SEARCH · Engineering Papers

Results for “SI”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

All sources NASA NTRS DOE OSTI

NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗

NASA NTRS1994

Si 1-X Ge X /Si Heterojunction Internal Photoemission Long Wavelength Infrared Detector

Long wavelength Si 1-X Ge X /Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si 1-X Ge X layers on Si. Recently, Si 0.7 GE 0.3 /SI HIP detectors with either a Si 1-X Ge X single layer or a Si 1-X Ge X /Si multilayer have been demonstrated with cutoff wavelengths out to 23 µm. Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si 1-X Ge X /Si heterojunction internal photoemission infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C 1 , for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

infrared↗

NASA NTRS1985

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗

NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long wavelength infrared detectors

There is a major need for long-wavelength-infrared (LWIR) detector arrays in the range of 8 to 16 microns which operate with close-cycle cryocoolers above 65 K. In addition, it would be very attractive to have Si-based infrared (IR) detectors that can be easily integrated with Si readout circuitry and have good pixel-to-pixel uniformity, which is critical for focal plane array (FPA) applications. Here, researchers report a novel Si(1-x)Ge(x)/Si heterojunction internal photoemission (HIP) detector approach with a tailorable long wavelength infrared cutoff wavelength, based on internal photoemission over the Si(1-x)Ge(x)/Si heterojunction. The HIP detectors were grown by molecular beam epitaxy (MBE), which allows one to optimize the device structure with precise control of doping profiles, layer thickness and composition. The feasibility of a novel Si(1-x)Ge(x)/Si HIP detector has been demonstrated with tailorable cutoff wavelength in the LWIR region. Photoresponse at wavelengths 2 to 10 microns are obtained with quantum efficiency (QE) above approx. 1 percent in these non-optimized device structures. It should be possible to significantly improve the QE of the HIP detectors by optimizing the thickness, composition, and doping concentration of the Si(1-x)Ge(x) layers and by configuring the detector for maximum absorption such as the use of a cavity structure. With optimization of the QE and by matching the barrier energy to the desired wavelength cutoff to minimize the thermionic current, researchers predict near background limited performance in the LWIR region with operating temperatures above 65K. Finally, with mature Si processing, the relatively simple device structure offers potential for low-cost producible arrays with excellent uniformity.

Lin, T. L.↗

NASA NTRS1990

Oxidation of the Si(100) surface promoted by Sr overlayer - An X-ray photoemission study

The interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.

Mesarwi, A.↗

NASA NTRS1990

Superheavyweight missions SI versus DI: Ascent flight design options and recommendations

AFD has completed the trade study on Standard Insertion (SI) vs Direct Insertion (DI) for STS-50. RSOC Range Safety has developed acceptable DI targets from 130 n.mi. to 150 n.mi. and the corresponding performance assessment for these targets using STS-50 data has been completed. This mission has sufficient performance capability to perform this mission as a DI to 160 n.mi. A reduced OMS load corresponding to a DI mission is required for this option. The increase in altitude over the AFP baseline (SI to 145 n.mi.) is highly desirable for this mission. The orientation on orbit for the orbiter/USML-1 payload is such that orbital decay is maximized (maximum frontal cross-sectional area with vehicle normal to velocity vector). Increasing the operational altitude reduces the amount of vernier thruster firings necessary to maintain a constant gravity gradient. The results of this trade study can also be applied to other superheavyweight missions (EDO flights) and will allow for use of the DI technique for lower orbital altitudes, thereby eliminating the SI option for due east, low altitude missions. STSOC transmittal form no. 330-330-130, which documents the technical issues and assumptions used for this trade study effort in detail, should be referenced for further information. The main reason that a DI is desired for STS-50 and other superheavyweight flights (low altitude) is that ESMC range safety has expressed reservations about SI missions in general. The concern is that the current SI design underspeed exposes Africa and Madagascar to potential ET debris impact. In the past range safety has waived the requirement that these areas be protected in the event of an engine failure. With the advent of the pre-MECO OMS dump, the viability of DI and the high casualty expectations from the ACTA press to MECO hazard study, range safety has become more reluctant to approve SI flights. It is felt that to perform an SI mission there would have to be a large decrease in design underspeed to protect these landmasses, which would result in possible gaps between a late TAL and PTA. The assumed limit on a DI has been to altitudes greater than 160 n.mi. It was assumed that for altitudes less than 160 n.mi. the nominal ET impact envelope would overlap the Gilbert Islands.

