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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Determining the crystalline degree of silicon nanoclusters/SiO{sub 2} multilayers by Raman scattering

We use Raman scattering to investigate the size distribution, built-in strains and the crystalline degree of Si-nanoclusters (Si-nc) in high-quality Si-rich oxynitride/SiO{sub 2} multilayered samples obtained by plasma enhanced chemical vapor deposition and subsequent annealing at 1150 °C. An initial structural characterization of the samples was performed by means of energy-filtered transmission electron microscopy (EFTEM) and X-ray diffraction (XRD) to obtain information about the cluster size and the presence of significant amounts of crystalline phase. The contributions to the Raman spectra from crystalline and amorphous Si were analyzed by using a phonon confinement model that includes the Si-nc size distribution, the influence of the matrix compressive stress on the clusters, and the presence of amorphous Si domains. Our lineshape analysis confirms the existence of silicon precipitates in crystalline state, in good agreement with XRD results, and provides also information about the presence of a large compressive stress over the Si-nc induced by the SiO{sub 2} matrix. By using the Raman spectra from low temperature annealed samples (i.e., before the crystallization of the Si-nc), the relative scattering cross-section between crystalline and amorphous Si was evaluated as a function of the crystalline Si size. Taking into account this parameter and the integrated intensities for each phase as extracted from the Raman spectra, we were able to evaluate the degree of crystallization of the precipitated Si-nc. Our data suggest that all samples exhibit high crystalline fractions, with values up to 89% for the biggest Si-nc. The Raman study, supported by the EFTEM characterization, indicates that this system undergoes a practically abrupt phase separation, in which the precipitated Si-nanoclusters are formed by a crystalline inner part surrounded by a thin amorphous shell of approximately 1–2 atomic layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Physical properties and applications of In{sub x}Ga{sub 1−x}N nanowires

We have successfully grown In{sub x}Ga{sub 1−x}N nanowires by plasma-assisted molecular beam epitaxy on silicon substrates. The alloy composition and crystal quality have been analyzed by Raman scattering, photoluminescence spectroscopy and x-ray fluorescence nanoprobe techniques. In{sub x}Ga{sub 1−x}N is an one-mode alloy, where the different optical modes have an intermediate frequency of that of pure InN and GaN. The sample composition can be derived from the Raman data. On the other hand, by using the optical gap provided by the emission spectra, we conclude that the samples have a lower Ga content than that provided by the Raman analysis. X-ray fluorescence maps and photoluminescence measured in single nanowires help to explain this contradictory result.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

High-pressure study of isoviolanthrone by Raman spectroscopy

Vibrational properties of isoviolanthrone are investigated by Raman scattering at pressures up to 30.5 GPa and room temperature. A complete characterization of phonon spectra under pressure is given for this material. The onset of a phase transition at 11.0 GPa and the formation of a new phase above 13.8 GPa are identified from both the frequency shifts and the changes in the full width half maxima of the intra- and internal modes. The transition is proposed to result from the changes of intra- and intermolecular bonding. The tendencies of the intensity ratios with pressure are in good agreement with the pressure dependence of the resistance at room temperature, indicating that the phase transition may be an electronic origin. The absence of the changes in the lattice modes indicates that the observed phase transition is probably a result of the structural distortions or reorganizations. The reversible character of the transition upon compression and decompression is determined in the entire pressure region studied.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Pressure induced spin transition revealed by iron M{sub 2,3}-edge spectroscopy

We present a method to characterize pressure induced magnetic high to low spin transition in iron sulphide using x-ray Raman scattering spectroscopy at the iron M{sub 2,3}-edge. The advantage of this method is that the observed spectral changes between pressures of 1.7 GPa and 10.1 GPa can be used with the help of atomic multiplet calculations to determine the crystal field splitting parameters associated with the spin transition. We discuss the potential of this M{sub 2,3}-edge spectroscopy to investigate the irons electronic spin state in-situ at the conditions of the inner Earth, i.e., at high temperature and high pressure, providing exciting opportunities for geophysical and materials science applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-pressure behavior of amorphous selenium from ultrasonic measurements and Raman spectroscopy

