Verification, Validation, and Credibility Assessment of a Computational Model of the Advanced Resistive Exercise Device (ARED)
No abstract available
Werner, C. R.↗
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Computational Biomechanical Models of Squat Exercise Performed on the Advanced Resistive Exercise Device (ARED)
No abstract available
Thompson, W. K.↗
Thermal Fatigue Results for Surface Mount Devices Using Resistance Tracking and Intermittent Current Detection Electrical Test Methods
Thermal fatigue life testing of various electronic packaging technologies is being performed by the Reliability Technology Group at the Jet Propulsion Laboratory.
fatigue↗
Evaluation of Strain Measurement Devices for Inflatable Structures
Inflatable structures provide a significant volume savings for future NASA deep space missions. The complexity of these structures, however, provides difficulty for engineers in designing, analyzing, and testing. Common strain measurement systems for metallic parts cannot be used directly on fabrics. New technologies must be developed and tested to accuractly measure the strain of inflatable structures. This paper documents the testing of six candidate strain measurement devices for use on fabrics. The resistance devices tested showed significant hysteresis during creep and cyclic testing. The capacitive device, however, showed excellent results and little-to-no hysteresis. Because of this issue, only two out of the six proposed devices will continue in development. The resulting data and lessons learned from this effort provides direction for continued work to produce a structural health monitoring system for inflatable habitats.
Litteken, Douglas A.↗
Evaluation of Strain Measurement Devices for Inflatable Structures
Inflatable structures provide a significant volume savings for future NASA deep space missions. The complexity of these structures, however, provides difficulty for engineers in designing, analyzing, and testing. Common strain measurement systems for metallic parts cannot be used directly on fabrics. New technologies must be developed and tested to accurately measure the strain of inflatable structures. This paper documents the testing of six candidate strain measurement devices for use on fabrics. The resistance devices tested showed significant hysteresis during creep and cyclic testing. The capacitive device, however, showed excellent results and little-to-no hysteresis. Because of this issue, only two out of the six proposed devices will continue in development. The resulting data and lessons learned from this effort provides direction for continued work to produce a structural health monitoring system for inflatable habitats.
Litteken, Doug↗
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 C
We have reported SiC integrated circuits (IC's) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 C [1, 2]. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 C [3]. However, this thermal ramp was not ended until a peak temperature of 880 C (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology. Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 C. In one test, the temperature was ramped and then held at 727 C, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 C before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 C (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 C.
JFET↗
Experimental Durability Testing of 4H SiC JFET Integrated Circuit Technology at 727 Degrees Centigrade
We have reported SiC integrated circuits (ICs) with two levels of metal interconnect that have demonstrated prolonged operation for thousands of hours at their intended peak ambient operational temperature of 500 degrees Centigrade. However, it is recognized that testing of semiconductor microelectronics at temperatures above their designed operating envelope is vital to qualification. Towards this end, we previously reported operation of a 4H-SiC JFET IC ring oscillator on an initial fast thermal ramp test through 727 degrees Centigrade. However, this thermal ramp was not ended until a peak temperature of 880 degrees Centigrade (well beyond failure) was attained. Further experiments are necessary to better understand failure mechanisms and upper temperature limit of this extreme-temperature capable 4H-SiC IC technology.Here we report on additional experimental testing of custom-packaged 4H-SiC JFET IC devices at temperatures above 500 degrees Centigrade. In one test, the temperature was ramped and then held at 727 degrees Centigrade, and the devices were periodically measured until electrical failure was observed. A 4H-SiC JFET on this chip electrically functioned with little change for around 25 hours at 727 degrees Centigrade before rapid increases in device resistance caused failure. In a second test, devices from our next generation 4H-SiC JFET ICs were ramped up and then held at 700 degrees Centigrade (which is below the maximum deposition temperature of the dielectrics). Three ring oscillators functioned for 8 hours at this temperature before degradation. In a third experiment, an alternative die attach of gold paste and package lid was used, and logic circuit operation was demonstrated for 143.5 hours at 700 degrees Centigrade.
Silicon Carbide↗
Solid-state thin-film memistor for electronic neural networks
This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.