Source record↗

NASA NTRS1991

Correlated Si isotope anomalies and large C-13 enrichments in a family of exotic SiC grains

A hypothesis is presented to the effect that the distinctive morphological characteristics and comparatively simple Si isotope systematics identify the platy SiC crystals as a genetically related family, formed around a single isotopically heterogeneous presolar star on an association of related stars. The enrichments in C-13 and the Si isotope systematics of the platy SiC are broadly consistent with theoretical models of nucleosynthesis in low-mass, carbon stars on the ASG. The Si isotope array most plausibly reflects mixing between (Si-28)-rich material, inherited from a previous generation of stars, and material enriched in Si-29 and Si-30, produced in intershell regions by neutron capture during He-burning. The absence of a correlation between the Si and C isotopic compositions of the SiC suggests either episodic condensation of SiC, extending over several thermal pulses, in the atmosphere of a single star, or the derivation of the SiC from several stars characterized by different rates of C-13 production.

Stone, J.↗

NASA NTRS1994

Interstellar detection of the intersystem line Si II lambda 2335 toward zeta Ophiuchi

We report on the detection of the weak intersystem transistion of Si II lambda 2335 A in the sight line toward zeta Oph using the Ech-B mode (3.5 km/s resolution) of the Goddard High Resolution Spectrograph. The high-quality spectrum is characterized by an empirically measured signal-to-noise of 450, in excellent agreement with that expected from photon-statistics. The measured equivalent width of the Si II line is W(sub lambda) = 0.48 +/- 0.12 mA. Using the new experimental f-value of Calamai, Smith, and Bergeson, we find a Si II column density of 2.34 (+/- 0.58) x 10(exp 15) atoms/sq cm and (Si/H)(sub zeta Oph) = 1.78 (+/- 0.44) x 10(exp -6) for the principal absorbing component(s) at v(sub sun) approx. = -15 km/s. Analysis of the Si II lambda 1808 absorption over the same velocity range using the new experimental f-value of Bergeson & Lawler yields a column density (corrected for saturation) that is consistent within the weak line errors and confirms the relative accuracies of these new f-values. Furthermore, these results indicate that accurate abundances can now be derived for Si II, particularly from the weak Si II lambda 2335 A since it is free of saturation effects. For the zeta Oph v(sub sun) approx. = -15 km/s component(s), we find that greater than 95% of the available cosmic abundance (i.e. the 1989 meteoritic abundances of Anders & Grevesse) of Mg, Fe, and Si is 'missing' from the gas phase and is presumably locked up in the dust. These elements are present in the dust grains in ratios of Fe/Si approximately equals 0.9 and Mg/Si approximately equals 1.1, consistent with the ratio of their cosmic abundances. These ratios are in sharp contrast to more diffuse clouds like those seen toward the high-latitude halo star HD 93521 where in the dust Fe/Si approximately equals 1.8 and Mg/Si approximately equals 2.1.

Cardelli, Jason A.↗

NASA NTRS2006

Direct Imaging of Stellar Surfaces: Results from the Stellar Imager (SI) Vision Mission Study

The Stellar Imager (SI) is a UV-Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and stellar interiors (via asteroseismology) and of the Universe in general. SI is identified as a "Flagship and Landmark Discovery Mission'' in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory'' in the Exploration of the Universe Division (EUD) Roadmap (May, 2005). The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes: The 0.1 mas resolution of this deep-space telescope will transform point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives in support of the Living With a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. In this paper we will discuss the results of the SI Vision Mission Study, elaborating on the science goals of the SI Mission and a mission architecture that could meet those goals.