The high-pressure behavior of melt-quenched amorphous selenium (a-Se) has been investigated via ultrasonic measurements and Raman scattering at room temperature. The ultrasonic measurements were conducted on a-Se in a multi-anvil apparatus with two different sample assemblies at pressures of up to 4.5 and 4.8 GPa. We discovered that similar kinks occur in the slopes of the pressure dependence characteristics of the travel time and the sound velocity in both shear and longitudinal waves in the 2.0–2.5 GPa range. These kinks are independent of the sample assemblies, indicating an intrinsic transformation of the a-Se. Additionally, we deduced the pressure-volume relationship of a-Se from the sound velocity characteristics using the Birch–Murnaghan equation of state, and the results agreed well with those of previous reports. In situ high-pressure Raman scattering measurements of a-Se were conducted in a diamond anvil cell with an 830 nm excitation line up to a pressure of 4.3 GPa. We found that the characteristic band of a-Se at ∼250 cm{sup −1} experienced a smooth shift to a lower frequency with pressure, but a sharp slope change in the band intensity versus pressure occurred near 2.5 GPa. The results of X-ray diffraction and differential scanning calorimetry measurements indicate that the samples remain in their amorphous states after decompression. Thus, we proposed that the abnormal compression behavior of a-Se in the 2.0–2.5 GPa range can be attributed to pressure-induced local atomic reconfiguration, implying an amorphous-amorphous transition of the elementary selenium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Highly constrained ferroelectric [BaTiO{sub 3}]{sub (1−x)Λ}/[BaZrO{sub 3}]{sub xΛ} superlattices: X-ray diffraction and Raman spectroscopy

We report an x-ray diffraction (XRD) and a Raman-scattering investigation of ferroelectric/paraelectric superlattices [BaTiO{sub 3}] {sub (1−x)Λ}/[BaZrO{sub 3}]{sub xΛ} for which the composition varied, 0.15 ≤ x ≤ 0.85, while the superlattice (SL) modulation period Λ was kept constant at about 100 Å. The samples were epitaxially grown by pulsed laser deposition on MgO substrates buffered with La{sub 0.5}Sr{sub 0.5}CoO{sub 3}. Based on the XRD analysis and on polarized Raman spectra, we have showed that the large strain in SLs induced ferroelectricity in BaZrO{sub 3} (BZ) for all SLs, a material that is paraelectric in the bulk form at any temperature and in the single film. The induced polar axis in BZ layers is perpendicular to the plane of substrate while BaTiO{sub 3} (BT) layers exhibit in-plane polar orientation. Raman spectroscopy revealed a lattice ordering in SLs due to the misfit strain generated by the large lattice mismatch between the alternating BZ and BT layers. This strain induced a huge upward frequency of the lowest E(1TO) soft mode from 60 cm{sup −1} in the BT single film to 215 cm{sup −1} in the SL with x = 0.85. These results show that in spite of relatively large periodicity of SLs, they are highly constrained and the variation of BZ ratio allowed modifying strains between layers. The temperature dependence of the Raman spectra for BT{sub 0.3Λ}/BZ{sub 0.7Λ} and BT{sub 0.7Λ}/BZ{sub 0.3Λ} samples revealed giant shift of the ferroelectric phase transition. The phase transition temperature was found to be upshifted by about 300 °C with respect to BT single crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Polarized micro Raman scattering spectroscopy for curved edges of epitaxial graphene

This letter performed polarized microscopic laser Raman scattering spectroscopy on the curved edges of transferred epitaxial graphene on SiO{sub 2}/Si. The intensity ratio between the parallel and perpendicular polarized D band is evolved, providing a spectroscopy-based technique to probe the atomic-scale edge structures in graphene. A detailed analysis procedure for non-ideal disordered curved edges of graphene is developed combining the atomic-scale zigzag and armchair edge structures along with some point defects. These results could provide valuable information of the realistic edges of graphene at the atomic-scale that can strongly influence the performance of graphene-based nanodevices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Raman scattering investigation of large positive magnetoresistance material WTe{sub 2}

We have performed polarized Raman scattering measurements on WTe{sub 2}, for which an extremely large positive magnetoresistance has been reported recently. We observe 5 A{sub 1} phonon modes and 2 A{sub 2} phonon modes out of 33 Raman active modes, with frequencies in good accordance with first-principles calculations. The angular dependence of the intensity of the peaks observed is consistent with the Raman tensors of the C{sub 2v} point group symmetry attributed to WTe{sub 2}. Although the phonon spectra suggest neither strong electron-phonon nor spin-phonon coupling, the intensity of the A{sub 1} phonon mode at 160.6 cm{sup −1} shows an unconventional decrease with temperature decreasing, for which the origin remains unclear.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Global and local structural variations near the antiferroelectric regime in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}

Rietveld refinement of neutron and x-ray diffraction data of Na{sub 0.5}Bi{sub 0.5}TiO{sub 3} shows R3c phase stabilization at room temperature. The intermediate antiferroelectric region between 180°C to 280°C exhibits phase coexistence i.e R3c + Pnma, along with decrease in octahedral tilt angle and increase in unit cell volume. The local structural changes observed from Raman scattering in the A-O, Ti-O and TiO{sub 6} phonon modes favor the global structural variation. A possible antiparallel cation displacement due to Pnma phase formation leads to the origin of antiferroelectric ordering in Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Collision-induced Raman scattering by rare-gas atoms: The isotropic spectrum of Ne–Ne and its mean polarizability

