Recovery of electrical properties in 45 Mev electron-irradiated N-type Si from 80 deg K to 350 deg K
45 MeV electron radiation effect on electrical properties and isochronal annealing behavior of N-type silicon
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45 MeV electron radiation effect on electrical properties and isochronal annealing behavior of N-type silicon
The accurate treatment of electronic effects in multi-million-atom simulations of radiation-induced collision cascades is crucial for reliable predictions of primary radiation damage. In this work, we explore the fidelity of a recently developed two-temperature molecular dynamics model implementing an electron density-dependent coupling of electronic and atomic subsystems for cascade simulations in nickel. We show that the parameter-free model realistically captures the instantaneous energy losses during all stages of the highly nonequilibrium cascade process. Our simulations predict two distinct coupling regimes, corresponding to the rapid energy losses through electronic stopping in the early stages of the cascade and to the slow equilibration through the electron-phonon coupling mechanism in the later stages, without the use of separate models or coupling terms. The intermediate stage of the cascade dynamics displays a complex energy transfer between the subsystems, which cannot be interpreted by comparison to either electronic stopping or electron-phonon coupling theories. We therefore compare the predicted atomic mixing, which is sensitive to the energy losses during the intermediate cascade stage, with experimental ion beam mixing measurements. We find good agreement with the experiments, validating the coupling model for the intermediate stage of the cascade. Predictions of final defect numbers and cluster sizes are found in line with the results from conventional electronic stopping-based methods, while significantly reducing the theoretical uncertainty in the outcomes of conventional models stemming from arbitrary choices of thresholds for different coupling terms. Our results represent a notable improvement in cascade damage predictions in nickel, providing validation of the electron density-dependent coupling model for radiation damage simulations in general. The results lead us to propose an interpretation of the electronic energy losses in the intermediate regime of velocities, where we find an effectively nonlinear dissipation.
The present conference on the effects of nuclear and space radiation on electronic hardware gives attention to topics in the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, electronic device radiation hardness assurance, SOI/SOS radiation effects, spacecraft charging and space radiation, IC radiation effects and hardening, single-event upset (SEU) phenomena and hardening, and EMP/SGEMP/IEMP phenomena. Specific treatments encompass the generation of interface states by ionizing radiation in very thin MOS oxides, the microdosimetry of meson energy deposited on 1-micron sites in Si, total dose radiation and engineering studies, plasma interactions with biased concentrator solar cells, the transient imprint memory effect in MOS memories, mechanisms leading to SEU, and the vaporization and breakdown of thin columns of water.
The Advanced Avionics and Processor Systems (AAPS) project, formerly known as the Radiation Hardened Electronics for Space Environments (RHESE) project, endeavors to develop advanced avionic and processor technologies anticipated to be used by NASA s currently evolving space exploration architectures. The AAPS project is a part of the Exploration Technology Development Program, which funds an entire suite of technologies that are aimed at enabling NASA s ability to explore beyond low earth orbit. NASA s Marshall Space Flight Center (MSFC) manages the AAPS project. AAPS uses a broad-scoped approach to developing avionic and processor systems. Investment areas include advanced electronic designs and technologies capable of providing environmental hardness, reconfigurable computing techniques, software tools for radiation effects assessment, and radiation environment modeling tools. Near-term emphasis within the multiple AAPS tasks focuses on developing prototype components using semiconductor processes and materials (such as Silicon-Germanium (SiGe)) to enhance a device s tolerance to radiation events and low temperature environments. As the SiGe technology will culminate in a delivered prototype this fiscal year, the project emphasis shifts its focus to developing low-power, high efficiency total processor hardening techniques. In addition to processor development, the project endeavors to demonstrate techniques applicable to reconfigurable computing and partially reconfigurable Field Programmable Gate Arrays (FPGAs). This capability enables avionic architectures the ability to develop FPGA-based, radiation tolerant processor boards that can serve in multiple physical locations throughout the spacecraft and perform multiple functions during the course of the mission. The individual tasks that comprise AAPS are diverse, yet united in the common endeavor to develop electronics capable of operating within the harsh environment of space. Specifically, the AAPS tasks for the Federal fiscal year of 2010 are: Silicon-Germanium (SiGe) Integrated Electronics for Extreme Environments, Modeling of Radiation Effects on Electronics, Radiation Hardened High Performance Processors (HPP), and and Reconfigurable Computing.
High energy electron radiation effect on optical transmission of transparent materials for solar cell shields
Radiation effects on materials and electronic parts constrain the lifetime of flight systems visiting Europa. Understanding mission lifetime limits is critical to the design and planning of such a mission. Therefore, the operational aspects of radiation dose are a mission success issue. To predict and manage mission lifetime in a high radiation environment, system engineers need capable tools to trade radiation design choices against system design and reliability, and science achievements. Conventional tools and approaches provided past missions with conservative designs without the ability to predict their lifetime beyond the baseline mission.This paper describes a more systematic approach to understanding spacecraft design margin, allowing better prediction of spacecraft lifetime. This is possible because of newly available electronic parts radiation effects statistics and an enhanced spacecraft system reliability methodology. This new approach can be used in conjunction with traditional approaches for mission design. This paper describes the fundamentals of the new methodology.