Thakoor, S.↗
Challenges, Considerations, and Opportunities for Exercise and Medical Accommodation Inside a Small Pressurized Rover
Pressurized Rovers (PR) can enable crew to explore away from a lander or surface habitat at distances not possible on foot or even in unpressurized rovers. Sustaining crew for multiple days, they can rove for weeks, independent of other surface elements. Because these are essentially mobile habitats, it is critical that they provide sufficient volume to accommodate the exercise and medical systems to maintain human health in remote, low gravity environments such as the Moon and Mars. This is an area of extensive unknowns as requirements have not yet been developed for exercise or medical systems in pressurized rovers. Yet they must be considered in vehicle sizing studies as they are significant volume drivers, requiring allocation for stowed and deployed hardware inside the rover cabin. Previously flown spacecraft have allocated varying amounts of volume based on the expected crew mission and the state of the art in these systems. NASA-STD-3001 provides high-level requirements for standards of medical care and exercise capabilities. Crew injuries are possible both inside the cabin and on extravehicular activities (EVA), therefore requiring medical capability. Exercise countermeasures are needed to counteract the debilitating effects of lowered gravity. This may include both reconditioning following a lengthy microgravity transit as well as ongoing countermeasures against the effect of low surface gravity. The NASA reference concept for the PR dates back to the Constellation Program and prototypes have been extensively tested in NASA’s Desert Research and Technology Studies (DRATS) program as well as at the NASA Johnson Space Center. The PR cabin is designed to accommodate two crewmembers and is subdivided into a forward cockpit area and a main body for crew habitation. EVAs are accomplished by transitioning through suit ports in the aft bulkhead into spacesuits. While no exercise devices have been developed for the PR, some have been prototyped and demonstrated in DRATS analog missions. A cycle ergometer performed reasonably well in DRATS testing as an aerobic exercise device and recent analysis work has theorized that a combination aerobic and resistive device could be packaged into a form factor similar to the DRATS ergometer. It is therefore suitable for use as an initial volumetric placeholder. No sensorimotor devices have been considered for the PR to aid in adaptation to surface gravity. However, there are commercially available treadmills that at minimum represent examples of the type of exercise system that could potentially be used for such a purpose. A combination of field test data, analysis, and CAD modeling will be used to perform a first pass assessment of whether these exercise devices can be stowed and deployed within the PR. Medical inventories from the International Space Station will be used as a volume placeholder for the PR medical system. A configuration will be discussed for medical deployment, including positioning of caregiver, patient, and medical equipment / supplies.
Pressurized Rover↗
Progress in kinetic inductance thermometers for X-ray calorimeters
Conventional X-ray microcalorimeters have so far used ionimplanted resistors for thermometers. Recently, however, several new methods for sensing small temperature changes have been suggested that are nondissipative. Such devices may have intrinsically better energy resolution by eliminating the Johnson noise present in resistive devices. The use of kinetic inductance thermometers for X-ray microcalorimeters is being investigated. This technique exploits the strong temperature dependence of magnetic penetration depth of thin superconducting films. The prototype system, designed for operation at 1.5 K, uses films of aluminum and tin. Once the expected temperature sensitivity and alpha particle detection have been demonstrated, aluminum will be replaced with titanium or another material with a suitable critical temperature and the device will be operated at 0.3 K. At this temperature, the energy resolution from thermal noise should be sufficiently good to allow X-ray detection.
Rawley, G. L.↗
'Atomistic' Simulation of Decanano Devices
When the devices are scaled to decanano dimensions the discreteness of charge and matter introduces significant 'intrinsic' parameter fluctuations. Atomic level 3D process and device modelling on statistical scale is required to understand the effects, the scale of the fluctuations and to design fluctuation resistant devices.