We report the room-temperature isotropic collision-induced light scattering spectrum of Ne–Ne over a wide interval of Raman shifts, and we compare it with the only available experimental spectrum for that system as well as with spectra calculated quantum-mechanically with the employ of advanced ab initio-computed data for the incremental mean polarizability. The spectral range previously limited to 170 cm{sup −1} is now extended to 485 cm{sup −1} allowing us to successfully solve the inverse-scattering problem toward an analytic model for the mean polarizability that perfectly matches our measurements. We also report the depolarization ratio of the scattering process, lingering over the usefulness of this property for more stringent checks between the various polarizability models.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

The disorder-induced Raman scattering in Au/MoS{sub 2} heterostructures

The Raman scattering has been studied in heterostructures composed of a thin MoS{sub 2} flake and a 1-1.5 nm layer of thermally evaporated gold (Au). There have been Au nanoislands detected in the heterostructure. It has been found that their surface density and the average size depend on the MoS{sub 2} thickness. The Raman scattering spectrum in the heterostructure with a few monolayer MoS{sub 2} only weakly depends on the excitation (resonant vs. non-resonant) mode. The overall Raman spectrum corresponds to the total density of phonon states, which is characteristic for disordered systems. The disorder in the MoS{sub 2} layer is related to the mechanical strain induced in the MoS{sub 2} layer by the Au nanoislands. The strain results in the localization of phonon modes, which leads to the relaxation of the momentum conservation rule in the scattering process. The relaxation allows phonons from the whole MoS{sub 2} Brillouin zone to interact with electronic excitations. Our results show that the Au nanoislands resulted from thermal evaporation of a thin metal layer introduce substantial disorder into the crystalline structure of the thin MoS{sub 2} layers.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Selective deposition of a crystalline Si film by a chemical sputtering process in a high pressure hydrogen plasma

The selective deposition of Si films was demonstrated using a chemical sputtering process induced by a high pressure hydrogen plasma at 52.6 kPa (400 Torr). In this chemical sputtering process, the initial deposition rate (R{sub d}) is dependent upon the substrate type. At the initial stage of Si film formation, R{sub d} on glass substrates increased with elapsed time and reached to a constant value. In contrast, R{sub d} on Si substrates remained constant during the deposition. The selective deposition of Si films can be achieved by adjusting the substrate temperature (T{sub sub}) and hydrogen concentration (C{sub H2}) in the process atmosphere. For any given deposition time, it was found that an optimum C{sub H2} exists for a given T{sub sub} to realize the selective deposition of a Si film, and the optimum T{sub sub} value tends to increase with decreasing C{sub H2}. According to electron diffraction patterns obtained from the samples, the selectively prepared Si films showed epitaxial-like growth, although the Si films contained many defects. It was revealed by Raman scattering spectroscopy that some of the defects in the Si films were platelet defects induced by excess hydrogen incorporated during Si film formation. Raman spectrum also suggested that Si related radicals (SiH{sub 2}, SiH, Si) with high reactivity contribute to the Si film formation. Simple model was derived as the guideline for achieving the selective growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Influence of piezoelectric strain on the Raman spectra of BiFeO 3 films deposited on PMN-PT substrates

In this study, BiFeO 3 epitaxial thin films were deposited on piezoelectric 0.72Pb(Mg 1/3 Nb 2/3 )O 3 -0.28PbTiO 3 (PMN-PT) substrates with a conductive buffer layer (La 0.7 Sr 0.3 MnO 3 or SrRuO 3 ) using pulsed laser deposition. The calibration of the strain values induced by the electric field applied on the piezoelectric PMN-PT substrates was realised using X-Ray diffraction measurements. The method of piezoelectrically induced strain allows to obtain a quantitative correlation between strain and the shift of the Raman-active phonons, ruling out the influence of extrinsic factors, such as growth conditions, crystalline quality of substrates, or film thickness. Using the Poisson number for BiFeO 3 one can determine the volume change induced by strain, and therefore the Gr neisen parameters for specific phonon modes.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhancement of Raman scattering signal of a few molecules using photonic nanojet mediated SERS technique

