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Results for “Resistive switching”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

A Ka-band GaAs monolithic phase shifter

The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

Sokolov, V.↗
NASA NTRS1989

Thin film memory matrix using amorphous and high resistive layers

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

Thakoor, Anilkumar P.↗
NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗
NASA NTRS1995

Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices

The optoelectronic properties of high-resistivity p-type hexagonal silicon carbide (6H-SiC) have been investigated using lateral photoconductive switches. Both photovoltaic and photoconductive effects are reported, measured at 337 nm, which is above the 6H-SiC absorption edge. These photoconductive switches have been fabricated with dark resistances of up to 1 M omega; photoconductive switching efficiencies of more than 80% have been achieved. In addition, these devices displayed a high-speed photovoltaic response to nanosecond laser excitations in the ultraviolet spectral region; in particular, the observed photovoltaic response pulse width can be shorter than the exciting laser pulse width. This subnanosecond photovoltaic response has been modeled and good qualitative agreement with experiment has been obtained.

Cho, Pak S.↗
NASA NTRS2001

Composite Material Switches

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Javadi, Hamid↗
NASA NTRS2002

Composite Material Switches

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Hamid H Javadi↗
NASA NTRS1989

Manganese oxide microswitch for electronic memory based on neural networks

A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

Ramesham, R.↗
NASA NTRSDate not supplied

Thermal Management Challenges and Technology Options for Lunar Regenerative Fuel Cells

Regenerative Fuel Cells (RFCs) enable lunar surface hardware, from pressurized rovers to surface habitats, to survive the lunar night by providing the required energy storage with a lower mass than state of the art battery systems. RFCs consist of fuel cell and electrolyzer electrochemical stack(s), a fluidic balance of plant, and electrical balance of plant. Fuel cells operate by converting the stored chemical energy of reactants into DC electrical power, heat, and water. When supplied DC power from an available external source, electrolyzers regenerate the reactants through electrolysis. The balance of plant is a critical part of the integrated system consisting of many individual components and provides fluid pressure management and conditioning, fluid storage, and thermal management. Component technology development is required to create an RFC system that will be capable of surviving the harsh lunar environment and maximize specific energy (W-hr/kg). One critical component requiring development includes a kW-scale high flux thermal switch. The primary requirement for the thermal switch is the ability to maintain low thermal resistance with the RFC heat rejection interface during the lunar day to maximize heat rejection while switching to a high thermal resistance during the lunar night such that the RFC can conserve as much thermal energy as possible. Different technology including freeze tolerant pumped loop, passive louvers, and variable conductance heat pipes were assessed as potential solutions. NASA is exploring development options through internal and external partnerships to develop this technology critical for a spaceflight RFC system.

Energy Storage↗
NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗
NASA NTRS1994

Non-volatile, solid state bistable electrical switch

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Williams, Roger M.↗
NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗
NASA NTRS1968

Semiconductor ac static power switch

Semiconductor ac static power switch has long life and high reliability, contains no moving parts, and operates satisfactorily in severe environments, including high vibration and shock conditions. Due to their resistance to shock and vibration, static switches are used where accidental switching caused by mechanical vibration or shock cannot be tolerated.

Vrancik, J.↗
NASA NTRS2013

ESD Test Apparatus for Soldering Irons

ESDA (Electrostatic Discharge Association) ESD STM 13.1-2000 requires frequent testing of the voltage leakage from the tip of a soldering iron and the resistance from the tip of the soldering iron to the common point ground. Without this test apparatus, the process is time-consuming and requires several wires, alligator clips, or test probes, as well as additional equipment. Soldering iron tips must be tested for electrostatic discharge risks frequently, and this typically takes a lot of time in setup and testing. This device enables the operator to execute the full test in one minute or less. This innovation is a simple apparatus that plugs into a digital multimeter (DMM) and the Common Point Ground (CPG) reference. It enables the user to perform two of the electrostatic discharge tests required in ESD STM 13.1-2000. The device consists of a small black box with two prongs sticking out of one end, two inputs on the opposite end (one of the inputs is used to connect the reference CPG to the DMM), and a metal tab on one side. Inside the box are wires, several washers of various materials, and assembly hardware (nuts and screws/bolts). The device is a passive electronic component that is plugged into a DMM. The operator sets the DMM to read voltage. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The voltage is read and recorded. The operator switches the DMM to read resistance. The operator places the heated tip of the soldering iron onto the metal tab with a small amount of solder to ensure a complete connection. The resistance is recorded. If the recorded voltage and resistance are below a number stated in ESDA ESD STM 13.1-2000, the test is considered to pass. The device includes all the necessary wiring internal to its body so the operator does not need to do any independent wiring, except for grounding. It uses a stack of high-thermal-resistance washers to minimize the heat transfer from the soldering iron to the wiring used to measure the resistance and voltages. This minimizes thermal error. The device allows very rapid execution of a test that is performed frequently.

Sancho, Jose↗
NASA NTRS1971

Dynamic testing of a single-degree-of-freedom strapdown gyroscope

Test methods and results are presented for the equivalent average input rate of a single-degree-of-freedom gyroscope operated both open loop and with a ternary-logic pulse-torque-to-balance loop during multiaxis angular oscillation. For the open-loop tests, good agreement was obtained with theoretical results. Two-axis testing was performed for oscillations about the Input-Output axes, the Input-Spin axes, and the Spin-Output axes. These tests run in the torque-to-balance mode revealed significant departures from open-loop results in the induced drift rate. An analysis is developed explaining much of the closed-loop data presented. Test data for the gryoscope in a ternary torque-to-balance loop with constant input rates is presented. The tests demonstrate that the instrument rate linearity does not change with interrogation frequency from 3,600 to 14,400 Hz if the torque coil is tuned to offer a resistive load to the current switch. Analysis cited shows that gyroscope lag compensation eliminates multiple pulsing and other equivalent forms of degraded resolution in a wide variety of quantizing loops. This result is test verified for the ternary delta-modulator loop.

Lory, C. B.↗
NASA NTRS1980

Detector verifier for circuit analyzers

Economical tool checks operation of automatic circuit analyzer. Each loop is addressed directly from analyzer console by switching internal analyzer bridge to resistance equal that of connecting cable plus specified limiting test value. Procedure verifies whether detected faults in circuit under test are actually due to analyzer malfunction. Standard-length universal test cables make it possible to shift detector tool from cable to cable without resistance compensation.

Pope, D. L.↗