Asenov, Asen↗
Tantalum hot-electron bolometers for low-noise heterodyne receivers
We describe superconducting diffusion-cooled hot-electron bolometers that were fabricated fromtantalum films grown on a thin niobium seed layer. The seed layer promotes single-phase growth of the Ta films, resulting in high-quality bolometers with transition temperatures up to 2.35 K and transition widths of less than 0.2 K. An S-parameter measurement set-up in a He-3 cryostat was used to measure device impedance versus frequency of a 400 nm long device at a temperature of 400 mK. It is shown that a 3 dB roll-off frequency of about 1 GHz can be achieved when the device resistance matches the impedance of the embedding network (no electrothermal feedback). This would lead to a prediction of 16 GHz for a 100 nm device, and indicates that a heterodyne mixer using a Ta HEB should be able to operate at several GHz even with a significant amount of electrothermal feedback.
bolometer superconductor tantalum↗
Grid oscillators
Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state oscillators in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not require an external locking signal, and the combining is done in free space. In addition, the loaded grid is a planar structure amenable to monolithic integration. Measurements on a 25-MESFET grid at 9.7 GHz show power-combining and frequency-locking without an external locking signal, with an ERP of 37 W. Experimental far-field patterns agree with theoretical results obtained using reciprocity.
Popovic, Zorana B.↗
Random Dopant Induced Threshold Voltage Lowering and Fluctuations in Sub 50 nm MOSFETs: a Statistical 3D 'Atomistic' Simulation Study
A 3D 'atomistic' simulation study of random dopant induced threshold voltage fluctuations and lowering in sub 50 nm MOSFETs is presented. The attention is focused mainly on devices with 30 nm effective channel length which represent the expected level of scaling at the end of the Silicon Roadmap. An efficient algorithm, based on a single 3D ap solution of the Poisson equation and a simplified current continuity equation, is used in the simulations. Large samples of microscopically different devices (typically 200) arc used in order to obtain statistically reliable results. The influence of different aspects of the conventional MOSFET design on the threshold voltage fluctuations and lowering are investigated. Results for fluctuation resistant device architectures based on low-doped epitaxial channel MOSFETs are also presented.
Asenov, Asen↗
Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor
A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.
Pinto, N. J.↗
Silicon Detectors For Helium Liquid And Vapor
Simple electrical-resistance devices made of silicon indicate whether helium liquid or helium vapor present. Devices designed primarily for use in outer space, were tested and found to operate in normal Earth gravity. Silicon cubes supported by stainless-steel wires and strips. Voltage across each cube at fixed current indicates whether immersed in helium liquid or vapor. Liquid cools more than vapor does, resulting in greater electrical resistance. Such helium-liquid/vapor detectors incorporated into ducts or containers of laboratory equipment, and used to infer locations of liquid/vapor interfaces in order to measure quantities of liquid and vapor or to control refill operations.
Di Pirro, M. J.↗
Effect of wall edge suction on the performance of a short annular dump diffuser with exit passage flow resistance
The effect of wall edge suction on the performance of a short annular dump diffuser having a perforated plate flow resistance device in the exit passage was evaluated. Testing was conducted with air at near ambient pressure and temperature at inlet Mach numbers of 0.18 and 0.27 with suction rates up to 13.5 percent. Results show that pressure recovery downstream of the perforated plate was improved significantly by suction. Optimum performance was obtained with the flow resistance plate located at one inlet passage height downstream of the dump plane.
Juhasz, A. J.↗
Advanced high temperature static strain sensor development
An examination was made into various techniques to be used to measure static strain in gas turbine liners at temperatures up to 1150 K (1600 F). The methods evaluated included thin film and wire resistive devices, optical fibers, surface acoustic waves, the laser speckle technique with a heterodyne readout, optical surface image and reflective approaches and capacitive devices. A preliminary experimental program to develop a thin film capacitive device was dropped because calculations showed that it would be too sensitive to thermal gradients. In a final evaluation program, the laser speckle technique appeared to work well up to 1150 K when it was used through a relatively stagnant air path. The surface guided acoustic wave approach appeared to be interesting but to require too much development effort for the funds available. Efforts to develop a FeCrAl resistive strain gage system were only partially successful and this part of the effort was finally reduced to a characterization study of the properties of the 25 micron diameter FeCrAl (Kanthal A-1) wire. It was concluded that this particular alloy was not suitable for use as the resistive element in a strain gage above about 1000 K.
Hulse, C. O.↗