beam into the SNS accelerator at 60 Hz with a 6% duty factor and an availability of >99.5% but requires ∼30 SCCM of H2. Up to 7 A h of H− have been produced during the 14-weeks-long source service cycles, which is unprecedented for small emittance, high-current, pulsed H− ion sources. The emittance of the SNS source is slightly smaller than the emittance of the LANSCE source. The SNS source also features unrivaled low Cs consumption and can be installed and started up in <12 h. LANSCE and SNS are working toward the use of SNS H− ion sources on the LANSCE accelerator because they could (a) fill the LANSCE accelerator to its capacity, (b) decrease the source replacement time by a factor of up to 7, and (c) increase source lifetime by a factor of about 4. This paper discusses some of the challenges that emerge when trying to match a different H− source into an existing injector with significantly different characteristics and operating regimes.

Stockli, Martin P.↗

DOE OSTI2021

Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity

Group IV monochalcogenides, anisotropic van der Waals crystals (and black phosphorus analogues), are attracting increasing interest due to a number of exceptional properties including anisotropic optoelectronics and multiferroicity predicted and in part realized in the ultrathin limit. Due to their enhanced chemical reactivity, both exfoliation and synthesis of monolayer and few-layer crystals pose challenges not found in other 2D/layered materials, such as the transition metal dichalcogenides. In this work, we show that SnS synthesis on SnS 2 van der Waals substrates can address these challenges and consistently produces few-layer flakes, a capability that is explained via analysis of real-time microscopy of the growth process. Raman spectroscopy combined with efficient computations of the Raman-active modes across an extended thickness range enables a comprehensive understanding of the evolution of the vibrational properties of SnS with number of layers. Lateral piezoresponse force microscopy provides unprecedented insight into the stacking-dependent polarization and ferroelectric domain structures in large few-layer SnS flakes. The combined results establish a basis for further fundamental studies and applications of SnS and other group IV monochalcogenides in the few-layer regime.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Laser-assisted high-energy proton pulse extraction for feasibility study of co-located muon source at the SNS

Here, we have experimentally demonstrated the first non-intrusive 1-GeV proton beam extraction for the generation of muons with a temporal structure optimized for Muon Spin Relaxation/Rotation/Resonance (μSR) applications. The proton pulses are extracted based on the laser neutralization of 1 GeV hydrogen ion (H - ) beam in the high energy beam transport of the Spallation Neutron Source (SNS) accelerator. The maximum flux of the extracted proton beam based on laser neutralization causes only 0.2% reduction of the total proton beam used for neutron production, a marked difference from the 20% reduction at other co-located muon and neutron facilities, and thus the proposed method will result in negligible impact on the SNS operation. This paper describes the development of a fiber/solid-state hybrid laser system that has high flexibility of pulse structure and output power, initial experiments on laser neutralization of beam and separation of H 0 beam from the existing SNS accelerator beam line, conversion of H 0 to proton at the SNS linac dump, and measurement results of 30 ns/50 kHz proton pulses. This system conclusively demonstrates the feasibility of laser-based proton beam extraction to power a world-leading μSR facility at the SNS.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics

The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. Further, the results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.

2D layered crystals↗

DOE OSTI2014

Photo-enhanced field emission characteristics of SnS{sub 2} nanosheets

In the present studies, we demonstrate a facile hydrothermal route to synthesize elegant SnS{sub 2} nanosheets. The x-ray diffraction pattern clearly revealed formation of SnS{sub 2} phase under the hydrothermal conditions. SEM and TEM analysis indicated formation of very thin SnS{sub 2} nanosheets. Field electron emission studies of the SnS{sub 2} nanosheets emitter were preformed at base pressure of 1×10{sup −8} mbar. The value of turn-on field, corresponding to an emission current density of ∼1 μA/ cm2, was found to be ∼ 4.6 V/μm. Interestingly, when the cathode was illuminated with visible light, it exhibited lower turn-on field of ∼ 4.2 V/μm, along with nearly 2.5 times enhancement in the emission current. Furthermore, the photo-enhanced emission characteristic shows a reproducible switching behavior. The photo-enhanced filed emission characteristics along with reproducible switching behaviour propose the SnS{sub 2} nanosheets emitter as a promising candidate for nano-optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2015

