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Web dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.
A systematic experimental study of the kinetics and mechanisms of the chemical reactions in the gas phase between ground-state Si(+)2p and a variety of astrophysical molecules. The aim of this study is to identify the reactions which trigger the formation of chemical bonds between silicon and carbon, oxygen and sulphur, and the chemical pathways which lead to further molecular growth. Such knowledge is valuable in the identification of new extraterrestrial silicon-bearing molecules and for an assessment of the gas-phase transition from atomic silicon to silicon carbide and silicate grain particles in carbon-rich and oxygen-rich astrophysical environments.
The high temperature oxidation of silicon carbide occurs in two very different modes. Passive oxidation forms a protective oxide film which limits further attack of the SiC: SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g) Active oxidation forms a volatile oxide and may lead to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g) Generally passive oxidation occurs at higher oxidant pressures and active oxidation occurs at lower oxidant pressures and elevated temperatures. Active oxidation is a concern for reentry, where the flight trajectory involves the latter conditions. Thus the transition points and rates of active oxidation are a major concern. Passive/active transitions have been studied by a number of investigators. An examination of the literature indicates many questions remain regarding the effect of impurity, the hysteresis of the transition (i.e. the difference between active-to-passive and passive-toactive), and the effect of total pressure. In this study we systematically investigate each of these effects. Experiments were done in both an alumina furnace tube and a quartz furnace tube. It is known that alumina tubes release impurities such as sodium and increase the kinetics in the passive region [1]. We have observed that the active-to-passive transition occurs at a lower oxygen pressure when the experiment is conducted in alumina tubes and the resultant passive silica scale contains sodium. Thus the tests in this study are conducted in quartz tubes. The hysteresis of the transition has been discussed in the detail in the original theoretical treatise of this problem for pure silicon by Wagner [2], yet there is little mention of it in subsequent literature. Essentially Wagner points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. A series of experiments were conducted for active-to-passive and passive-to-active transitions by increasing and decreasing oxygen pressure, respectively. For pure silicon a dramatic difference was found; whereas for SiC the difference was not as great. This may be due to the oxidation of the carbon in SiC which may break down the scale [3]. The third area is the effect of total pressure. In the literature, low oxygen potentials are achieved via either low total pressure or low oxygen pressure in an O2/Ar mixture. Both types of experiments are done in this study and the differences are discussed with regard to the presence or absence of a boundary layer.
Metal-oxide-silicon capacitor and radiochemical analyses of anion in sodium contamination failure mode
A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.
Oxidation resistance, and examples of oxidation of SiC, Si3N4 and sialon are reviewed. A description is given of the oxidation mechanism, including the oxidation product, oxidation reaction and the bubble size. The oxidation reactions are represented graphically. An assessment is made of the oxidation process, and an oxidation example of silicon ceramics is given.
Silicon oxide-silicon interface states at 77 degrees K
Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.
The effects of rare-earth oxide additions on the oxidation of sintered Si3N4 were examined. Insignificant oxidation occurred at 700 and 1000 C, with no evidence of phase instability. At 1370 C, the oxidation rate was lowest for Y2O3 and increased for additions of La2O3, Sm2O3, and CeO2, in that order. Data obtained from X-ray diffraction, electron microprobe analysis, and scanning electron microscopy indicate that oxidation occurs via diffusion of cationic species from Si3N4 grain boundaries.
This work focuses on the thermal oxidation of silicon near 1273 K using the double-tracer oxidation method. The results confirm that oxidation occurs by the transport of electrically neutral nonnetwork oxygen through the interstitial space of the vitreous silica (v-SiO2) scale. Simultaneously, self- (or isotopic-) diffusion occurs in the network, resulting in characteristic isotopic fraction distributions near the gas-scale interface. The self-diffusion coefficients calculated from these profiles agree with those reported for tracer diffusion in v-SiO2, and the diffusion coefficient calculated from the scale growth is consistent with reported O2 permeation data. An important parameter that describes the double-oxidation behavior is a ratio relating the scale thickness grown during the second oxidation, the network self-diffusion coefficient for oxygen, and the time of the second oxidation.
