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This paper reports heavy ion and proton-induced single event effect (SEE) results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.
We present the results of SEE testing with high energy protons and with low and high energy heavy ions. This paper summarizes test results for components considered for Low Earth Orbit and Deep Space applications.
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX2 System on Chip (SOC). Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
Single-Event Effects (SEE) testing was conducted on the nVidia Jetson TX1 System on Chip (SOC); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on October 16th, 2016 using 200MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
We compute nuclear response functions by solving the time-dependent 𝐴-body Schrödinger equation, recording the time-dependent transition moment and extracting spectral information via Fourier transforms. The solution of the time-dependent many-body problem accounts for correlations on top of the mean field by taking advantage of a time-dependent formulation of coupled-cluster theory. As a validation, we focus on electric dipole transitions in 4 He and 16 O and compare moments of the response function distribution to the results of an equivalent static framework, finding negligible discrepancies. We investigate how proton and neutron densities evolve in time, and we see the traditional picture of soft and giant dipole resonances as collective oscillations of protons and neutrons emerging from our calculations in 16 O and 24 O. Furthermore, this method also allows us to investigate the behavior of the nucleus in the presence of a strong electric field. In that regime, the behavior of the system becomes chaotic. Qualitatively, the spectral information obtained in this limit is in line with previous time-dependent mean-field results.
Single-Event Effects (SEE) testing was conducted on the nVidia GTX 1050 Graphics Processor Unit (GPU); herein referred to as device under test (DUT). Testing was conducted at Massachusetts General Hospitals (MGH) Francis H. Burr Proton Therapy Center on April 9th, 2017 using 200-MeV protons. This testing trip was purposed to provide a baseline assessment of the radiation susceptibility of the DUT as no previous testing had been conducted on this component.
The purpose of this test is to assess the single event effects (SEE) and radiation susceptibility of the Intel Optane Memory device (SSD) containing the 3D Xpoint phase change memory (PCM) technology. This test is supported by the NASA Electronics Parts and Packaging Program (NEPP).
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
Single event effects (SEE) are those errors, anomalies, or failures in microelectronic devices caused by the passage of a single energetic charged particle through the device. Spacecraft SEE environments consist primarily of energetic charged particles; both primary particles originating in the natural environment and secondary particles (including secondary neutrons) produced by nuclear reactions of primary particles with spacecraft materials. The energetic charged particle components (electrons, protons, and atomic nuclei) of the spacecraft SEE environment include galactic cosmic rays (GCR), and planetary radiation belt charged particles, as well as solar energetic particle event (SPE) charged particles. The International Space Station (ISS) orbital altitude and inclination (~350 km to ~420 km at 51.6o inclination) results in a spacecraft SEE environment that varies dramatically with the location in Earth?s geomagnetic field. Geomagnetic GCR shielding diminishes with distance from the geomagnetic equator. Near + 51.6o latitude the ISS GCR environment has a high degree of similarity to the interplanetary GCR environment in cis-Lunar space.SEE environments supporting ISS avionics systems design, development, test, and verification are documented in SSP-30512, Space Station Ionizing Radiation Design Environment. Comparisons of overall ISS avionics systems in-flight performance with pre-flight verification report predictions have been previously reported and meet or exceed expectations in all cases.In this paper we report the results of more detailed investigations of the effects of geographic location, altitude, solar cycle, and shielding mass effects on the in-flight SEE performance of the ISS command and data handling system during the past 17 years. In addition, we report on the preflight testing and in-flight performance of the commercial-off-the-shelf lap top computers used on ISS. Finally, we present an assessment of ISS as an avionics SEE test and flight demonstration platform for exploration hardware destined for the cis-lunar or other inner solar system environments.
This presentation will document the current state of high energy (>200 MeV) proton access in the U.S. for Single Event Effects (SEE) testing. This is continuation of efforts since the shutdown of the Indiana University Cyclotron Facility (IUCF).
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 1200 microprocessor. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
We evaluated the heavy ion and proton-induced single-event effects (SEE) for a 3D NAND flash. The 3D NAND showed similar single-event upset (SEU) sensitivity to a planar NAND of similar density and performance in the multiple-cell level (MLC) storage mode. However, the single-level-cell (SLC) storage mode of the 3D NAND showed significantly reduced SEU susceptibility. Additionally, the 3D NAND showed less MBU susceptibility than the planar NAND, with reduced number of upset bits per byte and reduced cross sections overall. However, the 3D architecture exhibited angular sensitivities for both base and face angles, reflecting the anisotropic nature of the SEU vulnerability in space. Furthermore, the SEU cross section decreased with increasing fluence for both the 3D NAND and the latest generation planar NAND, indicating a variable upset rate for a space mission. These unique characteristics introduce complexity to traditional ground irradiation test procedures.
Single-Event Effects (SEE) testing was previously conducted on the AMD v1200 System on Chip (SoC) at Massachusetts General Hospital’s (MGH) Francis H. Burr Proton Therapy Center on May 28, 2022, using 200-MeV protons.
The Single Event Effect (SEE) responses of two FireWire serial buses based on the IEEE 1394 standard were tested with heavy ions and protons. A unique approach to testing and categorizing the SEEs is presented.
Single-Event Effects (SEE) testing was conducted on the AMD Ryzen 3 2200G microprocessor with integrated graphics. Testing was conducted at Massachusetts General Hospital's (MGH) Francis H. Burr Proton Therapy Center on June 2nd, 2019.
Earlier P2020 SEE data are compared and expanded to a recent die revision, significantly increasing samples tested by protons by five devices, and by heavy ions by five devices. Earlier tested SEE types are found to be fairly similar in register, L1 cache, L2 cache, and CPU crashes. New test methods give SEE performance for the flash memory controller, watchdog circuit, and a built-in Ethernet port on the P2020 processor. Results from heavy ion and proton tests are presented, with data separated over a large number of specific error types and test programs.