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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Precise Measurement of Deuteron Tensor Analyzing Powers with BLAST

We report a precision measurement of the deuteron tensor analyzing powers T{sub 20} and T{sub 21} at the MIT-Bates Linear Accelerator Center. Data were collected simultaneously over a momentum transfer range Q=2.15-4.50 fm{sup -1} with the Bates Large Acceptance Spectrometer Toroid using a highly polarized deuterium internal gas target. The data are in excellent agreement with calculations in a framework of effective field theory. The deuteron charge monopole and quadrupole form factors G{sub C} and G{sub Q} were separated with improved precision, and the location of the first node of G{sub C} was confirmed at Q=4.19{+-}0.05 fm{sup -1}. The new data provide a strong constraint on theoretical models in a momentum transfer range covering the minimum of T{sub 20} and the first node of G{sub C}.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Precise measurement of the CP violation parameter sin 2Φ 1 in B 0 → (c$\bar{c}$)K 0 decays

We present a precise measurement of the CP violation parameter sin2$\phi$ 1 and the direct CP violation parameter $A$ f using the final data sample of 772×10 6 $B\overline{B}$ pairs collected at the Υ(4S) resonance with the Belle detector at the KEKB asymmetric-energy e + e - collider. One neutral B meson is reconstructed in a J/ψK$0\atop{S}$, ψ(2S)K$0\atop{S}$, χc1K$0\atop{S}$, or J/ψK$0\atop{L}$ CP eigenstate and its flavor is identified from the decay products of the accompanying B meson. From the distribution of proper-time intervals between the two B decays, we obtain the following CP violation parameters: sin2 $\phi$ 1 =0.667±0.023(stat)±0.012(syst) and $A$ f =0.006±0.016(stat)±0.012(syst).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Precision Measurement of Charged Pion and Kaon Differential Cross Sections in e + e - Annihilation at s = 10.52 GeV

Measurements of inclusive differential cross sections for charged pion and kaon production in e + e - annihilation have been carried out at a center-of-mass energy of s = 10.52 GeV . The measurements were performed with the Belle detector at the KEKB e + e - collider using a data sample containing 113 × 10 6 e + e - → q q ¯ events, where q = { u , d , s , c } . We present charge-integrated differential cross sections d σ h ± / d z for h ± = { π ± , K ± } as a function of the relative hadron energy z = 2 E h / s from 0.2 to 0.98. The combined statistical and systematic uncertainties for π ± ( K ± ) are 4% (4%) at z ~ 0.6 and 15% (24%) at z ~ 0.9 . The cross sections are the first measurements of the z dependence of pion and kaon production for z > 0.7 as well as the first precision cross section measurements at a center-of-mass energy far below the Z 0 resonance used by the experiments at LEP and SLC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2018

High-Precision Mass Measurement of Cu 56 and the Redirection of the r p -Process Flow

We report the mass measurement of 56 Cu, using the LEBIT 9.4 T Penning trap mass spectrometer at the National Superconducting Cyclotron Laboratory at Michigan State University. The mass of 56 Cu is critical for constraining the reaction rates of the 55 Ni(p,y), 56 Cu(p,y), 57 Zn(β + ) 57 Cu bypass around the 56 Ni waiting point. Previous recommended mass excess values have disagreed by several hundred keV. Our new value, ME = -38626.7(7.1) keV, is a factor of 30 more precise than the extrapolated value suggested in the 2012 atomic mass evaluation [Chin. Phys. C 36, 1603 (2012)], and more than a factor of 12 more precise than values calculated using local mass extrapolations, while agreeing with the newest 2016 atomic mass evaluation value [Chin. Phys. C 41, 030003 (2017)]. The new experimental average, using our new mass and the value from AME2016, is used to calculate the astrophysical 55 Ni(p,y) and 56 Cu(p,y) forward and reverse rates and perform reaction network calculations of the rp process. These show that the rp-process flow redirects around the 56 Ni waiting point through the 55 Ni(p,y) route, allowing it to proceed to higher masses more quickly and resulting in a reduction in ashes around this waiting point and an enhancement to higher mass ashes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2017

Precise predictions for $V+$jets dark matter backgrounds

High-energy jets recoiling against missing transverse energy (MET) are powerful probes of dark matter at the LHC. Searches based on large MET signatures require a precise control of the $Z(\nu\bar\nu)+$jet background in the signal region. This can be achieved by taking accurate data in control regions dominated by $Z(\ell^+\ell^-)+$jet, $W(\ell\nu)+$jet and $\gamma+$jet production, and extrapolating to the $Z(\nu\bar\nu)+$jet background by means of precise theoretical predictions. In this context, recent advances in perturbative calculations open the door to significant sensitivity improvements in dark matter searches. In this spirit, we present a combination of state-of-the art calculations for all relevant $V+$jets processes, including throughout NNLO QCD corrections and NLO electroweak corrections supplemented by Sudakov logarithms at two loops. Predictions at parton level are provided together with detailed recommendations for their usage in experimental analyses based on the reweighting of Monte Carlo samples. Particular attention is devoted to the estimate of theoretical uncertainties in the framework of dark matter searches, where subtle aspects such as correlations across different $V+$jet processes play a key role. In conclusion, the anticipated theoretical uncertainty in the $Z(\nu\bar\nu)+$jet background is at the few percent level up to the TeV range.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

A microfluidic platform for precision small-volume sample processing and its use to size separate biological particles with an acoustic microdevice [Precision size separation of biological particles in small-volume samples by an acoustic microfluidic system]

Here, a major advantage of microfluidic devices is the ability to manipulate small sample volumes, thus reducing reagent waste and preserving precious sample. However, to achieve robust sample manipulation it is necessary to address device integration with the macroscale environment. To realize repeatable, sensitive particle separation with microfluidic devices, this protocol presents a complete automated and integrated microfluidic platform that enables precise processing of 0.15–1.5 ml samples using microfluidic devices. Important aspects of this system include modular device layout and robust fixtures resulting in reliable and flexible world to chip connections, and fully-automated fluid handling which accomplishes closed-loop sample collection, system cleaning and priming steps to ensure repeatable operation. Different microfluidic devices can be used interchangeably with this architecture. Here we incorporate an acoustofluidic device, detail its characterization, performance optimization, and demonstrate its use for size-separation of biological samples. By using real-time feedback during separation experiments, sample collection is optimized to conserve and concentrate sample. Although requiring the integration of multiple pieces of equipment, advantages of this architecture include the ability to process unknown samples with no additional system optimization, ease of device replacement, and precise, robust sample processing.

42 ENGINEERING↗
DOE OSTI2019

Rethinking surface reactions in nanoscale dry processes toward atomic precision and beyond: a physics and chemistry perspective

In this review, we discuss the progress of emerging dry processes with atomic precision. Researchers in the field of plasma processing and surface science have addressed the increasingly challenging demands of material selectivity by utilization of synergistic enhancement of etching or deposition. The discussion encompasses major challenges in the plasma science and technology community. Here, the focus of the review is advances in atomic layer etching and area-selective deposition with activation or deactivation, especially in terms of materials scaling and variety. Control of high-aspect-ratio feature fabrication in semiconductor manufacturing and etched shapes of interior features at the nanoscale are needed. Issues related to profile distortion have received much attention. State-of-the-art techniques used in semiconductor manufacturing are reviewed and future challenges are outlined.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