Now a days, single molecule surface enhanced Raman spectroscopy (SMSERS) has become a fascinating tool for studying the structural properties, static and dynamic events of single molecules (instead of ensemble average), with the help of efficient plasmonic nanostructures. This is extremely useful in the field of proteomics because the structural properties of protein molecules are heterogeneous. Even though, SMSERS provides wealthy information about single molecules, it demands high quality surface enhanced Raman scattering (SERS) substrates. So far, a very few researchers succeeded in demonstrating the single molecule Raman scattering using conventional SERS technique. However, the experimental S/N of the Raman signal has been found to be very poor. Recently, with the help of photonic nanojet of an optical microsphere, we were able to enhance the SERS signal of a few molecules adsorbed on the SERS substrates (gold symmetric and asymmetric nanodimers and trimers dispersed on a glass slide). Herein, we report a few details about photonic nanojet mediated SERS technique, a few experimental results and a detailed theoretical study on symmetric and asymmetric nanosphere dimers to understand the dependence of localised surface plasmon resonance (LSPR) wavelength of a nanodimer on the nanogap size and polarization of the excitation light.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Surface enhanced Raman spectroscopic studies on aspirin : An experimental and theoretical approach

Surface enhanced Raman scattering (SERS) studies on aspirin molecule adsorbed on silver nanoparticles (AgNPs) were investigated by experimental and density functional theory approach. The AgNPs were synthesized by the solution-combustion method and characterized by the X-ray diffraction and high resolution-transmission electron microscopy techniques. The averaged particle size of synthesized AgNPs was calculated as ∼55 nm. The normal Raman spectrum (nRs) and SERS spectrum of the aspirin were recorded. The molecular structure of the aspirin and aspirin adsorbed on silver cluster were optimized by the DFT/ B3PW91 method with LanL2DZ basis set. The vibrational frequencies were calculated and assigned on the basis of potential energy distribution calculation. The calculated nRs and SERS frequencies were correlated well with the observed frequencies. The flat-on orientation was predicted from the nRs and SERS spectra, when the aspirin adsorbed on the AgNPs. Hence, the present studies lead to the understanding of adsorption process of aspirin on the AgNPs, which paves the way for biomedical applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Enhanced luminescence in Mg{sup 2+} codoped CaTiO{sub 3}:Eu{sup 3+} phosphor prepared by solid state reaction

CaTiO{sub 3} phosphors doped with Eu{sup 3+} and codoped with Mg{sup 2+} were prepared by Solid State Reaction method. The powders were characterized by X-ray diffraction, SEM with EDS, Raman scattering, and photoluminescence spectroscopy. The Crystalline phase and vibrational modes of the phosphors were studied using XRD pattern and Raman Spectrum respectively. The morphological studies of the phosphor samples were carried out using SEM analysis. From PL spectra we have observed two prominent red emission peaks around at 595 nm ({sup 5}D{sub 0}→{sup 7}F{sub 1}), 619 nm ({sup 5}D{sub 0}→{sup 7}F{sub 2}) with the excitation of 399 nm for Eu{sup 3+} doped CaTiO{sub 3} powders. The PL intensity of CaTiO{sub 3}:Eu{sup 3+} phosphor is enhanced significantly on codoping with Mg{sup 2+}. The observed enhanced emissions are due to energy transfer from Mg{sup 2+} to Eu{sup 3+}, which is due to radiative recombination. Eu{sup 3+} doped phosphors are well known to be promising materials for electroluminescent devices, optical amplifiers, and lasers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Stimulated Raman scattering of laser dye mixtures dissolved in multiple scattering media

Stimulated Raman scattering (SRS) of a mixture of rhodamine 6G and pyrromethene 605 laser dyes in vesicular films is studied. It is shown that a peculiar interaction of dyes occurs under conditions of multiple scattering of light from vesicles. This interaction manifests itself as SRS excitation of one of the dyes by random lasing of the other dye, provided that the random lasing spectrum overlaps the Stokes lines of the first dye. In addition, there is energy transfer between molecules of these dyes if their luminescence and absorption spectra overlap. The results obtained confirm that the mechanism of SRS from laser dyes in multiple scattering media is similar to that in coherent-active Raman spectroscopy. These results extend the possibility of determining the vibrational spectrum of dye molecules from their secondary radiation in these media. (nonlinear optical phenomena)

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

High-Temperature Raman Scattering Study of the Li{sub 2}O–B{sub 2}O{sub 3}–MoO{sub 3} System: I. Detailed Comparison of the Structures of Molten Lithium and Potassium Molybdates

The structure and polymerization behavior of molybdenum–oxygen groups in molten lithium and potassium molybdates with different alkali-metal oxide to molybdenum oxide ratios have been studied by high-temperature Raman spectroscopy. The results are analyzed in comparison with the structural units of pure molybdenum oxide.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