Numerical modeling of the SNS H{sup −} ion source

Ion source rf antennas that produce H- ions can fail when plasma heating causes ablation of the insulating coating due to small structural defects such as cracks. Reducing antenna failures that reduce the operating capabilities of the Spallation Neutron Source (SNS) accelerator is one of the top priorities of the SNS H- Source Program at ORNL. Numerical modeling of ion sources can provide techniques for optimizing design in order to reduce antenna failures. There are a number of difficulties in developing accurate models of rf inductive plasmas. First, a large range of spatial and temporal scales must be resolved in order to accurately capture the physics of plasma motion, including the Debye length, rf frequencies on the order of tens of MHz, simulation time scales of many hundreds of rf periods, large device sizes on tens of cm, and ion motions that are thousands of times slower than electrons. This results in large simulation domains with many computational cells for solving plasma and electromagnetic equations, short time steps, and long-duration simulations. In order to reduce the computational requirements, one can develop implicit models for both fields and particle motions (e.g. divergence-preserving ADI methods), various electrostatic models, or magnetohydrodynamic models. We have performed simulations using all three of these methods and have found that fluid models have the greatest potential for giving accurate solutions while still being fast enough to perform long timescale simulations in a reasonable amount of time. We have implemented a number of fluid models with electromagnetics using the simulation tool USim and applied them to modeling the SNS H- ion source. We found that a reduced, single-fluid MHD model with an imposed magnetic field due to the rf antenna current and the confining multi-cusp field generated increased bulk plasma velocities of > 200 m/s in the region of the antenna where ablation is often observed in the SNS source. We report here on comparisons of simulated plasma parameters and code performance using more accurate physical models, such as two-temperature extended MHD models, for both a related benchmark system describing a inductively coupled plasma reactor, and for the SNS ion source. We also present results from scaling studies for mesh generation and solvers in the USim simulation code.

07 ISOTOPE AND RADIATION SOURCES↗

DOE OSTI2019

Atomic layer deposition of energy band tunable tin germanium oxide electron transport layer for the SnS-based solar cells with 400 mV open-circuit voltage

Tin germanium oxide, (Sn,Ge)O 2 , films were prepared using atomic layer deposition and tailored to a SnS absorber layer by incorporating various amounts of germanium into tin oxide to adjust band alignments at the interfaces of SnS/(Sn,Ge)O 2 photovoltaic devices. Carrier concentrations of (Sn,Ge)O 2 were suppressed from 10 20 to 10 18 cm -3 with germanium incorporation, with nitrogen doping further reducing carrier concentrations by another order of magnitude. Excellent tunability of both band energy levels and carrier concentrations of (Sn,Ge)O 2 allowed optimizing SnS-based solar cells. SnS/(Sn,Ge)O 2 :N devices were demonstrated, with an open-circuit voltage as high as 400 mV, due to the effective mitigation of interfacial recombination of photogenerated carriers at the SnS/(Sn,Ge)O 2 :N absorber-buffer heterojunction interface.

Sulfur compounds↗

DOE OSTI2018

The SNS Moderator Demonstration Facility

We describe a moderator demonstration facility at the Spallation Neutron Source (SNS). We will use the Beam Test Facility (BTF) at SNS to provide a moderator neutronics test stand with which we will verify the performance gains expected from the innovative moderator concepts central to the SNS Second Target Station. These concepts include large-volume para-hydrogen moderators and high-brightness moderators, as well as new moderator materials. The BTF provides a test facility for the new Radio-Frequency Quadrupole accelerator (RFQ) to be installed at SNS and produce a pulsed H− beam of 2.5 MeV energy. We will add to the BTF a beam chopper similar to that already used in the SNS at the RFQ exit, various beam transport components, a neutron-producing target, a cryogenic moderator test stand, a reflector-shielding assembly, and a performance assessment neutron beamline.

Iverson, Erik B.↗

DOE OSTI2024

H - Ion Source RF Plasma Testing with 13 MHz and 27 MHz at the Spallation Neutron Source (SNS)

The baseline RF-driven H⁻ ion source configuration at the Spallation Neutron Source (SNS) facility uses a continuous wave (CW) 600 W 13 MHz RF system to ignite and maintain a low-density plasma inside the ion source vacuum chamber. After the continuous low-density 13 MHz plasma has been established, a pulsed (typical 1 ms pulse width and 60 Hz pulse repetition rate) 80 kW 2 MHz RF system is used to increase the plasma density to produce the pulsed H⁻ ion beam. Incremental upgrades and improvements to the SNS ion source systems have resulted in the ability to reliably operate an H⁻ ion source for SNS neutron production run cycles that can last up to four months. Conditions inside the SNS H⁻ ion source evolve throughout a four-month run cycle due to changes in impurity levels, sputtering, and erosion. As the internal ion source conditions change during the run cycle, there can also be changes in plasma stability and the 13 MHz RF power level required to ignite the plasma. This paper presents the preliminary results of testing performed on the SNS Ion Source Test Stand (ISTS) system where we looked at plasma ignition and plasma stability using 27 MHz RF in place of the baseline 13 MHz RF system.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