Electron irradiation effects of capacitor-type micrometeoroid detector
Electron radiation damage to cadmium sulfide solar cells
Emerging Electronics Technologies include: 1) Changes in the commercial semiconductor world; 2) Radiation Effects Sources (A sample test constraint); and 3) Challenges to Radiation Testing and Modeling: a) IC Attributes-Radiation Effects Implication b) Fault Isolation c) Scaled Geometry d) Speed e) Modeling Shortfall f) Knowledge Status
Accurate particle and power deposition profiles of neutral beam injection (NBI) are essential to transport studies, and that information is usually acquired through Monte Carlo simulations with a given collisional model. The deposition process of the energetic beam particles leads to the informative electron temperature (T e ) evolution trajectory, which can be captured by electron cyclotron emission (ECE) system due to its good spatial and temporal resolution. Previously, some work has been done to interpret the T e responses to the pulsed NBI as a linear heating source with Fourier-based techniques, although that approach fell short when the fast ion slowing-down time becomes significant (~100 ms). It has been observed in DIII-D that the modulated NBI pulses (10–50 Hz) reduce local core T e values ~0.1 keV through cold electron dilution in high-T e (>2 keV) plasmas alongside accumulative heating. Here, a novel approach to interpret the T e response to NBI was developed by linearizing and modeling the detailed T e evolution trajectory using coherently averaged ECE data based on the different time scales of the terms in the local power and particle balance equations. The technique does not require absolute calibrations of ECE and is independent of collisional models. The resulting beam deposition profiles show good consistency and reasonable agreement with Monte Carlo calculations based on the atomic data from the Atomic Data and Analysis Structure (ADAS). Local electron density response measured by Thomson scattering (TS) also suggests the same features when the beam pulse is large enough for that diagnostic to resolve. The remaining discrepancies are also discussed.
Thin films of four experimental poly(arylene ether)s of similar chemical structure were exposed to 1 MeV electrons while under high vacuum. The films received total exposures of 5 x 10 exp 7 and 1 x 10 exp 9 rads at a dose rate of 5 x 10 exp 7 rads/h and a pressure of 2 x 10 exp -7 torr. Films exposed to 5 x 10 exp 7 rads showed dramatic changes in molecular weight distribution. After exposures of 1 x 10 exp 9 rads the films were only partially soluble in chloroform and exhibited no detectable changes in the glass transition temperatures. Thin-film tensile properties were also altered by the exposure to electron radiation. The effect of the exposures as determined by various analyses is discussed.
This workshop covers various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics, Astrophysics, and X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics and construction techniques, and new technologies such as monolithic and 3D integrated detectors.
Effects on the internal spacecraft electronics due to exposure to the natural and enhanced space radiation environment will be reviewed. The emphasis will be placed on the description of the nature of both the exposure environment and failure mechanisms in semiconductors. Understanding both the system environment and device effects is critical in the use of laboratory simulation environments to obtain the data necessary to design and qualify components for successful application.
Perturber radiation effect on electron impact spectral line broadening
Electron, proton, and ultraviolet radiation effects on thermal control coatings
This presentation covers the basis and challenges for radiation effects in electronic systems. The three main types of radiation effects in electronics are: 1) total ionizing dose (TID), 2) total non-ionizing dose (TNID) / displacement damage dose (DDD), and 3) single-event effect (SEE). Some content on relevant examples of effects, current concerns, and possible environmental model-driven solutions are also included.
The Solar Maximum Satellite was launched on February 14, 1980. Problems with the Main Electronics Box (MEB) were experienced in the period July 10 to September 30, 1980. Failure occurred in the October to November time frame. Replacement of the Main Electronic Box (MEB) was performed in April 1984. The failed original MEB was returned to Earth and offered an opportunity to study some electronic parts which had spent 50 months in the natural radiation environment of a low Earth orbit (LEO) spacecraft. Spare parts were annealed at ambient temperatures on the ground. Dose rate effects between the flight and laboratory environments were compared.
The natural space environment is characterized by complex and subtle phenomena hostile to spacecraft. Effects of these phenomena impact spacecraft design, development, and operation. Space systems become increasingly susceptible to the space environment as use of composite materials and smaller, faster electronics increases. This trend makes an understanding of space radiation and its effects on electronic systems essential to accomplish overall mission objectives, especially in the current climate of smaller/better/cheaper faster. This primer outlines the radiation environments encountered in space, discusses regions and types of radiation, applies the information to effects that these environments have on electronic systems, addresses design guidelines and system reliability, and stresses the importance of early involvement of radiation specialists in mission planning, system design, and design review (part-by-part verification).