Carpenter, Kenneth↗

NASA NTRS2008

The Stellar Imager (SI) Vision Mission and the Benefits of an Ares V Launch

The Stellar Imager (SI) is a UV/Optical, Space-Based Interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Heliophysics Roadmap and a potential implementation of the UVOI in the 2006 Science Program for NASA's Astronomy and Physics Division. In this paper we briefly discuss the science goals, technology needs, and baseline design of the SI Mission, and then describe the benefits to the mission that a launch on an Ares V, with its larger payload shroud, would produce. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

Carpenter, Kenneth F.↗

NASA NTRS2007

Direct UV/Optical Imaging of Stellar Surfaces: The Stellar Imager (SI) Vision Mission

The Stellar Imager (SI) is a UV/optical, space-based interferometer designed to enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. SI's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives, in support of the Living with a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in thc Universe. SI is a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap. We discuss herein the science goals of the SI Mission, a mission architecture that could meet those goals, and the technologies needed to enable this mission. Additional information on SI can be found at: http://hires.gsfc.nasa.gov/si/.

Carpenter, Kenneth G.↗

NASA NTRS2010

Thermal Design Considerations of the Hubble Space Telescope (HST) Science Instrument Control and Data Handler (SI C and DH-2)

Following a failure in side 1 of the HST SI C&DH in September 2008, HST Servicing Mission 4 (SM-4) was delayed so that a SI C&DH Orbital Replacement Unit (ORU) could be qualified for flight. This second generation SI C&DH (SI C&DH-2) included several enhancements which increased its thermal dissipation near critical components. In order to maintain the SI C&DH-2 within its operational temperature limits, several thermal modifications were installed prior to its final qualification testing. This paper presents the thermal modifications performed on the SI C&DH-2, as well as the thermal ground test results and a correlation of the SI C&DH-2 thermal design to flight telemetry.

Gregory, Teri H.↗

NASA NTRS2020

Effect of Pressure on the Activity Coefficients of Au and Other Siderophile Elements in Liquid Fe-Si Alloys

Light elements can alloy into the iron cores of terrestrial planetary bodies. It is estimated that the Earth’s core contains ~10% of a light element, most likely a combination of S, C, Si, and O with Si probably being the most abundant. Si dissolved into Fe metal liquids can have a significant influence on the activity coefficients of siderophile elements, and thus the partitioning behavior of those elements between the core and mantle. Many of these elements have been investigated extensively at ambient pressure, and studies up to 1 GPa are becoming more common, but few have been studied at pressures above this. The formation of the Earth’s core has been estimated to have formed at pressures between 40-60 GPa, so investigating the effect pressure has on Si’s influence on siderophile element partitioning is important for modeling core formation in the Earth and smaller planets. Pressure is well known to influence volumetric properties of metallic and silicate liquids, and oxygen fugacity (e.g., [10,11]), but less is known about its effect on activity coefficients (e.g., [12]). Some activity coefficients depend strongly upon the Si content of Fe liquids, and the concentration of siderophile elements such as P, Sb, and As in the terrestrial mantle is easily influenced by dissolved Si in the core. Thus, isolating the effect of pressure on activity coefficients in general is critical in quantitative analysis of core formation models. In this work, we investigate the effect variable Si content has on the partitioning of Au between Fe metal and silicate melt at 10 GPa and 2373 K, with the intention of comparing the behavior to that already investigated at lower pressures. In addition, P, V, Mn, Ga, Zn, Cd, Sn, W, Pb, and Nb were also measured and could thus be included in the assessment of potential pressure effects.