SNS: A Solution-Based Nonlinear Subspace Method for Time-Dependent Model Order Reduction

Several reduced order models have been successfully developed for nonlinear dynamical systems. To achieve a considerable speed-up, a hyper-reduction step is needed to reduce the computational complexity due to nonlinear terms. Many hyper-reduction techniques require the construction of nonlinear term basis, which introduces a computationally expensive offline phase. A novel way of constructing nonlinear term basis within the hyper-reduction process is introduced. In contrast to the traditional hyper-reduction techniques where the collection of nonlinear term snapshots is required, the SNS method avoids collecting the nonlinear term snapshots. Instead, it uses the solution snapshots that are used for building a solution basis, which enables avoiding an extra data compression of nonlinear term snapshots. As a result, the SNS method provides a more efficient offline strategy than the traditional model order reduction techniques, such as the DEIM, GNAT, and ST-GNAT methods. The SNS method is theoretically justified by the conforming subspace condition and the subspace inclusion relation. It is useful for model order reduction of large-scale nonlinear dynamical problems to reduce the offline cost. It is especially useful for ST-GNAT that has shown promising results, such as a good accuracy with a considerable online speed-up for hyperbolic problems in a recent paper by Choi and Carlberg [SIAM J. Sci. Comput., 41 (2019), pp. A26--A58], because ST-GNAT involves an expensive offline cost related to collecting nonlinear term snapshots. Error analysis for the SNS method is presented. Numerical results support that the accuracy of the solution from the SNS method is comparable to the traditional methods and a considerable speed-up (i.e., a factor of two to a hundred) is achieved in the offline phase.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1989

The implementation of the graphics of program EAGLE: A numerical grid generation code on NASA Langley SNS computer system

Program EAGLE (Eglin Arbitrary Geometry Implicit Euler) Numerical Grid Generation System is a composite (multi-block) algebraic or elliptic grid generation system designed to discretize the domain in and/or around any arbitrarily shaped three dimensional regions. This system combines a boundary conforming surface generation scheme and includes plotting routines designed to take full advantage of the DISSPLA Graphics Package (Version 9.0). Program EAGLE is written to compile and execute efficiently on any Cray machine with or without solid state disk (SSD) devices. Also, the code uses namelist inputs which are supported by all Cray machines using the FORTRAN compiler CFT77. The namelist inputs makes it easier for the user to understand the inputs and operation of Program EAGLE. EAGLE's numerical grid generator is constructed in the following form: main program, EGG (executive routine); subroutine SURFAC (surface generation routine); subroutine GRID (grid generation routine); and subroutine GRDPLOT (grid plotting routines). The EAGLE code was modified to use on the NASA-LaRC SNS computer (Cray 2S) system. During the modification a conversion program was developed for the output data of EAGLE's subroutine GRID to permit the data to be graphically displayed by IRIS workstations, using Plot3D. The code of program EAGLE was modified to make operational subroutine GRDPLOT (using DI-3000 Graphics Software Packages) on the NASA-LaRC SNS Computer System. How to implement graphically, the output data of subroutine GRID was determined on any NASA-LaRC graphics terminal that has access to the SNS Computer System DI-300 Graphics Software Packages. A Quick Reference User Guide was developed for the use of program EAGLE on the NASA-LaRC SNS Computer System. One or more application program(s) was illustrated using program EAGLE on the NASA LaRC SNS Computer System, with emphasis on graphics illustrations.

Houston, Johnny L.↗

DOE OSTI2022

Monitoring the SNS basement neutron background with the MARS detector

Here, we present the analysis and results of the first dataset collected with the MARS neutron detector deployed at the Oak Ridge National Laboratory Spallation Neutron Source (SNS) for the purpose of monitoring and characterizing the beam-related neutron (BRN) background for the COHERENT collaboration. MARS was positioned next to the COH-CsI coherent elastic neutrino-nucleus scattering detector in the SNS basement corridor. This is the basement location of closest proximity to the SNS target and thus, of highest neutrino flux, but it is also well shielded from the BRN flux by infill concrete and gravel. Furthermore, these data show the detector registered roughly one BRN per day. Using MARS' measured detection efficiency, the incoming BRN flux is estimated to be 1.20 ± 0.56 neutrons/m 2 /MWh for neutron energies above ~3.5 MeV and up to a few tens of MeV. We compare our results with previous BRN measurements in the SNS basement corridor reported by other neutron detectors.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