Four material coatings of different thicknesses were flown on the LDEF to determine their ability to perform in the harsh space environment. The coatings, located in the ram direction of the spacecraft, were exposed for 10 months to the low-Earth orbit (LEO) environments experienced by the LDEF at an orbit of 260 nautical miles. They consisted of indium oxide (In2O3), silicon oxide (SiO(x)), clear RTV silicone, and silicone with silicate-treated zinc oxide (ZnO). These coatings were flown to assess their behavior when exposed to atomic oxygen and to confirm their good radiative properties, stability, electrical conductivity, and resistance to UV exposure. The flown samples were checked and compared with the reference unflown samples using high-magnification optical inspection, ESCA analysis, weight changes, and dimensional changes. These comparisons indicated the following. The 1000 A SiO(x) coating eroded uniformly, with minor changes in its radiative properties. The 100 A In2O3 coating eroded completely down to the Kapton backing, with resultant losses of reflectance. The RTV-615 showed erosion, with carbon (C) content losses, while the Si remained constant, with a doubling of the oxygen (O) concentration. The RTV-615 silicone with K2SiO3-treated ZnO changed from flat to glossy white in appearance. It lost C, was etched, and increased its O content. The upper layers showed no remaining Zn or K. Losses of reflectance occurred within certain wavelength bands. It was not possible to evaluate the experimental oxygen reaction rate using the calculated atomic oxygen fluence of 2.6 x 10(exp 20) atoms/cm(exp 2) for the exposure of these coatings during the flight. The bakeout of the coatings was not carried out prior to the flight. Hence, the coating weight and dimensional losses included losses by outgassing products.
Four material coatings of different thickness were flown on the LDEF to determine their ability to perform in the harsh space environment. The coatings, located in the ram direction of the spacecraft, were exposed for 10 months to the low-Earth orbit (LEO) environment experienced by the LDEF at an orbit of 260 nautical miles. They consisted of indium oxide (In2O3), silicon oxide (SiO(x)), clear RTV silicone, and silicone with silicate-treated zinc oxide (ZnO). These coatings were flown to assess their behavior when exposed to atomic oxygen and to confirm their good radiative properties, stability, electrical conductivity, and resistance to UV exposure. The flown samples were checked and compared with the reference unflown samples using high-magnification optical inspection, ESCA analysis, weight changes and dimensional changes. These comparisons indicated the following: The 1000 A SiO(x) coating eroded uniformly, with minor changes in its radiative properties. The 100 A of In2O3 coating eroded completely down to the Kapton backing, with resultant losses of reflectance. The RTV-615 showed erosion, with carbon (C) content losses, while the Si remained constant, with a doubling of the oxygen (O) concentration. The RTV-615 silicone with K2SiO3-treated ZnO changed from flat to glossy white in appearance. It lost C, was etched, and increased its O content. The upper layers showed no remaining Zn or K. Losses of reflectance occurred within certain wavelength bands. It was not possible to evaluate the experimental oxygen reaction rate using the calculated atomic oxygen fluence of 2.6 x 10(exp 20) atoms/cm(exp 2) for the exposure of these coatings during the flight. The bakeout of the coatings was not carried out prior to the flight. Hence, the coating weight and dimensional losses included losses by outgassing products.
Water contaminating effects on thin thermal oxide passivated silicon planar devices
Mullite bond coats filled with silicon particles have recently been proposed for the next generation of environmental barrier coatings (EBCs). The sacrificial oxidation of the silicon particles eliminates some of the environmental durability issues associated with traditional EBC designs. To investigate this novel design approach, a mathematical formulation and resulting numerical method have been developed for simulating the oxidation of silicon particles embedded in a mullite matrix. The focus is on the oxidation of the silicon in a dry oxygen environment where the oxidant is presumably oxygen. Oxygen transport from the exterior environment through the mullite is assumed to occur via two lattice defect diffusion mechanisms. As a result, the rate of oxygen transport is dictated by the self-diffusivity of the lattice defects. The numerical method is implemented using the COMSOL Multiphysics® program (COMSOL, Inc.). The method is applied to simulate the oxidation of silicon particles in a mullite pellet in recent oxidation experiments. Numerical results compare favorably with the oxidation behavior observed in the oxidation experiments. The numerical method is also used to investigate the effects of various features of the mullite-silicon particle system on the oxidation behavior.
Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Ellipsometric studies on mechanism and kinetics of thin oxide films on silicon in air
The formulation of Deal and Grove for the oxidation of silicon and the growth of a silica layer is revisited to include the effects of a protective coating layer. The linear-parabolic equation of the form x_o^2+Ax_o=Bt is still applicable, but the expressions for the constants A and B must be modified to account for the coating. The modified expression for A is a linear function of the coating thickness. The expression for B is modified by the relative solubility of the outer coating layer. The modified expressions are applied to assess recently published experimental results for the oxidation of a silicon bond coat in an environmental barrier coating (EBC). Conclusions are drawn regarding the diffusivity and solubility of oxidants in the EBC top coating.
A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.