Righter, K.↗

NASA NTRS2020

Constraints on the Abundances of Carbon and Silicon in Mercury's Core From Experiments in the Fe‐Si‐C System

The composition of a planet’s core has important implications for the thermal and magmatic evolution of that planet. Here, we conducted carbon (C)solubility experiments on iron-silicon (Fe-Si)metal mixtures (up to 35 wt%(~52 atom%)Si) at 1 GPa and 800–1800°C to determine the carbon concentration at graphite saturation (CCGS) in metallic melt and crystalline metal with varying proportions of Fe and Si to constrain the C content of Mercury’s core. Our results, combined with those in the literature, show that composition is the major controlling factor for carbon solubility in Fe-rich metal with minimal effects from temperature and pressure. Moreover, there is a strong anti-correlation between the abundances of carbon and silicon in iron-rich metallic systems. Based on the previous estimates of <1–25 wt% Si in Mercury’s core, our results indicate that a carbon-saturated mercurian core has 0.5–6.4wt% C, with 6.4wt% C corresponding to an Si-free, Fe core and 0.5wt% C corresponding to an Fe-rich core with 25 wt% Si. The upper end of estimated FeO abundances in the mantle(up to 2.2 wt%)are consistent with a core that has <1 wt% Siand up to 6.4 wt% C, which would imply that bulk Mercury has a superchondritic Fe/Si ratio. However,the lower end of estimated FeO (≤ 0.05 wt%) support CB-chondrite like bulk compositions of Mercury with core Si abundances in the range of 5–18.5 wt% 33 and C abundances in the range of 0.8–4.0 wt%.

Kathleen E. Vander Kaaden↗

NASA NTRS2024

Mechanisms of Apatite Formation in Reactions of Yb 2-2x Gd 2x Si 2 O 7 with CMAS

Bulk β-Yb 1.9 Gd 0.1 Si 2 O 7 , β-Yb 1.6 Gd 0.4 Si 2 O 7 , and γ-Yb 1.4 Gd 0.6 Si 2 O 7 , along with baseline γ-Y 2 Si 2 O 7 and β-Yb 2 Si 2 O 7 were investigated in contact with a molten silicate to determine mechanisms of thermochemical degradation. A model 30.67CaO-8.25MgO-12.81AlO 1.5- 48.27SiO 2 silicate composition was deposited on the surfaces of the samples at a loading of ~2 mg/cm 2 . Reactions with the molten silicate resulted in the formation of a silicate apatite layer, which has been shown to reduce further molten silicate infiltration. Additions of gadolinium up to 30 mol% to Yb 2 Si 2 O 7 reduced infiltration up to ~60% compared to baseline Yb 2 Si 2 O 7 , but additional exposure time at temperature resulted in loss of the apatite layer. The results herein indicate that doping with gadolinium disilicate may not be beneficial in the long term degradation of disilicate-based EBCs by molten silicates.

Jamesa L. Stokes↗

NASA NTRS1976

Solid-state growth of Si to produce planar surfaces

Paralleling the sophisticated control of Si and GaAs growth from fluid media, we demonstrate control of Si growth using a solid growth medium. Faceted dissolution pits were first produced in a Si substrate using standard photolithographic techniques and Al metallization. Si was then evaporated onto the cold structure, depositing as amorphous material. Upon heating, the amorphous Si migrated through the solid Al and grew rapidly in the faceted pits, typically refilling them flush with the surrounding substrate. Evidence that the rapid growth occurs only while the amorphous Si is dissolving into the Al is presented.

Boatright, R. L.↗

NASA NTRS1988

Monte Carlo studies of liquid semiconductor surfaces - Si and Ge

The liquid-vapor interface of Si and Ge, and of Si doped with impurities is studied using the empirical Stillinger-Weber two- and three-body potentials. The surface tension of the pure elements is calculated by use of a direct evaluation of the free energy required to create the surface. For Si, both the surface tension and its temperature derivative are in good agreement with experiment. To within numerical accuracy, the free surfaces of both Si and Ge have a monotonically decreasing density, with a 10-90 percent surface width of about 2.2 A in both cases. When large and small model impurities are introduced into pure liquid Si, they are found in the simulations to migrate, respectively, towards the surface and away from the surface. This behavior is consistent with the interpretation that impurities with atoms larger than Si tend to lower the surface tension.

Wang, Z. Q.↗